STD90N4F3 [STMICROELECTRONICS]
N-channel 40V - 5.4mヘ - 80A - DPAK - TO-220 - IPAK STripFET⑩ Power MOSFET; N沟道40V - 5.4米ヘ - 80A - DPAK - TO- 220 - IPAK STripFET⑩功率MOSFET型号: | STD90N4F3 |
厂家: | ST |
描述: | N-channel 40V - 5.4mヘ - 80A - DPAK - TO-220 - IPAK STripFET⑩ Power MOSFET |
文件: | 总14页 (文件大小:343K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
STD90N4F3
STP90N4F3 - STU90N4F3
N-channel 40V - 5.4mΩ - 80A - DPAK - TO-220 - IPAK
STripFET™ Power MOSFET
Features
Type
VDSS
RDS(on)
ID
Pw
STD90N4F3
STP90N4F3
STU90N4F3
40V
40V
40V
<6.5mΩ
<6.5mΩ
<6.5mΩ
80A 110W
80A 110W
80A 110W
3
3
3
2
2
1
1
1
■ Standard threshold drive
■ 100% avalanche tested
TO-220
IPAK
DPAK
Applications
■ Switching application
Description
Figure 1.
Internal schematic diagram
This n-channel enhancement mode Power
MOSFET is the latest refinement of
STMicroelectronics unique “single feature size“
strip-based process with less critical alignment
steps and therefore a remarkable manufacturing
reproducibility. The resulting transistor shows
extremely high packing density for low on-
resistance, rugged avalanche characteristics and
low gate charge.
Table 1.
Device summary
Order code
Marking
90N4F3
90N4F3
90N4F3
Package
DPAK
Packaging
Tape & reel
Tube
STD90N4F3
STP90N4F3
STU90N4F3
TO-220
IPAK
Tube
November 2007
Rev1
1/14
www.st.com
14
Contents
STD90N4F3 - STP90N4F3 - STU90N4F3
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
6
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14
STD90N4F3 - STP90N4F3 - STU90N4F3
Electrical ratings
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Drain-source voltage (VGS=0)
Gate-source voltage
Value
Unit
V
VDS
VGS
40
20
V
(1)
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
80
65
A
ID
ID
A
(2)
Drain current (pulsed)
320
A
IDM
PTOT
Total dissipation at TC = 25°C
Derating factor
110
0.73
8
W
W/°C
V/ns
dv/dt (3)
Peak diode recovery voltage slope
(4)
Single pulse avalanche energy
400
mJ
°C
EAS
Tj
Operating junction temperature
Storage temperature
-55 to 175
Tstg
1. Current limited by package
2. Pulse width limited by safe operating area
3. ISD < 80 A, di/dt < 400A/µs, VDS < V(BR)DSS, Tj < Tjmax
4. Starting Tj = 25°C, ID = 40A, VDD = 30V
Table 3.
Thermal resistance
Parameter
Value
Symbol
Unit
TO-220 IPAK
DPAK
Rthj-case Thermal resistance junction-case max
1.36
°C/W
°C/W
°C/W
Rthj-a
Thermal resistance junction-ambient max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering purpose
62.5
--
100
--
--
50
--
Rthj-pcb (1)
Tl
300
275
°C
1. When mounted on 1inch² FR-4 2Oz Cu board
3/14
Electrical characteristics
STD90N4F3 - STP90N4F3 - STU90N4F3
2
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 4.
Static
Symbol
Parameter
Test conditions
ID = 250 µA, VGS= 0
Min. Typ. Max. Unit
Drain-source breakdown
voltage
V(BR)DSS
40
V
V
DS = Max rating,
10
µA
µA
Zero gate voltage drain
current (VGS = 0)
IDSS
VDS = Max rating,Tc = 125°C
100
Gate body leakage current
(VDS = 0)
IGSS
VGS = 20 V
±200 nA
VGS(th)
RDS(on)
VDS= VGS, ID = 250 µA
VGS= 10 V, ID= 40 A
Gate threshold voltage
2
4
V
Static drain-source on
resistance
5.4
6.5
mΩ
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min Typ. Max. Unit
(1)
VDS =25 V, ID=40 A
Forward transconductance
100
S
gfs
Ciss
Coss
Crss
Input capacitance
2200
580
40
pF
pF
pF
VDS =25 V, f=1 MHz, VGS=0
VDD=20 V, ID = 80 A
Output capacitance
Reverse transfer capacitance
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
40
11
8
54
nC
nC
nC
VGS =10 V
(see Figure 14)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
4/14
STD90N4F3 - STP90N4F3 - STU90N4F3
Electrical characteristics
Table 6.
Switching on/off (inductive load)
Symbol
Parameter
Test conditions
Min. Typ.
Max. Unit
VDD=20 V, ID= 40 A,
RG=4.7 Ω, VGS=10 V
(see Figure 16)
td(on)
tr
Turn-on delay time
15
50
ns
ns
Rise time
V
DD=20 V, ID= 40 A,
td(off)
tf
Turn-off delay time
Fall time
40
15
ns
ns
RG=4.7 Ω, VGS=10 V
(see Figure 16)
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
Source-drain current
80
A
A
(1)
Source-drain current (pulsed)
320
ISDM
(2)
I
SD=80 A, VGS=0
Forward on voltage
1.5
V
VSD
ISD=80 A,
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
45
60
ns
nC
A
di/dt = 100 A/µs,
Qrr
VDD=30 V, Tj=150°C
2.8
IRRM
(see Figure 15)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
5/14
Electrical characteristics
STD90N4F3 - STP90N4F3 - STU90N4F3
Thermal impedance
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Figure 5.
Figure 7.
Figure 4.
Figure 6.
6/14
Output characteristics
Transfer characteristics
Static drain-source on resistance
Normalized BVDSS vs temperature
STD90N4F3 - STP90N4F3 - STU90N4F3
Electrical characteristics
Figure 8.
Gate charge vs gate-source voltage Figure 9.
Capacitance variations
Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs
vs temperature
temperature
Figure 12. Source-drain diode forward
characteristics
7/14
Test circuit
STD90N4F3 - STP90N4F3 - STU90N4F3
3
Test circuit
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
Figure 15. Test circuit for inductive load
switching and diode recovery times
Figure 16. Unclamped Inductive load test
circuit
Figure 17. Unclamped inductive waveform
Figure 18. Switching time waveform
8/14
STD90N4F3 - STP90N4F3 - STU90N4F3
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
9/14
Package mechanical data
STD90N4F3 - STP90N4F3 - STU90N4F3
DPAK MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
MAX.
MIN.
MAX.
A
A1
A2
B
2.2
0.9
2.4
1.1
0.23
0.9
5.4
0.6
0.6
6.2
0.086
0.035
0.001
0.025
0.204
0.017
0.019
0.236
0.094
0.043
0.009
0.035
0.212
0.023
0.023
0.244
0.03
0.64
5.2
b4
C
0.45
0.48
6
C2
D
D1
E
5.1
0.200
6.4
6.6
0.252
0.260
E1
e
4.7
0.185
0.090
2.28
e1
H
4.4
9.35
1
4.6
0.173
0.368
0.039
0.181
0.397
10.1
L
(L1)
L2
L4
R
2.8
0.8
0.110
0.031
0.6
0°
1
0.023
0°
0.039
8°
0.2
0.008
V2
8°
0068772-F
10/14
STD90N4F3 - STP90N4F3 - STU90N4F3
Package mechanical data
TO-220 MECHANICAL DATA
mm.
inch
DIM.
MIN.
TYP
MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
MIN.
0.173
0.024
0.045
0.019
0.60
TYP.
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
A
b
4.40
0.61
1.15
0.49
15.25
10
b1
c
D
E
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
øP
Q
3.50
3.93
16.40
28.90
0.645
1.137
3.75
2.65
3.85
2.95
0.147
0.104
0.151
0.116
11/14
Packaging mechanical data
STD90N4F3 - STP90N4F3 - STU90N4F3
5
Packaging mechanical data
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
16.4
50
0.059
13.2 0.504 0.520
0.795
18.4 0.645 0.724
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
TAPE MECHANICAL DATA
2500
mm
MIN. MAX. MIN. MAX.
6.8 0.267 0.275
10.4 10.6 0.409 0.417
12.1 0.476
inch
DIM.
A0
B0
B1
D
7
1.5
1.5
1.6 0.059 0.063
0.059
D1
E
1.65 1.85 0.065 0.073
7.4 7.6 0.291 0.299
2.55 2.75 0.100 0.108
F
K0
P0
P1
P2
R
3.9
7.9
1.9
40
4.1 0.153 0.161
8.1 0.311 0.319
2.1 0.075 0.082
1.574
W
15.7
16.3 0.618 0.641
12/14
STD90N4F3 - STP90N4F3 - STU90N4F3
Revision history
6
Revision history
Table 8.
Date
29-Nov-2007
Document revision history
Revision
Changes
1
First release
13/14
STD90N4F3 - STP90N4F3 - STU90N4F3
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14/14
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