STGW30N90D [STMICROELECTRONICS]
N-channel 900V - 30A - TO-247 Very fast PowerMESH IGBT; N沟道900V - 30A - TO- 247非常快的PowerMESH IGBT
| 型号： | STGW30N90D |
| 厂家： | 
ST |
| 描述： | N-channel 900V - 30A - TO-247 Very fast PowerMESH IGBT |
| 文件： | 总10页 (文件大小：160K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STGW30N90D
N-channel 900V - 30A - TO-247
Very fast PowerMESH™ IGBT
Preliminary Data
Features
IC
VCE(sat)
@25°C
Type
VCES
@100°C
STGW30N90D
■ Low on-losses
900V
< 2.75V
30A
■ Low on-voltage drop (V
■ High current capability
)
cesat
TO-247
■ High input impedance (voltage driven)
■ Low gate charge
■ Ideal for soft switching application
Description
Figure 1.
Internal schematic diagram
Using the latest high voltage technology based on
its patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, with
outstanding performances.
Application
■ Induction heating
Table 1.
Order code
STGW30N90D
Device summary
Marking
Package
TO-247
Packaging
GW30N90D
Tube
July 2007
Rev 1
1/10
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
www.st.com
10
Contents
STGW30N90D
Contents
1
2
3
4
5
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2/10
STGW30N90D
Electrical ratings
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
V
VCES
Collector-emitter voltage (VGS = 0)
Collector current (continuous) at 25°C
Collector current (continuous) at 100°C
Collector current (pulsed)
900
60
(1)
A
IC
(1)
30
A
IC
(2)
135
25
A
V
ICL
VGE
PTOT
If
Gate-emitter voltage
Total dissipation at TC = 25°C
Diode RMS forward current at TC = 25°C
220
30
W
A
Tj
Operating junction temperature
Storage temperature
–55 to 150
°C
Tstg
1. Calculated according to the iterative formula:
T
– T
JMAX
C
I
(T ) = ------------------------------------------------------------------------------------------------------
C
C
R
× V
(T , I )
C C
THJ – C
CESAT(MAX)
2. Vclamp=900V, Tj=125°C, RG=10Ω, VGE=15V
Table 3.
Thermal resistance
Parameter
Symbol
Value
Unit
Rthj-case Thermal resistance junction-case
0.57
1.6
50
°C/W
°C/W
°C/W
Rthj-amb Thermal resistance junction-ambient (diode)
Rthj-amb Thermal resistance junction-ambient (IGBT)
3/10
Electrical characteristics
STGW30N90D
2
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 4.
Static electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Collector-emitter
breakdown voltage
VBR(CES)
IC = 1mA, VGE = 0
900
V
VGE= 15V, IC= 20A, Tj= 25°C
2.2
2.0
2.75
5.75
V
V
Collector-emitter saturation
voltage
VCE(SAT)
VGE(th)
ICES
V
GE= 15V, IC= 20A, Tj=125°C
VCE= VGE, IC= 250µA
GE =Max rating,Tc=25°C
Gate threshold voltage
3.75
V
V
500
10
µA
Collector-emitter leakage
current (VCE = 0)
VGE =Max rating, Tc=125°C
mA
Gate-emitter leakage
current (VCE = 0)
IGES
gfs
VGE = 20V, VCE = 0
100 nA
S
VCE = 25V IC= 20A
Forward transconductance
14
,
Table 5.
Dynamic electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Input capacitance
Cies
Coes
Cres
2510
175
30
pF
pF
pF
Output capacitance
VCE = 25V, f = 1 MHz, VGE=0
Reverse transfer
capacitance
Qg
Qge
Qgc
Total gate charge
110 120
nC
nC
nC
VCE = 900V,
Gate-emitter charge
Gate-collector charge
16
49
IC= 20A,VGE=15V
4/10
STGW30N90D
Electrical characteristics
Table 6.
Switching on/off (inductive load)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
td(on)
tr
VCC = 900V, IC = 20A
Turn-on delay time
Current rise time
29
11
ns
ns
RG= 10Ω, VGE= 15V,
Turn-on current slope
1820
A/µs
Tj=25°C (see Figure 2)
(di/dt)on
td(on)
tr
VCC = 900V, IC = 20A
RG= 10Ω, VGE= 15V,
Tj= 125°C (see Figure 2)
Turn-on delay time
Current rise time
27
14
ns
ns
Turn-on current slope
1580
A/µs
(di/dt)on
tr(Voff)
VCC = 900V, IC = 20A
RG= 10Ω, VGE= 15V,
Tj= 25°C (see Figure 2)
Off voltage rise time
Turn-off delay time
Current fall time
90
ns
ns
ns
td(off
tf
tr(Voff)
td(off
tf
)
275
312
VCC = 900V, IC = 20A
RG= 10Ω, VGE= 15V,
Tj= 125°C (see Figure 2)
Off voltage rise time
Turn-off delay time
Current fall time
150
336
592
ns
ns
ns
)
Table 7.
Switching energy (inductive load)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Eon (1)
V
CC = 900V, IC = 20A
Turn-on switching losses
Turn-off switching losses
Total switching losses
1660
4438
6096
µJ
µJ
µJ
(2)
RG= 10Ω, VGE= 15V,
Eoff
Tj= 25°C (see Figure 2)
Ets
Eon (1)
VCC = 900V, IC = 20A
RG= 10Ω, VGE= 15V,
Tj= 125°C (see Figure 2)
Turn-on switching losses
Turn-off switching losses
Total switching losses
3015
6900
9915
µJ
µJ
µJ
(2)
Eoff
Ets
1. Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in
a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25°C and 125°C)
2. Turn-off losses include also the tail of the collector current
Table 8.
Collector-emitter diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
If = 20A, Tj = 25°C
If = 20A, Tj = 125°C
1.9
1.7
2.5
V
V
Vf
Forward on-voltage
trr
If = 20A, VR = 27V,
Tj = 125°C, di/dt = 100A/µs
(see Figure 5)
Reverse recovery time
Reverse recovery charge
Reverse recovery current
152
722
9
ns
nC
A
Qrr
Irrm
5/10
Test circuit
STGW30N90D
3
Test circuit
Figure 2. Test circuit for inductive load
switching
Figure 3. Gate charge test circuit
Figure 4. Switching waveform
Figure 5. Diode recovery time waveform
6/10
STGW30N90D
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
7/10
Package mechanical data
STGW30N90D
TO-247 MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
4.85
2.20
1.0
TYP
MAX.
5.15
MIN.
0.19
MAX.
0.20
A
A1
b
2.60
0.086
0.039
0.079
0.118
0.015
0.781
0.608
0.102
0.055
0.094
0.134
0.03
1.40
b1
b2
c
2.0
2.40
3.0
3.40
0.40
19.85
15.45
0.80
D
20.15
15.75
0.793
0.620
E
e
5.45
18.50
5.50
0.214
0.728
0.216
L
14.20
3.70
14.80
4.30
0.560
0.14
0.582
0.17
L1
L2
øP
øR
S
3.55
4.50
3.65
5.50
0.140
0.177
0.143
0.216
8/10
STGW30N90D
Revision history
5
Revision history
Table 9.
Date
19-Jul-2006
Revision history
Revision
Changes
1
First issue.
9/10
STGW30N90D
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