STH240N75F3-6 [STMICROELECTRONICS]
Conduction losses reduced;
| 型号： | STH240N75F3-6 |
| 厂家： | 
ST |
| 描述： | Conduction losses reduced 开关 脉冲 晶体管 |
| 文件： | 总18页 (文件大小：878K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STH240N75F3-2, STH240N75F3-6
N-channel 75 V, 2.6 mΩ typ., 180 A STripFET™ III Power MOSFET
in H²PAK-2 and H²PAK-6 packages
Datasheet − production data
Features
RDS(on)
max.
Order code
VDSS
ID
TAB
STH240N75F3-2
STH240N75F3-6
75 V
< 3.0 mΩ
180 A
7
■ Conduction losses reduced
1
■ Low profile, very low parasitic inductance
H2PAK-6
H2PAK-2
Applications
■ Switching application
Description
Figure 1.
Internal schematic diagram
These devices are N-channel enhancement mode
Power MOSFETs produced using
STMicroelectronics’ STripFET™ III technology,
which is specifically designed to minimize on-
resistance and gate charge to provide superior
switching performance.
D(TAB)
D(TAB)
G(1)
G(1)
S(2, 3)
S(2, 3, 4, 5, 6, 7)
2
2
H PAK-6
H PAK-2
AM14551V1
Table 1.
Device summary
Order code
Marking
Package
Packaging
STH240N75F3-2
STH240N75F3-6
H2PAK-2
H2PAK-6
240N75F3
Tape and reel
July 2012
Doc ID 18486 Rev 2
1/18
This is information on a product in full production.
www.st.com
18
Contents
STH240N75F3-2, STH240N75F3-6
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
6
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/18
Doc ID 18486 Rev 2
STH240N75F3-2, STH240N75F3-6
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Drain-source voltage
Value
Unit
VDS
VGS
75
20
V
V
Gate-source voltage
(1)
ID
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
180
170
720
300
2
A
ID
A
(2)
IDM
A
PTOT
Total dissipation at TC = 25 °C
Derating factor
W
W/°C
mJ
(3)
EAS
Single pulse avalanche energy
Storage temperature
600
Tstg
Tj
-55 to 175
°C
Operating junction temperature
1. Current limited by package.
2. Pulse width limited by safe operating area.
3. Starting Tj = 25 °C, I = 60 A, V = 15 V.
D
DD
Table 3.
Symbol
Thermal data
Parameter
Value
Unit
Rthj-case Thermal resistance junction-case max
0.5
35
°C/W
°C/W
(1)
Rthj-pcb
Thermal resistance junction-pcb max
1. When mounted on 1 inch2 FR-4 2 oz Cu.
Doc ID 18486 Rev 2
3/18
Electrical characteristics
STH240N75F3-2, STH240N75F3-6
2
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 4.
Symbol
On /off states
Parameter
Test conditions
Min.
Typ.
Max. Unit
Drain-source
breakdown voltage
V(BR)DSS
ID = 250 µA, VGS= 0
VDS = 75 V,
75
V
10
µA
µA
Zero gate voltage
drain current
IDSS
VDS = 75 V, TC =125 °C,
VGS= 0
100
Gate body leakage
current
IGSS
VDS
=
20 V, VDS = 0
200 nA
VGS(th)
RDS(on)
Gate threshold voltage VDS= VGS, ID = 250 µA
Static drain-source on-
2
4
V
V
GS= 10 V, ID= 90 A
2.6
3.0
mΩ
resistance
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min.
Typ.
Max. Unit
Input capacitance
Output capacitance
Ciss
Coss
Crss
6800
1100
50
pF
VDS = 25 V, f = 1 MHz, VGS =0
VDD= 37.5 V, ID= 120 A,
-
-
-
pF
pF
Reverse transfer
capacitance
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
87
30
26
nC
nC
nC
VGS= 10 V
-
(see Figure 14)
Table 6.
Symbol
Switching times
Parameter
Test conditions
Min.
Typ.
Max. Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
25
70
ns
-
-
VDD = 37.5 V, ID = 60 A
RG= 4.7 Ω, VGS= 10 V,
(see Figure 13)
ns
Turn-off delay time
Fall time
100
15
ns
-
-
ns
4/18
Doc ID 18486 Rev 2
STH240N75F3-2, STH240N75F3-6
Electrical characteristics
Min. Typ. Max. Unit
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
ISD
Source-drain current
180
720
A
A
-
-
(1)
ISD
Source-drain current (pulsed)
(2)
VSD
Forward on voltage
ISD = 120 A, VGS = 0
1.5
V
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 120 A,di/dt = 100 A/µs
VDD = 30 V, Tj = 150 °C
(see Figure 15)
80
180
4.5
ns
nC
A
Qrr
-
IRRM
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Doc ID 18486 Rev 2
5/18
Electrical characteristics
STH240N75F3-2, STH240N75F3-6
Thermal impedance
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
AM08147v1
I
D
(A)
100
100µs
10
1ms
10ms
1
Tj=175°C
Tc=25°C
Single pulse
0.1
10
VDS(V)
0.1
1
Figure 4.
Output characteristics
Figure 5.
Transfer characteristics
AM05545v1
(6ꢃꢂꢂꢁꢁ
)$
ꢄ!ꢅ
ID(A)
VGS=10V
350
300
6$3 ꢉ ꢁ6
ꢃꢂꢂ
ꢈꢁꢂ
ꢈꢂꢂ
ꢆꢁꢂ
ꢆꢂꢂ
6V
250
200
150
ꢀꢁꢂ
ꢀꢂꢂ
100
5V
50
0
ꢁꢂ
ꢂ
ꢂ
ꢆ
3
4
5
VDS(V)
6'3ꢄ6ꢅ
0
1
2
ꢃ
ꢇ
ꢊ
Figure 6.
Normalized BVDSS vs temperature Figure 7.
Static drain-source on-resistance
AM08148v1
R
DS(on)
(mΩ)
VGS=10V
2.90
2.80
2.70
2.60
2.50
2.40
20 40 60 80 100 120 140 160 180
ID(A)
0
6/18
Doc ID 18486 Rev 2
STH240N75F3-2, STH240N75F3-6
Electrical characteristics
Figure 8.
Gate charge vs gate-source voltage Figure 9.
Capacitance variations
Figure 10. Normalized gate threshold voltage Figure 11. Normalized on-resistance vs
vs temperature
temperature
Figure 12. Source-drain diode forward
characteristics
Doc ID 18486 Rev 2
7/18
Test circuits
STH240N75F3-2, STH240N75F3-6
3
Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
VDD
12V
47kΩ
100nF
1kΩ
2200
3.3
µF
RL
µF
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
D.U.T.
VD
RG
VGS
2200
µF
D.U.T.
VG
2.7kΩ
47kΩ
PW
1kΩ
PW
AM01468v1
AM01469v1
Figure 15. Test circuit for inductive load
switching and diode recovery times
Figure 16. Unclamped inductive load test
circuit
L
A
A
A
B
D
FAST
DIODE
L=100µH
VD
G
2200
µF
D.U.T.
B
3.3
µF
VDD
S
3.3
µF
1000
µF
B
VDD
25
Ω
ID
D
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 17. Unclamped inductive waveform
Figure 18. Switching time waveform
ton
toff
tdoff
V(BR)DSS
tr
tf
tdon
VD
90%
10%
90%
IDM
10%
VDS
ID
0
0
VDD
VDD
90%
VGS
10%
AM01472v1
AM01473v1
8/18
Doc ID 18486 Rev 2
STH240N75F3-2, STH240N75F3-6
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Table 8.
Dim.
H²PAK-2 mechanical data
mm
Min.
Typ.
Max.
A
A1
C
4.30
0.03
1.17
4.98
0.50
0.78
10.00
7.40
15.30
1.27
4.93
6.85
1.5
4.80
0.20
1.37
5.18
0.90
0.85
10.40
7.80
15.80
1.40
5.23
7.25
1.7
e
E
F
H
H1
L
-
L1
L2
L3
L4
M
R
2.6
2.9
0.20
0°
0.60
8°
V
Doc ID 18486 Rev 2
9/18
Package mechanical data
Figure 19. H²PAK-2 drawing
STH240N75F3-2, STH240N75F3-6
8159712_C
10/18
Doc ID 18486 Rev 2
STH240N75F3-2, STH240N75F3-6
Package mechanical data
Figure 20. H²PAK-2 recommended footprint (dimensions in mm)
footprint_Rev_E
Doc ID 18486 Rev 2
11/18
Package mechanical data
Table 9. H²PAK-6 mechanical data
Dim.
STH240N75F3-2, STH240N75F3-6
mm
Min.
Typ.
Max.
A
A1
C
4.30
0.03
1.17
2.34
4.88
7.42
0.45
0.50
10.00
7.40
14.75
1.27
4.35
6.85
1.5
4.80
0.20
1.37
2.74
5.28
7.82
0.60
0.70
10.40
7.80
15.25
1.40
4.95
7.25
1.75
2.50
0.60
8°
e
e1
e2
E
F
H
-
H1
L
L1
L2
L3
L4
M
R
1.90
0.20
0°
V
12/18
Doc ID 18486 Rev 2
STH240N75F3-2, STH240N75F3-6
Figure 21. H²PAK-6 drawing
Package mechanical data
8159693_Rev_E
Doc ID 18486 Rev 2
13/18
Package mechanical data
STH240N75F3-2, STH240N75F3-6
Figure 22. H²PAK-6 recommended footprint (dimensions in mm)
footprint_Rev_E
14/18
Doc ID 18486 Rev 2
STH240N75F3-2, STH240N75F3-6
Packaging mechanical data
5
Packaging mechanical data
Table 10. H²PAK-2 and H²PAK-6 tape and reel mechanical data
Tape Reel
mm
mm
Dim.
Dim.
Min.
Max.
Min.
Max.
A0
B0
D
10.5
15.7
1.5
10.7
15.9
1.6
A
B
C
D
G
N
T
330
1.5
12.8
20.2
24.4
100
13.2
26.4
30.4
D1
E
1.59
1.65
11.4
4.8
1.61
1.85
11.6
5.0
F
K0
P0
P1
P2
R
3.9
4.1
11.9
1.9
12.1
2.1
Base qty
Bulk qty
1000
1000
50
T
0.25
23.7
0.35
24.3
W
Doc ID 18486 Rev 2
15/18
Packaging mechanical data
Figure 23. Tape
STH240N75F3-2, STH240N75F3-6
10 pitches cumulative
tolerance on tape +/- 0.2 mm
P0
D
P2
Top cover
tape
T
E
F
W
K0
B0
A0
D1
P1
User direction of feed
R
Bending radius
User direction of feed
AM08852v2
Figure 24. Reel
T
REEL DIMENSIONS
40mm min.
Access hole
At sl ot location
B
D
C
N
A
G measured at hub
Full radius
Tape slot
in core for
tape start 25 mm min.
width
AM08851v2
16/18
Doc ID 18486 Rev 2
STH240N75F3-2, STH240N75F3-6
Revision history
6
Revision history
Table 11. Document revision history
Date
Revision
Changes
19-Oct-2011
1
Initial release.
Added new device in H²PAK-2.
Table 1: Device summary has been modified accordingly.
Table 8: H²PAK-2 mechanical data, Figure 19: H²PAK-2 drawing and
Figure 20: H²PAK-2 recommended footprint (dimensions in mm)
have been added.
02-Jul-2012
2
Minor text changes.
Doc ID 18486 Rev 2
17/18
STH240N75F3-2, STH240N75F3-6
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18/18
Doc ID 18486 Rev 2
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