STM32F101T4U6 [STMICROELECTRONICS]
IC,MICROCONTROLLER,32-BIT,CORTEX-M3 CPU,CMOS,LLCC,36PIN,PLASTIC;型号: | STM32F101T4U6 |
厂家: | ST |
描述: | IC,MICROCONTROLLER,32-BIT,CORTEX-M3 CPU,CMOS,LLCC,36PIN,PLASTIC |
文件: | 总79页 (文件大小:1110K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
STM32F101x4
STM32F101x6
Low-density access line, ARM-based 32-bit MCU with
16 or 32 KB Flash, 5 timers, ADC and 4 communication interfaces
Features
■ Core: ARM 32-bit Cortex™-M3 CPU
– 36 MHz maximum frequency,
1.25 DMIPS/MHz (Dhrystone 2.1)
LQFP64
10 x 10 mm
LQFP48
7 x 7 mm
VFQFPN48
7 × 7 mm
VFQFPN36
6 × 6 mm
performance at 0 wait state memory
access
– Single-cycle multiplication and hardware
division
■
Up to 5 timers
–
Up to two16-bit timers, each with up to 4
IC/OC/PWM or pulse counter
■ Memories
– 2 watchdog timers (Independent and
Window)
– 16 to 32 Kbytes of Flash memory
– 4 to 6 Kbytes of SRAM
– SysTick timer: 24-bit downcounter
■ Clock, reset and supply management
■ Up to 4 communication interfaces
– 2.0 to 3.6 V application supply and I/Os
– POR, PDR and programmable voltage
detector (PVD)
– 4-to-16 MHz crystal oscillator
– Internal 8 MHz factory-trimmed RC
– Internal 40 kHz RC
2
– 1 x I C interface (SMBus/PMBus)
– Up to 2 USARTs (ISO 7816 interface, LIN,
IrDA capability, modem control)
– 1 × SPI (18 Mbit/s)
■ CRC calculation unit, 96-bit unique ID
– PLL for CPU clock
– 32 kHz oscillator for RTC with calibration
®
■ ECOPACK packages
Table 1.
Device summary
Part number
STM32F101C4,
■ Low power
– Sleep, Stop and Standby modes
Reference
– V
supply for RTC and backup registers
BAT
STM32F101x4
STM32F101R4,
STM32F101T4
■ Debug mode
– Serial wire debug (SWD) and JTAG
interfaces
STM32F101C6,
STM32F101R6,
STM32F101T6
STM32F101x6
■ DMA
– 7-channel DMA controller
– Peripherals supported: timers, ADC, SPIs,
2
I Cs and USARTs
■ 1 × 12-bit, 1 µs A/D converter (up to 16
channels)
– Conversion range: 0 to 3.6 V
– Temperature sensor
■ Up to 51 fast I/O ports
– 26/37/51 I/Os, all mappable on 16 external
interrupt vectors and almost all 5 V-tolerant
April 2011
Doc ID 15058 Rev 5
1/79
www.st.com
1
Contents
STM32F101x4, STM32F101x6
Contents
1
2
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2.1
2.2
2.3
Device overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Full compatibility throughout the family . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
®
2.3.1
2.3.2
2.3.3
2.3.4
2.3.5
2.3.6
2.3.7
2.3.8
2.3.9
ARM Cortex™-M3 core with embedded Flash and SRAM . . . . . . . . . 15
Embedded Flash memory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
CRC (cyclic redundancy check) calculation unit . . . . . . . . . . . . . . . . . . 15
Embedded SRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Nested vectored interrupt controller (NVIC) . . . . . . . . . . . . . . . . . . . . . . 15
External interrupt/event controller (EXTI) . . . . . . . . . . . . . . . . . . . . . . . 16
Clocks and startup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Boot modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Power supply schemes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2.3.10 Power supply supervisor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2.3.11 Voltage regulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2.3.12 Low-power modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2.3.13 DMA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2.3.14 RTC (real-time clock) and backup registers . . . . . . . . . . . . . . . . . . . . . . 18
2.3.15 Independent watchdog . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2.3.16 Window watchdog . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2.3.17 SysTick timer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2.3.18 General-purpose timers (TIMx) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
²
2.3.19 I C bus . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
2.3.20 Universal synchronous/asynchronous receiver transmitter (USART) . . 19
2.3.21 Serial peripheral interface (SPI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
2.3.22 GPIOs (general-purpose inputs/outputs) . . . . . . . . . . . . . . . . . . . . . . . . 19
2.3.23 ADC (analog to digital converter) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
2.3.24 Temperature sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
2.3.25 Serial wire JTAG debug port (SWJ-DP) . . . . . . . . . . . . . . . . . . . . . . . . . 20
3
Pinouts and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
2/79
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Contents
4
5
Memory mapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
5.1
Parameter conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
5.1.1
5.1.2
5.1.3
5.1.4
5.1.5
5.1.6
5.1.7
Minimum and maximum values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Typical values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Typical curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Loading capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Power supply scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Current consumption measurement . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
5.2
5.3
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
5.3.1
5.3.2
5.3.3
5.3.4
5.3.5
5.3.6
5.3.7
5.3.8
5.3.9
General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Operating conditions at power-up / power-down . . . . . . . . . . . . . . . . . . 31
Embedded reset and power control block characteristics . . . . . . . . . . . 31
Embedded reference voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Supply current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
External clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Internal clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
PLL characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
5.3.10 EMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
5.3.11 Absolute maximum ratings (electrical sensitivity) . . . . . . . . . . . . . . . . . 50
5.3.12 I/O current injection characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
5.3.13 I/O port characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
5.3.14 NRST pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
5.3.15 TIM timer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
5.3.16 Communications interfaces . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
5.3.17 12-bit ADC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
5.3.18 Temperature sensor characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68
6
Package characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69
6.1
6.2
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74
6.2.1
6.2.2
Reference document . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74
Evaluating the maximum junction temperature for an application . . . . . 75
Doc ID 15058 Rev 5
3/79
Contents
STM32F101x4, STM32F101x6
Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77
7
8
4/79
Doc ID 15058 Rev 5
STM32F101x4, STM32F101x6
List of tables
List of tables
Table 1.
Table 2.
Table 3.
Table 4.
Table 5.
Table 6.
Table 7.
Table 8.
Table 9.
Table 10.
Table 11.
Table 12.
Device summary. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Low-density STM32F101xx device features and peripheral counts . . . . . . . . . . . . . . . . . . 11
STM32F101xx family . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Low-density STM32F101xx pin definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Thermal characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Operating conditions at power-up / power-down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Embedded reset and power control block characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 32
Embedded internal reference voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Maximum current consumption in Run mode, code with data processing
running from Flash . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Maximum current consumption in Run mode, code with data processing
running from RAM. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Maximum current consumption in Sleep mode, code running from Flash
Table 13.
Table 14.
or RAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Typical and maximum current consumptions in Stop and Standby modes . . . . . . . . . . . . 36
Typical current consumption in Run mode, code with data processing
Table 15.
Table 16.
running from Flash . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Typical current consumption in Sleep mode, code running from Flash or RAM. . . . . . . . . 40
Peripheral current consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
High-speed external user clock characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Low-speed external user clock characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
HSE 4-16 MHz oscillator characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Table 17.
Table 18.
Table 19.
Table 20.
Table 21.
Table 22.
Table 23.
Table 24.
Table 25.
Table 26.
Table 27.
Table 28.
Table 29.
Table 30.
Table 31.
Table 32.
Table 33.
Table 34.
Table 35.
Table 36.
Table 37.
Table 38.
Table 39.
Table 40.
Table 41.
Table 42.
Table 43.
Table 44.
LSE oscillator characteristics (f
= 32.768 kHz) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
LSE
HSI oscillator characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
LSI oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Low-power mode wakeup timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
PLL characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Flash memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Flash memory endurance and data retention . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
EMS characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
EMI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
ESD absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
Electrical sensitivities . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
I/O current injection susceptibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
I/O static characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
Output voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
I/O AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
NRST pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
TIMx characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
2
I C characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
SCL frequency (f
= MHz, V = 3.3 V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
PCLK1
DD
SPI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
ADC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
R
max for f
= 14 MHz. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65
AIN
ADC
ADC accuracy - limited test conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65
Doc ID 15058 Rev 5
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List of tables
STM32F101x4, STM32F101x6
Table 45.
Table 46.
Table 47.
Table 48.
Table 49.
Table 50.
Table 51.
Table 52.
Table 53.
ADC accuracy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66
TS characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68
VFQFPN48 7 x 7 mm, 0.5 mm pitch, package mechanical data . . . . . . . . . . . . . . . . . . . . 70
VFQFPN36 6 x 6 mm, 0.5 mm pitch, package mechanical data . . . . . . . . . . . . . . . . . . . . 71
LQFP64 – 10 x 10 mm, 64-pin low-profile quad flat package mechanical data . . . . . . . . . 72
LQFP48 – 7 x 7mm, 48-pin low-profile quad flat package mechanical data. . . . . . . . . . . . 73
Package thermal characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74
Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76
Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77
6/79
Doc ID 15058 Rev 5
STM32F101x4, STM32F101x6
List of figures
List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
STM32F101xx Low-density access line block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Clock tree . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
STM32F101xx Low-density access line LQFP64 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . 21
STM32F101xx Low-density access line LQFP48 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . 21
STM32F101xx Low-density access line VFQPFN48 pinout . . . . . . . . . . . . . . . . . . . . . . . . 22
STM32F101xx Low-density access line VFQPFN36 pinout . . . . . . . . . . . . . . . . . . . . . . . . 22
Memory map. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Pin loading conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Figure 10. Power supply scheme. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Figure 11. Current consumption measurement scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Figure 12. Typical current consumption in Run mode versus frequency (at 3.6 V) -
code with data processing running from RAM, peripherals enabled. . . . . . . . . . . . . . . . . . 35
Figure 13. Typical current consumption in Run mode versus frequency (at 3.6 V) -
code with data processing running from RAM, peripherals disabled . . . . . . . . . . . . . . . . . 35
Figure 14. Typical current consumption on V
with RTC on versus temperature at different
BAT
V
values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
BAT
Figure 15. Typical current consumption in Stop mode with regulator in Run mode versus
temperature at V = 3.3 V and 3.6 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
DD
Figure 16. Typical current consumption in Stop mode with regulator in Low-power mode versus
temperature at V = 3.3 V and 3.6 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
DD
Figure 17. Typical current consumption in Standby mode versus temperature at V = 3.3 V and
DD
3.6 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Figure 18. High-speed external clock source AC timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Figure 19. Low-speed external clock source AC timing diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Figure 20. Typical application with an 8 MHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Figure 21. Typical application with a 32.768 kHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Figure 22. Standard I/O input characteristics - CMOS port . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Figure 23. Standard I/O input characteristics - TTL port . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Figure 24. 5 V tolerant I/O input characteristics - CMOS port . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
Figure 25. 5 V tolerant I/O input characteristics - TTL port . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
Figure 26. I/O AC characteristics definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
Figure 27. Recommended NRST pin protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
2
(1)
Figure 28. I C bus AC waveforms and measurement circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
Figure 29. SPI timing diagram - slave mode and CPHA = 0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
(1)
Figure 30. SPI timing diagram - slave mode and CPHA = 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
Figure 31. SPI timing diagram - master mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63
(1)
Figure 32. ADC accuracy characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66
Figure 33. Typical connection diagram using the ADC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67
Figure 34. Power supply and reference decoupling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67
(1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .70
Figure 35. VFQFPN48 7 x 7 mm, 0.5 mm pitch, package outline
Figure 36. Recommended footprint (dimensions in mm)
Figure 37. VFQFPN36 6 x 6 mm, 0.5 mm pitch, package outline
Figure 38. Recommended footprint (dimensions in mm)
(1)(2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .70
(1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .71
(1)(2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .71
Figure 39. LQFP64 – 10 x 10 mm, 64 pin low-profile quad flat package outline . . . . . . . . . . . . . . . . . 72
(1)
Figure 40. Recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72
Figure 41. LQFP48 – 7 x 7mm, 48-pin low-profile quad flat
package outline. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73
Doc ID 15058 Rev 5
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List of figures
STM32F101x4, STM32F101x6
(1)
Figure 42. Recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73
Figure 43. LQFP64 P max vs. T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75
D
A
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Doc ID 15058 Rev 5
STM32F101x4, STM32F101x6
Introduction
1
Introduction
This datasheet provides the ordering information and mechanical device characteristics of
the STM32F101x4 and STM32F101x6 low-density access line microcontrollers. For more
details on the whole STMicroelectronics STM32F101xx family, please refer to Section 2.2:
Full compatibility throughout the family.
The Low-density STM32F101xx datasheet should be read in conjunction with the low-,
medium- and high-density STM32F10xxx reference manual.
For information on programming, erasing and protection of the internal Flash memory
please refer to the STM32F10xxx Flash programming manual.
The reference and Flash programming manuals are both available from the
STMicroelectronics website www.st.com.
For information on the Cortex™-M3 core please refer to the Cortex™-M3 Technical
Reference Manual, available from the www.arm.com website at the following address:
http://infocenter.arm.com/help/index.jsp?topic=/com.arm.doc.ddi0337e/.
Doc ID 15058 Rev 5
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Description
STM32F101x4, STM32F101x6
2
Description
The STM32F101x4 and STM32F101x6 Low-density access line family incorporates the
high-performance ARM Cortex™-M3 32-bit RISC core operating at a 36 MHz frequency,
high-speed embedded memories (Flash memory of 16 to 32 Kbytes and SRAM of 4 to 6
Kbytes), and an extensive range of enhanced peripherals and I/Os connected to two APB
2
buses. All devices offer standard communication interfaces (one I C, one SPI, and two
USARTs), one 12-bit ADC and up to two general-purpose 16-bit timers.
The STM32F101xx Low-density access line family operates in the –40 to +85 °C
temperature range, from a 2.0 to 3.6 V power supply. A comprehensive set of power-saving
mode allows the design of low-power applications.
The STM32F101xx Low-density access line family includes devices in three different
packages ranging from 36 pins to 64 pins. Depending on the device chosen, different sets of
peripherals are included, the description below gives an overview of the complete range of
peripherals proposed in this family.
These features make the STM32F101xx Low-density access line microcontroller family
suitable for a wide range of applications such as application control and user interface,
medical and handheld equipment, PC peripherals, gaming and GPS platforms, industrial
applications, PLCs, inverters, printers, scanners, alarm systems, Video intercoms, and
HVACs.
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Doc ID 15058 Rev 5
STM32F101x4, STM32F101x6
Description
2.1
Device overview
Figure 1 shows the general block diagram of the device family.
Table 2.
Low-density STM32F101xx device features and peripheral counts
STM32F101Tx STM32F101Cx STM32F101Rx
Peripheral
Flash - Kbytes
SRAM - Kbytes
16
4
32
6
16
4
32
6
16
4
32
6
General-purpose
2
2
2
2
2
2
SPI
I2C
1
1
1
1
1
1
1
1
1
1
1
1
USART
2
2
2
2
2
2
12-bit synchronized ADC
number of channels
1
1
1
10 channels
10 channels
16 channels
GPIOs
26
37
51
CPU frequency
Operating voltage
36 MHz
2.0 to 3.6 V
Ambient temperature: –40 to +85 °C (see Table 8)
Junction temperature: –40 to +105 °C (see Table 8)
Operating temperatures
Packages
LQFP48,
VFQFPN36
LQFP64
VFQFPN48
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Description
STM32F101x4, STM32F101x6
Figure 1.
STM32F101xx Low-density access line block diagram
TRACECLK
TRACED[0:3]
as AS
TPIU
Trace
controller
Trace/trig
pbus
POWER
SW/JTAG
NJTRST
JTDI
JTCK/SWCLK
JTMS/SWDIO
V
= 2 to 3.6 V
DD
VSS
VOLT. REG.
3.3V TO 1.8V
Ibus
Cortex M3 CPU
Flash 32 KB
64 bit
JTDO
as AF
@VDD
Fmax: 3 6M Hz
Dbus
NVIC
SRAM
6 KB
NVIC
System
@VDD
OSC_IN
OSC_OUT
PCLK1
PCLK2
HCLK
FCLK
PLL &
XTAL OSC
4-16 MHz
GP DMA
CLOCK
MANAGT
7 channels
RC 8 MHz
RC 42 kHz
@VDDA
IWDG
@VDDA
Stand by
interface
SUPPLY
SUPERVISION
VBAT
NRST
VDDA
VSSA
@VBAT
Rst
POR / PDR
OSC32_IN
OSC32_OUT
XTAL 32 kHz
Backup
Int
PVD
RTC
AWU
AHB2
APB2
AHB2
APB1
TAMPER-RTC
reg
Backu p interface
EXTI
80AF
WAKEUP
4 Channels
4 Channels
TIM2
PA[15:0]
PB[15:0]
PC[15:0]
PD[3:0]
GPIOA
GPIOB
GPIOC
GPIOD
TIM3
RX,TX, CTS, RTS,
CK, SmartCard as AF
USART2
I2C
SCL,SDA,SMBA
as AF
W W D G
MOSI,MISO,
SCK,NSS as AF
SPI
RX,TX, CTS, RTS,
Smartcard as AF
USART1
@VDDA
12bit ADC
IF
16AF
Temp sensor
ai15173c
1. AF = alternate function on I/O port pin.
2. TA = –40 °C to +85 °C (junction temperature up to 105 °C).
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Doc ID 15058 Rev 5
STM32F101x4, STM32F101x6
Figure 2. Clock tree
Description
8 MHz
HSI RC
HSI
/2
HCLK
36 MHz max
Clock
to AHB bus, core,
memory and DMA
Enable (3 bits)
to Cortex System timer
/8
SW
PLLSRC
FCLK Cortex
free running clock
36 MHz max
PLLMUL
HSI
AHB
Prescaler
/1, 2..512
APB1
Prescaler
/1, 2, 4, 8, 16
SYSCLK
..., x16
x2, x3, x4
PLL
PCLK1
PLLCLK
HSE
36 MHz
max
to APB1
peripherals
Peripheral Clock
Enable (13 bits)
to TIM2, TIM3
TIMXCLK
Peripheral Clock
Enable (3 bits)
TIM2, TIM3
If (APB1 prescaler =1) x1
else x2
CSS
APB2
Prescaler
/1, 2, 4, 8, 16
PLLXTPRE
/2
36 MHz max
PCLK2
to APB2
OSC_OUT
peripherals
4-16 MHz
HSE OSC
Peripheral Clock
Enable (11 bits)
OSC_IN
ADC
to ADC
Prescaler
/2, 4, 6, 8
ADCCLK
/128
LSE
OSC32_IN
to RTC
LSE OSC
RTCCLK
32.768 kHz
OSC32_OUT
RTCSEL[1:0]
to Independent Watchdog (IWDG)
IWDGCLK
LSI
LSI RC
40 kHz
Legend:
HSE = high-speed external clock signal
HSI = high-speed internal clock signal
LSI = low-speed internal clock signal
LSE = low-speed external clock signal
Main
Clock Output
/2
PLLCLK
MCO
HSI
HSE
SYSCLK
MCO
ai15174
1. When the HSI is used as a PLL clock input, the maximum system clock frequency that can be achieved is
36 MHz.
2. To have an ADC conversion time of 1 µs, APB2 must be at 14 MHz or 28 MHz.
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Description
STM32F101x4, STM32F101x6
2.2
Full compatibility throughout the family
The STM32F101xx is a complete family whose members are fully pin-to-pin, software and
feature compatible. In the reference manual, the STM32F101x4 and STM32F101x6 are
referred to as low-density devices, the STM32F101x8 and STM32F101xB are referred to as
medium-density devices, and the STM32F101xC, STM32F101xD and STM32F101xE are
referred to as high-density devices.
Low- and high-density devices are an extension of the STM32F101x8/B devices, they are
specified in the STM32F101x4/6 and STM32F101xC/D/E datasheets, respectively. Low-
density devices feature lower Flash memory and RAM capacities and a timer less. High-
density devices have higher Flash memory and RAM capacities, and additional peripherals
like FSMC and DAC, while remaining fully compatible with the other members of the
STM32F101xx family.
The STM32F101x4, STM32F101x6, STM32F101xC, STM32F101xD and STM32F101xE
are a drop-in replacement for the STM32F101x8/B medium-density devices, allowing the
user to try different memory densities and providing a greater degree of freedom during the
development cycle.
Moreover, the STM32F101xx performance line family is fully compatible with all existing
STM32F101xx access line and STM32F102xx USB access line devices.
Table 3.
Pinout
STM32F101xx family
Memory size
Low-density devices Medium-density devices
High-density devices
16 KB
Flash
32 KB
64 KB
Flash
128 KB
Flash
256 KB
384 KB
Flash
512 KB
Flash(1)
Flash
Flash
32 KB
RAM
48 KB
RAM
48 KB
RAM
4 KB RAM 6 KB RAM 10 KB RAM 16 KB RAM
144
100
64
5 × USARTs
4 × 16-bit timers, 2 × basic timers
3 × SPIs, 2 × I2Cs, 1 × ADC,
3 × USARTs
2 × DACs, FSMC (100 and 144 pins)
2 × USARTs
2 × 16-bit timers
1 × SPI, 1 × I2C
1 × ADC
3 × 16-bit timers
2 × SPIs, 2 × I2Cs,
1 × ADC
48
36
1. For orderable part numbers that do not show the A internal code after the temperature range code (6), the
reference datasheet for electrical characteristics is that of the STM32F101x8/B medium-density devices.
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STM32F101x4, STM32F101x6
Description
2.3
Overview
®
2.3.1
ARM Cortex™-M3 core with embedded Flash and SRAM
The ARM Cortex™-M3 processor is the latest generation of ARM processors for embedded
systems. It has been developed to provide a low-cost platform that meets the needs of MCU
implementation, with a reduced pin count and low-power consumption, while delivering
outstanding computational performance and an advanced system response to interrupts.
The ARM Cortex™-M3 32-bit RISC processor features exceptional code-efficiency,
delivering the high-performance expected from an ARM core in the memory size usually
associated with 8- and 16-bit devices.
The STM32F101xx Low-density access line family having an embedded ARM core, is
therefore compatible with all ARM tools and software.
2.3.2
2.3.3
Embedded Flash memory
16 or 32 Kbytes of embedded Flash is available for storing programs and data.
CRC (cyclic redundancy check) calculation unit
The CRC (cyclic redundancy check) calculation unit is used to get a CRC code from a 32-bit
data word and a fixed generator polynomial.
Among other applications, CRC-based techniques are used to verify data transmission or
storage integrity. In the scope of the EN/IEC 60335-1 standard, they offer a means of
verifying the Flash memory integrity. The CRC calculation unit helps compute a signature of
the software during runtime, to be compared with a reference signature generated at link-
time and stored at a given memory location.
2.3.4
2.3.5
Embedded SRAM
Up to 6 Kbytes of embedded SRAM accessed (read/write) at CPU clock speed with 0 wait
states.
Nested vectored interrupt controller (NVIC)
The STM32F101xx Low-density access line embeds a nested vectored interrupt controller
able to handle up to 43 maskable interrupt channels (not including the 16 interrupt lines of
Cortex™-M3) and 16 priority levels.
●
●
●
●
●
●
●
●
Closely coupled NVIC gives low latency interrupt processing
Interrupt entry vector table address passed directly to the core
Closely coupled NVIC core interface
Allows early processing of interrupts
Processing of late arriving higher priority interrupts
Support for tail-chaining
Processor state automatically saved
Interrupt entry restored on interrupt exit with no instruction overhead
This hardware block provides flexible interrupt management features with minimal interrupt
latency.
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Description
STM32F101x4, STM32F101x6
2.3.6
External interrupt/event controller (EXTI)
The external interrupt/event controller consists of 19 edge detector lines used to generate
interrupt/event requests. Each line can be independently configured to select the trigger
event (rising edge, falling edge, both) and can be masked independently. A pending register
maintains the status of the interrupt requests. The EXTI can detect an external line with a
pulse width shorter than the Internal APB2 clock period. Up to 80 GPIOs can be connected
to the 16 external interrupt lines.
2.3.7
Clocks and startup
System clock selection is performed on startup, however the internal RC 8 MHz oscillator is
selected as default CPU clock on reset. An external 4-16 MHz clock can be selected, in
which case it is monitored for failure. If failure is detected, the system automatically switches
back to the internal RC oscillator. A software interrupt is generated if enabled. Similarly, full
interrupt management of the PLL clock entry is available when necessary (for example on
failure of an indirectly used external crystal, resonator or oscillator).
Several prescalers allow the configuration of the AHB frequency, the high-speed APB
(APB2) and the low-speed APB (APB1) domains. The maximum frequency of the AHB and
the APB domains is 36 MHz. See Figure 2 for details on the clock tree.
2.3.8
2.3.9
Boot modes
At startup, boot pins are used to select one of three boot options:
●
●
●
Boot from User Flash
Boot from System Memory
Boot from embedded SRAM
The boot loader is located in System Memory. It is used to reprogram the Flash memory by
using USART1. For further details please refer to AN2606.
Power supply schemes
●
V
= 2.0 to 3.6 V: External power supply for I/Os and the internal regulator.
DD
Provided externally through V pins.
DD
●
V
, V
= 2.0 to 3.6 V: External analog power supplies for ADC, Reset blocks, RCs
DDA
SSA
and PLL (minimum voltage to be applied to V
is 2.4 V when the ADC is used).
DDA
V
and V
must be connected to V and V , respectively.
DDA
SSA DD SS
●
V
= 1.8 to 3.6 V: Power supply for RTC, external clock 32 kHz oscillator and backup
BAT
registers (through power switch) when V is not present.
DD
For more details on how to connect power pins, refer to Figure 10: Power supply scheme.
2.3.10
Power supply supervisor
The device has an integrated power on reset (POR)/power down reset (PDR) circuitry. It is
always active, and ensures proper operation starting from/down to 2 V. The device remains
in reset mode when V is below a specified threshold, V
, without the need for an
DD
POR/PDR
external reset circuit.
The device features an embedded programmable voltage detector (PVD) that monitors the
/V power supply and compares it to the V threshold. An interrupt can be
V
DD DDA
PVD
generated when V /V
drops below the V
threshold and/or when V /V
is higher
DD DDA
PVD
DD DDA
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Doc ID 15058 Rev 5
STM32F101x4, STM32F101x6
Description
than the V threshold. The interrupt service routine can then generate a warning
PVD
message and/or put the MCU into a safe state. The PVD is enabled by software.
Refer to Table 10: Embedded reset and power control block characteristics for the values of
V
and V
.
POR/PDR
PVD
2.3.11
Voltage regulator
The regulator has three operation modes: main (MR), low power (LPR) and power down.
●
●
●
MR is used in the nominal regulation mode (Run)
LPR is used in the Stop mode
Power down is used in Standby mode: the regulator output is in high impedance: the
kernel circuitry is powered down, inducing zero consumption (but the contents of the
registers and SRAM are lost)
This regulator is always enabled after reset. It is disabled in Standby mode, providing high
impedance output.
2.3.12
Low-power modes
The STM32F101xx Low-density access line supports three low-power modes to achieve the
best compromise between low power consumption, short startup time and available wakeup
sources:
●
Sleep mode
In Sleep mode, only the CPU is stopped. All peripherals continue to operate and can
wake up the CPU when an interrupt/event occurs.
●
Stop mode
Stop mode achieves the lowest power consumption while retaining the content of
SRAM and registers. All clocks in the 1.8 V domain are stopped, the PLL, the HSI RC
and the HSE crystal oscillators are disabled. The voltage regulator can also be put
either in normal or in low power mode.
The device can be woken up from Stop mode by any of the EXTI line. The EXTI line
source can be one of the 16 external lines, the PVD output or the RTC alarm.
●
Standby mode
The Standby mode is used to achieve the lowest power consumption. The internal
voltage regulator is switched off so that the entire 1.8 V domain is powered off. The
PLL, the HSI RC and the HSE crystal oscillators are also switched off. After entering
Standby mode, SRAM and register contents are lost except for registers in the Backup
domain and Standby circuitry.
The device exits Standby mode when an external reset (NRST pin), a IWDG reset, a
rising edge on the WKUP pin, or an RTC alarm occurs.
Note:
The RTC, the IWDG, and the corresponding clock sources are not stopped by entering Stop
or Standby mode.
2.3.13
DMA
The flexible 7-channel general-purpose DMA is able to manage memory-to-memory,
peripheral-to-memory and memory-to-peripheral transfers. The DMA controller supports
circular buffer management avoiding the generation of interrupts when the controller
reaches the end of the buffer.
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Description
STM32F101x4, STM32F101x6
Each channel is connected to dedicated hardware DMA requests, with support for software
trigger on each channel. Configuration is made by software and transfer sizes between
source and destination are independent.
2
The DMA can be used with the main peripherals: SPI, I C, USART, general purpose timers
TIMx and ADC.
2.3.14
RTC (real-time clock) and backup registers
The RTC and the backup registers are supplied through a switch that takes power either on
V
supply when present or through the VBAT pin. The backup registers are ten 16-bit
DD
registers used to store 20 bytes of user application data when V power is not present.
DD
The real-time clock provides a set of continuously running counters which can be used with
suitable software to provide a clock calendar function, and provides an alarm interrupt and a
periodic interrupt. It is clocked by a 32.768 kHz external crystal, resonator or oscillator, the
internal low power RC oscillator or the high-speed external clock divided by 128. The
internal low power RC has a typical frequency of 40 kHz. The RTC can be calibrated using
an external 512 Hz output to compensate for any natural crystal deviation. The RTC
features a 32-bit programmable counter for long term measurement using the Compare
register to generate an alarm. A 20-bit prescaler is used for the time base clock and is by
default configured to generate a time base of 1 second from a clock at 32.768 kHz.
2.3.15
Independent watchdog
The independent watchdog is based on a 12-bit downcounter and 8-bit prescaler. It is
clocked from an independent 40 kHz internal RC and as it operates independently from the
main clock, it can operate in Stop and Standby modes. It can be used as a watchdog to
reset the device when a problem occurs, or as a free running timer for application timeout
management. It is hardware or software configurable through the option bytes. The counter
can be frozen in debug mode.
2.3.16
2.3.17
Window watchdog
The window watchdog is based on a 7-bit downcounter that can be set as free running. It
can be used as a watchdog to reset the device when a problem occurs. It is clocked from the
main clock. It has an early warning interrupt capability and the counter can be frozen in
debug mode.
SysTick timer
This timer is dedicated for OS, but could also be used as a standard down counter. It
features:
●
●
●
●
A 24-bit down counter
Autoreload capability
Maskable system interrupt generation when the counter reaches 0.
Programmable clock source
2.3.18
General-purpose timers (TIMx)
There areup to two synchronizable general-purpose timers embedded in the STM32F101xx
Low-density access line devices. These timers are based on a 16-bit auto-reload up/down
counter, a 16-bit prescaler and feature 4 independent channels each for input capture,
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STM32F101x4, STM32F101x6
Description
output compare, PWM or one pulse mode output. This gives up to 12 input captures / output
compares / PWMs on the largest packages.
The general-purpose timers can work together via the Timer Link feature for synchronization
or event chaining. Their counter can be frozen in debug mode. Any of the general-purpose
timers can be used to generate PWM outputs. They all have independent DMA request
generation.
These timers are capable of handling quadrature (incremental) encoder signals and the
digital outputs from 1 to 3 hall-effect sensors.
²
2.3.19
I C bus
The I²C bus interface can operate in multimaster and slave modes. It can support standard
and fast modes.
It supports dual slave addressing (7-bit only) and both 7/10-bit addressing in master mode.
A hardware CRC generation/verification is embedded.
The interface can be served by DMA and it supports SM Bus 2.0/PM Bus.
2.3.20
2.3.21
Universal synchronous/asynchronous receiver transmitter (USART)
The available USART interfaces communicate at up to 2.25 Mbit/s. They provide hardware
management of the CTS and RTS signals, support IrDA SIR ENDEC, are ISO 7816
compliant and have LIN Master/Slave capability.
The USART interfaces can be served by the DMA controller.
Serial peripheral interface (SPI)
The SPI interface is able to communicate up to 18 Mbit/s in slave and master modes in full-
duplex and simplex communication modes. The 3-bit prescaler gives 8 master mode
frequencies and the frame is configurable to 8 bits or 16 bits. The hardware CRC
generation/verification supports basic SD Card/MMC modes.
The SPI interface can be served by the DMA controller.
2.3.22
2.3.23
GPIOs (general-purpose inputs/outputs)
Each of the GPIO pins can be configured by software as output (push-pull or open-drain), as
input (with or without pull-up or pull-down) or as peripheral alternate function. Most of the
GPIO pins are shared with digital or analog alternate functions. All GPIOs are high current-
capable except for analog inputs.
The I/Os alternate function configuration can be locked if needed following a specific
sequence in order to avoid spurious writing to the I/Os registers.
ADC (analog to digital converter)
The 12-bit analog to digital converter has up to 16 external channels and performs
conversions in single-shot or scan modes. In scan mode, automatic conversion is performed
on a selected group of analog inputs.
The ADC can be served by the DMA controller.
Doc ID 15058 Rev 5
19/79
Description
2.3.24
STM32F101x4, STM32F101x6
An analog watchdog feature allows very precise monitoring of the converted voltage of one,
some or all selected channels. An interrupt is generated when the converted voltage is
outside the programmed thresholds.
Temperature sensor
The temperature sensor has to generate a voltage that varies linearly with temperature. The
conversion range is between 2 V < V
< 3.6 V. The temperature sensor is internally
DDA
connected to the ADC_IN16 input channel which is used to convert the sensor output
voltage into a digital value.
2.3.25
Serial wire JTAG debug port (SWJ-DP)
The ARM SWJ-DP Interface is embedded, and is a combined JTAG and serial wire debug
port that enables either a serial wire debug or a JTAG probe to be connected to the target.
The JTAG TMS and TCK pins are shared respectively with SWDIO and SWCLK and a
specific sequence on the TMS pin is used to switch between JTAG-DP and SW-DP.
20/79
Doc ID 15058 Rev 5
STM32F101x4, STM32F101x6
Pinouts and pin description
3
Pinouts and pin description
Figure 3.
STM32F101xx Low-density access line LQFP64 pinout
64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49
48
VDD_2
VSS_2
PA13
PA12
PA11
PA10
PA9
PA8
PC9
PC8
PC7
VBAT
PC13-TAMPER-RTC
PC14-OSC32_IN
PC15-OSC32_OUT
PD0 OSC_IN
PD1 OSC_OUT
NRST
1
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
2
3
4
5
6
7
PC0
PC1
PC2
PC3
8
LQFP64
9
10
11
12
13
14
15
16
PC6
VSSA
VDDA
PA0-WKUP
PB15
PB14
PB13
PB12
PA1
PA2
17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32
ai14387b
Figure 4.
STM32F101xx Low-density access line LQFP48 pinout
48 47 46 45 44 43 42 41 40 39 38 37
VDD_2
VSS_2
PA13
PA12
PA11
PA10
PA9
36
35
34
33
32
31
30
29
28
27
26
25
1
2
3
4
5
6
7
8
9
VBAT
PC13-TAMPER-RTC
PC14-OSC32_IN
PC15-OSC32_OUT
PD0-OSC_IN
PD1-OSC_OUT
NRST
LQFP48
PA8
VSSA
VDDA
PB15
PB14
PB13
PB12
PA0-WKUP 10
PA1 11
12
PA2
24
13 14 15 16 17 18 19 20 21 22 23
ai14378d
Doc ID 15058 Rev 5
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Pinouts and pin description
Figure 5.
STM32F101x4, STM32F101x6
STM32F101xx Low-density access line VFQPFN48 pinout
48 47 46 45 44 43 42 41 40 39 38 37
1
VDD_2
VSS_2
PA13
PA12
PA11
PA10
PA9
36
VBAT
PC13-TAMPER-RTC
PC14-OSC32_IN
PC15-OSC32_OUT
PD0-OSC_IN
PD1-OSC_OUT
NRST
35
34
33
32
31
30
29
28
27
26
25
2
3
4
5
6
VFQFPN48
7
8
PA8
VSSA
VDDA
PA0-WKUP
PA1
9
PB15
PB14
PB13
PB12
10
11
12
PA2
13 14 15 16 17 18 19 20 21 22 23 24
ai18300
Figure 6.
STM32F101xx Low-density access line VFQPFN36 pinout
36 35 34
33 32 31 30 29 28
27
V
V
V
1
DD_3
DD_2
SS_2
OSC_IN/PD0
OSC_OUT/PD1
NRST
2
3
4
5
6
7
8
9
26
PA13
PA12
PA11
PA10
PA9
25
24
QFN36
V
23
22
SSA
V
DDA
PA0-WKUP
PA1
21
20
PA8
PA2
V
19
DD_1
10 11 12 13
14 15 16 17
18
ai14654
22/79
Doc ID 15058 Rev 5
STM32F101x4, STM32F101x6
Pinouts and pin description
Alternate functions(3)(4)
Table 4.
Pins
Low-density STM32F101xx pin definitions
Main
Pin name
function(3)
(after reset)
Default
Remap
1
2
3
4
5
6
7
-
1
2
-
-
VBAT
S
VBAT
PC13(6)
PC14(6)
PC15(6)
OSC_IN
OSC_OUT
NRST
PC0
PC13-TAMPER-RTC(5) I/O
PC14-OSC32_IN(5)
I/O
PC15-OSC32_OUT(5) I/O
TAMPER-RTC
OSC32_IN
3
-
4
-
OSC32_OUT
5
2
3
4
-
OSC_IN
OSC_OUT
NRST
PC0
I
6
O
7
I/O
I/O
I/O
I/O
I/O
S
8
ADC_IN10
ADC_IN11
ADC_IN12
ADC_IN13
-
9
-
PC1
PC1
-
10
11
12
13
-
PC2
PC2
-
-
PC3
PC3
8
9
5
6
VSSA
VSSA
VDDA
S
VDDA
WKUP/USART2_CTS/
ADC_IN0/
10 14
7
PA0-WKUP
I/O
PA0
TIM2_CH1_ETR(7)
USART2_RTS/
11 15
12 16
8
9
PA1
PA2
PA3
I/O
I/O
I/O
PA1
PA2
PA3
ADC_IN1/TIM2_CH2(7)
USART2_TX/
ADC_IN2/TIM2_CH3(7)
USART2_RX/
13 17 10
ADC_IN3/TIM2_CH4(7)
-
-
18
19
-
-
VSS_4
VDD_4
S
S
VSS_4
VDD_4
SPI_NSS(7)/ADC_IN4
USART2_CK
14 20 11
15 21 12
16 22 13
PA4
PA5
PA6
I/O
I/O
I/O
PA4
PA5
PA6
SPI_SCK(7)/ADC_IN5
SPI_MISO(7)/ADC_IN6/
TIM3_CH1(7)
SPI_MOSI(7)/ADC_IN7/
TIM3_CH2(7)
17 23 14
PA7
I/O
PA7
-
-
24
25
PC4
PC5
PB0
PB1
I/O
I/O
I/O
I/O
PC4
PC5
PB0
PB1
ADC_IN14
ADC_IN15
18 26 15
19 27 16
ADC_IN8/TIM3_CH3(7)
ADC_IN9/TIM3_CH4(7)
Doc ID 15058 Rev 5
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Pinouts and pin description
STM32F101x4, STM32F101x6
Alternate functions(3)(4)
Table 4.
Pins
Low-density STM32F101xx pin definitions (continued)
Main
Pin name
function(3)
(after reset)
Default
Remap
20 28 17
PB2
PB10
PB11
VSS_1
VDD_1
PB12
PB13
PB14
PB15
PC6
I/O
I/O
I/O
S
FT
FT
FT
PB2/BOOT1
PB10
PB11
VSS_1
VDD_1
PB12
PB13
PB14
PB15
PC6
21 29
22 30
-
-
TIM2_CH3
TIM2_CH4
23 31 18
24 32 19
S
25 33
26 34
27 35
28 36
-
-
-
-
-
-
-
-
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
S
FT
FT
FT
FT
FT
FT
FT
FT
FT
FT
FT
FT
FT
-
37
38
39
40
TIM3_CH1
TIM3_CH2
TIM3_CH3
TIM3_CH4
PC7
PC7
PC8
PC8
-
PC9
PC9
29 41 20
30 42 21
31 43 22
32 44 23
33 45 24
34 46 25
35 47 26
36 48 27
37 49 28
PA8
PA8
USART1_CK/MCO
USART1_TX(7)
USART1_RX(7)
USART1_CTS
USART1_RTS
PA9
PA9
PA10
PA11
PA12
PA13
VSS_2
VDD_2
PA14
PA10
PA11
PA12
FT JTMS-SWDIO
VSS_2
PA13
PA14
S
VDD_2
I/O
FT JTCK/SWCLK
TIM2_CH1_ETR/
PA15 / SPI_NSS
38 50 29
PA15
I/O
FT
JTDI
-
-
51
52
53
5
PC10
PC11
PC12
PD0
I/O
I/O
I/O
I/O
I/O
I/O
FT
FT
FT
FT
FT
FT
PC10
PC11
-
PC12
5
6
2
3
-
OSC_IN(8)
OSC_OUT(8)
PD2
6
PD1
54
PD2
TIM3_ETR
TIM2_CH2 / PB3
TRACESWO
SPI_SCK
39 55 30
PB3
I/O
FT
JTDO
24/79
Doc ID 15058 Rev 5
STM32F101x4, STM32F101x6
Pinouts and pin description
Alternate functions(3)(4)
Table 4.
Pins
Low-density STM32F101xx pin definitions (continued)
Main
Pin name
function(3)
(after reset)
Default
Remap
TIM3_CH1 / PB4
SPI_MISO
40 56 31
41 57 32
PB4
PB5
I/O
I/O
FT
NJTRST
PB5
TIM3_CH2 /
SPI_MOSI
I2C_SMBA
42 58 33
43 59 34
44 60 35
PB6
PB7
I/O
I/O
I
FT
FT
PB6
PB7
I2C_SCL(7)
I2C_SDA(7)
USART1_TX
USART1_RX
BOOT0
PB8
BOOT0
PB8
45 61
46 62
-
-
I/O
I/O
S
FT
FT
I2C_SCL
I2C_SDA
PB9
PB9
47 63 36
48 64
VSS_3
VDD_3
VSS_3
VDD_3
1
S
1. I = input, O = output, S = supply.
2. FT= 5 V tolerant.
3. Function availability depends on the chosen device. For devices having reduced peripheral counts, it is always the lower
number of peripherals that is included. For example, if a device has only one SPI, two USARTs and two timers, they will be
called SPI, USART1 & USART2 and TIM2 & TIM 3, respectively. Refer to Table 2 on page 11.
4. If several peripherals share the same I/O pin, to avoid conflict between these alternate functions only one peripheral should
be enabled at a time through the peripheral clock enable bit (in the corresponding RCC peripheral clock enable register).
5. PC13, PC14 and PC15 are supplied through the power switch. Since the switch only sinks a limited amount of current
(3 mA), the use of GPIOs PC13 to PC15 in output mode is limited: the speed should not exceed 2 MHz with a maximum
load of 30 pF and these IOs must not be used as a current source (e.g. to drive an LED).
6. Main function after the first backup domain power-up. Later on, it depends on the contents of the Backup registers even
after reset (because these registers are not reset by the main reset). For details on how to manage these IOs, refer to the
Battery backup domain and BKP register description sections in the STM32F10xxx reference manual, available from the
STMicroelectronics website: www.st.com.
7. This alternate function can be remapped by software to some other port pins (if available on the used package). For more
details, refer to the Alternate function I/O and debug configuration section in the STM32F10xxx reference manual, available
from the STMicroelectronics website: www.st.com.
8. The pins number 2 and 3 in the VFQFPN36 package, and 5 and 6 in the LQFP48 and LQFP64 packages are configured as
OSC_IN/OSC_OUT after reset, however the functionality of PD0 and PD1 can be remapped by software on these pins. For
more details, refer to the Alternate function I/O and debug configuration section in the STM32F10xxx reference manual.
Doc ID 15058 Rev 5
25/79
Memory mapping
STM32F101x4, STM32F101x6
4
Memory mapping
The memory map is shown in Figure 7.
Figure 7.
Memory map
APB memory space
0xFFFF FFFF
reserved
0xE010 0000
0xFFFF FFFF
reserved
0x6000 0000
reserved
0x4002 3400
CRC
0x4002 3000
7
reserved
0x4002 2400
0xE010 0000
Cortex-M3 internal
peripherals
Flash interface
0x4002 2000
0xE000 0000
reserved
0x4002 1400
RCC
0x4002 1000
reserved
6
0x4002 0400
DMA
0x4002 0000
reserved
0xC000 0000
0x4001 3C00
USART1
0x4001 3800
reserved
0x4001 3400
5
SPI
0x4001 3000
reserved
0x4001 2C00
0xA000 0000
reserved
0x4001 2800
ADC
0x4001 2400
reserved
0x4001 1800
4
0x1FFF FFFF
0x1FFF F80F
reserved
Port D
0x4001 1400
Port C
0x4001 1000
0x8000 0000
Option Bytes
Port B
0x1FFF F800
0x4001 0C00
Port A
0x4001 0800
System memory
EXTI
3
0x4001 0400
AFIO
0x4001 0000
0x1FFF F000
reserved
0x4000 7400
0x6000 0000
PWR
0x4000 7000
BKP
0x4000 6C00
2
reserved
0x4000 6800
reserved
reserved
0x4000 6400
Peripherals
reserved
0x4000 0000
0x4000 6000
reserved
0x4000 5800
I2C
0x4000 5400
1
reserved
USART2
0x4000 4800
0x4000 4400
0x4000 3400
0x4000 3000
0x4000 2C00
SRAM
reserved
0x2000 0000
0x0801 FFFF
IWDG
WWDG
RTC
Flash memory
0
0x4000 2800
0x4000 0800
reserved
TIM3
0x0800 0000
0x0000 0000
0x0000 0000
0x4000 0400
0x4000 0000
Aliased to Flash or
system memory
depending on
BOOT pins
TIM2
Reserved
ai15175b
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Doc ID 15058 Rev 5
STM32F101x4, STM32F101x6
Electrical characteristics
5
Electrical characteristics
5.1
Parameter conditions
Unless otherwise specified, all voltages are referenced to V
.
SS
5.1.1
Minimum and maximum values
Unless otherwise specified the minimum and maximum values are guaranteed in the worst
conditions of ambient temperature, supply voltage and frequencies by tests in production on
100% of the devices with an ambient temperature at T = 25 °C and T = T max (given by
A
A
A
the selected temperature range).
Data based on characterization results, design simulation and/or technology characteristics
are indicated in the table footnotes and are not tested in production. Based on
characterization, the minimum and maximum values refer to sample tests and represent the
mean value plus or minus three times the standard deviation (mean 3Σ).
5.1.2
5.1.3
Typical values
Unless otherwise specified, typical data are based on T = 25 °C, V = 3.3 V (for the
A
DD
2 V ≤ V ≤ 3.6 V voltage range). They are given only as design guidelines and are not
DD
tested.
Typical ADC accuracy values are determined by characterization of a batch of samples from
a standard diffusion lot over the full temperature range, where 95% of the devices have an
error less than or equal to the value indicated (mean 2Σ).
Typical curves
Unless otherwise specified, all typical curves are given only as design guidelines and are
not tested.
5.1.4
5.1.5
Loading capacitor
The loading conditions used for pin parameter measurement are shown in Figure 8.
Pin input voltage
The input voltage measurement on a pin of the device is described in Figure 9.
Doc ID 15058 Rev 5
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Electrical characteristics
Figure 8.
STM32F101x4, STM32F101x6
Pin input voltage
Pin loading conditions
Figure 9.
STM32F10xxx pin
STM32F10xxx pin
C= 50 pF
V
IN
ai14124b
ai14123b
5.1.6
Power supply scheme
Figure 10. Power supply scheme
V
BAT
Backup circuitry
(OSC32K,RTC,
Wakeup logic
Power switch
1.8-3.6V
Backup registers)
OUT
IN
IO
Logic
GP I/Os
Kernel logic
(CPU,
Digital
& Memories)
V
DD
V
DD
1/2/3/4/5
Regulator
5 × 100 nF
+ 1 × 4.7 µF
V
SS
1/2/3/4/5
V
DD
V
DDA
V
REF+
Analog:
RCs, PLL,
...
10 nF
+ 1 µF
ADC
REF-
V
V
SSA
ai15496
Caution:
In Figure 10, the 4.7 µF capacitor must be connected to V
.
DD3
28/79
Doc ID 15058 Rev 5
STM32F101x4, STM32F101x6
Electrical characteristics
5.1.7
Current consumption measurement
Figure 11. Current consumption measurement scheme
I
_V
DD BAT
V
BAT
I
DD
V
DD
V
DDA
ai14126
5.2
Absolute maximum ratings
Stresses above the absolute maximum ratings listed in Table 5: Voltage characteristics,
Table 6: Current characteristics, and Table 7: Thermal characteristics may cause permanent
damage to the device. These are stress ratings only and functional operation of the device
at these conditions is not implied. Exposure to maximum rating conditions for extended
periods may affect device reliability.
Table 5.
Symbol
Voltage characteristics
Ratings
Min
Max
Unit
External main supply voltage (including
VDD − VSS
–0.3
4.0
(1)
VDDA and VDD
)
V
Input voltage on five volt tolerant pin
Input voltage on any other pin
VSS − 0.3
VSS − 0.3
VDD + 4.0
4.0
(2)
VIN
|ΔVDDx
|
Variations between different VDD power pins
50
mV
Variations between all the different ground
pins
|VSSX − VSS
|
50
seeSection 5.3.11:Absolute
maximum ratings (electrical
sensitivity)
Electrostatic discharge voltage (human body
model)
VESD(HBM)
1. All main power (VDD, VDDA) and ground (VSS, VSSA) pins must always be connected to the external power
supply, in the permitted range.
2. VIN maximum must always be respected. Refer to Table 6: Current characteristics for the maximum
allowed injected current values.
Doc ID 15058 Rev 5
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Electrical characteristics
STM32F101x4, STM32F101x6
Table 6.
Symbol
Current characteristics
Ratings
Max.
Unit
IVDD
IVSS
Total current into VDD/VDDA power lines (source)(1)
Total current out of VSS ground lines (sink)(1)
Output current sunk by any I/O and control pin
Output current source by any I/Os and control pin
Injected current on five volt tolerant pins(3)
Injected current on any other pin(4)
150
150
25
IIO
− 25
-5/+0
5
mA
(2)
IINJ(PIN)
ΣIINJ(PIN)
Total injected current (sum of all I/O and control pins)(5)
25
1. All main power (VDD, VDDA) and ground (VSS, VSSA) pins must always be connected to the external power
supply, in the permitted range.
2. Negative injection disturbs the analog performance of the device. See note in Section 5.3.17: 12-bit ADC
characteristics.
3. Positive injection is not possible on these I/Os. A negative injection is induced by VIN<VSS. IINJ(PIN) must
never be exceeded. Refer to Table 5: Voltage characteristics for the maximum allowed input voltage
values.
4. A positive injection is induced by VIN>VDD while a negative injection is induced by VIN<VSS. IINJ(PIN) must
never be exceeded. Refer to Table 5: Voltage characteristics for the maximum allowed input voltage
values.
5. When several inputs are submitted to a current injection, the maximum ΣIINJ(PIN) is the absolute sum of the
positive and negative injected currents (instantaneous values).
Table 7.
Thermal characteristics
Ratings
Symbol
Value
Unit
TSTG
TJ
Storage temperature range
–65 to +150
150
°C
°C
Maximum junction temperature
5.3
Operating conditions
5.3.1
General operating conditions
Table 8.
Symbol
General operating conditions
Parameter
Conditions
Min
Max
Unit
fHCLK
fPCLK1
fPCLK2
VDD
Internal AHB clock frequency
Internal APB1 clock frequency
Internal APB2 clock frequency
Standard operating voltage
0
0
0
2
36
36
36
3.6
MHz
V
Analog operating voltage
(ADC not used)
2
3.6
Must be the same potential
as VDD
(1)
VDDA
V
V
(2)
Analog operating voltage
(ADC used)
2.4
1.8
3.6
3.6
VBAT
Backup operating voltage
30/79
Doc ID 15058 Rev 5
STM32F101x4, STM32F101x6
Electrical characteristics
Table 8.
Symbol
General operating conditions (continued)
Parameter
Conditions
Min
Max
Unit
LQFP64
LQFP48
444
363
1000
85
Power dissipation at TA =
85 °C(3)
PD
mW
VFQFPN36
Maximum power dissipation –40
°C
°C
°C
TA
TJ
Ambient temperature
Low power dissipation(4)
–40
–40
105
105
Junction temperature range
1. When the ADC is used, refer to Table 42: ADC characteristics.
2. It is recommended to power VDD and VDDA from the same source. A maximum difference of 300 mV
between VDD and VDDA can be tolerated during power-up and operation.
3. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax (see Table 6.2: Thermal
characteristics on page 74).
4. In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax (see
Table 6.2: Thermal characteristics on page 74).
5.3.2
Operating conditions at power-up / power-down
Subject to general operating conditions for T .
A
Table 9.
Symbol
Operating conditions at power-up / power-down
Parameter
VDD rise time rate
VDD fall time rate
Conditions
Min
0
Max
∞
Unit
tVDD
µs/V
20
∞
5.3.3
Embedded reset and power control block characteristics
The parameters given in Table 10 are derived from tests performed under the ambient
temperature and V supply voltage conditions summarized in Table 8.
DD
Doc ID 15058 Rev 5
31/79
Electrical characteristics
STM32F101x4, STM32F101x6
.
Table 10. Embedded reset and power control block characteristics
Symbol
Parameter
Conditions
Min
Typ Max Unit
PLS[2:0]=000 (rising edge)
PLS[2:0]=000 (falling edge)
PLS[2:0]=001 (rising edge)
PLS[2:0]=001 (falling edge)
PLS[2:0]=010 (rising edge)
PLS[2:0]=010 (falling edge)
PLS[2:0]=011 (rising edge)
PLS[2:0]=011 (falling edge)
PLS[2:0]=100 (rising edge)
PLS[2:0]=100 (falling edge)
PLS[2:0]=101 (rising edge)
PLS[2:0]=101 (falling edge)
PLS[2:0]=110 (rising edge)
PLS[2:0]=110 (falling edge)
PLS[2:0]=111 (rising edge)
PLS[2:0]=111 (falling edge)
2.1
2
2.18 2.26
2.08 2.16
V
V
2.19 2.28 2.37
2.09 2.18 2.27
2.28 2.38 2.48
2.18 2.28 2.38
2.38 2.48 2.58
2.28 2.38 2.48
2.47 2.58 2.69
2.37 2.48 2.59
2.57 2.68 2.79
2.47 2.58 2.69
2.66 2.78 2.9
2.56 2.68 2.8
V
V
V
V
V
V
Programmable voltage
detector level selection
VPVD
V
V
V
V
V
V
2.76 2.88
3
V
2.66 2.78 2.9
100
V
(2)
VPVDhyst
PVD hysteresis
mV
V
1.8(1)
Falling edge
Rising edge
1.88 1.96
Power on/power down
reset threshold
VPOR/PDR
1.84 1.92 2.0
40
V
(2)
VPDRhyst
PDR hysteresis
mV
ms
(2)
tRSTTEMPO
Reset temporization
1.5
2.5
4.5
1. The product behavior is guaranteed by design down to the minimum VPOR/PDR value.
2. Guaranteed by design, not tested in production.
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STM32F101x4, STM32F101x6
Electrical characteristics
5.3.4
Embedded reference voltage
The parameters given in Table 11 are derived from tests performed under the ambient
temperature and V supply voltage conditions summarized in Table 8.
DD
Table 11. Embedded internal reference voltage
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VREFINT Internal reference voltage
–40 °C < TA < +85 °C 1.16 1.20
5.1
1.24
V
ADC sampling time when reading
the internal reference voltage
(1)
17.1(2)
10
TS_vrefint
µs
Internal reference voltage spread
over the temperature range
(2)
VRERINT
VDD = 3 V 10 mV
mV
ppm/
°C
(2)
TCoeff
Temperature coefficient
100
1. Shortest sampling time can be determined in the application by multiple iterations.
2. Guaranteed by design, not tested in production.
5.3.5
Supply current characteristics
The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in Figure 11: Current consumption
measurement scheme.
All Run-mode current consumption measurements given in this section are performed with a
reduced code that gives a consumption equivalent to Dhrystone 2.1 code.
Maximum current consumption
The MCU is placed under the following conditions:
●
●
●
All I/O pins are in input mode with a static value at V or V (no load)
DD SS
All peripherals are disabled except if it is explicitly mentioned
The Flash access time is adjusted to f
wait state from 24 to 36 MHz)
frequency (0 wait state from 0 to 24 MHz, 1
HCLK
●
●
Prefetch in on (reminder: this bit must be set before clock setting and bus prescaling)
When the peripherals are enabled f = f , f = f
PCLK1
HCLK/2 PCLK2
HCLK
The parameters given in Table 12 are derived from tests performed under the ambient
temperature and V supply voltage conditions summarized in Table 8.
DD
Doc ID 15058 Rev 5
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Electrical characteristics
STM32F101x4, STM32F101x6
Table 12. Maximum current consumption in Run mode, code with data processing
running from Flash
Max(1)
Symbol
Parameter
Conditions
fHCLK
Unit
TA = 85 °C
36 MHz
26
18
13
7
External clock (2), all
peripherals enabled
24 MHz
16 MHz
8 MHz
Supply current
in Run mode
IDD
mA
36 MHz
24 MHz
16 MHz
8 MHz
19
13
10
6
External clock (2), all
peripherals Disabled
1. Based on characterization, not tested in production.
2. External clock is 8 MHz and PLL is on when fHCLK > 8 MHz.
Table 13. Maximum current consumption in Run mode, code with data processing
running from RAM
Max(1)
Symbol
Parameter
Conditions
fHCLK
Unit
TA = 85 °C
36 MHz
20
14
10
6
External clock (2), all
peripherals enabled
24 MHz
16 MHz
8 MHz
Supply current in
Run mode
IDD
mA
36 MHz
24 MHz
16 MHz
8 MHz
15
10
7
External clock(2) all
peripherals disabled
5
1. Based on characterization, tested in production at VDD max, fHCLK max.
2. External clock is 8 MHz and PLL is on when fHCLK > 8 MHz.
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Doc ID 15058 Rev 5
STM32F101x4, STM32F101x6
Electrical characteristics
Figure 12. Typical current consumption in Run mode versus frequency (at 3.6 V) -
code with data processing running from RAM, peripherals enabled
25
20
15
36 MHz
16 MHz
8 MHz
10
5
0
– 45°C
25 °C
70 °C
85 °C
Temperature (°C)
Figure 13. Typical current consumption in Run mode versus frequency (at 3.6 V) -
code with data processing running from RAM, peripherals disabled
16
14
12
10
36 MHz
8
6
4
2
0
16 MHz
8 MHz
– 45°C
25 °C
70 °C
85 °C
Temperature (°C)
Doc ID 15058 Rev 5
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Electrical characteristics
STM32F101x4, STM32F101x6
Table 14. Maximum current consumption in Sleep mode, code running from Flash
or RAM
Max(1)
Symbol
Parameter
Conditions
fHCLK
Unit
TA = 85 °C
36 MHz
24 MHz
16 MHz
8 MHz
14
10
7
External clock(2) all
peripherals enabled
4
Supplycurrentin
Sleep mode
IDD
mA
36 MHz
24 MHz
16 MHz
8 MHz
5
External clock(2), all
peripherals disabled
4.5
4
3
1. Based on characterization, tested in production at VDD max and fHCLK max with peripherals enabled.
2. External clock is 8 MHz and PLL is on when fHCLK > 8 MHz.
Table 15. Typical and maximum current consumptions in Stop and Standby modes
Typ(1)
Max
Symbol
Parameter
Conditions
Unit
V
DD/VBAT
V
DD/ VBAT
= 2.4 V
V
DD/VBAT TA =
= 2.0 V
= 3.3 V 85 °C(2)
Regulator in Run mode,
Low-speed and high-speed internal RC
oscillators and high-speed oscillator OFF
(no independent watchdog)
-
21.3
11.3
21.7
11.7
160
145
Supply current
in Stop mode
Regulator in Low Power mode,
Low-speed and high-speed internal RC
oscillators and high-speed oscillator OFF
(no independent watchdog)
-
IDD
Low-speed internal RC oscillator and
independent watchdog ON
µA
-
-
2.6
2.4
3.4
3.2
-
-
Supply current Low-speed internal RC oscillator ON,
in Standby
mode
independent watchdog OFF
Low-speed internal RC oscillator and
independent watchdog OFF, low-speed
oscillator and RTC OFF
-
1.7
1.1
2
3.2
1.9
Backup domain
I
Low-speed oscillator and RTC ON
0.9
1.4
DD_VBAT supply current
1. Typical values are measured at TA = 25 °C.
2. Based on characterization, not rested in production.
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STM32F101x4, STM32F101x6
Electrical characteristics
Figure 14. Typical current consumption on V
with RTC on versus temperature at different
BAT
V
values
BAT
2.5
2
1.5
1
2 V
2.4 V
3 V
0.5
0
3.6 V
–40 °C
25 °C
70 °C
85 °C
105 °C
Temperature (°C)
ai17351
Figure 15. Typical current consumption in Stop mode with regulator in Run mode versus
temperature at V = 3.3 V and 3.6 V
DD
45
40
35
30
25
20
15
10
5
3.3 V
3.6 V
0
–45 °C
25 °C
85 °C
Temperature (°C)
Doc ID 15058 Rev 5
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Electrical characteristics
STM32F101x4, STM32F101x6
Figure 16. Typical current consumption in Stop mode with regulator in Low-power mode versus
temperature at V = 3.3 V and 3.6 V
DD
30
25
20
15
10
5
3.3 V
3.6 V
0
–45 °C
25 °C
85 °C
Temperature (°C)
Figure 17. Typical current consumption in Standby mode versus temperature at V = 3.3 V and
DD
3.6 V
3.5
3
2.5
2
3.3 V
3.6 V
1.5
1
0.5
0
–45 °C
25 °C
85 °C
Temperature (°C)
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STM32F101x4, STM32F101x6
Electrical characteristics
Typical current consumption
The MCU is placed under the following conditions:
●
●
●
All I/O pins are in input mode with a static value at V or V (no load)
DD SS
All peripherals are disabled except if it is explicitly mentioned
The Flash access time is adjusted to f
wait state from 24 to 36 MHz)
frequency (0 wait state from 0 to 24 MHz, 1
HCLK
●
●
Prefetch is on (reminder: this bit must be set before clock setting and bus prescaling)
When the peripherals are enabled f = f , f = f , f
=
HCLK/2 ADCCLK
PCLK1
HCLK/4 PCLK2
f
/4
PCLK2
The parameters given in Table 16 are derived from tests performed under the ambient
temperature and V supply voltage conditions summarized in Table 8.
DD
Table 16. Typical current consumption in Run mode, code with data processing
running from Flash
Typ(1)
Typ(1)
Symbol Parameter
Conditions
fHCLK
Unit
All peripherals
enabled(2)
All peripherals
disabled
36 MHz
24 MHz
16 MHz
8 MHz
17.2
11.2
8.1
5
13.8
8.9
6.6
4.2
2.6
1.8
1.4
1.2
1
External
clock(3)
4 MHz
3
2 MHz
2
1 MHz
1.5
1.2
1.05
16.5
10.5
7.4
4.3
2.4
1.5
1
500 kHz
125 kHz
36 MHz
24 MHz
16 MHz
8 MHz
Supply
IDD
current in
mA
13.1
8.2
5.9
3.6
2
Run mode
Running on
high speed
internal RC
(HSI), AHB
prescaler
used to
reduce the
frequency
4 MHz
2 MHz
1.3
0.9
0.65
0.45
1 MHz
500 kHz
125 kHz
0.7
0.5
1. Typical values are measures at TA = 25 °C, VDD = 3.3 V.
2. Add an additional power consumption of 0.8 mA per ADC for the analog part. In applications, this
consumption occurs only while the ADC is on (ADON bit is set in the ADC_CR2 register).
3. External clock is 8 MHz and PLL is on when fHCLK > 8 MHz.
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Electrical characteristics
STM32F101x4, STM32F101x6
Table 17. Typical current consumption in Sleep mode, code running from Flash or
RAM
Typ(1)
Typ(1)
Symbol Parameter
Conditions
fHCLK
Unit
All peripherals All peripherals
enabled(2)
disabled
36 MHz
24 MHz
16 MHz
8 MHz
6.7
4.8
3.4
2
3.1
2.3
1.8
1.2
External clock(3)
4 MHz
1.5
1.25
1.1
1.05
1
1.1
2 MHz
1
1 MHz
0.98
0.96
0.95
2.5
500 kHz
125 kHz
36 MHz
24 MHz
16 MHz
8 MHz
Supply
IDD
current in
mA
6.1
4.2
2.8
1.4
0.9
0.7
0.55
0.48
0.4
Sleep mode
1.7
1.2
Running on High
Speed Internal RC
(HSI), AHB
prescaler used to
reduce the
0.55
0.5
4 MHz
2 MHz
0.45
0.42
0.4
frequency
1 MHz
500 kHz
125 kHz
0.38
1. Typical values are measures at TA = 25 °C, VDD = 3.3 V.
2. Add an additional power consumption of 0.8 mA per ADC for the analog part. In applications, this
consumption occurs only while the ADC is on (ADON bit is set in the ADC_CR2 register).
3. External clock is 8 MHz and PLL is on when fHCLK > 8 MHz.
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STM32F101x4, STM32F101x6
Electrical characteristics
On-chip peripheral current consumption
The current consumption of the on-chip peripherals is given in Table 18. The MCU is placed
under the following conditions:
●
●
●
all I/O pins are in input mode with a static value at V or V (no load)
DD SS
all peripherals are disabled unless otherwise mentioned
the given value is calculated by measuring the current consumption
–
–
with all peripherals clocked off
with only one peripheral clocked on
●
ambient operating temperature and V supply voltage conditions summarized in
DD
Table 5.
Table 18. Peripheral current consumption
Peripheral
Typical consumption at 25 °C
Unit
TIM2
0.6
0.6
TIM3
APB1
USART2
0.21
0.18
0.21
0.21
0.21
0.21
1.4
I2C
GPIO A
GPIO B
GPIO C
mA
APB2
GPIO D
ADC(1)
SPI
0.24
0.35
USART1
1. Specific conditions for ADC: fHCLK = 28 MHz, fAPB1 = fHCLK/2, fAPB2 = fHCLK, fADCCLK = fAPB2/2, ADON bit
in the ADC_CR2 register is set to 1.
5.3.6
External clock source characteristics
High-speed external user clock generated from an external source
The characteristics given in Table 19 result from tests performed using an high-speed
external clock source, and under the ambient temperature and supply voltage conditions
summarized in Table 8.
Doc ID 15058 Rev 5
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Electrical characteristics
STM32F101x4, STM32F101x6
Table 19. High-speed external user clock characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
User external clock source
frequency(1)
fHSE_ext
1
8
25
MHz
VHSEH
VHSEL
tw(HSE)
OSC_IN input pin high level voltage
OSC_IN input pin low level voltage
0.7VDD
VSS
VDD
V
0.3VDD
OSC_IN high or low time(1)
OSC_IN rise or fall time(1)
5
tw(HSE)
ns
tr(HSE)
tf(HSE)
20
Cin(HSE) OSC_IN input capacitance(1)
5
pF
%
DuCy(HSE) Duty cycle
45
55
1
IL
OSC_IN Input leakage current
VSS ≤ VIN ≤ VDD
µA
1. Guaranteed by design, not tested in production.
Low-speed external user clock generated from an external source
The characteristics given in Table 20 result from tests performed using an low-speed
external clock source, and under the ambient temperature and supply voltage conditions
summarized in Table 8.
Table 20. Low-speed external user clock characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
User external clock source
frequency(1)
fLSE_ext
32.768
1000
kHz
OSC32_IN input pin high level
voltage
VLSEH
VLSEL
0.7VDD
VSS
VDD
V
OSC32_IN input pin low level
voltage
0.3VDD
tw(LSE)
tw(LSE)
OSC32_IN high or low time(1)
OSC32_IN rise or fall time(1)
450
ns
tr(LSE)
tf(LSE)
50
Cin(LSE) OSC32_IN input capacitance(1)
5
pF
%
DuCy(LSE) Duty cycle
30
70
1
IL
OSC32_IN Input leakage current VSS ≤ VIN ≤ VDD
µA
1. Guaranteed by design, not tested in production.
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STM32F101x4, STM32F101x6
Electrical characteristics
Figure 18. High-speed external clock source AC timing diagram
V
HSEH
90%
10%
V
HSEL
t
t
t
W(HSE)
t
t
W(HSE)
r(HSE)
f(HSE)
T
HSE
f
HSE_ext
External
clock source
I
L
OSC _IN
STM32F10xxx
ai14127b
Figure 19. Low-speed external clock source AC timing diagram
V
LSEH
90%
10%
V
LSEL
t
t
t
W(LSE)
t
t
W(LSE)
r(LSE)
f(LSE)
T
LSE
f
LSE_ext
External
clock source
I
L
OSC32_IN
STM32F10xxx
ai14140c
High-speed external clock generated from a crystal/ceramic resonator
The high-speed external (HSE) clock can be supplied with a 4 to 16 MHz crystal/ceramic
resonator oscillator. All the information given in this paragraph are based on characterization
results obtained with typical external components specified in Table 21. In the application,
the resonator and the load capacitors have to be placed as close as possible to the oscillator
pins in order to minimize output distortion and startup stabilization time. Refer to the crystal
resonator manufacturer for more details on the resonator characteristics (frequency,
package, accuracy).
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Electrical characteristics
STM32F101x4, STM32F101x6
(1)(2)
Table 21. HSE 4-16 MHz oscillator characteristics
Symbol Parameter Conditions
fOSC_IN Oscillator frequency
Min
Typ
Max Unit
4
8
16
MHz
RF
Feedback resistor
200
kΩ
Recommended load capacitance
versus equivalent serial
C
RS = 30 Ω
30
pF
resistance of the crystal (RS)(3)
VDD = 3.3 V, VIN = VSS
with 30 pF load
i2
HSE driving current
1
mA
gm
Oscillator transconductance
Startup time
Startup
25
mA/V
ms
(4)
tSU(HSE)
VDD is stabilized
2
1. Resonator characteristics given by the crystal/ceramic resonator manufacturer.
2. Based on characterization, not tested in production.
3. The relatively low value of the RF resistor offers a good protection against issues resulting from use in a
humid environment, due to the induced leakage and the bias condition change. However, it is
recommended to take this point into account if the MCU is used in tough humidity conditions.
4. tSU(HSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 8 MHz
oscillation is reached. This value is measured for a standard crystal resonator and it can vary significantly
with the crystal manufacturer
For C and C , it is recommended to use high-quality external ceramic capacitors in the
L1
L2
5 pF to 25 pF range (typ.), designed for high-frequency applications, and selected to match
the requirements of the crystal or resonator (see Figure 20). C and C are usually the
L1
L2
same size. The crystal manufacturer typically specifies a load capacitance which is the
series combination of C and C . PCB and MCU pin capacitance must be included (10 pF
L1
L2
can be used as a rough estimate of the combined pin and board capacitance) when sizing
C
and C . Refer to the application note AN2867 “Oscillator design guide for ST
L1
L2
microcontrollers” available from the ST website www.st.com.
Figure 20. Typical application with an 8 MHz crystal
Resonator with
integrated capacitors
C
L1
f
OSC_IN
HSE
Bias
controlled
gain
8 MHz
resonator
R
F
STM32F10xxx
OSC_OUT
(1)
R
EXT
C
L2
ai14128b
1. REXT value depends on the crystal characteristics.
Low-speed external clock generated from a crystal/ceramic resonator
The low-speed external (LSE) clock can be supplied with a 32.768 kHz crystal/ceramic
resonator oscillator. All the information given in this paragraph are based on characterization
results obtained with typical external components specified in Table 22. In the application,
the resonator and the load capacitors have to be placed as close as possible to the oscillator
pins in order to minimize output distortion and startup stabilization time. Refer to the crystal
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STM32F101x4, STM32F101x6
Electrical characteristics
resonator manufacturer for more details on the resonator characteristics (frequency,
package, accuracy).
(1) (2)
Table 22. LSE oscillator characteristics (fLSE = 32.768 kHz)
Symbol
Parameter
Feedback resistor
Conditions
Min
Typ
Max
Unit
RF
5
MΩ
Recommended load capacitance
versus equivalent serial
C
RS = 30 KΩ
15
pF
resistance of the crystal (RS)
V
DD = 3.3 V
I2
LSE driving current
1.4
µA
VIN = VSS
gm
Oscillator transconductance
5
µA/V
TA = 50 °C
TA = 25 °C
TA = 10 °C
TA = 0 °C
1.5
2.5
4
6
VDD is
stabilized
(3)
tSU(LSE)
Startup time
s
TA = -10 °C
TA = -20 °C
TA = -30 °C
TA = -40 °C
10
17
32
60
1. Based on characterization, not tested in production.
2. Refer to the note and caution paragraphs below the table, and to the application note AN2867 “Oscillator design guide for
ST microcontrollers”.
3. tSU(LSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 32.768 kHz oscillation is
reached. This value is measured for a standard crystal and it can vary significantly with the crystal manufacturer
Note:
For C and C it is recommended to use high-quality ceramic capacitors in the 5 pF to
L1 L2
15 pF range selected to match the requirements of the crystal or resonator. C and C are
L1
L2,
usually the same size. The crystal manufacturer typically specifies a load capacitance which
is the series combination of C and C .
L1
L2
Load capacitance C has the following formula: C = C x C / (C + C ) + C where
L
L
L1
L2
L1
L2
stray
C
is the pin capacitance and board or trace PCB-related capacitance. Typically, it is
stray
between 2 pF and 7 pF.
Caution:
To avoid exceeding the maximum value of C and C (15 pF) it is strongly recommended
L1
L2
to use a resonator with a load capacitance C ≤ 7 pF. Never use a resonator with a load
L
capacitance of 12.5 pF.
Example: if you choose a resonator with a load capacitance of C = 6 pF, and C
= 2 pF,
L
stray
then C = C = 8 pF.
L1
L2
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Electrical characteristics
Figure 21. Typical application with a 32.768 kHz crystal
STM32F101x4, STM32F101x6
Resonator with
integrated capacitors
C
L1
f
OSC32_IN
LSE
Bias
controlled
gain
32.768 KHz
resonator
R
F
STM32F10xxx
OSC32_OUT
C
L2
ai14129b
5.3.7
Internal clock source characteristics
The parameters given in Table 23 are derived from tests performed under the ambient
temperature and V supply voltage conditions summarized in Table 8.
DD
High-speed internal (HSI) RC oscillator
(1)
Table 23. HSI oscillator characteristics
Symbol
Parameter
Frequency
Conditions
Min
Typ
Max Unit
fHSI
8
MHz
DuCy(HSI) Duty cycle
45
55
%
%
User-trimmed with the RCC_CR
register(2)
1(3)
TA = –40 to 105 °C
–2
2.5
2.2
2
%
%
%
%
Accuracy of the HSI
oscillator
ACCHSI
TA = –10 to 85 °C
Factory-
–1.5
–1.3
–1.1
calibrated(4)
TA = 0 to 70 °C
TA = 25 °C
1.8
HSI oscillator
startup time
(4)
tsu(HSI)
1
2
µs
HSI oscillator power
consumption
(4)
IDD(HSI)
80
100
µA
1. VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified.
2. Refer to application note AN2868 “STM32F10xxx internal RC oscillator (HSI) calibration” available from
the ST website www.st.com.
3. Guaranteed by design, not tested in production.
4. Based on characterization, not tested in production.
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STM32F101x4, STM32F101x6
Electrical characteristics
Low-speed internal (LSI) RC oscillator
(1)
Table 24. LSI oscillator characteristics
Symbol
Parameter
Min
Typ
Max
Unit
(2)
fLSI
Frequency
30
40
60
85
kHz
µs
(3)
tsu(LSI)
LSI oscillator startup time
(3)
IDD(LSI)
LSI oscillator power consumption
0.65
1.2
µA
1. VDD = 3 V, TA = –40 to 85 °C unless otherwise specified.
2. Based on characterization, not tested in production.
3. Guaranteed by design, not tested in production.
Wakeup time from low-power mode
The wakeup times given in Table 25 are measured on a wakeup phase with an 8-MHz HSI
RC oscillator. The clock source used to wake up the device depends from the current
operating mode:
●
Stop or Standby mode: the clock source is the RC oscillator
●
Sleep mode: the clock source is the clock that was set before entering Sleep mode.
All timings are derived from tests performed under the ambient temperature and V supply
DD
voltage conditions summarized in Table 8.
Table 25. Low-power mode wakeup timings
Symbol
Parameter
Wakeup from Sleep mode
Typ
Unit
(1)
1.8
µs
tWUSLEEP
Wakeup from Stop mode (regulator in run mode)
Wakeup from Stop mode (regulator in low-power mode)
Wakeup from Standby mode
3.6
5.4
50
(1)
µs
µs
tWUSTOP
(1)
tWUSTDBY
1. The wakeup times are measured from the wakeup event to the point at which the user application code
reads the first instruction.
5.3.8
PLL characteristics
The parameters given in Table 26 are derived from tests performed under the ambient
temperature and V supply voltage conditions summarized in Table 8.
DD
Table 26. PLL characteristics
Value
Symbol
Parameter
Unit
Min(1)
Typ
Max(1)
PLL input clock(2)
1
8.0
25
60
36
MHz
%
fPLL_IN
fPLL_OUT
PLL input clock duty cycle
PLL multiplier output clock
40
16
MHz
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Electrical characteristics
Table 26. PLL characteristics
Symbol Parameter
STM32F101x4, STM32F101x6
Value
Unit
Min(1)
Typ
Max(1)
tLOCK
Jitter
1. Based on device characterization, not tested in production.
2. Take care of using the appropriate multiplier factors so as to have PLL input clock values compatible with
PLL lock time
200
µs
Cycle-to-cycle jitter
300
ps
the range defined by fPLL_OUT
.
5.3.9
Memory characteristics
Flash memory
The characteristics are given at T = –40 to 85 °C unless otherwise specified.
A
Table 27. Flash memory characteristics
Symbol
Parameter
Conditions
Min(1) Typ Max(1) Unit
tprog
tERASE
tME
16-bit programming time
Page (1 KB) erase time
Mass erase time
TA = –40 to +85 °C
TA = –40 to +85 °C
TA = –40 to +85 °C
40
20
20
52.5
70
40
40
µs
ms
ms
Read mode
fHCLK = 36 MHz with 1 wait
state, VDD = 3.3 V
20
5
mA
mA
IDD
Supply current
Write / Erase modes
fHCLK = 36 MHz, VDD = 3.3 V
Power-down mode / Halt,
VDD = 3.0 to 3.6 V
50
µA
V
Vprog
Programming voltage
2
3.6
1. Guaranteed by design, not tested in production.
Table 28. Flash memory endurance and data retention
Value
Typ
Symbol
NEND Endurance
tRET Data retention
Parameter
Conditions
Unit
Min(1)
Max
TA = –40 °C to 85 °C
TA = 85 °C, 1 kcycle(2)
TA = 55 °C, 10 kcycle(2)
kcycles
Years
10
30
20
1. Based on characterization not tested in production.
2. Cycling performed over the whole temperature range.
5.3.10
EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
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STM32F101x4, STM32F101x6
Electrical characteristics
Functional EMS (Electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports). the
device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
●
Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
●
FTB: A Burst of Fast Transient voltage (positive and negative) is applied to V and
DD
V
through a 100 pF capacitor, until a functional disturbance occurs. This test is
SS
compliant with the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed.
The test results are given in Table 29. They are based on the EMS levels and classes
defined in application note AN1709.
Table 29. EMS characteristics
Symbol
Parameter
Conditions
Level/Class
VDD = 3.3 V, TA = +25 °C,
fHCLK= 36 MHz
conforms to IEC 61000-4-2
Voltage limits to be applied on any I/O pin to
induce a functional disturbance
VFESD
2B
Fast transient voltage burst limits to be
VDD = 3.3 V, TA = +25 °C,
VEFTB
applied through 100 pF on VDD and VSS pins fHCLK = 36 MHz
to induce a functional disturbance conforms to IEC 61000-4-4
4A
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and pre
qualification tests in relation with the EMC level requested for his application.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
●
●
●
Corrupted program counter
Unexpected reset
Critical Data corruption (control registers...)
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second. To complete these trials, ESD stress can be applied directly on the device, over the
range of specification values. When unexpected behavior is detected, the software can be
hardened to prevent unrecoverable errors occurring (see application note AN1015).
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Electrical characteristics
STM32F101x4, STM32F101x6
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device is monitored while a simple application is
executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with
IEC61967-2 standard which specifies the test board and the pin loading.
Table 30. EMI characteristics
Max vs. [fHSE/fHCLK
]
Monitored
Symbol Parameter
Conditions
Unit
frequency band
8/36 MHz
0.1 MHz to 30 MHz
30 MHz to 130 MHz
130 MHz to 1GHz
SAE EMI Level
7
8
VDD = 3.3 V, TA = 25 °C,
LQFP100 package
compliant with
dBµV
-
SEMI
Peak level
13
3.5
IEC 61967-2
5.3.11
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the JESD22-A114/C101 standard.
Table 31. ESD absolute maximum ratings
Maximum
Symbol
Ratings
Conditions
Class
Unit
value(1)
Electrostatic discharge
voltage (human body model) conforming to JESD22-A114
TA = +25 °C
VESD(HBM)
2
II
2000
V
Electrostatic discharge TA = +25 °C
voltage (charge device model) conforming to JESD22-C101
VESD(CDM)
500
1. Based on characterization results, not tested in production.
Static latch-up
Two complementary static tests are required on six parts to assess the latch-up
performance:
●
A supply overvoltage is applied to each power supply pin
●
A current injection is applied to each input, output and configurable I/O pin
These tests are compliant with EIA/JESD 78 IC latch-up standard.
Table 32. Electrical sensitivities
Symbol
Parameter
Conditions
Class
II level A
LU
Static latch-up class
TA = +85 °C conforming to JESD78A
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STM32F101x4, STM32F101x6
Electrical characteristics
5.3.12
I/O current injection characteristics
As a general rule, current injection to the I/O pins, due to external voltage below V or
SS
above V (for standard, 3 V-capable I/O pins) should be avoided during normal product
DD
operation. However, in order to give an indication of the robustness of the microcontroller in
cases when abnormal injection accidentally happens, susceptibility tests are performed on a
sample basis during device characterization.
Functional susceptibilty to I/O current injection
While a simple application is executed on the device, the device is stressed by injecting
current into the I/O pins programmed in floating input mode. While current is injected into the
I/O pin, one at a time, the device is checked for functional failures.
The failure is indicated by an out of range parameter: ADC error above a certain limit (>5
LSB TUE), out of spec current injection on adjacent pins or other functional failure (for
example reset, oscillator frequency deviation).
The test results are given in Table 33
Table 33. I/O current injection susceptibility
Functional susceptibility
Symbol
Description
Unit
Negative
injection
Positive
injection
Injected current on OSC_IN32,
OSC_OUT32, PA4, PA5, PC13
-0
+0
IINJ
mA
Injected current on all FT pins
Injected current on any other pin
-5
-5
+0
+5
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Electrical characteristics
STM32F101x4, STM32F101x6
5.3.13
I/O port characteristics
General input/output characteristics
Unless otherwise specified, the parameters given in Table 34 are derived from tests
performed under the conditions summarized in Table 8. All I/Os are CMOS and TTL
compliant.
Table 34. I/O static characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Standard IO input low
level voltage
–0.3
0.28*(VDD-2 V)+0.8 V
V
VIL
IO FT(1) input low level
voltage
–0.3
0.32*(VDD-2V)+0.75 V
VDD+0.3
V
V
Standard IO input high
level voltage
0.41*(VDD-2 V)+1.3 V
VIH
IO FT(1) input high level
voltage
VDD > 2 V
5.5
5.2
0.42*(VDD-2 V)+1 V
200
V
VDD ≤ 2 V
Standard IO Schmitt
trigger voltage
hysteresis(2)
mV
mV
Vhys
IO FT Schmitt trigger
voltage hysteresis(2)
(3)
5% VDD
VSS ≤ VIN ≤ VDD
Standard I/Os
±1
3
Ilkg
Input leakage current (4)
µA
VIN = 5 V
I/O FT
Weak pull-up equivalent
resistor(5)
RPU
VIN = VSS
VIN = VDD
30
30
40
50
50
kΩ
Weak pull-down
RPD
CIO
40
5
kΩ
equivalent resistor(5)
I/O pin capacitance
pF
1. FT = Five-volt tolerant. In order to sustain a voltage higher than VDD+0.3 the internal pull-up/pull-down resistors must be
disabled.
2. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization, not tested in production.
3. With a minimum of 100 mV.
4. Leakage could be higher than max. if negative current is injected on adjacent pins.
5. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This
PMOS/NMOS contribution to the series resistance is minimum (~10% order).
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STM32F101x4, STM32F101x6
Electrical characteristics
All I/Os are CMOS and TTL compliant (no software configuration required). Their
characteristics cover more than the strict CMOS-technology or TTL parameters. The
coverage of these requirements is shown in Figure 22 and Figure 23 for standard I/Os, and
in Figure 24 and Figure 25 for 5 V tolerant I/Os.
Figure 22. Standard I/O input characteristics - CMOS port
V
/V (V)
IH IL
1.96
1.25
1.71
1.08
1.71
1.08
Input range
not guaranteed
1.59
VIHmin
1.3
1
VILmax
0.8
0.7
V
(V)
DD
2
2.7
3
3.3
3.6
ai17277b
Figure 23. Standard I/O input characteristics - TTL port
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44, REQUIREMENTS
6
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6
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Doc ID 15058 Rev 5
53/79
Electrical characteristics
STM32F101x4, STM32F101x6
Figure 24. 5 V tolerant I/O input characteristics - CMOS port
6
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)( ),
ꢀꢅꢆꢁ
ꢀꢅꢌꢌ
ꢀꢅꢀꢆ
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NOT GUARANTEED
ꢀ
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ꢀꢅꢊꢁ
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Figure 25. 5 V tolerant I/O input characteristics - TTL port
6
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44, REQUIREMENT 6 ꢍꢂ6
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Doc ID 15058 Rev 5
STM32F101x4, STM32F101x6
Electrical characteristics
Output driving current
The GPIOs (general-purpose inputs/outputs) can sink or source up to 8 mA, and sink or
source up to 20 mA (with a relaxed V /V ).
OL OH
In the user application, the number of I/O pins which can drive current must be limited to
respect the absolute maximum rating specified in Section 5.2:
●
The sum of the currents sourced by all the I/Os on V
plus the maximum Run
DD,
consumption of the MCU sourced on V
cannot exceed the absolute maximum rating
DD,
I
(see Table 6).
VDD
●
The sum of the currents sunk by all the I/Os on V plus the maximum Run
SS
consumption of the MCU sunk on V cannot exceed the absolute maximum rating
SS
I
(see Table 6).
VSS
Output voltage levels
Unless otherwise specified, the parameters given in Table 35 are derived from tests
performed under the ambient temperature and V supply voltage conditions summarized
DD
in Table 8. All I/Os are CMOS and TTL compliant.
Table 35. Output voltage characteristics
Symbol
Parameter
Conditions
Min
Max Unit
Output Low level voltage for an I/O pin
when 8 pins are sunk at the same time
(1)
CMOS port(2),,
IIO = +8 mA,
2.7 V < VDD < 3.6 V
0.4
V
VOL
Output High level voltage for an I/O pin
when 8 pins are sourced at the same time
(3)
VDD–0.4
VOH
Output low level voltage for an I/O pin
when 8 pins are sunk at the same time
(1)
TTL port(2)
IIO = +8 mA
0.4
V
VOL
Output high level voltage for an I/O pin
when 8 pins are sourced at the same time
(3)
2.7 V < VDD < 3.6 V
2.4
VOH
Output low level voltage for an I/O pin
when 8 pins are sunk at the same time
(1)
1.3
V
VOL
IIO = +20 mA(4)
2.7 V < VDD < 3.6 V
Output high level voltage for an I/O pin
when 8 pins are sourced at the same time
(3)
VDD–1.3
VOH
Output low level voltage for an I/O pin
when 8 pins are sunk at the same time
(1)
0.4
V
VOL
IIO = +6 mA(4)
2 V < VDD < 2.7 V
Output high level voltage for an I/O pin
when 8 pins are sourced at the same time
(3)
VDD–0.4
VOH
1. The IIO current sunk by the device must always respect the absolute maximum rating specified in Table 6
and the sum of IIO (I/O ports and control pins) must not exceed IVSS
.
2. TTL and CMOS outputs are compatible with JEDEC standards JESD36 and JESD52.
3. The IIO current sourced by the device must always respect the absolute maximum rating specified in
Table 6 and the sum of IIO (I/O ports and control pins) must not exceed IVDD
.
4. Based on characterization data, not tested in production.
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Electrical characteristics
STM32F101x4, STM32F101x6
Input/output AC characteristics
The definition and values of input/output AC characteristics are given in Figure 26 and
Table 36, respectively.
Unless otherwise specified, the parameters given in Table 36 are derived from tests
performed under the ambient temperature and V supply voltage conditions summarized
DD
in Table 8.
(1)
Table 36. I/O AC characteristics
MODEx
[1:0] bit Symbol
Parameter
Conditions
Max Unit
value(1)
fmax(IO)out Maximum frequency(2)
CL = 50 pF, VDD = 2 V to 3.6 V
2
MHz
ns
Output high to low level fall
tf(IO)out
time
125(3)
10
01
CL = 50 pF, VDD = 2 V to 3.6 V
CL= 50 pF, VDD = 2 V to 3.6 V
CL= 50 pF, VDD = 2 V to 3.6 V
Output low to high level rise
tr(IO)out
time
125(3)
10
fmax(IO)out Maximum frequency(2)
MHz
ns
Output high to low level fall
tf(IO)out
time
25(3)
Output low to high level rise
tr(IO)out
time
25(3)
CL= 30 pF, VDD = 2.7 V to 3.6 V
CL = 50 pF, VDD = 2.7 V to 3.6 V
CL = 50 pF, VDD = 2 V to 2.7 V
50
30
20
MHz
MHz
MHz
Fmax(IO)out Maximum Frequency(2)
CL = 30 pF, VDD = 2.7 V to 3.6 V 5(3)
CL = 50 pF, VDD = 2.7 V to 3.6 V 8(3)
Output high to low level fall
11
tf(IO)out
time
CL = 50 pF, VDD = 2 V to 2.7 V
12(3)
ns
CL = 30 pF, VDD = 2.7 V to 3.6 V 5(3)
CL = 50 pF, VDD = 2.7 V to 3.6 V 8(3)
Output low to high level rise
tr(IO)out
time
CL = 50 pF, VDD = 2 V to 2.7 V
12(3)
Pulse width of external
tEXTIpw signals detected by the
EXTI controller
-
10
ns
1. The I/O speed is configured using the MODEx[1:0] bits. Refer to the STM32F10xxx reference manual for a
description of GPIO Port configuration register.
2. The maximum frequency is defined in Figure 26.
3. Guaranteed by design, not tested in production.
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STM32F101x4, STM32F101x6
Figure 26. I/O AC characteristics definition
Electrical characteristics
90%
10 %
50%
50%
90%
10%
t
EXTERNAL
OUTPUT
ON 50pF
t
r(IO)out
r(IO)out
T
Maximum frequency is achieved if (t + t ) ≤ 2/3)T and if the duty cycle is (45-55%)
r
f
when loaded by 50pF
ai14131
5.3.14
NRST pin characteristics
The NRST pin input driver uses CMOS technology. It is connected to a permanent pull-up
resistor, R (see Table 34).
PU
Unless otherwise specified, the parameters given in Table 37 are derived from tests
performed under the ambient temperature and V supply voltage conditions summarized
DD
in Table 8.
Table 37. NRST pin characteristics
Symbol
Parameter
Conditions Min
Typ
Max
Unit
(1)
VIL(NRST)
NRST Input low level voltage
NRST Input high level voltage
–0.5
2
0.8
V
(1)
VIH(NRST)
Vhys(NRST)
RPU
VDD+0.5
NRST Schmitt trigger voltage
hysteresis
200
40
mV
Weak pull-up equivalent resistor(2) VIN = VSS
30
50
kΩ
ns
ns
(1)
VF(NRST)
NRST Input filtered pulse
100
(1)
VNF(NRST)
NRST Input not filtered pulse
300
1. Guaranteed by design, not tested in production.
2. The pull-up is designed with a true resistance in series with a switchable PMOS. This PMOS contribution to
the series resistance must be minimum (~10% order).
Figure 27. Recommended NRST pin protection
V
DD
External
reset circuit
(1)
R
PU
(2)
Internal reset
STM32F10x
NRST
Filter
0.1 µF
ai14132d
1. The reset network protects the device against parasitic resets.
2. The user must ensure that the level on the NRST pin can go below the VIL(NRST) max level specified in
Table 37. Otherwise the reset will not be taken into account by the device.
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Electrical characteristics
STM32F101x4, STM32F101x6
5.3.15
TIM timer characteristics
The parameters given in Table 38 are guaranteed by design.
Refer to Section 5.3.12: I/O current injection characteristics for details on the input/output
alternate function characteristics (output compare, input capture, external clock, PWM
output).
(1)
Table 38. TIMx characteristics
Symbol
Parameter
Conditions
Min
1
Max
Unit
tTIMxCLK
tres(TIM)
Timer resolution time
fTIMxCLK = 36 MHz
TIMxCLK = 36 MHz
27.8
0
ns
MHz
MHz
bit
f
TIMxCLK/2
18
Timer external clock
frequency on CH1 to CH4
fEXT
f
0
ResTIM
Timer resolution
16
16-bit counter clock period
when internal clock is
selected
tTIMxCLK
1
65536
1820
tCOUNTER
fTIMxCLK = 36 MHz
fTIMxCLK = 36 MHz
0.0278
µs
tTIMxCLK
s
65536 × 65536
119.2
tMAX_COUNT
Maximum possible count
1. TIMx is used as a general term to refer to the TIM2, TIM3 and TIM4 timers.
5.3.16
Communications interfaces
I2C interface characteristics
Unless otherwise specified, the parameters given in Table 39 are derived from tests
performed under the ambient temperature, f
frequency and V supply voltage
PCLK1
DD
conditions summarized in Table 8.
2
The STM32F101xx Low-density access line I C interface meets the requirements of the
2
standard I C communication protocol with the following restrictions: t
he I/O pins SDA and
SCL are mapped to are not “true” open-drain. When configured as open-drain, the PMOS
connected between the I/O pin and V is disabled, but is still present.
DD
2
The I C characteristics are described in Table 39. Refer also to
Section 5.3.12: I/O current
for more details on the input/output alternate function characteristics
injection characteristics
(SDA and SCL)
.
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STM32F101x4, STM32F101x6
Electrical characteristics
2
Table 39. I C characteristics
Standard mode I2C(1) Fast mode I2C(1)(2)
Symbol
Parameter
Unit
Min
Max
Min
Max
tw(SCLL) SCL clock low time
tw(SCLH) SCL clock high time
tsu(SDA) SDA setup time
4.7
4.0
1.3
0.6
100
0(4)
µs
250
0(3)
th(SDA)
SDA data hold time
900(3)
300
tr(SDA)
tr(SCL)
ns
SDA and SCL rise time
1000
300
20+0.1Cb
tf(SDA)
tf(SCL)
SDA and SCL fall time
Start condition hold time
300
th(STA)
4.0
4.7
4.0
4.7
0.6
0.6
0.6
1.3
µs
Repeated Start condition setup
time
tsu(STA)
tsu(STO) Stop condition setup time
µs
µs
pF
Stop to Start condition time (bus
tw(STO:STA)
free)
Cb
Capacitive load for each bus line
400
400
Guaranteed by design, not tested in production.
1.
2. fPCLK1 must be higher than 2 MHz to achieve standard mode I2C frequencies. It must be higher than
4 MHz to achieve fast mode I2C frequencies. It must be a multiple of 10 MHz to reach the 400 kHz
maximum I2C fast mode clock.
The maximum hold time of the Start condition has only to be met if the interface does not stretch the low
period of SCL signal.
3.
The device must internally provide a hold time of at least 300 ns for the SDA signal in order to bridge the
undefined region of the falling edge of SCL.
4.
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Electrical characteristics
STM32F101x4, STM32F101x6
2
(1)
Figure 28. I C bus AC waveforms and measurement circuit
V
V
DD
DD
STM32F10x
SDA
4.7kΩ
4.7kΩ
100 Ω
100 Ω
I²C bus
SCL
Start repeated
Start
Start
t
su(STA)
SDA
t
t
t
su(SDA)
f(SDA)
r(SDA)
t
su(STO:STA)
Stop
t
t
t
h(SDA)
h(STA)
w(SCLL)
SCL
t
t
t
t
f(SCL)
su(STO)
w(SCLH)
r(SCL)
ai14133d
1. Measurement points are done at CMOS levels: 0.3VDD and 0.7VDD
.
(1)(2)
Table 40. SCL frequency (f
fSCL (kHz)
= MHz, VDD = 3.3 V)
PCLK1
I2C_CCR value
RP = 4.7 kΩ
400
300
200
100
50
0x801E
0x8028
0x803C
0x00B4
0x0168
0x0384
20
1. RP = External pull-up resistance, fSCL = I2C speed,
2. For speeds around 200 kHz, the tolerance on the achieved speed is of ±5%. For other speed ranges, the
tolerance on the achieved speed ±2%. These variations depend on the accuracy of the external
components used to design the application.
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STM32F101x4, STM32F101x6
Electrical characteristics
SPI interface characteristics
Unless otherwise specified, the parameters given in Table 41 are derived from tests
performed under the ambient temperature, f
frequency and V supply voltage
PCLKx
DD
conditions summarized in Table 8.
Refer to Section 5.3.12: I/O current injection characteristics for more details on the
input/output alternate function characteristics (NSS, SCK, MOSI, MISO).
Table 41. SPI characteristics
Symbol
Parameter
Conditions
Master mode
Min
Max
Unit
0
0
18
18
fSCK
1/tc(SCK)
SPI clock frequency
MHz
Slave mode
tr(SCK)
tf(SCK)
SPI clock rise and fall
time
Capacitive load: C = 30 pF
8
(1)
tsu(NSS)
NSS setup time
NSS hold time
Slave mode
Slave mode
4 tPCLK
73
(1)
th(NSS)
(1)
tw(SCKH)
tw(SCKL)
Master mode, fPCLK = 36 MHz,
presc = 4
SCK high and low time
50
1
60
(1)
Data input setup time
Master mode
(1)
tsu(MI)
tsu(SI)
th(MI)
SPI
SPI
Data input setup time
Slave mode
(1)
1
Data input hold time
Master mode
(1)
1
Data input hold time
Slave mode
(1)
th(SI)
3
Slave mode, fPCLK = 36 MHz,
presc = 4
ns
0
55
(1)(2)
ta(SO)
Data output access time
Slave mode, fPCLK = 24 MHz
0
4 tPCLK
(1)(3)
tdis(SO)
Data output disable time Slave mode
10
(1)
(1)
(1)
(1)
tv(SO)
tv(MO)
th(SO)
th(MO)
Data output valid time
Data output valid time
Slave mode (after enable edge)
25
3
Master mode (after enable
edge)
Slave mode (after enable edge)
25
4
Data output hold time
Master mode (after enable
edge)
1. Based on characterization, not tested in production.
2. Min time is for the minimum time to drive the output and the max time is for the maximum time to validate
the data.
3. Min time is for the minimum time to invalidate the output and the max time is for the maximum time to put
the data in Hi-Z
Doc ID 15058 Rev 5
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Electrical characteristics
STM32F101x4, STM32F101x6
Figure 29. SPI timing diagram - slave mode and CPHA = 0
NSS input
t
c(SCK)
t
t
h(NSS)
SU(NSS)
CPHA=0
CPOL=0
t
t
w(SCKH)
w(SCKL)
CPHA=0
CPOL=1
t
t
t
t
t
t
dis(SO)
r(SCK)
f(SCK)
v(SO)
a(SO)
h(SO)
MISO
OUT PUT
MSB O UT
BI T6 OUT
BIT1 IN
LSB OUT
t
su(SI)
MOSI
M SB IN
LSB IN
INPUT
t
h(SI)
ai14134c
(1)
Figure 30. SPI timing diagram - slave mode and CPHA = 1
NSS input
t
t
t
SU(NSS)
t
c(SCK)
h(NSS)
CPHA=1
CPOL=0
w(SCKH)
CPHA=1
CPOL=1
t
w(SCKL)
t
t
r(SCK)
f(SCK)
t
t
t
v(SO)
h(SO)
dis(SO)
t
a(SO)
MISO
OUT PUT
MSB O UT
BI T6 OUT
LSB OUT
t
t
su(SI)
h(SI)
MOSI
M SB IN
BIT1 IN
LSB IN
INPUT
ai14135
1. Measurement points are done at CMOS levels: 0.3VDD and 0.7VDD
.
62/79
Doc ID 15058 Rev 5
STM32F101x4, STM32F101x6
Electrical characteristics
(1)
Figure 31. SPI timing diagram - master mode
High
NSS input
t
c(SCK)
CPHA=0
CPOL=0
CPHA=0
CPOL=1
CPHA=1
CPOL=0
CPHA=1
CPOL=1
t
t
t
t
w(SCKH)
w(SCKL)
r(SCK)
f(SCK)
t
su(MI)
MISO
INPUT
MSBIN
BIT6 IN
LSB IN
t
h(MI)
MOSI
M SB OUT
BIT1 OUT
LSB OUT
OUTUT
t
t
v(MO)
h(MO)
ai14136
1. Measurement points are done at CMOS levels: 0.3VDD and 0.7VDD
.
Doc ID 15058 Rev 5
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Electrical characteristics
STM32F101x4, STM32F101x6
5.3.17
12-bit ADC characteristics
Unless otherwise specified, the parameters given in Table 42 are derived from tests
performed under the ambient temperature, f
frequency and V
supply voltage
PCLK2
DDA
conditions summarized in Table 8.
Note:
It is recommended to perform a calibration after each power-up.
Table 42. ADC characteristics
Symbol
Parameter
Power supply
Conditions
Min
Typ
Max
Unit
VDDA
fADC
2.4
0.6
3.6
14
V
ADC clock frequency
Sampling rate
MHz
(1)
0.05
1
MHz
fS
fADC = 14 MHz
823
17
kHz
(1)
External trigger frequency
Conversion voltage range(2)
fTRIG
1/fADC
0 (VSSA or VREF-
tied to ground)
VAIN
VREF+
V
See Equation 1 and
Table 43 for details
(1)
RAIN
External input impedance
Sampling switch resistance
50
1
kΩ
kΩ
pF
(1)
RADC
Internal sample and hold
capacitor
(1)
8
CADC
fADC = 14 MHz
fADC = MHz
5.9
83
µs
1/fADC
µs
(1)
Calibration time
tCAL
0.214
3(3)
Injection trigger conversion
latency
(1)
tlat
1/fADC
µs
fADC = 14 MHz
0.143
2(3)
Regular trigger conversion
latency
(1)
tlatr
1/fADC
µs
0.107
1.5
0
17.1
239.5
1
(1)
Sampling time
Power-up time
fADC = 14 MHz
fADC = 14 MHz
tS
1/fADC
µs
(1)
tSTAB
0
1
18
µs
Total conversion time
(including sampling time)
(1)
tCONV
14 to 252 (tS for sampling +12.5 for
successive approximation)
1/fADC
1. Guaranteed by design, not tested in production.
2. VREF+ is internally connected to VDDA and VREF- is be internally connected to VSSA
3. For external triggers, a delay of 1/fPCLK2 must be added to the latency specified in Table 42.
.
64/79
Doc ID 15058 Rev 5
STM32F101x4, STM32F101x6
Equation 1: R
Electrical characteristics
max formula:
AIN
TS
RAIN < ------------------------------------------------------------- – RADC
fADC × CADC × ln(2N + 2
)
The formula above (Equation 1) is used to determine the maximum external impedance allowed for an
error below 1/4 of LSB. Here N = 12 (from 12-bit resolution).
(1)
Table 43.
R
max for f
= 14 MHz
AIN
ADC
Ts (cycles)
tS (µs)
RAIN max (kΩ)
1.5
0.11
0.4
7.5
0.54
0.96
2.04
2.96
3.96
5.11
17.1
5.9
13.5
28.5
41.5
55.5
71.5
239.5
11.4
25.2
37.2
50
NA
NA
1. Guaranteed by design, not tested in production.
(1) (2)
Table 44. ADC accuracy - limited test conditions
Symbol
Parameter
Test conditions
Typ
Max(3)
Unit
ET
EO
EG
ED
EL
Total unadjusted error
Offset error
1.3
1
2
fPCLK2 = 28 MHz,
fADC = 14 MHz, RAIN < 10 kΩ,
VDDA = 3 V to 3.6 V
TA = 25 °C
1.5
1.5
1
Gain error
0.5
0.7
0.8
LSB
Differential linearity error
Integral linearity error
Measurements made after
ADC calibration
1.5
1. ADC DC accuracy values are measured after internal calibration.
2. ADC Accuracy vs. Negative Injection Current: Injecting negative current on any of the standard (non-
robust) analog input pins should be avoided as this significantly reduces the accuracy of the conversion
being performed on another analog input. It is recommended to add a Schottky diode (pin to ground) to
standard analog pins which may potentially inject negative current.
Any positive injection current within the limits specified for IINJ(PIN) and ΣIINJ(PIN) in Section 5.3.12 does not
affect the ADC accuracy.
3. Based on characterization, not tested in production.
Doc ID 15058 Rev 5
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Electrical characteristics
STM32F101x4, STM32F101x6
(1) (2) (3)
Table 45. ADC accuracy
Symbol
Parameter
Test conditions
Typ
Max(4)
Unit
ET
EO
EG
ED
EL
Total unadjusted error
Offset error
2
5
2.5
3
fPCLK2 = 28 MHz,
fADC = 14 MHz, RAIN < 10 kΩ,
VDDA = 2.4 V to 3.6 V
1.5
1.5
1
Gain error
LSB
Measurements made after
ADC calibration
Differential linearity error
Integral linearity error
2
1.5
3
1. ADC DC accuracy values are measured after internal calibration.
2. Better performance could be achieved in restricted VDD, frequency and temperature ranges.
3. ADC Accuracy vs. Negative Injection Current: Injecting negative current on any of the standard (non-
robust) analog input pins should be avoided as this significantly reduces the accuracy of the conversion
being performed on another analog input. It is recommended to add a Schottky diode (pin to ground) to
standard analog pins which may potentially inject negative current.
Any positive injection current within the limits specified for IINJ(PIN) and ΣIINJ(PIN) in Section 5.3.12 does not
affect the ADC accuracy.
4. Based on characterization, not tested in production.
Figure 32. ADC accuracy characteristics
VDDA
[1LSBIDEAL
=
4096
EG
(1) Example of an actual transfer curve
(2) The ideal transfer curve
4095
4094
4093
(3) End point correlation line
(2)
ET=Total u nadjusted error: maximum deviation
ET
between the actual and the ideal transfer curves.
(3)
7
6
5
4
3
2
1
EO=Offset error: deviation between the first actual
transition and the first ideal one.
(1)
EG=Gain error: deviation between the last ideal
transition and the last actual one.
EO
EL
ED=Differential linearity error: maximum deviation
between actual steps and the ideal one.
EL=Integral linearity error: maximum deviation
between any actual transition and the end point
correlation line.
ED
1 LSBIDEAL
0
1
2
3
4
5
6
7
4093 4094 4095 4096
VDDA
ai15497
VSSA
66/79
Doc ID 15058 Rev 5
STM32F101x4, STM32F101x6
Figure 33. Typical connection diagram using the ADC
Electrical characteristics
STM32F10xxx
V
DD
Sample and hold ADC
V
0.6 V
T
converter
(1)
C
(1)
R
R
AIN
ADC
AINx
12-bit
converter
V
T
V
AIN
0.6 V
C
(1)
ADC
parasitic
I
1 µA
L
ai14139d
1. Refer to Table 42 for the values of RAIN, RADC and CADC
2.
.
C
parasitic represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the
pad capacitance (roughly 7 pF). A high Cparasitic value will downgrade conversion accuracy. To remedy
this, fADC should be reduced.
General PCB design guidelines
Power supply decoupling should be performed as shown in Figure 34. The 10 nF capacitors
should be ceramic (good quality). They should be placed them as close as possible to the
chip.
Figure 34. Power supply and reference decoupling
STM32F10xx4/6
V
DDA
1 µF // 10 nF
V
SSA
ai15498
Doc ID 15058 Rev 5
67/79
Electrical characteristics
STM32F101x4, STM32F101x6
5.3.18
Temperature sensor characteristics
Table 46. TS characteristics
Symbol
Parameter
Min
Typ
Max
Unit
(1)
VSENSE linearity with temperature
Average slope
±1
4.3
±2
4.6
°C
mV/°C
V
T
L
Avg_Slope(1)
4.0
(1)
Voltage at 25°C
1.34
1.43
1.52
V25
(2)
Startup time
4
10
µs
µs
tSTART
ADC sampling time when reading the
temperature
(3)(2)
17.1
TS_temp
1. Guaranteed by characterization, not tested in production.
2. Guaranteed by design, not tested in production.
3. Shortest sampling time can be determined in the application by multiple iterations.
68/79
Doc ID 15058 Rev 5
STM32F101x4, STM32F101x6
Package characteristics
6
Package characteristics
6.1
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
®
ECOPACK is an ST trademark.
Doc ID 15058 Rev 5
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Package characteristics
STM32F101x4, STM32F101x6
Figure 35. VFQFPN48 7 x 7 mm, 0.5 mm pitch, package Figure 36. Recommended footprint
(1)
(1)(2)
outline
(dimensions in mm)
Seating
Plane
C
0.75
5.80
37
48
D
36
1
Pin no. 1 ID
R = 0.20
e
5.60
37
48
0.20
0.30
1
36
5.80
5.60
6.20
6.20
12
25
0.55
13
24
0.50
25
12
7.30
ai15799
24
13
L
b
Bottom View
D2
V0_ME
1. Drawing is not to scale.
2. All leads/pads should also be soldered to the PCB to improve the lead solder joint life.
Table 47. VFQFPN48 7 x 7 mm, 0.5 mm pitch, package mechanical data
millimeters
inches(1)
Symbol
Min
Typ
Max
Min
Typ
Max
A
0.800
0.900
0.020
0.650
0.250
0.230
7.000
4.700
7.000
4.700
0.500
0.400
0.080
1.000
0.050
1.000
0.0315
0.0354
0.0008
0.0256
0.0098
0.0091
0.2756
0.1850
0.2756
0.1850
0.0197
0.0157
0.0031
0.0394
0.0020
0.0394
A1
A2
A3
b
0.180
6.850
2.250
6.850
2.250
0.450
0.300
0.300
7.150
5.250
7.150
5.250
0.550
0.500
0.0071
0.2697
0.0886
0.2697
0.0886
0.0177
0.0118
0.0118
0.2815
0.2067
0.2815
0.2067
0.0217
0.0197
D
D2
E
E2
e
L
ddd
1. Values in inches are converted from mm and rounded to 4 decimal digits.
70/79
Doc ID 15058 Rev 5
STM32F101x4, STM32F101x6
Package characteristics
Figure 37. VFQFPN36 6 x 6 mm, 0.5 mm pitch, package Figure 38. Recommended footprint
(1)
(1)(2)
outline
(dimensions in mm)
Seating plane
C
ddd
C
A2
A
1.00
4.30
27
19
A1
A3
E2
28
18
b
0.50
27
19
4.10
18
28
4.30
4.10
4.80
4.80
e
D2
D
36
10
0.75
9
1
0.30
36
10
6.30
ai14870b
1
9
Pin # 1 ID
R = 0.20
L
E
ZR_ME
1. Drawing is not to scale.
2. All leads/pads should also be soldered to the PCB to improve the lead solder joint life.
Table 48. VFQFPN36 6 x 6 mm, 0.5 mm pitch, package mechanical data
millimeters
inches(1)
Symbol
Min
Typ
Max
Min
Typ
Max
A
0.800
0.900
0.020
0.650
0.250
0.230
6.000
3.700
6.000
3.700
0.500
0.550
0.080
1.000
0.050
1.000
0.0315
0.0354
0.0008
0.0256
0.0098
0.0091
0.2362
0.1457
0.2362
0.1457
0.0197
0.0217
0.0031
0.0394
0.0020
0.0394
A1
A2
A3
b
0.180
5.875
1.750
5.875
1.750
0.450
0.350
0.300
6.125
4.250
6.125
4.250
0.550
0.750
0.0071
0.2313
0.0689
0.2313
0.0689
0.0177
0.0138
0.0118
0.2411
0.1673
0.2411
0.1673
0.0217
0.0295
D
D2
E
E2
e
L
ddd
1. Values in inches are converted from mm and rounded to 4 decimal digits.
Doc ID 15058 Rev 5
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Package characteristics
STM32F101x4, STM32F101x6
Figure 39. LQFP64 – 10 x 10 mm, 64 pin low-profile
Figure 40. Recommended
(1)
(1)(2)
quad flat package outline
footprint
A
A2
48
33
A1
0.3
49
32
0.5
b
12.7
E
E1
10.3
10.3
e
64
17
1.2
1
16
7.8
D1
D
c
L1
12.7
ai14909
L
ai14398b
1. Drawing is not to scale.
2. Dimensions are in millimeters.
Table 49. LQFP64 – 10 x 10 mm, 64-pin low-profile quad flat package mechanical data
millimeters
Typ
inches(1)
Symbol
Min
Max
Min
Typ
Max
A
A1
A2
b
1.60
0.15
1.45
0.27
0.20
0.0630
0.0059
0.0571
0.0106
0.0079
0.05
1.35
0.17
0.09
0.0020
0.0531
0.0067
0.0035
1.40
0.22
0.0551
0.0087
c
D
12.00
10.00
12.00
10.00
0.50
0.4724
0.3937
0.4724
0.3937
0.0197
3.5°
D1
E
E1
e
θ
0°
3.5°
7°
0°
7°
L
0.45
0.60
0.75
0.0177
0.0236
0.0394
0.0295
L1
1.00
Number of pins
N
64
1. Values in inches are converted from mm and rounded to 4 decimal digits.
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Doc ID 15058 Rev 5
STM32F101x4, STM32F101x6
Package characteristics
Figure 41. LQFP48 – 7 x 7mm, 48-pin low-profile quad flat Figure 42. Recommended
(1)
(1)(2)
package outline
footprint
Seating plane
C
A
A2
0.50
A1
c
b
1.20
0.25 mm
ccc
C
Gage plane
0.30
36
25
D
37
24
D1
D3
k
0.20
7.30
A1
L
9.70 5.80
25
36
L1
7.30
24
48
13
12
37
1
1.20
5.80
E3
E1
E
9.70
ai14911b
48
13
Pin 1
identification
1
12
5B_ME
1. Drawing is not to scale.
2. Dimensions are in millimeters.
Table 50. LQFP48 – 7 x 7mm, 48-pin low-profile quad flat package mechanical data
millimeters
inches(1)
Symbol
Min
Typ
Max
Min
Typ
Max
A
A1
A2
b
1.600
0.150
1.450
0.270
0.200
9.200
7.200
0.0630
0.0059
0.0571
0.0106
0.0079
0.3622
0.2835
0.050
1.350
0.170
0.090
8.800
6.800
0.0020
0.0531
0.0067
0.0035
0.3465
0.2677
1.400
0.220
0.0551
0.0087
c
D
9.000
7.000
5.500
9.000
7.000
5.500
0.500
0.600
1.000
3.5°
0.3543
0.2756
0.2165
0.3543
0.2756
0.2165
0.0197
0.0236
0.0394
3.5°
D1
D3
E
8.800
6.800
9.200
7.200
0.3465
0.2677
0.3622
0.2835
E1
E3
e
L
0.450
0°
0.750
7°
0.0177
0°
0.0295
7°
L1
k
ccc
0.080
0.0031
1. Values in inches are converted from mm and rounded to 4 decimal digits.
Doc ID 15058 Rev 5
73/79
Package characteristics
STM32F101x4, STM32F101x6
6.2
Thermal characteristics
The maximum chip junction temperature (T max) must never exceed the values given in
J
Table 8: General operating conditions on page 30.
The maximum chip-junction temperature, T max, in degrees Celsius, may be calculated
J
using the following equation:
T max = T max + (P max x Θ )
J
A
D
JA
Where:
●
●
●
●
T max is the maximum ambient temperature in °C,
A
Θ
is the package junction-to-ambient thermal resistance, in °C/W,
JA
P max is the sum of P
max and P max (P max = P
max + P max),
INT I/O
D
INT
I/O
D
P
max is the product of I and V , expressed in Watts. This is the maximum chip
DD DD
INT
internal power.
P
max represents the maximum power dissipation on output pins where:
I/O
P
max = Σ (V × I ) + Σ((V – V ) × I ),
OL OL DD OH OH
I/O
taking into account the actual V / I and V / I of the I/Os at low and high level in the
OL OL
OH OH
application.
Table 51. Package thermal characteristics
Symbol
Parameter
Value
Unit
Thermal resistance junction-ambient
LQFP 64 - 10 x 10 mm / 0.5 mm pitch
45
Thermal resistance junction-ambient
LQFP 48 - 7 x 7 mm / 0.5 mm pitch
55
16
18
ΘJA
°C/W
Thermal resistance junction-ambient
VFQFPN 48 - 7 x 7 mm / 0.5 mm pitch
Thermal resistance junction-ambient
VFQFPN 36 - 6 x 6 mm / 0.5 mm pitch
6.2.1
Reference document
JESD51-2 Integrated Circuits Thermal Test Method Environment Conditions - Natural
Convection (Still Air). Available from www.jedec.org.
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Doc ID 15058 Rev 5
STM32F101x4, STM32F101x6
Package characteristics
6.2.2
Evaluating the maximum junction temperature for an application
When ordering the microcontroller, the temperature range is specified in the ordering
information scheme shown in Table 52: Ordering information scheme.
Each temperature range suffix corresponds to a specific guaranteed ambient temperature at
maximum dissipation and, to a specific maximum junction temperature. Here, only
temperature range 6 is available (–40 to 85 °C).
The following example shows how to calculate the temperature range needed for a given
application, making it possible to check whether the required temperature range is
compatible with the STM32F101xx junction temperature range.
Example: high-performance application
Assuming the following application conditions:
Maximum ambient temperature T
= 82 °C (measured according to JESD51-2),
Amax
I
= 50 mA, V = 3.5 V, maximum 20 I/Os used at the same time in output at low
DDmax
DD
level with I = 8 mA, V = 0.4 V and maximum 8 I/Os used at the same time in output
OL
OL
mode at low level with I = 20 mA, V = 1.3 V
OL
OL
P
P
= 50 mA × 3.5 V= 175 mW
INTmax
= 20 × 8 mA × 0.4 V + 8 × 20 mA × 1.3 V = 272 mW
IOmax
This gives: P
= 175 mW and P
= 272 mW
IOmax
INTmax
P
= 175 + 272 = 447 mW
Dmax
Thus: P
= 447 mW
Dmax
Using the values obtained in Table 51 T
is calculated as follows:
Jmax
–
T
For LQFP64, 45 °C/W
= 82 °C + (45 °C/W × 447 mW) = 82 °C + 20.1 °C = 102.1 °C
Jmax
This is within the junction temperature range of the STM32F101xx (–40 < T < 105 °C).
J
Figure 43. LQFP64 P max vs. T
D
A
700
600
500
400
300
200
100
0
Suffix 6
65
75
85
95
105
115
TA (°C)
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Ordering information scheme
STM32F101x4, STM32F101x6
7
Ordering information scheme
Table 52. Ordering information scheme
Example:
STM32 F 101 C
4
T
6
A
xxx
Device family
STM32 = ARM-based 32-bit microcontroller
Product type
F = general-purpose
Device subfamily
101 = access line
Pin count
T = 36 pins
C = 48 pins
R = 64 pins
Flash memory size
4 = 16 Kbytes of Flash memory
6 = 32 Kbytes of Flash memory
Package
T = LQFP
U = VFQFPN
Temperature range
6 = Industrial temperature range, –40 to 85 °C.
Internal code
“A” or blank(1)
Options
xxx = programmed parts
TR = tape and real
1. For STM32F101x6 devices with a blank internal code, please refer to the STM32F103x6/8/B datasheet
available from the ST website: www.st.com.
For a list of available options (speed, package, etc.) or for further information on any aspect
of this device, please contact your nearest ST sales office.
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STM32F101x4, STM32F101x6
Revision history
8
Revision history
Table 53. Document revision history
Date
Revision
Changes
23-Sep-2008
1
Initial release.
I/O information clarified on page 1. Figure 7: Memory map modified.
In Table 4: Low-density STM32F101xx pin definitions: PB4, PB13, PB14,
PB15, PB3/TRACESWO moved from Default column to Remap column.
VREF- is not available in the offered packages: Figure 1: STM32F101xx
Low-density access line block diagram, Figure 10: Power supply scheme
and Figure 34: Power supply and reference decoupling updated,
Figure 30: Power supply and reference decoupling (VREF+ not connected
to VDDA) removed.
07-Apr-2009
2
Note modified in Table 12: Maximum current consumption in Run mode,
code with data processing running from Flash and Table 14: Maximum
current consumption in Sleep mode, code running from Flash or RAM.
Figure 15, Figure 16 and Figure 17 show typical curves.
ACCHSI max values modified in Table 23: HSI oscillator characteristics.
Small text changes.
Note 5 updated and Note 4 added in Table 4: Low-density
STM32F101xx pin definitions.
VRERINT and TCoeff added to Table 11: Embedded internal reference
voltage. Typical IDD_VBATvalue added in Table 15: Typical and maximum
current consumptions in Stop and Standby modes. Figure 14: Typical
current consumption on VBAT with RTC on versus temperature at
different VBAT values added.
fHSE_ext min modified in Table 19: High-speed external user clock
characteristics.
CL1 and CL2 replaced by C in Table 21: HSE 4-16 MHz oscillator
characteristics and Table 22: LSE oscillator characteristics (fLSE =
32.768 kHz), notes modified and moved below the tables.
24-Sep-2009
3
Note 1 modified below Figure 20: Typical application with an 8 MHz
crystal.
Table 23: HSI oscillator characteristics modified. Conditions removed
from Table 25: Low-power mode wakeup timings.
Figure 27: Recommended NRST pin protection modified.
IEC 1000 standard updated to IEC 61000 and SAE J1752/3 updated to
IEC 61967-2 in Section 5.3.10: EMC characteristics on page 48.
Jitter added to Table 26: PLL characteristics.
CADC and RAIN parameters modified in Table 42: ADC characteristics.
RAIN max values modified in Table 43: RAIN max for fADC = 14 MHz.
Small text changes.
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Revision history
Table 53. Document revision history (continued)
STM32F101x4, STM32F101x6
Date
Revision
Changes
Added VFQFPN48 package.
Updated note 2 below Table 39: I2C characteristics
20-May-2010
19-Apr-2011
4
Updated Figure 28: I2C bus AC waveforms and measurement circuit(1)
Updated Figure 27: Recommended NRST pin protection
Updated Section 5.3.12: I/O current injection characteristics
Updated footnotes below Table 5: Voltage characteristics on page 29
and Table 6: Current characteristics on page 30
Updated tw min in Table 19: High-speed external user clock
characteristics on page 42
5
Updated startup time in Table 22: LSE oscillator characteristics (fLSE =
32.768 kHz) on page 45
Added Section 5.3.12: I/O current injection characteristics
Updated Section 5.3.13: I/O port characteristics
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