STBV68 [STMICROELECTRONICS]

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR; 高压快速开关NPN功率晶体管
STBV68
型号: STBV68
厂家: ST    ST
描述:

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
高压快速开关NPN功率晶体管

晶体 开关 小信号双极晶体管 高压
文件: 总4页 (文件大小:44K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
STBV68  
®
HIGH VOLTAGE FAST-SWITCHING  
NPN POWER TRANSISTOR  
MEDIUM VOLTAGE CAPABILITY  
LOW SPREAD OF DYNAMIC PARAMETERS  
MINIMUM LOT-TO-LOT SPREAD FOR  
RELIABLE OPERATION  
VERY HIGH SWITCHING SPEED  
APPLICATIONS:  
ELECTRONIC BALLASTS FOR  
FLUORESCENT LIGHTING  
DESCRIPTION  
The device is manufactured using high voltage  
Multi Epitaxial Planar technology for high  
switching speeds and medium voltage capability.  
TO-92  
It uses a Cellular Emitter structure with planar  
edge termination to enhance switching speeds  
while maintaining the wide RBSOA.  
The STBV68 is designed for use in compact  
fluorescent lamp application.  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCES  
VCEO  
VEBO  
IC  
Parameter  
Collector-Emitter Voltage (VBE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
Value  
600  
Unit  
V
V
400  
9
V
0.6  
A
ICM  
Collector Peak Current (tp < 5 ms)  
Base Current  
1.2  
A
IB  
0.3  
A
IBM  
Base Peak Current (tp < 5 ms)  
0.6  
A
o
Ptot  
Total Dissipation at Tamb = 25 C  
0.9  
W
oC  
oC  
Tstg  
Tj  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
1/4  
September 2000  
STBV68  
THERMAL DATA  
Rthj-amb Thermal Resistance Junction-ambient  
Max  
140  
oC/W  
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)  
Symbol  
Parameter  
Test Conditions  
VCE = 600 V  
Min.  
Typ.  
Max.  
Unit  
ICEV  
Collector Cut-off  
250  
µA  
Current (VBE = -1.5 V)  
IEBO  
Emitter Cut-off Current VBE = 9 V  
(IC = 0)  
1
mA  
V
VCEO(sus) Collector-Emitter  
Sustaining Voltage  
(IB = 0)  
IC = 1 mA  
L = 25mH  
400  
VCE(sat)  
Collector-Emitter  
Saturation Voltage  
IC = 0.1 A  
IC = 0.15 A  
IC = 0.25 A  
IB = 20 mA  
IB = 50 mA  
IB = 100 mA  
0.35  
0.8  
3.0  
0.75  
1.5  
5
V
V
V
VBE(sat)  
hFE  
Base-Emitter  
Saturation Voltage  
IC = 0.1 A  
IC = 0.15 A  
IB = 20 mA  
IB = 50 mA  
1.0  
1.2  
V
V
DC Current Gain  
IC = 0.1 A  
IC = 0.25 A  
VCE = 5 V  
VCE = 10 V  
7
3
15  
6
INDUCTIVE LOAD  
Fall Time  
IC = 0.1 A  
IB1 = - IB2 = 20 mA  
Vclamp = 300 V  
L =3 mH  
tf  
0.3  
µs  
Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %  
2/4  
STBV68  
TO-92 MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
4.58  
4.45  
3.2  
TYP.  
MAX.  
5.33  
5.2  
MIN.  
0.180  
0.175  
0.126  
0.500  
MAX.  
0.210  
0.204  
0.165  
A
B
C
D
E
F
4.2  
12.7  
1.27  
0.050  
0.4  
0.51  
0.016  
0.14  
0.020  
G
0.35  
3/4  
STBV68  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is  
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are  
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products  
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
The ST logo is a trademark of STMicroelectronics  
© 2000 STMicroelectronics – Printed in Italy – All Rights Reserved  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco -  
Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.  
http://www.st.com  
4/4  

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