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STL72 [STMICROELECTRONICS]

MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR; 中压快速开关NPN功率晶体管
STL72
型号： STL72
厂家： ST    ST
描述：

MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
中压快速开关NPN功率晶体管

晶体 开关 晶体管
文件： 总6页 (文件大小：146K)
中文：  中文翻译
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STL72  
MEDIUM VOLTAGE FAST-SWITCHING  
NPN POWER TRANSISTOR  
n
n
n
MEDIUM VOLTAGE CAPABILITY  
Figure 1: Package  
LOW SPREAD OF DYNAMIC PARAMETERS  
MINIMUM LOT-TO-LOT SPREAD FOR  
RELIABLE OPERATION  
n
VERY HIGH SWITCHING SPEED  
APPLICATIONS  
n
ELECTRONIC BALLASTS FOR  
FLUORESCENT LIGHTING  
TO-92  
DESCRIPTION  
Figure 2: Internal Schematic Diagram  
The device is manufactured using high voltage  
Multi-Epitaxial Planar technology for high  
switching speeds and medium voltage capability.  
It uses a Cellular Emitter structure with planar  
edge termination to enhance switching speeds  
while maintaining the wide RBSOA.  
The STL series is designed for use in Compact  
Fluorescent Lamps.  
Table 1: Order Codes  
Part Number  
Marking  
Package  
Packaging  
L72 L  
STL72  
TO-92  
Bulk  
or (#)  
L72 H  
# See:note on page 2  
Rev. 2  
July 2005  
1/6  
STL72  
Table 2: Absolute Maximum Ratings  
Symbol  
Parameter  
Value  
Unit  
V
Collector-Emitter Voltage (V = 0)  
700  
400  
V
V
CES  
BE  
V
Collector-Emitter Voltage (I = 0)  
CEO  
B
V
Emitter-Base Voltage (I = 0)  
9
V
EBO  
C
I
Collector Current  
1
A
C
I
Collector Peak Current (t < 5ms)  
2
A
CM  
p
I
Base Current  
0.5  
A
B
I
Base Peak Current (t < 5ms)  
1
1
A
BM  
p
o
P
W
°C  
°C  
Total Dissipation at T = 25 C  
tot  
C
T
T
Storage Temperature  
Max. Operating Junction Temperature  
-65 to 150  
150  
stg  
J
Table 3: Thermal Data  
o
R
Thermal Resistance Junction-Ambient  
Max  
120  
thj-amb  
C/W  
o
Table 4: Electrical Characteristics (T  
= 25 C unless otherwise specified)  
case  
Symbol  
Parameter  
Collector Cut-off Current V = 700 V  
(V = -1.5 V)  
Test Conditions  
Min.  
Typ.  
Max.  
1
5
Unit  
mA  
mA  
I
CEV  
CE  
o
BE  
V
V
= 700 V  
= 9 V  
T = 125 C  
CE  
EB  
j
I
Emitter-Cut-off Current  
1
mA  
EBO  
(I = 0 )  
C
V
* Collector-Emitter  
I
= 1 mA  
L = 25 mH  
400  
V
CEO(sus)  
C
Sustaining Voltage  
(I = 0 )  
B
V
*
Collector-Emitter  
Saturation Voltage  
I
I
= 0.2 A  
= 0.4 A  
I = 40 mA  
0.15  
0.25  
0.4  
0.5  
V
V
CE(sat)  
C
B
I = 80 mA  
C
B
V
*
Base-Emitter Saturation I = 0.4 A  
I = 80 mA  
0.95  
1.1  
V
BE(sat)  
C
B
Voltage  
h
DC Current Gain #  
I
= 0.4 A  
V
= 5 V  
FE  
C
CE  
10  
15  
5
16  
23  
15  
Group L  
Group H  
I
I
I
= 1 A  
= 0.25  
V
= 10 V  
C
C
CE  
INDUCTIVE LOAD  
Fall Time  
V
= 300 V  
Clamp  
t
0.3  
µs  
= -I = 50 mA  
L = 3mH  
f
B1  
B2  
(see figure 3)  
* Pulsed: Pulsed duration = 300 ms, duty cycle ≤ 1.5 %.  
# The product is pre-selected in DC current gain (Group L and Group H). STMicroelectronics reserves the right to ship either groups accord-  
ing to production availability. Please contact your nearest STMicrolectronics sales office for delivery datails.  
2/6  
STL72  
Figure 3: Inductive Load Switching Test Circuit  
1) Fast electronic switch  
2) Non-inductive Resistor  
3) Fast recovery rectifier  
Figure 4: Restistive Load Switching Test Circuit  
1) Fast electronic switch  
2) Non-inductive Resistor  
3/6  
STL72  
TO-92 BULK SHIPMENT MECHANICAL DATA  
mm.  
DIM.  
MIN.  
4.32  
0.36  
4.45  
3.30  
2.41  
1.14  
12.70  
2.16  
0.92  
0.41  
TYP  
MAX.  
4.95  
0.51  
4.95  
3.94  
2.67  
1.40  
15.49  
2.41  
1.52  
0.56  
A
b
D
E
e
e1  
L
R
S1  
W
V
5 O  
0102782 C  
4/6  
STL72  
Figure 5: Revision History  
Release Date  
Version  
Change Designator  
01-Apr-2005  
12-Jul-2005  
1
2
Initial release  
New hfe range values  
5/6  
STL72  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted  
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject  
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not  
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
The ST logo is a registered trademark of STMicroelectronics  
All other names are the property of their respective owners  
© 2005 STMicroelectronics - All Rights Reserved  
STMicroelectronics group of companies  
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -  
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America  
www.st.com  
6/6  

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