STD2NK100Z [STMICROELECTRONICS]

N-channel 1000 V, 6.25 Ω, 1.85 A, TO-220, DPAK, IPAK Zener-protected SuperMESH? Power MOSFET; N沟道1000 V, 6.25 Ω , 1.85 A, TO- 220 , DPAK , IPAK齐纳保护超网™功率MOSFET
STD2NK100Z
型号: STD2NK100Z
厂家: ST    ST
描述:

N-channel 1000 V, 6.25 Ω, 1.85 A, TO-220, DPAK, IPAK Zener-protected SuperMESH? Power MOSFET
N沟道1000 V, 6.25 Ω , 1.85 A, TO- 220 , DPAK , IPAK齐纳保护超网™功率MOSFET

晶体 晶体管 功率场效应晶体管 开关 脉冲
文件: 总16页 (文件大小:456K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
STD2NK100Z  
STP2NK100Z - STU2NK100Z  
N-channel 1000 V, 6.25 , 1.85 A, TO-220, DPAK, IPAK  
Zener-protected SuperMESH™ Power MOSFET  
Features  
RDS(on)  
max  
VDSS  
ID  
PTOT  
Type  
3
STD2NK100Z 1000 V < 8.5 1.85 A 70 W  
STP2NK100Z 1000 V < 8.5 1.85 A 70 W  
STU2NK100Z 1000 V < 8.5 1.85 A 70 W  
2
3
1
2
1
IPAK  
TO-220  
Extremely high dv/dt capability  
100% avalanche tested  
3
1
Gate charge minimized  
DPAK  
Very low intrinsic capacitances  
Very good manufacturing repeatability  
Figure 1.  
Internal schematic diagram  
Application  
Switching applications  
Description  
The SuperMESH™ series is obtained through an  
extreme optimization of ST’s well established  
strip-based PowerMESH™ layout. In addition to  
pushing on-resistance significantly down,  
specialties is taken to ensure a very good dv/dt  
capability for the most demanding application.  
Such series complements ST full range of high  
voltage Power MOSFETs.  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
DPAK  
Packaging  
STD2NK100Z  
STP2NK100Z  
STU2NK100Z  
2NK100Z  
2NK100Z  
2NK100Z  
Tape and reel  
Tube  
TO-220  
IPAK  
Tube  
June 2008  
Rev 2  
1/16  
www.st.com  
16  
Contents  
STD2NK100Z - STP2NK100Z - STU2NK100Z  
Contents  
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
2.1  
Electrical characteristics (curves)  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
3
4
5
6
Test circuits  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
2/16  
STD2NK100Z - STP2NK100Z - STU2NK100Z  
Electrical ratings  
1
Electrical ratings  
Table 2.  
Symbol  
Absolute maximum ratings  
Parameter  
Value  
Unit  
V
VDS  
VGS  
ID  
Drain-source voltage (VGS = 0)  
1000  
30  
Gate-source voltage  
V
Drain current (continuous) at TC = 25 °C  
Drain current (continuous) at TC = 100 °C  
1.85  
1.16  
7.4  
A
ID  
A
(1)  
Drain current (pulsed)  
A
IDM  
PTOT  
Total dissipation at TC = 25 °C  
Derating factor  
70  
0.56  
3000  
2.5  
W
W/°C  
V
VESD(G-S)  
dv/dt (2)  
G-S ESD (HBM C=100 pF, R=1.5 k)  
Peak diode recovery voltage slope  
V/ns  
Tj  
Operating junction temperature  
Storage temperature  
-55 to 150  
°C  
Tstg  
1. Pulse width limited by safe operating area  
2. ISD 1.85 A, di/dt 200 A/µs, VDD = 80% V(BR)DSS  
Table 3.  
Symbol  
Thermal data  
Value  
Parameter  
Unit  
TO-220  
IPAK DPAK  
Rthj-case  
Rthj-pcb  
Rthj-amb  
Tl  
Thermal resistance junction-case max  
1.79  
--  
°C/W  
°C/W  
°C/W  
°C  
Thermal resistance junction-pcb minimum footprint  
Thermal resistance junction-amb max  
--  
50  
62.5  
100  
Maximum lead temperature for soldering purpose  
300  
Table 4.  
Symbol  
Avalanche data  
Parameter  
Value  
1.85  
170  
Unit  
A
(1)  
Avalanche current, repetitive or not-repetitive  
Single pulse avalanche energy  
IAR  
(2)  
mJ  
EAS  
1. Pulse width limited by Tjmax  
2. Starting Tj = 25°C, ID = IAR, VDD = 50V  
3/16  
Electrical characteristics  
STD2NK100Z - STP2NK100Z - STU2NK100Z  
2
Electrical characteristics  
(T  
=25°C unless otherwise specified)  
CASE  
Table 5.  
Symbol  
On/off states  
Parameter  
Test conditions  
ID = 1 mA, VGS= 0  
Min.  
Typ.  
Max. Unit  
Drain-source breakdown  
voltage  
V(BR)DSS  
1000  
V
V
DS = Max rating,  
DS = Max rating,Tc=125 °C  
1
µA  
µA  
Zero gate voltage drain  
current (VGS = 0)  
IDSS  
V
50  
Gate body leakage current  
(VDS = 0)  
IGSS  
VGS  
=
30 V  
±10  
µA  
VGS(th)  
RDS(on)  
VDS= VGS, ID = 50 µA  
VGS= 10 V, ID= 0.9 A  
Gate threshold voltage  
3
3.75  
6.25  
4.5  
8.5  
V
Static drain-source on  
resistance  
Table 6.  
Symbol  
Dynamic  
Parameter  
Test conditions  
Min.  
Typ.  
Max. Unit  
(1)  
VDS =15 V, ID = 0.9 A  
Forward transconductance  
2.4  
S
gfs  
Input capacitance  
Ciss  
Coss  
Crss  
499  
53  
9
pF  
pF  
pF  
Output capacitance  
VDS =25 V, f=1 MHz, VGS=0  
Reverse transfer  
capacitance  
Equivalent output  
capacitance  
(2)  
VGS =0, VDS =0 to 800 V  
f=1 MHz, open drain  
28  
pF  
Coss eq.  
RG  
Gate input resistance  
6.6  
Qg  
Qgs  
Qgd  
VDD=800 V, ID = 1.85 A  
VGS =10 V  
Total gate charge  
Gate-source charge  
Gate-drain charge  
16  
3
nC  
nC  
nC  
9
(see Figure 17)  
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%  
2. Coss eq. is defined as constant equivalent capacitance giving the same charging time as Coss when VDS  
increases from 0 to 80% VDSS  
4/16  
STD2NK100Z - STP2NK100Z - STU2NK100Z  
Electrical characteristics  
Min. Typ. Max. Unit  
Table 7.  
Symbol  
Switching times  
Parameter  
Test conditions  
td(on)  
tr  
td(off)  
tr  
Turn-on delay time  
Rise time  
7.2  
6.5  
ns  
ns  
VDD= 500 V, ID= 0.9 A,  
RG=4.7 , VGS=10 V  
(see Figure 16)  
Turn-off delay time  
Fall time  
41.5  
32.5  
ns  
ns  
Table 8.  
Symbol  
Source drain diode  
Parameter  
Test conditions  
Min. Typ. Max. Unit  
Source-drain current  
ISD  
1.85  
7.4  
A
A
Source-drain current  
(pulsed)  
(1)  
ISDM  
(2)  
ISD= 1.85 A, VGS=0  
Forward on voltage  
1.6  
V
VSD  
trr  
ISD= 1.85 A, di/dt= 100 A/µs,  
VDD= 60 V  
Reverse recovery time  
Reverse recovery charge  
Reverse recovery current  
476  
1.6  
6.9  
ns  
µC  
A
Qrr  
(see Figure 21)  
IRRM  
trr  
ISD= 1.85 A, di/dt= 100 A/µs,  
VDD= 60 V, Tj=150 °C  
Reverse recovery time  
Reverse recovery charge  
Reverse recovery current  
532  
1.9  
88  
ns  
µC  
A
Qrr  
(see Figure 21)  
IRRM  
1. Pulse width limited by package  
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%  
Table 9.  
Symbol  
Gate-source zener diode  
Parameter  
Test conditions  
IGS = 1mA (open drain)  
Min. Typ. Max. Unit  
BVGSO  
(1)  
Gate-source breakdown  
voltage  
30  
V
1. The built in back-to-back zener diodes have specifically been designed to enhance not only the device’s  
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be  
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and  
cost-effective intervention to protect the device’s integrity. These integrated zener diodes thus avoid the  
usage of external components.  
5/16  
Electrical characteristics  
STD2NK100Z - STP2NK100Z - STU2NK100Z  
Figure 3. Thermal impedance for TO-220  
2.1  
Electrical characteristics (curves)  
Figure 2. Safe operating area for TO-220  
Figure 4. Safe operating area for DPAK, IPAK Figure 5. Thermal impedance for DPAK, IPAK  
Figure 6. Output characteristics  
Figure 7. Transfer characteristics  
6/16  
STD2NK100Z - STP2NK100Z - STU2NK100Z  
Electrical characteristics  
Figure 8. Normalized B  
vs temperature  
Figure 9. Static drain-source on resistance  
VDSS  
Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations  
Figure 12. Normalized gate threshold voltage Figure 13. Normalized on resistance vs  
vs temperature temperature  
7/16  
Electrical characteristics  
STD2NK100Z - STP2NK100Z - STU2NK100Z  
Figure 14. Source-drain diode forward  
characteristics  
Figure 15. Maximum avalanche energy vs  
temperature  
AM00056v1  
E
AS(mJ)  
190  
180  
170  
160  
150  
140  
130  
120  
110  
100  
90  
ID=1.85A  
80  
70  
60  
50  
40  
30  
20  
10  
0
10 20 30 40 50 60 70 80 90 100 110 120 130 140 TJ(°C)  
8/16  
STD2NK100Z - STP2NK100Z - STU2NK100Z  
Test circuits  
3
Test circuits  
Figure 16. Switching times test circuit for  
resistive load  
Figure 17. Gate charge test circuit  
Figure 18. Test circuit for inductive load  
switching and diode recovery times  
Figure 19. Unclamped inductive load test  
circuit  
Figure 20. Unclamped inductive waveform  
Figure 21. Switching time waveform  
9/16  
Package mechanical data  
STD2NK100Z - STP2NK100Z - STU2NK100Z  
4
Package mechanical data  
In order to meet environmental requirements, ST offers these devices in ECOPACK®  
packages. These packages have a Lead-free second level interconnect. The category of  
second level interconnect is marked on the package and on the inner box label, in  
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering  
conditions are also marked on the inner box label. ECOPACK is an ST trademark.  
ECOPACK specifications are available at: www.st.com  
10/16  
STD2NK100Z - STP2NK100Z - STU2NK100Z  
Package mechanical data  
TO-220 mechanical data  
mm  
Typ  
inch  
Dim  
Min  
Max  
Min  
Typ  
Max  
A
b
4.40  
0.61  
1.14  
0.48  
15.25  
4.60  
0.88  
1.70  
0.70  
15.75  
0.173  
0.024  
0.044  
0.019  
0.6  
0.181  
0.034  
0.066  
0.027  
0.62  
b1  
c
D
D1  
E
1.27  
0.050  
10  
10.40  
2.70  
5.15  
1.32  
6.60  
2.72  
14  
0.393  
0.094  
0.194  
0.048  
0.244  
0.094  
0.511  
0.137  
0.409  
0.106  
0.202  
0.051  
0.256  
0.107  
0.551  
0.154  
e
2.40  
4.95  
1.23  
6.20  
2.40  
13  
e1  
F
H1  
J1  
L
L1  
L20  
L30  
P  
Q
3.50  
3.93  
16.40  
0.645  
28.90  
1.137  
3.75  
3.85  
2.95  
0.147  
0.104  
0.151  
0.116  
2.65  
11/16  
Package mechanical data  
STD2NK100Z - STP2NK100Z - STU2NK100Z  
TO-251 (IPAK) mechanical data  
mm.  
typ  
DIM.  
min.  
2.20  
0.90  
0.64  
max.  
2.40  
1.10  
0.90  
0.95  
5.40  
0.60  
0.60  
6.20  
6.60  
A
A1  
b
b2  
b4  
c
5.20  
0.45  
0.48  
6.00  
6.40  
c2  
D
E
e
2.28  
e1  
H
4.40  
4.60  
16.10  
L
9.00  
0.80  
9.40  
(L1)  
L2  
V1  
1.20  
0.80  
10 o  
0068771_H  
12/16  
STD2NK100Z - STP2NK100Z - STU2NK100Z  
Package mechanical data  
TO-252 (DPAK) mechanical data  
mm.  
typ  
DIM.  
min.  
2.20  
0.90  
0.03  
0.64  
5.20  
0.45  
0.48  
6.00  
max.  
2.40  
1.10  
0.23  
0.90  
5.40  
0.60  
0.60  
6.20  
A
A1  
A2  
b
b4  
c
c2  
D
D1  
E
5.10  
6.40  
6.60  
E1  
e
4.70  
2.28  
e1  
H
4.40  
9.35  
1
4.60  
10.10  
L
L1  
L2  
L4  
R
2.80  
0.80  
0.60  
0 o  
1
0.20  
8 o  
V2  
0068772_G  
13/16  
Packaging mechanical data  
STD2NK100Z - STP2NK100Z - STU2NK100Z  
5
Packaging mechanical data  
DPAK FOOTPRINT  
All dimensions are in millimeters  
TAPE AND REEL SHIPMENT  
REEL MECHANICAL DATA  
mm  
MIN. MAX. MIN. MAX.  
330 12.992  
inch  
DIM.  
A
B
C
D
G
N
T
1.5  
12.8  
20.2  
16.4  
50  
0.059  
13.2 0.504 0.520  
0.795  
18.4 0.645 0.724  
1.968  
22.4  
0.881  
BASE QTY  
BULK QTY  
2500  
TAPE MECHANICAL DATA  
2500  
mm  
MIN. MAX. MIN. MAX.  
6.8 0.267 0.275  
10.4 10.6 0.409 0.417  
12.1 0.476  
inch  
DIM.  
A0  
B0  
B1  
D
7
1.5  
1.5  
1.6 0.059 0.063  
0.059  
D1  
E
1.65 1.85 0.065 0.073  
7.4 7.6 0.291 0.299  
2.55 2.75 0.100 0.108  
F
K0  
P0  
P1  
P2  
R
3.9  
7.9  
1.9  
40  
4.1 0.153 0.161  
8.1 0.311 0.319  
2.1 0.075 0.082  
1.574  
W
15.7  
16.3 0.618 0.641  
14/16  
STD2NK100Z - STP2NK100Z - STU2NK100Z  
Revision history  
6
Revision history  
Table 10. Document revision history  
Date  
Revision  
Changes  
24-Oct-2007  
1
First release  
– Inserted new package, mechanical data IPAK  
18-Jun-2008  
2
– Document status promoted from preliminary data to  
datasheet.  
15/16  
STD2NK100Z - STP2NK100Z - STU2NK100Z  
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16/16  

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