STL15N3LLH5 [STMICROELECTRONICS]
N-channel 30 V, 0.0045 Ω, 15 A, PowerFLAT™ (3.3 x 3.3) STripFET™ V Power MOSFET; N沟道30 V ， 0.0045 Ω ， 15 A ， PowerFLAT ™ （ 3.3× 3.3 ）的STripFET ™ V功率MOSFET
| 型号： | STL15N3LLH5 |
| 厂家： | 
ST |
| 描述： | N-channel 30 V, 0.0045 Ω, 15 A, PowerFLAT™ (3.3 x 3.3) STripFET™ V Power MOSFET |
| 文件： | 总10页 (文件大小：157K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STL15N3LLH5
N-channel 30 V, 0.0045 Ω, 15 A, PowerFLAT™ (3.3 x 3.3)
STripFET™ V Power MOSFET
Preliminary Data
Features
Type
VDSS
RDS(on)
ID
STL15N3LLH5
30V
<0.0054Ω 15A (1)
1. The value is rated according Rthj-pcb
■ R
* Q industry benchmark
DS(on)
g
■ Extremely low on-resistance R
DS(on)
■ Very low switching gate charge
■ High avalanche ruggedness
■ Low gate drive power losses
PowerFLAT™(3.3x3.3)
(Chip scale package)
Applications
■ Switching applications
Figure 1.
Internal schematic diagram
Description
th
This product utilizes the 5 generation of design
rules of ST’s proprietary STripFET™ technology.
The lowest available R
*Q , in this chip scale
DS(on)
g
package, makes this device suitable for the most
demanding DC-DC converter applications, where
high power density is to be achieved.
Table 1.
Device summary
Order code
STL15N3LLH5
Marking
Package
Packaging
15N3LLH5
PowerFLAT™ (3.3 x 3.3)
Tape and reel
August 2008
Rev 1
1/10
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
www.st.com
10
Contents
STL15N3LLH5
Contents
1
2
3
4
5
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2/10
STL15N3LLH5
Electrical ratings
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
30
22
Unit
VDS
VGS
Drain-source voltage (VGS = 0)
Gate-source voltage
V
V
(1)
ID
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC=100 °C
Drain current (pulsed)
15
9.3
60
50
2
A
(1)
ID
A
(2)
IDM
A
(3)
PTOT
Total dissipation at TC = 25 °C
Total dissipation at TC = 25 °C
Derating factor
W
(1)
PTOT
W
0.4
W/°C
TJ
Operating junction temperature
storage temperature
-55 to 150
°C
Tstg
1. The value is rated according Rthj-pcb
2. Pulse width limited by safe operating area.
3. The vaule is rated according Rthj-c
Table 3.
Thermal resistance
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case (drain)
Thermal resistance junction-pcb
Thermal resistance junction-pcb
2.5
°C/W
°C/W
°C/W
(1)
Rthj-pcb
42.8
63.5
(2)
Rthj-pcb
1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10sec
2. Steady state
3/10
Electrical characteristics
STL15N3LLH5
2
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 4.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Drain-source breakdown
voltage
V(BR)DSS
ID = 250 µA, VGS= 0
30
V
V
DS = Max rating,
1
µA
µA
Zero gate voltage drain
current (VGS = 0)
IDSS
VDS = Max rating @125 °C
10
Gate body leakage current
(VDS = 0)
IGSS
VGS
=
22 V
±100
nA
V
VGS(th)
RDS(on)
VDS= VGS, ID = 250 µA
Gate threshold voltage
1
2.5
VGS= 10 V, ID= 7.5 A
VGS= 4.5 V, ID= 7.5 A
0.0045 0.0054
0.006 0.0075
Ω
Ω
Static drain-source on
resistance
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min. Typ.
Max.
Unit
Ciss
Coss
Crss
Input capacitance
1500
295
39
pF
pF
pF
VDS =25 V, f=1 MHz,
VGS=0
Output capacitance
Reverse transfer
capacitance
Qg
Qgs
Qgd
VDD=15 V, ID = 15 A
VGS =4.5 V
Total gate charge
Gate-source charge
Gate-drain charge
12
4
nC
nC
nC
4.7
(see Figure 3)
f=1 MHz Gate DC Bias = 0
Test signal level = 20 mV
Open drain
RG
Gate input resistance
0.5
1.5
2.5
Ω
4/10
STL15N3LLH5
Electrical characteristics
Table 6.
Switching times
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
9.3
14.5
22.7
4.5
ns
ns
ns
ns
VDD=15 V, ID= 7.5 A,
RG=4.7 Ω, VGS=4.5 V
(see Figure 2)
Turn-off delay time
Fall time
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
Source-drain current
15
60
A
A
V
(1)
Source-drain current (pulsed)
Forward on voltage
ISDM
(2)
ISD=15 A, VGS=0
ISD=15 A,
1.1
VSD
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
25
17.5
1.4
ns
nC
A
di/dt = 100 A/µs,
Qrr
VDD=20 V, Tj=150 °C
IRRM
(see Figure 7)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
5/10
Test circuit
STL15N3LLH5
3
Test circuit
Figure 2. Switching times test circuit for
resistive load
Figure 3. Gate charge test circuit
Figure 4. Test circuit for inductive load
switching and diode recovery times
Figure 5. Unclamped inductive load test
circuit
Figure 6. Unclamped inductive waveform
Figure 7. Switching time waveform
6/10
STL15N3LLH5
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
7/10
Package mechanical data
STL15N3LLH5
PowerFLAT™ ( 3.3 x 3.3) mechanical data
mm
inch
Typ
Dim
Min
Typ
Max
Min
Max
A
A3
b
0.950
1.000
0.037
0.039
0.200
0.34
0.008
0.013
0.123
0.090
0.123
0.067
0.025
0.0157
0.0196
0.29
3.200
2.24
0.39
3.400
2.34
0.011
0.126
0.088
0.086
0.065
0.015
0.134
0.092
0.1338
0.069
D
3.300
2.29
D2
E
2.20
3.30
3.40
E2
e
1.660
1.710
0.650
0.40
1.760
L
L1
0.45
0.50
0.55
0.017
0.021
8/10
STL15N3LLH5
Revision history
5
Revision history
Table 8.
Date
25-Aug-2008
Document revision history
Revision
Changes
1
First release
9/10
STL15N3LLH5
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10/10
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