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STF16N65M5 [STMICROELECTRONICS]

N沟道650 V、0.230 Ohm典型值、12 A MDmesh M5功率MOSFET，TO-220FP封装;
STF16N65M5
型号： STF16N65M5
厂家： ST    ST
描述：

N沟道650 V、0.230 Ohm典型值、12 A MDmesh M5功率MOSFET，TO-220FP封装

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STB16N65M5  
STD16N65M5  
N-channel 650 V, 0.230 Ω, 12 A MDmesh™ V Power MOSFET  
in D²PAK, DPAK  
Features  
VDSS  
TJmax  
@
RDS(on)  
max.  
Type  
ID  
TAB  
TAB  
STB16N65M5  
STD16N65M5  
710 V  
< 0.279 Ω  
12 A  
3
3
1
1
■ DPAK worldwide best R  
DS(on)  
DPAK  
D²PAK  
■ Higher V  
rating  
DSS  
■ High dv/dt capability  
■ Excellent switching performance  
■ Easy to drive  
■ 100% avalanche tested  
Figure 1.  
Internal schematic diagram  
Application  
■ Switching applications  
$ꢅꢆꢇ4!"ꢈ  
Description  
These devices are N-channel MDmesh™ V  
Power MOSFETs based on an innovative  
proprietary vertical process technology, which is  
combined with STMicroelectronics’ well-known  
PowerMESH™ horizontal layout structure. The  
resulting product has extremely low on-  
resistance, which is unmatched among silicon  
based Power MOSFETs, making it especially  
suitable for applications which require superior  
power density and outstanding efficiency.  
'ꢅꢁꢈ  
3ꢅꢉꢈ  
!-ꢀꢁꢂꢃꢄVꢁ  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
D²PAK  
DPAK  
Packaging  
Tape and reel  
STB16N65M5  
STD16N65M5  
16N65M5  
October 2011  
Doc ID 18146 Rev 2  
1/19  
www.st.com  
19  
Contents  
STB16N65M5, STD16N65M5  
Contents  
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
2.1  
Electrical characteristics (curves)  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
3
4
5
6
Test circuits  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18  
2/19  
Doc ID 18146 Rev 2  
STB16N65M5, STD16N65M5  
Electrical ratings  
1
Electrical ratings  
Table 2.  
Symbol  
Absolute maximum ratings  
Parameter  
Value  
Unit  
VDS  
VGS  
ID  
Drain-source voltage  
650  
25  
V
V
Gate-source voltage  
Drain current (continuous) at TC = 25 °C  
Drain current (continuous) at TC = 100 °C  
Drain current (pulsed)  
12  
A
ID  
7.3  
48  
A
(1)  
IDM  
A
PTOT  
IAR  
Total dissipation at TC = 25 °C  
90  
W
Avalanche current, repetitive or not-  
repetitive (pulse width limited by Tj max)  
4
A
Single pulse avalanche energy  
EAS  
200  
mJ  
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)  
dv/dt (2) Peak diode recovery voltage slope  
15  
- 55 to 150  
150  
V/ns  
°C  
Tstg  
Tj  
Storage temperature  
Max. operating junction temperature  
°C  
1. Pulse width limited by safe operating area.  
2. ISD ≤ 12 A, di/dt ≤ 400 A/µs, VDD = 400 V, VPeak < V(BR)DSS  
Table 3.  
Symbol  
Thermal data  
Parameter  
Value  
Unit  
DPAK  
D²PAK  
Rthj-case Thermal resistance junction-case max  
1.38  
°C/W  
(1)  
Rthj-pcb  
Thermal resistance junction-pcb max  
50  
30  
°C/W  
1. When mounted on 1inch² FR-4 board, 2 oz Cu  
Doc ID 18146 Rev 2  
3/19  
Electrical characteristics  
STB16N65M5, STD16N65M5  
2
Electrical characteristics  
(T = 25 °C unless otherwise specified)  
C
Table 4.  
Symbol  
On /off states  
Parameter  
Test conditions  
Min.  
Typ.  
Max. Unit  
Drain-source  
V(BR)DSS breakdown voltage  
(VGS = 0)  
ID = 1 mA  
DS = 650 V  
650  
V
Zero gate voltage  
IDSS  
V
1
µA  
µA  
drain current (VGS = 0) VDS = 650 V, TC=125 °C  
100  
Gate-body leakage  
IGSS  
VGS  
=
25 V  
100  
5
nA  
V
current (VDS = 0)  
VGS(th)  
RDS(on)  
Gate threshold voltage VDS = VGS, ID = 250 µA  
3
4
Static drain-source on  
VGS = 10 V, ID = 6 A  
resistance  
0.230 0.279  
Ω
Table 5.  
Symbol  
Dynamic  
Parameter  
Test conditions  
Min.  
Typ.  
Max. Unit  
Input capacitance  
Ciss  
Coss  
Crss  
1250  
30  
pF  
VDS = 100 V, f = 1 MHz,  
VGS = 0  
Output capacitance  
-
-
-
pF  
pF  
Reverse transfer  
capacitance  
3
Equivalent  
capacitance time  
related  
(1)  
Co(tr)  
-
100  
pF  
VDS = 0 to 520 V, VGS = 0  
f = 1 MHz open drain  
Equivalent  
capacitance energy  
related  
(2)  
Co(er)  
-
-
30  
2
-
-
pF  
Intrinsic gate  
resistance  
RG  
Ω
Qg  
Qgs  
Qgd  
Total gate charge  
Gate-source charge  
Gate-drain charge  
VDD = 520 V, ID = 6 A,  
VGS = 10 V  
31  
8
nC  
nC  
nC  
-
-
(see Figure 18)  
12  
1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss  
when VDS increases from 0 to 80% VDSS  
2. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as  
Coss when VDS increases from 0 to 80% VDSS  
4/19  
Doc ID 18146 Rev 2  
 
STB16N65M5, STD16N65M5  
Electrical characteristics  
Table 6.  
Symbol  
Switching times  
Parameter  
Test conditions  
Min. Typ.  
Max Unit  
td (v)  
tr (v)  
tf (i)  
Voltage delay time  
Voltage rise time  
Current fall time  
Crossing time  
VDD = 400 V, ID = 8 A,  
RG = 4.7 Ω, VGS = 10 V  
(see Figure 19)  
25  
ns  
7
ns  
-
-
6
ns  
tc(off)  
(see Figure 22)  
8
ns  
Table 7.  
Symbol  
Source drain diode  
Parameter  
Test conditions  
Min. Typ. Max. Unit  
ISD  
Source-drain current  
12  
48  
A
A
-
-
(1)  
ISDM  
Source-drain current (pulsed)  
(2)  
VSD  
Forward on voltage  
ISD = 12 A, VGS = 0  
1.5  
V
trr  
Reverse recovery time  
Reverse recovery charge  
Reverse recovery current  
300  
3.5  
23  
ns  
nC  
A
ISD = 12 A, di/dt = 100 A/µs  
Qrr  
-
-
VDD = 100 V (see Figure 22)  
IRRM  
trr  
Reverse recovery time  
Reverse recovery charge  
Reverse recovery current  
ISD = 12 A, di/dt = 100 A/µs  
VDD = 100 V, Tj = 150 °C  
(see Figure 22)  
350  
4
ns  
nC  
A
Qrr  
IRRM  
24  
1. Pulse width limited by safe operating area  
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%  
Doc ID 18146 Rev 2  
5/19  
 
Electrical characteristics  
STB16N65M5, STD16N65M5  
Thermal impedance for D²PAK  
2.1  
Electrical characteristics (curves)  
Figure 2.  
Safe operating area for D²PAK  
Figure 3.  
Figure 5.  
Figure 7.  
AM08610v1  
I
D
(A)  
10  
10µs  
100µs  
1
1ms  
10ms  
0.1  
Tj=150°C  
Tc=25°C  
Single pulse  
0.01  
10  
VDS(V)  
0.1  
1
100  
Figure 4.  
Safe operating area for DPAK  
Thermal impedance for DPAK  
AM08609v1  
I
D
(A)  
10µs  
10  
100µs  
1
1ms  
10ms  
0.1  
Tj=150°C  
Tc=25°C  
Single pulse  
0.01  
10  
V
DS(V)  
0.1  
1
100  
Figure 6.  
Output characteristics  
Transfer characteristics  
AM03178v1  
AM03179v1  
I
D
(A)  
ID  
(A)  
V
GS=10V  
VDS=10V  
7.5V  
7V  
20  
20  
15  
15  
10  
6.5V  
6V  
10  
5
5
0
5.5V  
0
2
4
6
8
10 12 14 16 18  
8
9
VGS(V)  
VDS(V)  
7
0
4
5
6
3
6/19  
Doc ID 18146 Rev 2  
 
 
 
STB16N65M5, STD16N65M5  
Electrical characteristics  
Figure 8.  
Normalized B  
vs. temperature Figure 9.  
Static drain-source on resistance  
VDSS  
AM03187v1  
AM03181v1  
BVDSS  
R
DS(on)  
(Ω)  
(norm)  
ID=1mA  
VGS=10V  
1.07  
1.05  
0.245  
0.240  
1.03  
0.235  
1.01  
0.99  
0.230  
0.225  
0.220  
0.97  
0.95  
0.93  
0.215  
0.210  
-50  
10 12  
I
-25  
0
25 50 75  
TJ  
(°C)  
0
4
6
8
D(A)  
100  
2
Figure 10. Output capacitance stored energy Figure 11. Capacitance variations  
AM03312v1  
AM03183v1  
Eoss  
C
(µJ)  
(pF)  
7
6
5
10000  
1000  
Ciss  
4
3
2
100  
10  
1
Coss  
Crss  
1
0
200  
100  
400 500  
0.1  
100  
0
300  
600 VDS(V)  
1
10  
VDS(V)  
Figure 12. Gate charge vs. gate-source  
voltage  
Figure 13. Normalized on resistance vs.  
temperature  
AM03182v1  
AM03185v1  
V
(V)  
GS  
R
DS(on)  
(norm)  
V
DD=520V  
V
GS=10V  
V
GS  
2.1  
ID=6.5V  
12  
V
ID=6A  
GS=10V  
500  
400  
300  
200  
100  
V
DS  
1.9  
1.7  
10  
8
1.5  
1.3  
1.1  
6
4
0.9  
0.7  
0.5  
2
0
25 30 35  
-50  
TJ(°C)  
0
5
10 15 20  
Q
g(nC)  
0
50  
100  
Doc ID 18146 Rev 2  
7/19  
 
 
 
Electrical characteristics  
STB16N65M5, STD16N65M5  
Figure 14. Normalized gate threshold voltage Figure 15. Source-drain diode forward  
vs. temperature characteristics  
AM03184v1  
AM03186v1  
VGS(th)  
VSD  
(V)  
(norm)  
ID=250µA  
1.10  
1.00  
0.90  
1.0  
TJ=-25°C  
0.9  
0.8  
TJ=25°C  
TJ=150°C  
0.7  
0.6  
0.80  
0.5  
0.4  
0.70  
-50  
0
TJ(°C)  
ISD(A)  
0
50  
5
10  
100  
Figure 16. Switching losses vs. gate  
(1)  
resistance  
AM10359v1  
E
(µJ)  
100  
Eon  
80  
60  
40  
20  
0
Eoff  
0
20  
30  
40  
10  
RG(Ω)  
1. Eon including reverse recovery of a SiC diode.  
8/19  
Doc ID 18146 Rev 2  
 
 
STB16N65M5, STD16N65M5  
Test circuits  
3
Test circuits  
Figure 17. Switching times test circuit for  
resistive load  
Figure 18. Gate charge test circuit  
VDD  
12V  
47kΩ  
1kΩ  
100nF  
2200  
3.3  
µF  
RL  
µF  
IG=CONST  
VDD  
100Ω  
Vi=20V=VGMAX  
D.U.T.  
VG  
VD  
RG  
VGS  
2200  
µF  
D.U.T.  
2.7kΩ  
47kΩ  
PW  
1kΩ  
PW  
AM01468v1  
AM01469v1  
Figure 19. Test circuit for inductive load  
switching and diode recovery times  
Figure 20. Unclamped inductive load test  
circuit  
L
A
A
A
B
D
FAST  
DIODE  
L=100µH  
VD  
G
2200  
µF  
D.U.T.  
B
3.3  
µF  
VDD  
S
3.3  
µF  
1000  
µF  
B
VDD  
25  
Ω
ID  
D
G
RG  
S
Vi  
D.U.T.  
Pw  
AM01470v1  
AM01471v1  
Figure 21. Unclamped inductive waveform  
Figure 22. Switching time waveform  
Concept waveform for Inductive Load Turn-off  
V(BR)DSS  
Id  
VD  
90%Vds  
90%Id  
Tdelay-off  
IDM  
Vgs  
90%Vgs  
10%Vds  
on  
ID  
Vgs(I(t))  
VDD  
VDD  
10%Id  
Vds  
Trise  
Tfall  
Tcross -over  
AM01472v1  
AM05540v1  
Doc ID 18146 Rev 2  
9/19  
Package mechanical data  
STB16N65M5, STD16N65M5  
4
Package mechanical data  
In order to meet environmental requirements, ST offers these devices in different grades of  
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK  
specifications, grade definitions and product status are available at: www.st.com. ECOPACK  
is an ST trademark.  
10/19  
Doc ID 18146 Rev 2  
 
STB16N65M5, STD16N65M5  
Package mechanical data  
Table 8.  
Dim.  
D²PAK (TO-263) mechanical data  
mm  
Min.  
Typ.  
Max.  
A
A1  
b
4.40  
0.03  
0.70  
1.14  
0.45  
1.23  
8.95  
7.50  
10  
4.60  
0.23  
0.93  
1.70  
0.60  
1.36  
9.35  
b2  
c
c2  
D
D1  
E
10.40  
E1  
e
8.50  
2.54  
e1  
H
4.88  
15  
5.28  
15.85  
2.69  
2.79  
1.40  
1.75  
J1  
L
2.49  
2.29  
1.27  
1.30  
L1  
L2  
R
0.4  
V2  
0°  
8°  
Doc ID 18146 Rev 2  
11/19  
Package mechanical data  
Figure 23. D²PAK (TO-263) drawing  
STB16N65M5, STD16N65M5  
0079457_S  
(a)  
Figure 24. D²PAK footprint  
16.90  
12.20  
5.08  
1.60  
3.50  
9.75  
Footprint  
a. All dimensions are in millimeters  
12/19  
Doc ID 18146 Rev 2  
STB16N65M5, STD16N65M5  
Package mechanical data  
Table 9.  
Dim.  
DPAK (TO-252) mechanical data  
mm  
Min.  
Typ.  
Max.  
A
A1  
A2  
b
2.20  
0.90  
0.03  
0.64  
5.20  
0.45  
0.48  
6.00  
2.40  
1.10  
0.23  
0.90  
5.40  
0.60  
0.60  
6.20  
b4  
c
c2  
D
D1  
E
5.10  
6.40  
6.60  
E1  
e
4.70  
2.28  
e1  
H
4.40  
9.35  
1
4.60  
10.10  
1.50  
L
L1  
L2  
L4  
R
2.80  
0.80  
0.60  
0°  
1
0.20  
V2  
8°  
Doc ID 18146 Rev 2  
13/19  
Package mechanical data  
Figure 25. DPAK (TO-252) drawing  
STB16N65M5, STD16N65M5  
0068772_H  
(b)  
Figure 26. DPAK footprint  
6.7  
3
1.8  
1.6  
2.3  
2.3  
6.7  
1.6  
AM08850v1  
b. All dimensions are in millimeters  
14/19  
Doc ID 18146 Rev 2  
STB16N65M5, STD16N65M5  
Packaging mechanical data  
5
Packaging mechanical data  
Table 10. D²PAK (TO-263) tape and reel mechanical data  
Tape  
Reel  
mm  
mm  
Dim.  
Dim.  
Min.  
Max.  
Min.  
Max.  
A0  
B0  
D
10.5  
15.7  
1.5  
10.7  
15.9  
1.6  
A
B
C
D
G
N
T
330  
1.5  
12.8  
20.2  
24.4  
100  
13.2  
26.4  
30.4  
D1  
E
1.59  
1.65  
11.4  
4.8  
1.61  
1.85  
11.6  
5.0  
F
K0  
P0  
P1  
P2  
R
3.9  
4.1  
11.9  
1.9  
12.1  
2.1  
Base qty  
Bulk qty  
1000  
1000  
50  
T
0.25  
23.7  
0.35  
24.3  
W
Table 11. DPAK (TO-252) tape and reel mechanical data  
Tape  
Reel  
mm  
mm  
Dim.  
Dim.  
Min.  
Max.  
Min.  
Max.  
A0  
B0  
B1  
D
6.8  
7
A
B
C
D
G
N
T
330  
10.4  
10.6  
12.1  
1.6  
1.5  
12.8  
20.2  
16.4  
50  
13.2  
18.4  
22.4  
1.5  
1.5  
D1  
E
1.65  
7.4  
1.85  
7.6  
F
K0  
P0  
P1  
2.55  
3.9  
2.75  
4.1  
Base qty.  
Bulk qty.  
2500  
2500  
7.9  
8.1  
Doc ID 18146 Rev 2  
15/19  
 
Packaging mechanical data  
STB16N65M5, STD16N65M5  
Table 11. DPAK (TO-252) tape and reel mechanical data (continued)  
Tape Reel  
mm  
mm  
Dim.  
Dim.  
Min.  
Max.  
Min.  
Max.  
P2  
R
1.9  
40  
2.1  
T
0.25  
15.7  
0.35  
16.3  
W
Figure 27. Tape  
10 pitches cumulative  
tolerance on tape +/- 0.2 mm  
P0  
D
P2  
Top cover  
tape  
T
E
F
W
K0  
B0  
A0  
D1  
P1  
User direction of feed  
R
Bending radius  
User direction of feed  
AM08852v2  
16/19  
Doc ID 18146 Rev 2  
STB16N65M5, STD16N65M5  
Figure 28. Reel  
Packaging mechanical data  
T
REEL DIMENSIONS  
40mm min.  
Access hole  
At sl ot location  
B
D
C
N
A
G measured at hub  
Full radius  
Tape slot  
in core for  
tape start 25 mm min.  
width  
AM08851v2  
Doc ID 18146 Rev 2  
17/19  
Revision history  
STB16N65M5, STD16N65M5  
6
Revision history  
Table 12. Document revision history  
Date  
Revision  
Changes  
09-Nov-2010  
1
First release.  
Modified Section 2.1: Electrical characteristics (curves):  
– Figure 6, Figure 7, Figure 8, Figure 9, Figure 13 and Figure 14  
– Added Figure 15  
Updated RDS(on) value in coverpage and in Table 4  
Updated values in Table 6  
14-Oct-2011  
2
Updated Section 4: Package mechanical data and Section 5:  
Packaging mechanical data.  
Minor text changes.  
18/19  
Doc ID 18146 Rev 2  
STB16N65M5, STD16N65M5  
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Doc ID 18146 Rev 2  
19/19  

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