STGP3NB60HDFP [STMICROELECTRONICS]
N-CHANNEL 3A - 600V TO-220/FP PowerMESH IGBT; N沟道3A - 600V TO- 220 / FP的PowerMESH IGBT
| 型号： | STGP3NB60HDFP |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 3A - 600V TO-220/FP PowerMESH IGBT |
| 文件： | 总9页 (文件大小：106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STGP3NB60HD
STGP3NB60HDFP
N-CHANNEL 3A - 600V TO-220/FP
PowerMESH IGBT
TYPE
VCES
VCE(sat)
IC
STGP3NB60HD
STGP3NB60HDFP
600 V
600 V
< 2.8 V
< 2.8 V
3 A
3 A
■
HIGH INPUT IMPEDANCE
(VOLTAGEDRIVEN)
■
■
■
■
■
■
LOW ON-VOLTAGEDROP (Vcesat
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
VERY HIGH FREQUENCY OPERATION
OFF LOSSES INCLUDE TAIL CURRENT
CO-PACKAGED WITH TURBOSWITCH
ANTIPARALLEL DIODE
)
3
3
2
2
1
1
TO-220
TO-220FP
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH
IGBTs,
with
outstanding
INTERNAL SCHEMATIC DIAGRAM
perfomances. The suffix ”H” identifies a family
optimized to achieve very low switching times for
high frequency applications (<120kHz).
APPLICATIONS
■
HIGH FREQUENCY MOTOR CONTROLS
SMPS AND PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
■
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STGP7NB60HD
STGP7NB60HDFP
VCES
VGE
IC
Collector-Emitter Voltage (VGS = 0)
Gate-Emitter Voltage
600
± 20
6
600
± 20
6
V
V
o
Collector Current (continuous) at Tc = 25 C
A
o
IC
Collector Current (continuous) at Tc = 100 C
3
3
A
ICM(• )
Ptot
Collector Current (pulsed)
24
24
A
o
Total Dissipation at Tc = 25 C
70
35
W
Derating Factor
0.56
0.28
W/oC
oC
oC
Tstg
Tj
Storage Temperature
-65 to 150
150
Max. Operating Junction Temperature
•
( ) Pulse width limited by max. junction temperature
1/9
June 1999
STGP3NB60HD/FP
THERMAL DATA
TO-220
TO-220FP
Rthj-case Thermal Resistance Junction-case
Max
1.78
3.57
oC/W
Rthj-amb Thermal Resistance Junction-ambient
Rthc-sink Thermal Resistance Case-sink
Max
Typ
62.5
0.5
oC/W
oC/W
(Tj = 25 oC unless otherwise specified)
ELECTRICAL CHARACTERISTICS
OFF
Symbol
Parameter
Test Conditions
IC = 250 µA VGE = 0
Min.
Typ.
Max.
Unit
V
VBR(CES) Collector-Emitter
Breakdown Voltage
600
ICES
Collector cut-off
(VGE = 0)
VCE = Max Rating
VCE = Max Rating
Tj = 25 oC
Tj = 125 oC
100
1000
µA
µA
IGES
Gate-Emitter Leakage
Current (VCE = 0)
VGE = ± 20 V
VCE = 0
± 100
nA
ON ( )
Symbol
VGE(th)
Parameter
Test Conditions
Min.
3
Typ.
Max.
5
Unit
V
Gate Threshold
Voltage
VCE = VGE IC = 250 µA
VCE(SAT) Collector-Emitter
Saturation Voltage
VGE = 15 V IC = 3 A
VGE = 15 V IC = 3 A
2.4
1.9
2.8
V
V
o
Tj = 125 C
DYNAMIC
Symbol
gfs
Parameter
Forward
Test Conditions
IC = 3 A
Min.
1.3
Typ.
2.4
Max.
Unit
S
VCE =25 V
Transconductance
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VCE = 25 V f = 1 MHz VGE = 0
160
23
4.5
235
33
6.6
300
43
8.6
pF
pF
pF
QG
QGE
QGC
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCE = 480 V IC = 3 A
VGE = 15 V
21
6
7.6
27
nC
nC
nC
ICL
Latching Current
Vclamp = 480 V RG=10Ω
12
A
Tj = 150 oC
SWITCHING ON
Symbol
Parameter
Delay Time
Rise Time
(di/dt)on Turn-on Current Slope
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
VCC = 480 V
VGE= 15 V
IC = 3 A
RG = 10Ω
16
30
ns
ns
V
CC = 480 V
IC = 3 A
400
A/ s
µ
RG = 10 Ω
VGE = 15 V
Eon(❍)
Turn-on
Tj = 125 oC
77
J
µ
Switching Losses
2/9
STGP3NB60HD/FP
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING OFF
Symbol
tc
Parameter
Test Conditions
CC = 480 V
GE = 10
Min.
Typ.
Max.
Unit
Cross-Over Time
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
Total Switching Loss
V
R
IC = 3 A
VGE = 15 V
90
36
53
70
33
ns
ns
ns
ns
µJ
tr(voff
)
Ω
td(off
tf
)
Eoff(**)
Ets(❍)
100
J
µ
tc
tr(voff
td(off
tf
Eoff(**)
Ets(❍)
Cross-Over Time
Off Voltage Rise Time RGE = 10
Delay Time
Fall Time
Turn-off Switching Loss
Total Switching Loss
V
CC = 480 V
IC = 3 A
VGE = 15 V
180
82
58
110
88
165
ns
ns
ns
ns
)
)
Ω
Tj = 125 oC
J
J
µ
µ
COLLECTOR-EMITTER DIODE
Symbol
Parameter
Forward Current
Test Conditions
Min.
Typ. Max. Unit
If
Ifm
3
A
A
Forward Current pulsed
24
Vf
Forward On-Voltage
If = 3 A
If = 3 A
1.6
1.4
2.0
V
V
Tj = 125 oC
trr
Qrr
Irrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
If = 3 A
dI/dt = 100 A/µS
VR=200 V
Tj = 125 C
87
160
3.7
ns
nC
A
o
( ) Pulse width limited by max. junction temperature
•
(❍) Include recovery lossess on the STTA306 freewheeling diode
( ) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
µ
(**)Losses Include Also The Tail (Jedec Standardization)
Thermal Impedeance For TO-220
Thermal ImpedeanceFor TO-220FP
3/9
STGP3NB60HD/FP
Output Characteristics
Transfer Characteristics
Transconductance
Collector-Emitter On Voltage vs Temperature
Collector-Emitter On Voltage vs Collector Current
Gate Threshold vs Temperature
4/9
STGP3NB60HD/FP
Normalized Breakdown Voltage vs Temperature
CapacitanceVariations
Gate Charge vs Gate-EmitterVoltage
Total Switching Losses vs Gate Resistance
Total Switching Losses vs Temperature
Total Switching Losses vs Collector Current
5/9
STGP3NB60HD/FP
Switching Off Safe Operating Area
Diode Forward Voltage
Fig. 1:
Fig. 2:
Test Circuit For Inductive Load Switching
Gate Charge test Circuit
Fig. 3: Switching Waveforms
6/9
STGP3NB60HD/FP
TO-220 MECHANICAL DATA
mm
inch
DIM.
MIN.
4.40
1.23
2.40
TYP.
MAX.
4.60
1.32
2.72
MIN.
0.173
0.048
0.094
TYP.
MAX.
0.181
0.051
0.107
A
C
D
D1
E
1.27
0.050
0.49
0.61
1.14
1.14
4.95
2.4
0.70
0.88
1.70
1.70
5.15
2.7
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.027
0.034
0.067
0.067
0.203
0.106
0.409
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
10.0
10.40
16.4
0.645
13.0
2.65
15.25
6.2
14.0
2.95
15.75
6.6
0.511
0.104
0.600
0.244
0.137
0.147
0.551
0.116
0.620
0.260
0.154
0.151
3.5
3.93
3.85
3.75
L2
Dia.
L5
L9
L7
L6
L4
P011C
7/9
STGP3NB60HD/FP
TO-220FP MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
4.6
2.7
2.75
0.7
1
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
4.4
2.5
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.7
1.7
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L6
L7
Ø
16
0.630
28.6
9.8
15.9
9
30.6
10.6
16.4
9.3
1.126
0.385
0.626
0.354
0.118
1.204
0.417
0.645
0.366
0.126
3
3.2
L3
L6
L7
¯
1 2 3
L4
L2
8/9
STGP3NB60HD/FP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parites which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specificationmentioned in this publication are
subject tochange without notice. This publication supersedes and replaces all informaiton previouslysupplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systemswithout express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
1999 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco -
Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
.
9/9
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