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STGE200NB60S [STMICROELECTRONICS]

N-CHANNEL 150A - 600V - ISOTOP PowerMESH⑩ IGBT; N沟道150A - 600V - ISOTOP PowerMESH⑩ IGBT
STGE200NB60S
型号： STGE200NB60S
厂家： ST    ST
描述：

N-CHANNEL 150A - 600V - ISOTOP PowerMESH⑩ IGBT
N沟道150A - 600V - ISOTOP PowerMESH⑩ IGBT

双极性晶体管
文件： 总9页 (文件大小：337K)
中文：  中文翻译
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STGE200NB60S  
N-CHANNEL 150A - 600V - ISOTOP  
PowerMESH™ IGBT  
TYPE  
V
CE(sat)  
(typ.)  
V
I
T
C
CES  
C
STGE200NB60S  
600 V  
1.2 V  
1.3 V  
150 A 100°C  
200 A 25°C  
■
■
■
■
■
HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)  
LOW ON-VOLTAGE DROP (V  
OFF LOSSES INCLUDE TAIL CURRENT  
LOW GATE CHARGE  
)
cesat  
HIGH CURRENT CAPABILITY  
ISOTOP  
DESCRIPTION  
INTERNAL SCHEMATIC DIAGRAM  
Using the latest high voltage technology based on a  
patented strip layout, STMicroelectronics has  
designed an advanced family of IGBTs, the  
™
PowerMESH IGBTs, with outstanding  
performances. The suffix “S” identifies a family  
optimized to achieve very low VCE(sat) (@ max  
frequency of 1KHz).  
APPLICATIONS  
■
LOW FREQUENCY MOTOR CONTROLS  
■
ALUMINUM WELDING EQUIPMENT  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
600  
Unit  
V
Collector-Emitter Voltage (V = 0)  
V
V
CES  
GS  
V
Gate-Emitter Voltage  
±20  
GE  
I
Collector Current (continuous) at T = 25°C  
200  
A
C
C
I
Collector Current (continuous) at T = 100°C  
150  
A
C
C
I
( )  
Collector Current (pulsed)  
400  
A
CM  
P
TOT  
Total Dissipation at T = 25°C  
600  
W
C
Derating Factor  
4.8  
W/°C  
°C  
°C  
T
stg  
Storage Temperature  
– 65 to 150  
150  
T
Max. Operating Junction Temperature  
j
(
) PULSE WIDTH LIMITED BY SAFE OPERATING AREA  
June 2003  
1/9  
STGE200NB60S  
THERMAL DATA  
Rthj-case  
Rthj-amb  
Thermal Resistance Junction-case Max  
Thermal Resistance Junction-ambient Max  
0.208  
30  
°C/W  
°C/W  
ELECTRICAL CHARACTERISTICS (T  
= 25 °C UNLESS OTHERWISE SPECIFIED)  
CASE  
OFF  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
V
Collector-Emitter Breakdown  
Voltage  
I
= 250 µA, V = 0  
600  
V
BR(CES)  
C
GE  
I
Collector cut-off  
(V = 0)  
GE  
V
V
V
= Max Rating, T = 25 °C  
500  
5
µA  
mA  
nA  
CES  
CE  
C
= Max Rating, T = 125 °C  
CE  
GE  
C
I
Gate-Emitter Leakage  
= ±20V , V = 0  
±100  
GES  
CE  
Current (V = 0)  
CE  
ON (1)  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
5
Unit  
V
V
V
V
V
V
= V , I = 250µA  
Gate Threshold Voltage  
3
GE(th)  
CE  
GE  
GE  
GE  
C
Collector-Emitter Saturation  
Voltage  
= 15V, I = 100 A  
1.2  
1.2  
1.6  
V
CE(sat)  
C
= 15V, I =150 A, Tj =100°C  
V
C
DYNAMIC  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
g
V
V
= 15 V I = 100 A  
Forward Transconductance  
80  
S
fs  
CE  
CE  
, C  
C
Input Capacitance  
Output Capacitance  
Reverse Transfer  
Capacitance  
15600  
1100  
95  
pF  
pF  
pF  
ies  
C
oes  
= 25V, f = 1 MHz, V = 0  
GE  
C
res  
Q
V
V
= 480V, I = 100 A,  
= 15V  
Total Gate Charge  
Gate-Emitter Charge  
Gate-Collector Charge  
560  
70  
170  
nC  
nC  
nC  
g
CE  
GE  
C
Q
ge  
Q
gc  
I
Latching Current  
V
= 480 V  
300  
A
CL  
clamp  
Tj = 125°C , R = 10 Ω  
G
SWITCHING ON  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
t
V
R
= 480 V, I = 100 A  
CC C  
Turn-on Delay Time  
Rise Time  
64  
112  
µs  
µs  
d(on)  
t
r
= 2Ω , V = 15 V  
G
GE  
(di/dt)  
Eon  
Turn-on Current Slope  
Turn-on Switching Losses  
V
V
= 480 V, I = 100 A R =2Ω  
= 15 V,Tj = 125°C  
1800  
12  
A/µs  
mJ  
on  
CC  
GE  
C
G
ELECTRICAL CHARACTERISTICS (CONTINUED)  
2/9  
STGE200NB60S  
SWITCHING OFF  
Symbol  
Parameter  
Cross-over Time  
Test Conditions  
Min.  
Typ.  
2.98  
1.7  
2.4  
1.23  
59  
Max.  
Unit  
µs  
t
c
V
R
= 480 V, I = 100 A,  
cc  
C
= 2 Ω , V = 15 V  
GE  
GE  
t (V  
)
off  
Off Voltage Rise Time  
Delay Time  
µs  
r
t (  
d off  
)
µs  
t
f
Fall Time  
µs  
E
off  
(**)  
Turn-off Switching Loss  
Total Switching Loss  
Cross-over Time  
Off Voltage Rise Time  
Delay Time  
mJ  
mJ  
µs  
E
ts  
71  
t
V
cc  
= 480 V, I = 100 A,  
C
= 2 Ω , V = 15 V  
GE  
4.52  
2.6  
2.8  
1.8  
92  
c
R
GE  
t (V  
)
off  
µs  
r
Tj = 125 °C  
t (  
d off  
)
µs  
t
f
Fall Time  
µs  
E
off  
(**)  
Turn-off Switching Loss  
Total Switching Loss  
mJ  
mJ  
E
ts  
105  
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.  
2. Pulse width limited by max. junction temperature.  
(**)Losses include Also the Tail (Jedec Standardization)  
3/9  
STGE200NB60S  
Thermal Impedance  
Switching Off Safe Operating Area  
Transfer Characteristics  
Output Characteristics  
Normalized Gate Threshold Voltage vs Temp.  
Transconductance  
4/9  
STGE200NB60S  
Collector-Emitter On Voltage vs Temperature  
Gate-Charge vs Gate-Emitter Voltage  
Capacitance Variations  
Normalized Break-down Voltage vs Temp.  
Total Switching losses vs Gate Resistance  
Total Switching losses vs Temperature  
5/9  
STGE200NB60S  
Total Switching losses vs Ic  
Collector-Emitter on Voltage vs Current  
6/9  
STGE200NB60S  
Fig. 1: Gate Charge test Circuit  
Fig. 2: Test Circuit For Inductive Load Switching  
7/9  
STGE200NB60S  
ISOTOP MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
11.8  
8.9  
TYP.  
MAX.  
12.2  
9.1  
MIN.  
0.466  
0.350  
0.076  
0.029  
0.496  
0.990  
1.240  
0.157  
0.161  
0.586  
1.185  
1.488  
0.157  
0.307  
MAX.  
0.480  
0.358  
0.080  
0.033  
0.503  
1.003  
1.248  
A
B
C
D
E
F
1.95  
0.75  
12.6  
25.15  
31.5  
4
2.05  
0.85  
12.8  
25.5  
31.7  
G
H
J
4.1  
4.3  
0.169  
0.594  
1.193  
1.503  
K
L
14.9  
30.1  
37.8  
4
15.1  
30.3  
38.2  
M
N
O
7.8  
8.2  
0.322  
A
G
B
O
N
J
C
K
L
M
8/9  
STGE200NB60S  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the  
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from  
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications  
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information  
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or  
systems without express written approval of STMicroelectronics.  
© The ST logo is a registered trademark of STMicroelectronics  
© 2003 STMicroelectronics - Printed in Italy - All Rights Reserved  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco  
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.  
© http://www.st.com  
9/9  

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