STGB5NC60KD [STMICROELECTRONICS]
20A, 600V, N-CHANNEL IGBT, D2PAK-3;
| 型号： | STGB5NC60KD |
| 厂家： | 
ST |
| 描述： | 20A, 600V, N-CHANNEL IGBT, D2PAK-3 栅 双极性晶体管 功率控制 |
| 文件： | 总11页 (文件大小：211K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STGP5NC60KD - STGF5NC60KD
STGB5NC60KD
N-CHANNEL 5A - 600V - TO-220/TO-220FP/D2PAK
SHORT CIRCUIT RATED PowerMESH™ IGBT
TARGET SPECIFICATION
Table 1: General Features
Figure 1: Package
TYPE
V
V
(Max)
I
C
CES
CE(sat)
@25°C
@100°C
STGB5NC60KD
STGF5NC60KD
STGP5NC60KD
600 V
600 V
600 V
< 2.5 V
< 2.5 V
< 2.5 V
10 A
5 A
10 A
3
3
■ LOWER ON-VOLTAGE DROP (V
)
cesat
2
2
1
1
■ OFF LOSSES INCLUDE TAIL CURRENT
■ LOWER C / C RATIO
TO-220
TO-220FP
RES
IES
■ SWITCHING LOSSES INCLUDE DIODE
RECOVERY ENERGY
■ VERY SOFT ULTRA FAST RECOVERY
ANTIPARALLEL DIODE
■ NEW GENERATION PRODUCTS WITH
TIGHTER PARAMETER DISTRUBUTION
3
1
2
D PAK
Figure 2: Internal Schematic Diagram
DESCRIPTION
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the Pow-
™
erMESH IGBTs, with outstanding performances.
The suffix “K” identifies a family optimized for high
frequency motor control applications with short cir-
cuit withstand capability.
APPLICATIONS
■ HIGH FREQUENCY MOTOR CONTROLS
■ SMPS and PFC IN BOTH HARD SWITCH AND
RESONANT TOPOLOGIES
■ MOTOR DRIVERS
Table 2: Order Codes
SALES TYPE
STGB5NC60KDT4
STGF5NC60KD
STGP5NC60KD
MARKING
GB5NC60KD
GF5NC60KD
GP5NC60KD
PACKAGE
PACKAGING
TAPE & REEL
TUBE
2
D PAK
TO-220FP
TO-220
TUBE
Rev. 2
March 2005
1/11
STGP5NC60KD - STGB5NC60KD - STGF5NC60KD
Table 3: Absolute Maximum ratings
Symbol
Parameter
Value
STGB5NC60KD
STGP5NC60KD
600
Unit
STGF5NC60KD
V
CES
Collector-Emitter Voltage (V = 0)
V
V
GS
V
ECR
Emitter-Collector Voltage
Gate-Emitter Voltage
20
V
±20
V
GE
I
Collector Current (continuous) at T = 25°C (#)
20
10
8
5
A
C
C
I
C
Collector Current (continuous) at T = 100°C (#)
A
C
I
( )
Collector Current (pulsed)
40
A
CM
P
Total Dissipation at T = 25°C
60
0.48
--
25
W
W/°C
V
TOT
C
Derating Factor
0.20
2500
V
Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25°C)
Storage Temperature
ISO
T
stg
– 55 to 150
°C
T
Operating Junction Temperature
j
( )Pulse width limited by max. junction temperature.
Table 4: Thermal Data
Min.
Typ.
Max.
Rthj-case Thermal Resistance Junction-case
TO-220
D2PAK
2.08
°C/W
TO-220FP
5.0
°C/W
°C/W
°C
Rthj-amb Thermal Resistance Junction-ambient
62.5
T
Maximum Lead Temperature for Soldering
Purpose (1.6 mm from case, for 10 sec.)
300
L
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SPECIFIED)
CASE
Table 5: Main Parameters
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
Collector-Emitter
I = 1 mA, V = 0
600
V
BR(CES)
C
GE
Breakdown Voltage
I
Collector cut-off Current
(V = 0)
GE
V
= Max Rating,
10
1
µA
mA
CES
CE
T = 25°C
C
V
CE
=Max Rating,
T = 125°C
C
I
Gate-Emitter Leakage
V
= ±20V , V = 0
±100
nA
V
GES
GE
CE
Current (V = 0)
CE
V
GE(th)
V
CE
= V , I = 250 µA
Gate Threshold Voltage
5
7
GE
C
V
Collector-Emitter
Saturation Voltage
V
V
= 15V, I = 5A
2
1.8
2.5
V
V
CE(sat)
GE
C
= 15V, I = 5A,
GE
C
Tc= 125°C
(#) Calculated according to the iterative formula:
T
– T
JMAX
-------------------------------------------------------------------------------------------------
(T ) =
C
I
C
C
R
× V
(T , I )
THJ – C
CESAT(MAX) C C
2/11
STGP5NC60KD - STGB5NC60KD - STGF5NC60KD
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 6: Dynamic
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g (1)
V
V
= 15 V I = 5 A
15
S
Forward Transconductance
fs
CE
, C
C
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
= 25V, f = 1 MHz, V = 0
410
48
9
pF
pF
pF
ies
CE
GE
C
oes
C
res
Q
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
V
= 390 V, I = 5 A,
= 15V,
19
TBD
TBD
nC
nC
nC
g
CE
C
Q
ge
Q
gc
GE
(see Figure 5)
= 0.5 V , Tj = 125°C
BR(CES)
t
Short Circuit Withstand Time
V
TBD
µs
scw
CE
R
G
= 10 Ω, V = 15V
GE
Table 7: Switching On
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
V
= 390 V, I = 5 A
ns
ns
A/µs
TBD
TBD
TBD
d(on)
CC
C
t
r
R = 10Ω, V = 15V, Tj= 25°C
G GE
(see Figure 3)
(di/dt)
on
t
Turn-on Delay Time
Current Rise Time
Turn-on Current Slope
V
= 390 V, I = 5 A
TBD
TBD
TBD
ns
ns
A/µs
d(on)
CC
C
t
r
R = 10Ω, V = 15V, Tj=125°C
G GE
(see Figure 3)
(di/dt)
on
Table 8: Switching Off
Symbol
Parameter
Test Conditions
= 390 V, I = 5 A,
Min.
Typ.
TBD
TBD
70
Max.
Unit
ns
t (V
)
off
V
cc
R
Off Voltage Rise Time
Turn-off Delay Time
Current Fall Time
r
C
= 10 Ω , V = 15 V
GE
GE
t (
d off
)
ns
T = 25 °C
(see Figure 3)
J
t
f
ns
t (V
)
V
R
= 390 V, I = 5 A,
Off Voltage Rise Time
Turn-off Delay Time
Current Fall Time
TBD
TBD
TBD
ns
r
off
cc C
= 10 Ω , V = 15 V
GE
GE
t (
d off
)
ns
Tj = 125 °C
(see Figure 3)
t
f
ns
Table 9: Switching Energy
Symbol
Parameter
Test Conditions
= 390 V, I = 75 A
R = 10 Ω, V = 15V, Tj= 25°C
G GE
Min.
Typ.
Max.
Unit
Eon (2)
Turn-on Switching Losses
Turn-off Switching Losses
Total Switching Losses
V
CC
TBD
TBD
TBD
µJ
µJ
µJ
C
E
(3)
off
E
ts
(see Figure 3)
Eon (2)
Turn-on Switching Losses
Turn-off Switching Losses
Total Switching Losses
V
= 390 V, I = 5 A
TBD
TBD
TBD
µJ
µJ
µJ
CC
C
E
(3)
R = 10 Ω, V = 15V, Tj= 125°C
G GE
(see Figure 3)
off
E
ts
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
(2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode,
the co-pack diode is used as external diode. IGBTs & DIODE are at the same temperature (25°C and 125°C)
(3)Turn-off losses include also the tail of the collector current.
3/11
STGP5NC60KD - STGB5NC60KD - STGF5NC60KD
Table 10: Collector-Emitter Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
Forward Current
5
12
A
A
f
I
Forward Current Pulsed
Forward On-Voltage
fm
V
I = 1.5 A
I = 1.5 A, Tj = 125 °C
f
1.6
1.3
2.0
V
V
f
f
t
Q
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I = 1.5 A ,V = 30 V,
Tj = 25°C, di/dt = 100 A/µs
(see Figure 6)
TBD
TBD
TBD
ns
nC
A
rr
f
R
rr
I
rrm
t
Q
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I = 1.5 A ,V = 30 V,
Tj =125°C, di/dt = 100 A/µs
(see Figure 6)
TBD
TBD
TBD
ns
nC
A
rr
f
R
rr
I
rrm
4/11
STGP5NC60KD - STGB5NC60KD - STGF5NC60KD
Figure 3: Test Circuit for Inductive Load
Figure 5: Gate Charge Test Circuit
Switching
Figure 4: Switching Waveforms
Figure 6: Diode Recovery Times Waveform
5/11
STGP5NC60KD - STGB5NC60KD - STGF5NC60KD
TO-220 MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.40
0.61
1.15
0.49
15.25
10
MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
MIN.
0.173
0.024
0.045
0.019
0.60
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
A
b
b1
c
D
E
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
øP
Q
3.50
3.93
16.40
28.90
0.645
1.137
3.75
2.65
3.85
2.95
0.147
0.104
0.151
0.116
6/11
STGP5NC60KD - STGB5NC60KD - STGF5NC60KD
TO-220FP MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.4
MAX.
4.6
2.7
2.75
0.7
1
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
2.5
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.7
1.7
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L5
L6
L7
Ø
16
0.630
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
1.126
.0385
0.114
0.626
0.354
0.118
1.204
0.417
0.141
0.645
0.366
0.126
16.4
9.3
3
3.2
L3
L6
L7
1 2
L4
3
L5
L2
7/11
STGP5NC60KD - STGB5NC60KD - STGF5NC60KD
D2PAK MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
4.4
TYP
MAX.
4.6
MIN.
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
MAX.
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
A
A1
A2
B
2.49
0.03
0.7
2.69
0.23
0.93
1.7
B2
C
1.14
0.45
1.23
8.95
0.6
C2
D
1.36
9.35
D1
E
8
0.315
0.334
10
10.4
0.393
E1
G
8.5
4.88
15
5.28
15.85
1.4
0.192
0.590
0.050
0.055
0.094
0.208
0.625
0.055
0.068
0.126
L
L2
L3
M
1.27
1.4
1.75
3.2
2.4
R
0.4
0.015
V2
0º
4º
3
1
8/11
STGP5NC60KD - STGB5NC60KD - STGF5NC60KD
TUBE SHIPMENT (no suffix)*
2
D PAK FOOTPRINT
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
24.4
100
0.059
13.2 0.504 0.520
0795
26.4 0.960 1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
TAPE MECHANICAL DATA
1000
mm
inch
DIM.
MIN. MAX. MIN. MAX.
10.5 10.7 0.413 0.421
15.7 15.9 0.618 0.626
A0
B0
D
1.5
1.6 0.059 0.063
D1
E
1.59 1.61 0.062 0.063
1.65 1.85 0.065 0.073
F
11.4
4.8
3.9
11.9
1.9
50
11.6 0.449 0.456
5.0 0.189 0.197
4.1 0.153 0.161
12.1 0.468 0.476
2.1 0.075 0.082
1.574
K0
P0
P1
P2
R
T
0.25 0.35 0.0098 0.0137
23.7 24.3 0.933 0.956
W
* on sales type
9/11
STGP5NC60KD - STGB5NC60KD - STGF5NC60KD
Figure 7: Revision History
Date
Revision
Description of Changes
14-Feb-2005
07-Mar-2005
1
2
New release
Updated version
10/11
STGP5NC60KD - STGB5NC60KD - STGF5NC60KD
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
All other names are the property of their respective owners
© 2005 STMicroelectronics - All Rights Reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
11/11
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