STD2NK100Z [STMICROELECTRONICS]
N-channel 1000 V, 6.25 Ω, 1.85 A, TO-220, DPAK, IPAK Zener-protected SuperMESH? Power MOSFET; N沟道1000 V, 6.25 Ω , 1.85 A, TO- 220 , DPAK , IPAK齐纳保护超网™功率MOSFET型号: | STD2NK100Z |
厂家: | ST |
描述: | N-channel 1000 V, 6.25 Ω, 1.85 A, TO-220, DPAK, IPAK Zener-protected SuperMESH? Power MOSFET |
文件: | 总16页 (文件大小:456K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
STD2NK100Z
STP2NK100Z - STU2NK100Z
N-channel 1000 V, 6.25 Ω, 1.85 A, TO-220, DPAK, IPAK
Zener-protected SuperMESH™ Power MOSFET
Features
RDS(on)
max
VDSS
ID
PTOT
Type
3
STD2NK100Z 1000 V < 8.5 Ω 1.85 A 70 W
STP2NK100Z 1000 V < 8.5 Ω 1.85 A 70 W
STU2NK100Z 1000 V < 8.5 Ω 1.85 A 70 W
2
3
1
2
1
IPAK
TO-220
■ Extremely high dv/dt capability
■ 100% avalanche tested
3
1
■ Gate charge minimized
DPAK
■ Very low intrinsic capacitances
■ Very good manufacturing repeatability
Figure 1.
Internal schematic diagram
Application
■ Switching applications
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down,
specialties is taken to ensure a very good dv/dt
capability for the most demanding application.
Such series complements ST full range of high
voltage Power MOSFETs.
Table 1.
Device summary
Order codes
Marking
Package
DPAK
Packaging
STD2NK100Z
STP2NK100Z
STU2NK100Z
2NK100Z
2NK100Z
2NK100Z
Tape and reel
Tube
TO-220
IPAK
Tube
June 2008
Rev 2
1/16
www.st.com
16
Contents
STD2NK100Z - STP2NK100Z - STU2NK100Z
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
6
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16
STD2NK100Z - STP2NK100Z - STU2NK100Z
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
V
VDS
VGS
ID
Drain-source voltage (VGS = 0)
1000
30
Gate-source voltage
V
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
1.85
1.16
7.4
A
ID
A
(1)
Drain current (pulsed)
A
IDM
PTOT
Total dissipation at TC = 25 °C
Derating factor
70
0.56
3000
2.5
W
W/°C
V
VESD(G-S)
dv/dt (2)
G-S ESD (HBM C=100 pF, R=1.5 kΩ)
Peak diode recovery voltage slope
V/ns
Tj
Operating junction temperature
Storage temperature
-55 to 150
°C
Tstg
1. Pulse width limited by safe operating area
2. ISD ≤ 1.85 A, di/dt ≤ 200 A/µs, VDD = 80% V(BR)DSS
Table 3.
Symbol
Thermal data
Value
Parameter
Unit
TO-220
IPAK DPAK
Rthj-case
Rthj-pcb
Rthj-amb
Tl
Thermal resistance junction-case max
1.79
--
°C/W
°C/W
°C/W
°C
Thermal resistance junction-pcb minimum footprint
Thermal resistance junction-amb max
--
50
62.5
100
Maximum lead temperature for soldering purpose
300
Table 4.
Symbol
Avalanche data
Parameter
Value
1.85
170
Unit
A
(1)
Avalanche current, repetitive or not-repetitive
Single pulse avalanche energy
IAR
(2)
mJ
EAS
1. Pulse width limited by Tjmax
2. Starting Tj = 25°C, ID = IAR, VDD = 50V
3/16
Electrical characteristics
STD2NK100Z - STP2NK100Z - STU2NK100Z
2
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 5.
Symbol
On/off states
Parameter
Test conditions
ID = 1 mA, VGS= 0
Min.
Typ.
Max. Unit
Drain-source breakdown
voltage
V(BR)DSS
1000
V
V
DS = Max rating,
DS = Max rating,Tc=125 °C
1
µA
µA
Zero gate voltage drain
current (VGS = 0)
IDSS
V
50
Gate body leakage current
(VDS = 0)
IGSS
VGS
=
30 V
±10
µA
VGS(th)
RDS(on)
VDS= VGS, ID = 50 µA
VGS= 10 V, ID= 0.9 A
Gate threshold voltage
3
3.75
6.25
4.5
8.5
V
Static drain-source on
resistance
Ω
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Min.
Typ.
Max. Unit
(1)
VDS =15 V, ID = 0.9 A
Forward transconductance
2.4
S
gfs
Input capacitance
Ciss
Coss
Crss
499
53
9
pF
pF
pF
Output capacitance
VDS =25 V, f=1 MHz, VGS=0
Reverse transfer
capacitance
Equivalent output
capacitance
(2)
VGS =0, VDS =0 to 800 V
f=1 MHz, open drain
28
pF
Coss eq.
RG
Gate input resistance
6.6
Ω
Qg
Qgs
Qgd
VDD=800 V, ID = 1.85 A
VGS =10 V
Total gate charge
Gate-source charge
Gate-drain charge
16
3
nC
nC
nC
9
(see Figure 17)
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
2. Coss eq. is defined as constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/16
STD2NK100Z - STP2NK100Z - STU2NK100Z
Electrical characteristics
Min. Typ. Max. Unit
Table 7.
Symbol
Switching times
Parameter
Test conditions
td(on)
tr
td(off)
tr
Turn-on delay time
Rise time
7.2
6.5
ns
ns
VDD= 500 V, ID= 0.9 A,
RG=4.7 Ω, VGS=10 V
(see Figure 16)
Turn-off delay time
Fall time
41.5
32.5
ns
ns
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
Source-drain current
ISD
1.85
7.4
A
A
Source-drain current
(pulsed)
(1)
ISDM
(2)
ISD= 1.85 A, VGS=0
Forward on voltage
1.6
V
VSD
trr
ISD= 1.85 A, di/dt= 100 A/µs,
VDD= 60 V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
476
1.6
6.9
ns
µC
A
Qrr
(see Figure 21)
IRRM
trr
ISD= 1.85 A, di/dt= 100 A/µs,
VDD= 60 V, Tj=150 °C
Reverse recovery time
Reverse recovery charge
Reverse recovery current
532
1.9
88
ns
µC
A
Qrr
(see Figure 21)
IRRM
1. Pulse width limited by package
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Table 9.
Symbol
Gate-source zener diode
Parameter
Test conditions
IGS = 1mA (open drain)
Min. Typ. Max. Unit
BVGSO
(1)
Gate-source breakdown
voltage
30
V
1. The built in back-to-back zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated zener diodes thus avoid the
usage of external components.
5/16
Electrical characteristics
STD2NK100Z - STP2NK100Z - STU2NK100Z
Figure 3. Thermal impedance for TO-220
2.1
Electrical characteristics (curves)
Figure 2. Safe operating area for TO-220
Figure 4. Safe operating area for DPAK, IPAK Figure 5. Thermal impedance for DPAK, IPAK
Figure 6. Output characteristics
Figure 7. Transfer characteristics
6/16
STD2NK100Z - STP2NK100Z - STU2NK100Z
Electrical characteristics
Figure 8. Normalized B
vs temperature
Figure 9. Static drain-source on resistance
VDSS
Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations
Figure 12. Normalized gate threshold voltage Figure 13. Normalized on resistance vs
vs temperature temperature
7/16
Electrical characteristics
STD2NK100Z - STP2NK100Z - STU2NK100Z
Figure 14. Source-drain diode forward
characteristics
Figure 15. Maximum avalanche energy vs
temperature
AM00056v1
E
AS(mJ)
190
180
170
160
150
140
130
120
110
100
90
ID=1.85A
80
70
60
50
40
30
20
10
0
10 20 30 40 50 60 70 80 90 100 110 120 130 140 TJ(°C)
8/16
STD2NK100Z - STP2NK100Z - STU2NK100Z
Test circuits
3
Test circuits
Figure 16. Switching times test circuit for
resistive load
Figure 17. Gate charge test circuit
Figure 18. Test circuit for inductive load
switching and diode recovery times
Figure 19. Unclamped inductive load test
circuit
Figure 20. Unclamped inductive waveform
Figure 21. Switching time waveform
9/16
Package mechanical data
STD2NK100Z - STP2NK100Z - STU2NK100Z
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
10/16
STD2NK100Z - STP2NK100Z - STU2NK100Z
Package mechanical data
TO-220 mechanical data
mm
Typ
inch
Dim
Min
Max
Min
Typ
Max
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
0.173
0.024
0.044
0.019
0.6
0.181
0.034
0.066
0.027
0.62
b1
c
D
D1
E
1.27
0.050
10
10.40
2.70
5.15
1.32
6.60
2.72
14
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
3.50
3.93
16.40
0.645
28.90
1.137
3.75
3.85
2.95
0.147
0.104
0.151
0.116
2.65
11/16
Package mechanical data
STD2NK100Z - STP2NK100Z - STU2NK100Z
TO-251 (IPAK) mechanical data
mm.
typ
DIM.
min.
2.20
0.90
0.64
max.
2.40
1.10
0.90
0.95
5.40
0.60
0.60
6.20
6.60
A
A1
b
b2
b4
c
5.20
0.45
0.48
6.00
6.40
c2
D
E
e
2.28
e1
H
4.40
4.60
16.10
L
9.00
0.80
9.40
(L1)
L2
V1
1.20
0.80
10 o
0068771_H
12/16
STD2NK100Z - STP2NK100Z - STU2NK100Z
Package mechanical data
TO-252 (DPAK) mechanical data
mm.
typ
DIM.
min.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
max.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
A
A1
A2
b
b4
c
c2
D
D1
E
5.10
6.40
6.60
E1
e
4.70
2.28
e1
H
4.40
9.35
1
4.60
10.10
L
L1
L2
L4
R
2.80
0.80
0.60
0 o
1
0.20
8 o
V2
0068772_G
13/16
Packaging mechanical data
STD2NK100Z - STP2NK100Z - STU2NK100Z
5
Packaging mechanical data
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
16.4
50
0.059
13.2 0.504 0.520
0.795
18.4 0.645 0.724
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
TAPE MECHANICAL DATA
2500
mm
MIN. MAX. MIN. MAX.
6.8 0.267 0.275
10.4 10.6 0.409 0.417
12.1 0.476
inch
DIM.
A0
B0
B1
D
7
1.5
1.5
1.6 0.059 0.063
0.059
D1
E
1.65 1.85 0.065 0.073
7.4 7.6 0.291 0.299
2.55 2.75 0.100 0.108
F
K0
P0
P1
P2
R
3.9
7.9
1.9
40
4.1 0.153 0.161
8.1 0.311 0.319
2.1 0.075 0.082
1.574
W
15.7
16.3 0.618 0.641
14/16
STD2NK100Z - STP2NK100Z - STU2NK100Z
Revision history
6
Revision history
Table 10. Document revision history
Date
Revision
Changes
24-Oct-2007
1
First release
– Inserted new package, mechanical data IPAK
18-Jun-2008
2
– Document status promoted from preliminary data to
datasheet.
15/16
STD2NK100Z - STP2NK100Z - STU2NK100Z
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2008 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
16/16
相关型号:
STD2NK70Z-1
N-CHANNEL 700 V - 6 W - 1.6 A DPAK/IPAK Zener-Protected SuperMESHTM MOSFET
STMICROELECTR
STD2NK70ZT4
N-CHANNEL 700 V - 6 W - 1.6 A DPAK/IPAK Zener-Protected SuperMESHTM MOSFET
STMICROELECTR
STD2NK70Z_06
N-channel 700V - 6Ω - 1.6 A - DPAK/IPAK Zener protected SuperMESH™ Power MOSFET
STMICROELECTR
STD2NK90Z-1
N-CHANNEL 900V-5W-2.1A TO-220/DPAK/IPAK Zener-Protected SuperMESHTM MOSFET
STMICROELECTR
STD2NK90ZT4
N-CHANNEL 900V-5W-2.1A TO-220/DPAK/IPAK Zener-Protected SuperMESHTM MOSFET
STMICROELECTR
STD2NK90Z_06
N-channel 900V - 5Ω - 2.1A - TO-220 /DPAK/IPAK Zener-Protected SuperMESH™ MOSFET
STMICROELECTR
©2020 ICPDF网 联系我们和版权申明