STM8T143AUMEI2TR_技术文档

STM8T143

Single-channel capacitive sensor for touch and proximity detection

Datasheet - production data

Applications

• Ear-face proximity detection for smart phone

devices

• Companion device for navigation

joystick/optical track pad

SO8

(narrow)

UFDFPN8

(2 x 3 mm)

• User hand detection for Nomad equipment

(tablet PC)

• Ear-head detection for MP3/walkman ear buds

and Bluetooth headsets

Features

• On/off touch sensing button such as GPS

system home button

• Touch and short range proximity detection

• Internal sampling capacitor

• User hands detection for mouse/keyboards

• Wall switch backlight activation on user

• On-chip integrated voltage regulator

• Automatic electrode tuning (AET)

approach and light controls on user touch

• Electrode parasitic capacitance compensation

(EPCC)

• Dynamic calibration (DYCAL™)

• Environment control system (ECS)

• User programmable options include:

• Configurable output modes

• Configurable sensitivity levels

• Data streaming mode

• Low power management

• Operating supply voltage: 3 V to 5.5 V

• Supported interface:

– Individual key state output

– Single wire data interface

• Operating temperature: -40 to +85 °C

• ECOPACK® 8-pin SO and 8-pin UFDFPN

packages

October 2013

DocID18315 Rev 6

1/65

This is information on a product in full production.

www.st.com

Contents

STM8T143

Contents

1

2

3

4

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Pin descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

STM8T ProxSense technology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

4.1

4.2

4.3

4.4

Capacitive sensing overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

Charge-transfer acquisition principle . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

Internal sampling capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Electrode parasitic capacitance compensation (EPCC) . . . . . . . . . . . . . . 13

5

STM8T143 processing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

5.1

5.2

5.3

5.4

5.5

Automatic electrode tuning (AET) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Signal calculation and reference calibration . . . . . . . . . . . . . . . . . . . . . . . 15

Detection and release thresholds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Dynamic calibration (DYCAL) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Environment control system (ECS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

5.5.1

5.5.2

5.5.3

5.5.4

ECS principle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

ECS halt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

Reference freeze and reference freeze timeout . . . . . . . . . . . . . . . . . . 23

ECS filter constant adjustment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

5.6

Debounce filter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

6

Device operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

6.1

6.2

Option byte description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

Device operating modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29

6.2.1

6.2.2

6.2.3

Dual output mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29

Control mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30

Data streaming mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31

6.3

6.4

Output polarity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32

Power modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33

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Contents

Typical application diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34

Design guidelines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36

7

8

8.1

Sensitivity adjustment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36

8.1.1

PCB layout and construction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36

9

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37

9.1

Parameter conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37

9.1.1

9.1.2

9.1.3

9.1.4

Minimum and maximum values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37

Typical values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37

Typical curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37

Loading capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37

9.2

9.3

Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38

Operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38

9.3.1

9.3.2

9.3.3

General operating conditions and supply characteristics . . . . . . . . . . . 38

Average current consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39

I/O pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39

9.4

9.5

9.6

9.7

Regulator and reference voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41

Capacitive sensing characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42

Streaming mode characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44

EMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45

9.7.1

9.7.2

9.7.3

9.7.4

9.7.5

9.7.6

Functional EMS (electromagnetic susceptibility) . . . . . . . . . . . . . . . . . . 45

Prequalification trials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45

Electromagnetic interference (EMI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45

Absolute maximum ratings (electrical sensitivity) . . . . . . . . . . . . . . . . . 46

Electrostatic discharge (ESD) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46

Static latchup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46

10

Package characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47

10.1 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48

10.1.1 SO8 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48

10.1.2 UFDFPN8 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . 50

10.2 Package thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52

10.2.1 Reference document . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52

11

Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53

DocID18315 Rev 6

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4

Contents

STM8T143

11.1 STM8T143 ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . 53

11.2 Orderable favorite device lists . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54

11.2.1

Part number option bytes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54

11.3 In-factory option byte programming service . . . . . . . . . . . . . . . . . . . . . . . 54

11.4 Revision code on device markings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55

12

13

STM8T143 programming tool . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60

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DocID18315 Rev 6

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List of tables

Table 1.

Table 2.

Table 3.

Table 4.

Table 5.

Table 6.

Table 7.

Table 8.

STM8T143 pin descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Option bytes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

Option byte description. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

Pin 1 configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29

Pin 8 configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29

Data streaming frame . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32

Voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38

Current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38

Thermal characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38

Operating characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38

Average current consumption. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39

OUT/TOUT/DATA streaming pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39

POUT/TOUT pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40

CTRL pin characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40

Regulator and reference voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41

General capacitive sensing characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42

Table 9.

Table 10.

Table 11.

Table 12.

Table 13.

Table 14.

Table 15.

Table 16.

Table 17.

Table 18.

Table 19.

Table 20.

Table 21.

Table 22.

Table 23.

Table 24.

Table 25.

Table 26.

Table 27.

Table 28.

Table 29.

Table 30.

Table 31.

Internal C value. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43

S

Implemented EPCC values (pF) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44

External sensing component characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44

Data streaming timing characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44

EMS data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45

EMI data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45

ESD absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46

Electrical sensitivities . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46

SO8-lead plastic small outline - package mechanical data. . . . . . . . . . . . . . . . . . . . . . . . . 48

UFDFPN8-lead ultra thin fine pitch dual flat - package mechanical data . . . . . . . . . . . . . . 50

Thermal characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52

Option byte values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54

Device identification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55

Ordering information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59

Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60

DocID18315 Rev 6

5/65

5

List of figures

STM8T143

List of figures

Figure 1.

Figure 2.

Figure 3.

Figure 4.

Figure 5.

Figure 6.

Figure 7.

Figure 8.

Figure 9.

STM8T143 block diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

SO8 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

UFDFPN8 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Coupling with hand increases the capacitance of the sensing electrode . . . . . . . . . . . . . . 11

STM8T143 measuring circuitry. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Signal monitored on C pin. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

X

Automatic electrode tuning (AET). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Signal reference and detection threshold (not detailed) . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

DYCAL general operation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Figure 10. DYCAL operation with water residue . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Figure 11. No DYCAL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Figure 12. IIR filter formula . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

Figure 13. ECS halt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

Figure 14. Unwanted detection managed by the reference freeze timeout . . . . . . . . . . . . . . . . . . . . . 23

Figure 15. ECS filter K constant management. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

Figure 16. Data streaming frame . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31

Figure 17. Typical application schematic for Control mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34

Figure 18. Typical application schematic for Dual output mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34

Figure 19. Typical application schematic for Data streaming mode. . . . . . . . . . . . . . . . . . . . . . . . . . . 35

Figure 20. Pin loading conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37

Figure 21. Data streaming timing diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44

Figure 22. SO8-lead plastic small outline - package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48

Figure 23. SO8 narrow recommended footprint (dimensions in mm) . . . . . . . . . . . . . . . . . . . . . . . . . 49

Figure 24. UFDFPN8-lead ultra thin fine pitch dual flat package (MLP) package outline . . . . . . . . . . 50

Figure 25. UFDFPN 2 x 3 mm recommended footprint (dimensions in mm) . . . . . . . . . . . . . . . . . . . . 51

Figure 26. STM8T143 ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53

Figure 27. SO8 package marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55

Figure 28. UFDFPN8 package marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56

Figure 29. STM8T143 programming tool . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59

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STM8T143

Description

1

Description

The STM8T143 is a single channel, fully integrated, touch sensing capacitive sensor. It uses

a ProxSense™ charge transfer capacitive acquisition method that is capable of near range

proximity detection. The STM8T143 offers a state of the art capacitive sensing engine with

an embedded sampling capacitor and voltage regulator allowing the overall solution cost to

be reduced and improving system immunity in noisy environments. It can target a detection

range up to 20 cm thanks to the electrode parasitic capacitance compensation (EPCC)

feature. The EPCC automatically compensates ground parasitic capacitance sources (such

as ground planes, printed circuit board tacks, and large metal objects) which significantly

reduce the proximity detection range.

The application fields or typical functions with proximity features are various and include:

on/off switches, replacement/enhancement, home buttons, backlighting feature on proximity

for user interfaces, wakeup or control function on proximity, find-in-the-dark for lighting

equipment, and companion device for battery saving in portable equipment.

The device has been designed to be used in applications where proximity is required and

touch conditions can prevail for an extended period of time which may result in

uncompensated drift in conventional capacitive sensors. Therefore, a process called

DYCAL is implemented.

The STM8T143 is an ideal alternative, cost-effective, and extremely low power solution to

replace conventional infrared optical proximity sensors. Capacitive sensing technology is

not sensitive to sunlight or artificial light effects. The STM8T143 offers a much lower

consumption (12 µA range versus 100 µA range) and a small form factor (DFN8 2*3*0.65

mm). Lastly, there is no need for a clear opening on the bezel to let light pass through.

The STM8T143 is offered in 8-pin packages and features both touch and proximity sensing

outputs.

The STM8T143 touch pad can sense through almost any dielectric and thereby allows the

electronics to be contained in a sealed enclosure.

Note:

ProxSense™ is a trademark of Azoteq (Pty) Ltd.

DocID18315 Rev 6

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64

Block diagram

STM8T143

2

Block diagram

Figure 1. STM8T143 block diagram

9ROWDJH

9''

95(*

UHJXODWRU

$QDORJ

VZLWFK

&RPSDUDWRU

&XUUHQW

PLUURU

287ꢅ7287ꢅ'$7$

&75/ꢅ3287

0&8ꢆV\VWHP

HQJLQH

9

75,3

&

6

2SWLRQ

E\WH

5&

RVF

&;

9DULDEOH

QHJDWLYH

FDSDFLWDQFH

&

(3&&

$GYDQFHGꢆ3UR[6HQVHꢆHQJLQHꢆꢆꢆꢆ

DLꢀꢁꢂꢃꢄF

RC oscillator

The 1-MHz RC oscillator is an internal fixed frequency oscillator used to supply the clock to

the MCU system engine.

Voltage regulator

The voltage regulator has an internal comparison and feedback circuit that ensures the

V

voltage is kept stable and constant. The regulator requires an external smoothing

REG

capacitor.

MCU system engine

The MCU system engine controls the capacitive sensing engine and processes touch and

proximity detection signals.

Advanced ProxSense engine

The advanced ProxSense engine circuitry uses a charge-transfer method to detect

capacitance changes. It features:

•

An analog voltage comparator

A programmable internal sampling capacitor

A system that allows the ground parasitic capacitance to be compensated to improve

the system sensitivity. This system is called electrode parasitic capacitance

compensation (EPCC).

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Pin descriptions

3

Pin descriptions

Figure 2. SO8 pinout

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1. Control mode

2. Dual output mode

3. Data streaming mode

DocID18315 Rev 6

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64

Pin descriptions

STM8T143

Table 1. STM8T143 pin descriptions

no.

Mode

Pin type⁽¹⁾

Pin name

Pin function⁽²⁾

Control mode

OD/PP

OUT

TOUT

DATA

V_SS

Touch or proximity output

Touch output

1

Dual output mode

OD/PP

Data streaming mode

OD

Data streaming output

Ground

2

3

4

5

6

7

-

S

-

SNS

S

NC

Not connected

-

C_X

Capacitive sensing channel pin to R_X

Supply voltage

-

V_DD

-

NC

Not connected

-

S

V_REG

CTRL

POUT

Internal voltage regulator output⁽³⁾

Control input

Control mode

Dual output mode

I

8

PP

Proximity output

1. S: power supply, SNS: capacitive sensing, OD: output open drain, PP: output push-pull, and I: input

2. Pin function depends on option byte configuration (please refer to Section 6: Device operation)

3. Requires a low equivalent series resistance (ESR), 1µF capacitor to ground. This output must not be used

to power other devices.

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DocID18315 Rev 6

STM8T143

STM8T ProxSense technology

4

STM8T ProxSense technology

4.1

Capacitive sensing overview

A capacitance exists between any reference point and ground as long as they are

electrically isolated. If this reference point is a sensing electrode, it can help to think of it as

a capacitor. The positive electrode of the capacitor is the sensing electrode, and the

negative electrode is formed by the surrounding area (virtual ground reference in Figure 4).

Figure 4. Coupling with hand increases the capacitance of the sensing electrode

Sensing electrode

C_T

C_X

Lower capacitance

Higher capacitance

When a conductive object is brought into proximity of the sensing electrode, coupling

appears between them, and the capacitance of the sensing electrode relative to ground

increases. For example, a human hand raises the capacitance of the sensing electrode as it

approaches it. Touching the dielectric panel that protects the electrode increases its

capacitance significantly.

4.2

Charge-transfer acquisition principle

To measure changes in the electrode capacitance, STM8T devices employ bursts of

charge-transfer cycles.

The measuring circuitry is connected to the C pin. It is composed of a serial resistor R

X

plus the sensing electrode itself of equivalent capacitance C (see Figure 5). The sensing

X

electrode can be made of any electrically conductive material, such as copper on PCBs, or

transparent conductive material like Indium Tin Oxide (ITO) deposited on glass or Plexiglas.

The dielectric panel usually provides a high degree of isolation to prevent electrostatic

discharge (ESD) from reaching the STM8T touch sensing controller. Connecting the serial

resistor (R ) to the C pin improves ESD immunity even more.

X

DocID18315 Rev 6

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STM8T ProxSense technology

STM8T143

Figure 5. STM8T143 measuring circuitry

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1. R_Xmust be placed as close as possible to the device.

The principle of charge transfer is to charge the electrode capacitance (C ) using a stable

X

power supply. When C is fully charged, part of the accumulated charge is transferred from

X

C to an internal sampling capacitance, referred to as C . The transfer cycle is repeated

X

S

until the voltage across the sampling capacitor C reaches the end of acquisition reference

S

voltage (V

). The change in the electrode capacitance, caused by the presence or

TRIP

absence of the human body, is detected by measuring the number of transfer cycles

composing a burst (see Figure 6).

Throughout this document the following naming conventions apply:

•

The charge transfer period (t_TRANSFER) refers to the charging of C and the

X

subsequent transfer of the charge to C .

S

The burst cycle duration (t

) is the time required to charge C to V

. The burst

TRIP

BURST

S

count is the number of charge transfer periods (t

) during one t

cycle.

TRANSFER

BURST

The sampling period (t

) is the acquisition rate.

SAMPLING

Figure 6. Signal monitored on C pin

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DocID18315 Rev 6

STM8T143

STM8T ProxSense technology

4.3

Internal sampling capacitor

To reduce the application cost and increase the device flexibility, the STM8T143 features

several internal sampling capacitors to fit a wide range of applications.

4.4

Electrode parasitic capacitance compensation (EPCC)

The implementation of an electrode pad in a system always induces parasitic capacitances

through tracks and surrounding components.The electrode parasitic capacitance is the

residual capacitance between electrode and ground when no finger is present.

The EPCC is an internal hardware circuitry that compensates part of the electrode parasitic

capacitance to improve the capacitive sensing channel sensitivity.

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STM8T143 processing

STM8T143

5

STM8T143 processing

The STM8T143 device is designed to ensure reliable operation whatever the environment

and operating conditions. To achieve this high level of robustness, dedicated processing

have been implemented:

•

Automatic electrode tuning (AET)

Signal and reference calibration

Detection and release thresholds

Dynamic calibration (DYCAL)

Environment control system (ECS)

Debounce filter

Host control input

5.1

Automatic electrode tuning (AET)

AET is a sophisticated technology implemented in the STM8T143 device. It optimizes the

performance of the device in a wide range of applications and environmental conditions.

AET algorithm automatically adjusts the internal C capacitor and EPCC parameters to

S

optimize system performance. Please refer to:

•

Table 17: Internal CS value for possible resulting values of this internal sampling

capacitance

•

Table 18: Implemented EPCC values (pF) for possible values of the EPCC

capacitance.

The principle is to select an internal C capacitor and EPCC to obtain a burst count in a

S

predefined range of AET target value ± 256 burst counts.

At device startup, C is selected to reach the nearest signal burst count value to a “gain

S

target value”. Then, the EPCC hardware subtracts an increasing capacitance value until a

“AET target value” is reached. During normal device operation, the EPCC hardware

subtracts from the electrode capacitance (C ), the compensation capacitance value

X

determined during the calibration phase.

This automatic system adaptation allows the same burst count number to be reached

regardless of the application electrode and surrounding.

The AET gain can be adjusted by selecting the gain target value through the “Gain target”

option bits.

The AET algorithm is executed whenever the device starts-up and during device operation

when the reference exits burst count range.

During the AET processing (t

), proximity and touch events cannot be detected (please

AET

refer to Table 6: Data streaming frame). In Data streaming mode, the AET activity is

reported and the internal C and EPCC values can be monitored (see Section 6.2.3: Data

S

streaming mode).

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STM8T143 processing

Figure 7. Automatic electrode tuning (AET)

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1. For the AET and gain target values, please refer to Table 16: General capacitive sensing characteristics.

5.2

Signal calculation and reference calibration

The capacitance change, induced by the presence of a finger or a hand in the device

detection area, is sensed by the variation in the number of charge transfer pulses

composing the burst. The number of charge transfer pulses is called “burst count”. The burst

count is filtered against the noise and compared to a “reference” to determine if there is a

touch/proximity detection. Please refer to Section 5.5: Environment control system (ECS)

for more details about the filtering process.

The reference is calculated at device startup during the calibration phase by averaging the

first 44 measurements before normal device operation.

Then, the environment control system takes care of the reference slow evolution over time.

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STM8T143 processing

STM8T143

5.3

Detection and release thresholds

During the detection operation, after calibration is over, the STM8T143 switches between

three operating states: no detection, proximity detection, and touch detection. The switch

between these states is driven by the difference between the signal and the reference.

The system goes from no detection to proximity detection state when the (reference - signal)

is higher than the proximity threshold (PTh). In this state, the ECS is halted and the

reference is frozen.

The system goes from no detection or proximity detection state to touch detection state

when the (reference - signal) is higher than the touch threshold (TTh). When this happens,

the reference value is changed to reflect the touch state after the delay t

is called dynamic calibration (DYCAL).

. This process

DYCAL

The system goes from the touch detection to no detection state when the (signal -

reference) goes above the release threshold (RTh). At this point, another DYCAL occurs for

the reference to represent the untouched state again.

For higher flexibility, several proximity and touch detection thresholds are available and

independently selectable through option byte: one PTh and one TTh.

•

The touch thresholds allow the touch sensitivity to be adapted to the panel thickness

and the electrode sensitivity.

•

The proximity thresholds allow the STM8T143 device to adapt to various surroundings

and to tune the detection distance.

The release threshold is a ratio of the touch threshold noted (TTh). TTh is selected by the

“touch detection threshold” option bits. The ratio is selected by the “release threshold ratio”

option bits.

A time filtering, similar to the debouncing of the mechanical switches, is applied to avoid

noise induced detections.

Please refer to Section 5.6: Debounce filter for operation details.

Figure 8 simplifies the proximity and touch detection event according to the signal variation

“Δ (signal)”. The Δ (signal) is the absolute value of the reference minus the signal.

16/65

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Figure 8. Signal reference and detection threshold (not detailed)

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1. t_{AET_HALT}= AET halt period after end of detection.

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STM8T143 processing

STM8T143

5.4

Dynamic calibration (DYCAL)

The STM8T143 DYCAL process is based on a dynamic threshold and reference

management which allows tracking of slow environmental changes even when the sensor is

in touch state. A low threshold is used to detect the proximity of an object, with a higher

threshold for touch detection. DYCAL is performed when a touch condition is detected for

longer than a certain period (t

). When a release condition occurs, the DYCAL

DYCAL

operation is performed instantaneously. Figure 9 represents the DYCAL operation for the

touch event (DYCAL_T) and for the release event (DYCAL_R).

After the DYCAL_R event, the AET process is frozen for a t

delay.

AET_HALT

Figure 9. DYCAL general operation

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1. t_{AET_HALT}= AET halt period after end of detection.

2. The release threshold (RTh) is a ratio of the touch threshold (TTh). TTh is selected by the “touch detection

threshold” option bits (TTh). The ratio is selected by the “release threshold ratio” option bits.

3. T_FTh = Touch freeze threshold. Please refer to Table 16: General capacitive sensing characteristics and

Figure 12: IIR filter formula for the T_FTh description.

4. In touch condition, the ECS allows the reference to adapt a slow signal variation change.

18/65

DocID18315 Rev 6

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STM8T143 processing

Figure 10 is an example of how the system behaves with a water residue when it is

managed by DYCAL.

Figure 10. DYCAL operation with water residue

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1. t_{AET_HALT}= AET halt period after end of detection.

2. T_FTh = Touch freeze threshold. Please refer to Table 16: General capacitive sensing characteristics and

Figure 12: IIR filter formula for the T_FTh description.

DocID18315 Rev 6

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64

STM8T143 processing

STM8T143

Figure 11 is an example of how the system behaves with a water residue if the system is not

managed by DYCAL.

Figure 11. No DYCAL

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DocID18315 Rev 6

STM8T143

STM8T143 processing

5.5

Environment control system (ECS)

5.5.1

ECS principle

The acquired signal value of the capacitive sensing channel increases or decreases

according to environmental conditions such as temperature, power supply, moisture, and

surrounding conductive objects. The STM8T143 includes a built-in digital infinite impulse

response (IIR) filter capable of tracking slow changes in the environment. It is called the

environment control system (ECS). This is a low pass filter with a gain of one. The filter

makes the reference follow slow changes of the signal while fast changes are recognized as

a touch or proximity.

Figure 12. IIR filter formula

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If a touch or proximity is detected, the ECS is disabled for the duration of the reference

freeze timeout. In this case, Y = Y . As soon as the reference freeze times out or the

n

n_1

detection ends, the filter is set as active again.

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STM8T143 processing

STM8T143

5.5.2

ECS halt

As soon as a proximity detection is triggered, the ECS should be halted otherwise the ECS

considers the signal variation due to the user action as an environment change. In such a

case, the ECS adapts to the new conditions until the reference reaches the current signal

level generated by the user. This leads to a detection loss as described in Figure 13.

Figure 13. ECS halt

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The dashed lines in Figure 13 represent the reference and thresholds if ECS is not halted.

In this case, detection is lost before the user exits the electrode detection area. The plain

lines represent normal device processing with the ECS stop.

22/65

DocID18315 Rev 6

STM8T143

STM8T143 processing

5.5.3

Reference freeze and reference freeze timeout

To prevent an object under detection from influencing the reference value, the ECS is halted

as soon as a proximity detection happens: PTh < Δ(signal) < TTh. Consequently, the

reference is frozen.

In order to recover from a sudden environment change, the reference freeze ends after a

maximum programmable delay called the “reference freeze timeout” (t_RFT).

When a detection lasts longer than the t_RFT, a recalibration process occurs. The recalibration

consists of setting the reference to the current burst count value minus 8. Then, ECS is re-

enabled and the reference moves along the signal. After a period of time that depends on

the signal variation speed, the difference between the signal and the reference becomes

smaller than the detection threshold and the device reports no detection. The process delay

after the timeout, to get the reference aligned with the current signal, is called the

recalibration time (t_RECAL).

Figure 14 describes the situation where an unwanted detection is solved by the reference

freeze timeout. The left-hand side of the image (Reference freeze timeout enabled) shows

the reference freeze timeout configured to launch a calibration if water droplets are poured

onto the electrode. The droplet capacitance is not sufficient to make the device enter into

touch detection but it is enough to trigger a proximity detection. If the proximity detection

caused by the droplets lasts longer than the reference freeze timeout delay, the device

recalibrates to the new “wet” environment. Consequently, the detection output is cleared.

The right-hand side of the image (Infinite reference freeze timeout) shows the device

behavior when the reference freeze timeout is disabled. The device leaves proximity

detection only after the droplets are removed.

Figure 14. Unwanted detection managed by the reference freeze timeout

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STM8T143 processing

STM8T143

5.5.4

ECS filter constant adjustment

To track the environmental changes more accurately and to manage the detection

occurrence more efficiently, different ECS filter K co-efficient values are set according to the

signal range and detection state. Figure 15: ECS filter K constant management provides the

filter K co-efficient value in different situations.

Figure 15. ECS filter K constant management

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DocID18315 Rev 6

STM8T143

STM8T143 processing

5.6

Debounce filter

The purpose of the debounce filter mechanism is to reduce the effects of noise on the touch

and proximity detection. Debouncing is applied to acquisition samples to filter undesired

abrupt changes. The principle is to wait for several consecutive acquisitions with the signal

on the same side of a threshold before reporting the change in detection state induced by

this threshold crossing.

The number of consecutive detection debounce counts (DDC) and end of detection

debounce counts (EDDC) needed to identify a proximity/touch detection are defined in

Section 9.5: Capacitive sensing characteristics on page 42.

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Device operation

STM8T143

6

Device operation

The STM8T143 can be configured through a set of user-selectable one-time programmable

(OTP) option bytes. These options can be used in their default (unconfigured) state or set

for specific applications. For large orders, preconfigured devices are available (please refer

to Section 11: Ordering information).

The available options include:

•

Dual output, Control, or Data streaming mode

Output polarity

Touch and proximity detection thresholds

–

Eight selectable detection thresholds for touch detection

Four selectable detection thresholds for proximity detection

•

Control type

–

Halt conversion control

Reference freeze control

Reference freeze timeout

6.1

Option byte description

A set of tools is supplied by STMicroelectronics to program the user OTP options for

prototyping purposes. Please refer to Section 12: STM8T143 programming tool for more

details.

Note:

Devices which are not yet programmed (also called blank devices) are delivered with all bits

set to ‘0’.

Table 2. Option bytes

Option

byte

no.

Option bits

Bit 3

Factory

default

setting

Bit 7

Bit 6

Bit 5

Bit 4

Bit 2

Bit 1

Bit 0

Release

threshold

ratio

Output

type⁽¹⁾

OPT2

Reserved

Data

Gain target

Dynamic

calibration Reserved

delay

Reserved

0x00

Low power

mode

Reference freeze

timeout

Dual output/

Control mode

OPT1 streaming

mode

0x00

Proximity detection

threshold

Output

Reserved

OPT0

Touch detection threshold

Control type

polarity

1. Used only in Control mode.

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Device operation

Table 3. Option byte description

Description

Option

byte no.

Bits [7:6]: Reserved, must be cleared

Bit 5: Output type in Control mode (see Section 6.2.2: Control mode)

0: Proximity output

1: Touch output

Bit 4: Release threshold ratio

0: 75 %

1: 87.5 %

Bits [3:1]: Gain target

000: 200

OPT2

001: 250

010: 300

011: 350

100: 400

101: 550

110: 700

111: 850

Bit 0: Reserved, must be cleared

Bit 7: Data streaming mode (see Section 6.2.3: Data streaming mode)

0: Disabled

1: Enabled

Bits [6:5]: Low power mode (see Section 6.4: Power modes)

00: Normal power mode

01: Low power mode 1

10: Low power mode 2

11: Low power mode 3

Bits [4:3]: Reference freeze timeout t_RFT(see Section 5.6: Debounce filter)

00: Infinite

01: 18 s

10: 60 s

11: 3 s

OPT1

Bit 2: Dynamic calibration delay (t_DYCAL)

0: 250 ms

1: 1 s

Bit 1: Reserved, must be cleared

Bit 0: Dual output/Control mode (see Section 6.2.1: Dual output mode)

0: Pin 8 in Control input mode

1: Pin 8 in Proximity output mode

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Device operation

STM8T143

Table 3. Option byte description (continued)

Description

Option

byte no.

Bits [7:5]: Touch detection threshold (TTh)

000: 40

001: 60

010: 100

011: 200

100: 360

101: 500

110: 700

111: 900

Bit [4:3]: Proximity detection threshold (PTh)

00: 4

01: 8

OPT0

10: 16

11: 32

Bit 2: Reserved, must be cleared

Bit 1: Output polarity (see Section 6.3: Output polarity)⁽¹⁾

0: Active low

1: Active high

Bit 0: Control type (see Section 6.2.2: Control mode)

0: Halt conversion control

1: Reference freeze control

1. Effective only when Data streaming mode is disabled

28/65

DocID18315 Rev 6

STM8T143

Device operation

6.2

Device operating modes

The STM8T143 device provides three operating modes:

•

Dual output mode

Control mode

Data streaming mode

These modes are selected through the option bytes.

6.2.1

Dual output mode

The device is configured by default in Control mode. The Dual output/Control mode bit

allows the user to configure pin 8 of the device in Control input or Proximity output.

When Dual output mode is selected, pin 8 becomes the proximity output while pin1 is the

touch output.

Table 4. Pin 1 configuration

Data streaming

mode

Dual output/Control

mode

Output

type

Output

polarity

Pin 1 configuration

OPT1 bit 7

OPT1 bit 0

OPT2 bit 5

OPT0 bit 1

DATA pin

Open drain output

1

x

Proximity output

Open drain output, active low

0

1

0

1

x

0

1

0

1

0

1

Proximity output

Push-pull output, active high

Touch output

Open drain output, active low

Touch output

Push-pull output, active high

Proximity output

Open drain output, active low

Proximity output

Push-pull output, active high

Table 5. Pin 8 configuration

Dual output/Control mode Control type

Output polarity

OPT0 bit 1

Pin 8 configuration

OPT1 bit 0

OPT0 bit 0

Halt control input

ECS control input

0

1

x

Proximity output

Push-pull output, active low

1

x

0

1

Touch output

Push-pull output, active high

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64

Device operation

STM8T143

6.2.2

Control mode

In Control mode, pin 8 can be used to halt the conversion or to freeze the reference (refer to

Section 5.4: Dynamic calibration (DYCAL)).

Halt conversion control mode

When the conversion is halted, the device is in low power consumption state (see device

electrical characteristics). In this state, the CTRL pin can be used to manage the power

consumption and/or control the acquisition to synchronize the sampling burst with external

events. This can be useful, for example, to halt acquisitions during noisy operations or to

synchronize an acquisition with the noise period.

When the CTRL pin is tied high for longer than t

, the charge conversion cycle is halted,

CTRL

once the current conversion has been completed. The device remains in this halt mode until

the CTRL line is tied low again. An automatic recalibration is performed directly after the

CTRL pin is released to compensate for any environmental changes which might have

occurred during the halt duration.

Reference freeze control mode

In this mode, the device reference evolution can be frozen according to the CTRL pin state.

The CTRL pin has precedence over the configuration bits selected for the reference freeze

timeout.

This function can be used to implement user-dedicated ECS management.

When the CTRL pin is tied high for longer than t

low.

, the filter is halted until this pin is tied

CTRL

If the host freezes the reference at device startup, the calibration starts after the reference

freeze is released.

Forced recalibration

Generating a pulse of t

duration on the CTRL pin recalibrates the reference. The

recal_control

ECS is reset, clearing the output state. Please refer to Table 16: General capacitive sensing

characteristics for t constraints.

recal_control

If the signal value is outside its allowable range, the device forces an AET process event.

(refer to Section 5.1: Automatic electrode tuning (AET))

30/65

DocID18315 Rev 6

STM8T143

Device operation

6.2.3

Data streaming mode

The STM8T143 can stream data to allow designers fine tune the application and device

settings. Data streaming may also be used by an MCU to control events or to further

process the results obtained from STM8T143 devices. Data streaming is performed using a

1-wire communication data protocol on the data streaming output pin. When Data streaming

mode is enabled, the OUT function is no longer accessible.

Data streaming protocol

The data streaming output is open drain. Figure 16 illustrates the communication protocol

for initializing and sending data using a 1-wire communication protocol.

1. Communications is initiated by a START bit.

2. Following the START bit, a synchronization byte (0xAA) is sent. This byte can be used

by the MCU for clock synchronization.

3. Following the synchronization byte, the data bytes are sent with the MSB first.

4. Each byte sent is preceded by a START bit; a STOP bit follows every byte.

5. The STOP bit does not have a defined period.

Figure 16. Data streaming frame

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Data streaming is initiated by the STM8T143. When data streaming is enabled, a frame is

sent after each charge cycle. Therefore, the acquisition is not disturbed by the

communication itself.

DocID18315 Rev 6

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64

Device operation

STM8T143

Frame format

The content of the data frame is described in Table 6.

Table 6. Data streaming frame

Description

Byte #

Bit

0

1

2

3

[7:0]

Signal burst count (MSB)

Signal burst count (LSB)

[15:8]

[23:16]

[31:24]

Reference burst count (MSB)

Reference burst count (LSB)

39

38

37

36

35

34

33

32

AET processing

Proximity event detected

Touch event detected

OUT state indication

Reserved

4

Reserved

47

46

45

44

43

42

41

40

ICS bit 2

ICS bit 1

ICS bit 0

EPCC bit 4

EPCC bit 3

EPCC bit 2

EPCC bit 1

EPCC bit 0

5

[55:54]

53

Reserved

EPCC bit 5

52

Touch threshold bit 2

Touch threshold bit 1

Touch threshold bit 0

Proximity threshold bit 1

Proximity threshold bit 0

6

7

51

50

49

48

[63:56]

Frame counter

6.3

Output polarity

The polarity can be chosen to define POUT and TOUT active state during a detection event

such as high or low.

When the device is configured in output active low, pin 8 is in open drain configuration.

When the device is configured in output active high, pin 8 is in push-pull configuration.

32/65

DocID18315 Rev 6

STM8T143

Device operation

6.4

Power modes

The STM8T143 device offers four power modes which are specifically designed for battery

applications:

•

Normal power mode

Low power mode 1

Low power mode 2

Low power mode 3

The difference between the four power modes is the t

time (see Table 16: General

SAMPLING

capacitive sensing characteristics). By selecting low power modes, extra delays are

interlaced between bursts resulting in a longer t period. This improves the device

SAMPLING

current consumption at the expense of a longer response time.

DocID18315 Rev 6

33/65

64

Typical application diagram

STM8T143

7

Typical application diagram

Figure 17. Typical application schematic for Control mode

s

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1. R_Xis optional for added ESD protection

2. Active low open drain output pin or push-pull active high

3. Keep track as short as possible

4. C_VDDis optional for added IC stability

5. Please refer to Table 8: Current characteristics for the maximum output load drive current capability

Figure 18. Typical application schematic for Dual output mode

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2. Active low open drain output pin or push-pull active high.

3. Keep track as short as possible

4. C_VDDis optional for added IC stability

5. Please refer to Table 8: Current characteristics for the maximum output load drive current capability

34/65

DocID18315 Rev 6

STM8T143

Typical application diagram

Figure 19. Typical application schematic for Data streaming mode

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1. R_Xis optional for added ESD protection

2. Open drain output pin

3. Keep track as short as possible

4. C_VDDis optional for added IC stability

5. Please refer to Table 8: Current characteristics for the maximum output load drive current capability

DocID18315 Rev 6

35/65

64

Design guidelines

STM8T143

8

Design guidelines

8.1

Sensitivity adjustment

Several factors impact device sensitivity:

•

The sensing electrode material and size

The touch panel material and thickness

The board layout and in particular the sensing signal tracks

The ground coupling of the object (finger or hand) and sensor

The touch or proximity detection threshold selected

8.1.1

PCB layout and construction

The PCB traces, wiring, and components associated or in contact with C pins become

X

touch sensitive and should be treated with caution to limit the touch area to the desired

location.

Even with AET it is important to limit the amount of stray capacitance on the C pin. This can

X

be done by minimizing trace lengths and widths. To minimize cross-coupling, tracks from

adjacent sensing channel should not run close to each other for long distances. For detailed

information, refer to application note AN2869.

36/65

DocID18315 Rev 6

STM8T143

Electrical characteristics

9

Electrical characteristics

9.1

Parameter conditions

Unless otherwise specified, all voltages are in reference to V

.

SS

9.1.1

Minimum and maximum values

Unless otherwise specified, the minimum and maximum values are guaranteed in the worst

conditions of ambient temperature and supply voltage by tests in production on 100% of the

devices with an ambient temperature at T = 25 °C.

A

Data based on characterization results, design simulation and/or technology characteristics

are indicated in the table footnotes and are not tested in production.

9.1.2

9.1.3

9.1.4

Typical values

Unless otherwise specified, typical data are based on T = 25 °C, and V = 5 V. They are

given only as design guidelines and are not tested.

A

DD

Typical curves

Unless otherwise specified, all typical curves are given only as design guidelines and are

not tested.

Loading capacitor

The loading conditions used for pin parameter measurement are shown in Figure 20.

Figure 20. Pin loading conditions

Output pin

50 pF

DocID18315 Rev 6

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64

Electrical characteristics

STM8T143

9.2

Absolute maximum ratings

Stresses above those listed as “absolute maximum ratings” may cause permanent damage

to the device. This is a stress rating only and functional operation of the device under these

conditions is not implied. Exposure to maximum rating conditions for extended periods may

affect device reliability.

Table 7. Voltage characteristics

Symbol

Ratings

Maximum value

Unit

V_DD− V_SSSupply voltage

6.8⁽¹⁾

V

1. Care must be taken as option bit could be modified if this voltage is higher than 5.5 V.

Table 8. Current characteristics

Symbol

Ratings

Maximum value

Unit

I_VDD

I_VSS

Total current into V_DDpower lines (source)⁽¹⁾

Total current out of V_SSground lines (sink)⁽¹⁾

Output current sunk by output pin

2

1

mA

I_IO

Output current sourced by output pin

1. All power (V_DD) and ground (V_SS) lines must always be connected to the external supply.

Table 9. Thermal characteristics

Symbol

Ratings

Storage temperature range

Value

Unit

T_STG

− 65 to +150

°C

Junction temperature range (SO8 narrow and UFDFPN8

package)

T_J

90

°C

9.3

Operating conditions

9.3.1

General operating conditions and supply characteristics

Table 10. Operating characteristics

Symbol

Parameter

Min.

Max.

Unit

V_DD

T_A

Supply voltage

2.3

-40

5.5

V

Operating temperature

+85

°C

Turn-on slope

(rise time rate)

0

10

t_VDD

mS/V

Turn-off slope

(fall time rate)

10⁽¹⁾

1. The supply voltage must reach 0 V when it drops below the minimum operating voltage.

38/65

DocID18315 Rev 6

STM8T143

Electrical characteristics

9.3.2

Average current consumption

Test conditions: T = 25 °C, C = 20 pF, and R = 2 kΩ

A

X

Table 11. Average current consumption

Symbol

Parameter

Conditions

Typ.

Max. Unit

Normal power mode⁽¹⁾

Low power mode 1⁽²⁾

Low power mode 2⁽²⁾

Low power mode 3⁽²⁾

Control halt mode⁽²⁾

Normal power mode⁽¹⁾

Low power mode 1⁽²⁾

Low power mode 2⁽²⁾

Low power mode 3⁽²⁾

Control halt mode⁽²⁾

60

30

17

11

2

75

-

3.05 ≤ V_DD≤ 5.5

-

7

I_DD

µA

60

45

-

V_DD= 2.3 V

-

2

7

1. Tested in production.

2. Not applicable for Silicon revision 1, please refer to the STM8T143 errata sheet (STM8T143 device

limitations).

Note:

Consumption does not depend on detection thresholds.

9.3.3

I/O pin characteristics

Table 12. OUT/TOUT/DATA streaming pin characteristics

Symbol

Parameter

V_DD= 5 V

_DD= 3.3 V

Conditions

Min⁽¹⁾

Typ.

Max.⁽¹⁾

Unit

V_DD-0.1 V_DD-0.1

-

V

V_DD-0.1 V_DD-0.1

V_DD-0.2 V_DD-0.1

V_OH

V_DD= 2.5 V

V_DD= 2.3 V

V_DD= 5 V

-

I_LOAD= 1 mA

T_A= @ 25 °C

V

-

0.06

0.07

0.08

0.09

V_DD= 3.3 V

V_DD= 2.5 V

V_OL

V_DD= 2.3 V

Input leakage

current⁽²⁾

I_lkg

-1

-

1

µA

1. Guaranteed by characterization, not tested in production.

2. The maximum value may be exceeded if negative current is injected on adjacent pins.

DocID18315 Rev 6

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64

Electrical characteristics

Symbol

STM8T143

Table 13. POUT/TOUT pin characteristics

Parameter

V_DD= 5 V

Conditions

Min⁽¹⁾

Typ.

Max.⁽¹⁾

Unit

V_DD-0.1 V_DD-0.1

-

V_DD= 3.3 V

V_DD= 2.5 V

V_OH

3.4

2.4

-

V

_DD= 2.3 V

V_DD-0.1 V_DD-0.1

-

I_LOAD= 1 mA

T_A= @ 25 °C

V

V_DD= 5 V

-

0.03

0.05

0.04

0.05

0.07

V_DD= 3.3 V

V_OL

V_DD= 2.5 V

V_DD= 2.3 V

Input leakage

current⁽²⁾

I_lkg

-

-1

-

1

µA

1. Guaranteed by characterization, not tested in production.

2. The maximum value may be exceeded if negative current is injected on adjacent pins.

Table 14. CTRL pin characteristics

Symbol

Parameter

V_DD= 5 V

_DD= 3.3 V

V_DD= 2.5 V

_DD= 2.3 V

Conditions

Min⁽¹⁾

Max.⁽¹⁾

Unit

-

0.5

V

0.3

V_IL

-

0.25

V

-

0.2

T_A= @ 25 °C

V

V_DD= 5 V

4.5

3.0

2.25

1.8

-1

-

V_DD= 3.3 V

V_IH

V_DD= 2.5 V

-

V_DD= 2.3 V

-

I_lkg

Input leakage current⁽²⁾

-

1

µA

1. Guaranteed by characterization, not tested in production.

2. The maximum value may be exceeded if negative current is injected on adjacent pins.

40/65

DocID18315 Rev 6

STM8T143

Electrical characteristics

9.4

Regulator and reference voltage

Table 15. Regulator and reference voltage

Symbol

Parameter

Condition

Min.

Typ.

Max.

Unit

Voltage regulator decoupling

capacitance⁽¹⁾

C_ref

-

1

-

10

µF

3.05 ≤ V_DD≤ 5.5

^2.3≤ V_DD≤ 2.65

2.35

-

2.5

2.75

-

Regulated voltage during

acquisition⁽²⁾

V_reg

V

V_DD-0.15

1. Equivalent serial R_resistor≤ 0.2 Ω at 1 MHz.

2. Operating above 3.05 V improves the device noise rejection. Between 2.65 V and 3.05 V the regulated voltage evolves

gradually between VDD - 0.15 V and the regulated voltage.

DocID18315 Rev 6

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64

Electrical characteristics

STM8T143

9.5

Capacitive sensing characteristics

The values in Table 16: General capacitive sensing characteristics are guaranteed by

design. They include the oscillator tolerance, the t

influence.

period, and the debouncing

SAMPLING

.

Table 16. General capacitive sensing characteristics

Symbol

f_TRANSFER

Parameter

Charge-transfer frequency

Min

Typ

Max

Unit

200⁽¹⁾

250

9

300⁽¹⁾

kHz

Normal power mode

7

11

Low power mode 1

21

27

33

(2)

t_SAMPLING

Low power mode 2

80

100

300

59

120

Low power mode 3

240

360

t_AET

t_CTRL

Automatic electrode tuning process time⁽³⁾

Acquisition halt or reference freeze control

CTRL pin pulse duration for recalibration

Normal power mode

-

40

-

ms

t_{recal_control}

24

30

36

-

60

-

Low power mode 1

-

125

315

850

3

-

Response time⁽⁴⁾

Low power mode 2

-

Low power mode 3

-

t_{AET_HALT}

R_FTh

AET HALT period after end of detection

ECS filter freeze threshold in release state

ECS filter freeze threshold in touch state

-

s

-

Ref ±8

Ref +16

1600

200

250

300

350

400

550

700

850

-

T_FTh

-

AET target value AET target value

Gain target value A

1344

1856

-

Gain target value B

Gain target value C

Burst count

Gain target value D

Gain

Gain target value E

Gain target value F

Gain target value G

Gain target value H

42/65

DocID18315 Rev 6

STM8T143

Electrical characteristics

Table 16. General capacitive sensing characteristics (continued)

Symbol

Parameter

Min

Typ

Max

Unit

Time after recalibration before optimal device

sensitivity (see Section 6: Device operation).

t_RECAL

-

354

-

Note: this value depends on the signal variation

including noise level

t_SU

Device startup time⁽⁵⁾

-

51

2

-

t_SAMPLING

Detection debounce count (touch)

Detection debounce count (proximity)

End of detection debounce count (touch)

End of detection debounce count (proximity)

Low state voltage value on C_Xduring burst

Acquisition reference voltage

DDC

6

2

EDDC

3

V_CXL

V_trip

0.6

0.8

V

1. Min and max values for f_TRANSFERare given for a 3 V to 5.5 V operating range.

2. If Data streaming mode is activated, t_SAMPLINGis increased by the data frame period. Please refer to Section 9.6:

Streaming mode characteristics.

3.

t_AETdepends on the C_Xcapacitance value. This typical value is given for an electrode of 18 pF

4. Response time for detection depends on the event occurrence time during the acquisition period, the threshold settings,

and the signal strength.

5. The device startup time is the time after power-up before any possible actuation.

Table 17. Internal C value

S

Internal sampling capacitor selection bits (ICS)

C_Scapacitance value (nF)

Typ

ICS2⁽¹⁾

ICS1

ICS0

0

1

0

1

0

1

0

1

0

1

0

1

0

1

1.5

2

3

5

4.5

6

11

17.5

1. This bit is also used for EPCC selection. Please refer to Table 18: Implemented EPCC values (pF).

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64

Electrical characteristics

STM8T143

Table 18. Implemented EPCC values (pF)

ICS bit 2

General name

EPCC name

0

1

EPCC 0

EPCC 1

EPCC 2

EPCC 3

EPCC 4

EPCC 5

0.3

0.6

1.2

2.4

4.8

9.6

18.9

0.6

1.2

2.4

Implemented

capacitance values

4.8

9.6

19.2

37.8

Maximum PCC capacitance value

Table 19. External sensing component characteristics

Symbol

Parameter

Min.

Typ.

Max.

Unit

C_X

C_T

R_X

Equivalent electrode capacitance

Equivalent touch capacitance

Electrode serial resistance

1

-

60

-

pF

5

2

-

22

kOhm

9.6

Streaming mode characteristics

Table 20. Data streaming timing characteristics

Symbol

Parameter

Typ.

Unit

t_START

t_BIT

DATA low time

Data bit time

17

29

µs

t_STOP

DATA high time

Figure 21. Data streaming timing diagram

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44/65

DocID18315 Rev 6

STM8T143

Electrical characteristics

9.7

EMC characteristics

Susceptibility and emission tests are performed on a sample basis during product

characterization.

Both the sample and its applicative hardware environment are mounted on a dedicated

specific EMC board defined in the IEC61967-1 standard.

9.7.1

Functional EMS (electromagnetic susceptibility)

While running in the above described environment the product is stressed by two

electromagnetic events until a failure occurs.

•

ESD: Electrostatic discharge (positive and negative) is applied on all pins of the device

until a functional disturbance occurs. This test complies with the IEC 1000-4-2

standard.

•

FTB: A burst of fast transient voltage (positive and negative) is applied to V and V

through a 100 pF capacitor, until a functional disturbance occurs. This test complies

DD

SS

with the IEC 1000-4-4 standard.

A device reset allows normal operations to be resumed. The test results are given in

Table 21 based on the EMS levels and classes defined in application note AN1709.

9.7.2

9.7.3

Prequalification trials

Table 21. EMS data

Symbol

Parameter

Conditions

Level/class

Fast transient voltage burst limits to be

V_EFTBapplied through 100pF on V_DDand V_SSpins UFDFPN8 package, complies

V_DD= 5 V, T_A=+25 °C,

4A

to induce a functional disturbance

with IEC 1000-4-4

Electromagnetic interference (EMI)

Emission tests conform to the IEC61967-2 standard for board layout and pin loading. Worse

case EMI measurements are performed during maximum device activity.

Table 22. EMI data

Monitored

frequency band

RC_{OSC =}

1 MHz ⁽¹⁾

Symbol

Parameter

General conditions

Unit

0.1 MHz to 30 MHz

30 MHz to 130 MHz

130 MHz to 1 GHz

-

-4

-3

-4

1

V_DD= 5 V, T_A= +25 °C,

UFDFPN8 package,

Complies with SAE

J1752/3, No finger on

touch electrode

Peak level

S_EMI

dBµV

SAE EMI level

1. Data based on characterization results, not tested in production.

DocID18315 Rev 6

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64

Electrical characteristics

STM8T143

9.7.4

Absolute maximum ratings (electrical sensitivity)

Based on two different tests (ESD and LU) using specific measurement methods, the

product is stressed in order to determine its performance in terms of electrical sensitivity.

For more details, refer to the application note AN1181.

9.7.5

Electrostatic discharge (ESD)

Electrostatic discharges (3 positive then 3 negative pulses separated by 1 second) are

applied to the pins of each sample according to each pin combination. The sample size

depends on the number of supply pins in the device (3 parts*(n+1) supply pin). This test

conforms to the JESD22-A114A/A115A standard. For more details, refer to the application

note AN1181.

M

Table 23. ESD absolute maximum ratings

Maximum

Symbol

Ratings

Conditions

Class

Unit

value⁽¹⁾

Electrostatic discharge voltage

(Human body model)

T_A= +25°C, conforming

V_ESD(HBM)

3A

IV

4

to JESD22-A114

kV

Electrostatic discharge voltage

(Charge device model)

T_A= +25°C, conforming

to JESD22-C101

V_ESD(CDM)

1

1. Data based on characterization results, not tested in production

9.7.6

Static latchup

Two complementary static tests are required on 10 parts to assess the latchup performance.

•

A supply overvoltage (applied to each power supply pin) and

A current injection (applied to each input, output and configurable I/O pin) are

performed on each sample.

This test conforms to the EIA/JESD 78 IC latchup standard. For more details, refer to

application note AN1181.

Table 24. Electrical sensitivities

Symbol

Parameter

Conditions

Class⁽¹⁾

T_A= +25 °C

T_A= +85 °C

LU

Static latchup

A

1. Class description: A class is an STMicroelectronics internal specification. All its limits are higher than the

JEDEC specifications, that means when a device belongs to class A it exceeds the JEDEC standard.

Class B strictly covers all the JEDEC criteria (international standard).

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Package characteristics

10

Package characteristics

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®

specifications, grade definitions and product status are available at www.st.com.

ECOPACK® is an ST trademark.

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Package characteristics

STM8T143

10.1

Package mechanical data

10.1.1

SO8 package mechanical data

Figure 22. SO8-lead plastic small outline - package outline

h x 45˚

A2

A

c

ccc

b

e

0.25 mm

D

GAUGE PLANE

k

8

1

E1

E

L

A1

L1

SO-A

Table 25. SO8-lead plastic small outline - package mechanical data

millimeters

Typ

inches ⁽¹⁾

Symbol

Min

Max

Min

Typ

Max

A

-

1.750

0.250

-

0.0689

0.0098

-

A1

A2

b

0.100

1.250

0.280

0.170

-

0.0039

0.0492

0.0110

0.0067

-

0.480

0.230

0.100

5.000

6.200

4.000

-

0.0189

0.0091

0.0039

0.1969

0.2441

0.1575

-

c

-

ccc

D⁽²⁾

E

-

4.800

5.800

3.800

-

4.900

6.000

3.900

1.270

-

0.1890

0.2283

0.1496

-

0.1929

0.2362

0.1535

0.0500

-

E1⁽³⁾

e

h

0.250

0°

0.500

8°

0.0098

0°

0.0197

8°

k

-

L

0.400

-

1.270

-

0.0157

-

0.0500

-

L1

1.040

0.0409

1. Values in inches are rounded to 4 decimal digits

2. Dimension D does not include mold flash, protrusions or gate burrs. Mold flash, protrusions or gate burrs

should not exceed 0.15mm in total (both side).

3. Dimension E1 does not include interlead flash or protrusions. Interlead flash or protrusions should not

exceed 0.25 mm per side.

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Package characteristics

Figure 23. SO8 narrow recommended footprint (dimensions in mm)

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DocID18315 Rev 6

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64

Package characteristics

STM8T143

10.1.2

UFDFPN8 package mechanical data

Figure 24. UFDFPN8-lead ultra thin fine pitch dual flat package (MLP) package outline

e

b

D

L1

L3

E

E2

L

A

D2

ddd

A1

UFDFPN-01

Table 26. UFDFPN8-lead ultra thin fine pitch dual flat - package mechanical data

millimeters

Typ

inches ⁽¹⁾

Symbol

A⁽²⁾

Min

Max

Min

Typ

Max

0.450

0.000

0.200

1.900

1.500

2.900

0.100

-

0.550

0.020

0.250

2.000

1.600

3.000

0.200

0.500

0.450

-

0.600

0.050

0.300

2.100

1.700

3.100

0.300

-

0.0177

0.0000

0.0079

0.0748

0.0591

0.1142

0.0039

-

0.0217

0.0008

0.0098

0.0787

0.0630

0.1181

0.0079

0.0197

0.0177

-

0.0236

0.0020

0.0118

0.0827

0.0669

0.1220

0.0118

-

A1

b

D

D2

E

E2

e

L

0.400

-

0.500

0.150

-

0.0157

-

0.0197

0.0059

-

L1

L3

0.300

-

0.0118

-

Tolerance

ddd ⁽³⁾

millimeters

0.080

inches

0.0031

-

1. Values in inches are rounded to 4 decimal digits

2. In order to prevent undesired effects such as spurious detections or modified sensitivity the UFDFPN8

package should not be directly exposed to light sources (visible or invisible).

3. Applied for exposed die paddle and terminals. Exclude embedding part of exposed die paddle from

measuring.

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Package characteristics

Figure 25. UFDFPN 2 x 3 mm recommended footprint (dimensions in mm)

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1. Drawing is not to scale.

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64

Package characteristics

STM8T143

10.2

Package thermal characteristics

The maximum chip junction temperature (T

) must never exceed the values given in

Jmax

Table 10: Operating characteristics on page 38.

The maximum chip-junction temperature, T

using the following equation:

, in degrees Celsius, may be calculated

Jmax

T

= T

+ (P

x Θ )

Jmax

Amax

Dmax JA

Where:

•

T

is the maximum ambient temperature in °C

is the package junction-to-ambient thermal resistance in ° C/W

Amax

Θ

P

JA

is the sum of P

and P

(P

= P

+ P

)

I/Omax

Dmax

INTmax

I/Omax

Dmax

INTmax

P

is the product of I and V , expressed in Watts. This is the maximum chip

DD DD

INTmax

internal power.

•

P

represents the maximum power dissipation on output pins

I/Omax

Where:

P

= Σ (V *I ) + Σ((V -V *I ),

I/Omax

OL OL

DD OH) OH

taking into account the actual V /I

V

/I

OL OL and OH OH of the I/Os at low and high level in the

application.

Table 27. Thermal characteristics

Symbol

Parameter

Value

Unit

Thermal resistance junction-ambient

SO8 (narrow)

Θ_JA

130

°C/W

Thermal resistance junction-ambient

UFDFPN 8 (2 x 3 mm)

Θ_JA

120

°C/W

Note:

Thermal resistances are based on JEDEC JESD51-2 with 4-layer PCB in a natural

convection environment.

10.2.1

Reference document

JESD51-2 integrated circuits thermal test method environment conditions - natural

convection (still air). Available from www.jedec.org.

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Ordering information

11

Ordering information

11.1

STM8T143 ordering information scheme

Figure 26. STM8T143 ordering information scheme

Example:

STM8T 143

A

U

XXXY TR

Device type

STM8T: ST touch sensing MCU

Device sub-family

143 = 1 proximity detection channel

Pin count

A: 8 pins

Package

M: SO8 (narrow outline)

U: UFDFPN8 (dual flat no lead)

Device configuration

XXXY: device with specific configuration⁽¹⁾

61T: Revision 1/OTP blank device (all user bits set to 0)⁽²⁾

62T: Revision 2/OTP blank device (all user bits set to 0)⁽²⁾

Packing

No character: tray or tube

TR: tape and reel

1. See explanation below of “in factory option byte programming service”

2. The STM8T143 OTP devices are available for development and production. These parts are blank devices

with unconfigured option bytes (all option bits are set to ‘0’).

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64

Ordering information

STM8T143

11.2

Orderable favorite device lists

The STM8T143 OTP devices listed below are available for development and production.

These parts are blank devices or configured with a specific configuration. See Table 28.

Contact STMicroelectronics sales office for availability.

11.2.1

Part number option bytes

Table 28. Option byte values

Part number

OPT0

OPT1

OPT2

STM8T143AM61T

0x00

0xC8

0xF0

0xE0

0x00

0x01

0x00

0x10

0x00

0x10

STM8T143AM62T

STM8T143AUTAB2TR

STM8T143AUMEI2TR

STM8T143AULET2TR

11.3

In-factory option byte programming service

For specific configurations, in-factory option byte programming is available on customer

request and for large order quantities. Customers have to fill out the option list (see below)

and send it back to STMicroelectronics. Customers are then informed by

STMicroelectronics about the ordering part number corresponding to the customer

configuration. The XXXY digits of the final ordering part number (e.g. STM8T143AUXXXY)

depends on the device configuration and firmware revision number and is assigned by

STMicroelectronics.

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Ordering information

11.4

Revision code on device markings

Table 29, Figure 27 and Figure 28 show the part numbers and standard marking

composition for the UFDFPN8 and SO8 packages respectively.

Table 29. Device identification

Part no.

SO8 package

Part no.

UFDFPN8 package

Marking

Rev no.

SO8 package⁽¹⁾UFDFPN8 package⁽²⁾

1

2

3

4

5

STM8T143AM61T

STM8T143AU61T

STM8T143AU62T

8T143A61

T143AM62

N/A

T143

1432

TAB

MEI

STM8T143AM62T

N/A

STM8T143AUTAB2TR

STM8T143AUMEI2TR

STM8T143AULET2TR

N/A

LET

1. See Figure 27: SO8 package marking.

2. See Figure 28: UFDFPN8 package marking.

Figure 27. SO8 package marking

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Ordering information

STM8T143

Figure 28. UFDFPN8 package marking

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Ordering information

STM8T143 programming service option list Rev 6 (last update: October 2013)

Customer name:

Address:

Contact name:

Phone number

Customer settings (tick one box by option)

Package type:

□ DFN8: STM8T143AU

□ SO8: STM8T143AM(1)

Output type (used only in CTRL mode – see Section 6.2.2: Control mode)

□ Proximity output⁽²⁾

□ Touch output

Release threshold ratio (see Section 5.3: Detection and release thresholds)

□ 75 %⁽²⁾

□ 87.5 %

Gain target

□ Gain target value A (200)⁽²⁾

□ Gain target value B (250)

□ Gain target value C (300)

□ Gain target value D (350)

□ Gain target value E (400)

□ Gain target value F (550)

□ Gain target value G (700)

□ Gain target value H (850)

Data streaming mode (see Section 6.2.3: Data streaming mode)

□ Disabled⁽²⁾

□ Enabled

Low power mode (see Section 6.4: Power modes and Table 16: General capacitive sensing

characteristics)

□ Normal power mode⁽²⁾

□ Low power mode 1

□ Low power mode 2

□ Low power mode 3

Reference freeze timeout t_RFT(see Section 5.5.3: Reference freeze and reference freeze timeout)

□ Infinite⁽²⁾

□ 18 s

□ 60 s

□ 3 s

Dynamic calibration delay t_DYCAL(see Section 5.4: Dynamic calibration (DYCAL))

□ 250 ms⁽²⁾

□ 1 s

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Ordering information

STM8T143

STM8T143 programming service option list Rev 6 (last update: October 2013)

Customer name:

Address:

Contact name:

Phone number

Customer settings (tick one box by option)

Dual/Control mode (see Section 6.2.1: Dual output mode and Section 6.2.2: Control mode)

□ Pin 8 in control input⁽²⁾

□ Pin 8 in proximity output mode

Touch detection threshold (see Section 5.3: Detection and release thresholds)

□ Touch detection (TTh) threshold value 40⁽²⁾

□ Touch detection (TTh) threshold value 60

□ Touch detection (TTh) threshold value 100

□ Touch detection (TTh) threshold value 200

□ Touch detection (TTh) threshold value 340

□ Touch detection (TTh) threshold value 500

□ Touch detection (TTh) threshold value 700

□ Touch detection (TTh) threshold value 900

Proximity detection threshold (see Section 5.3: Detection and release thresholds)

□ Proximity detection (PTh) threshold value 4⁽²⁾

□ Proximity detection (PTh) threshold value 8

□ Proximity detection (PTh) threshold value 16

□ Proximity detection (PTh) threshold value 32

Output polarity (see Section 6.3: Output polarity)⁽³⁾

□ Active low⁽²⁾

□ Active high

Control type (see Section 6.2.2: Control mode)

□ Halts conversion control⁽²⁾

□ Reference freeze control

Packaging

□ Tape and reel

□ Tray or tube

(1) Fastrom is not available in SO8 device.

(2) Configuration by default in OTP devices.

(3) Effective only when data streaming mode is disabled

Comment:

Signature:

Date:

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STM8T143 programming tool

12

STM8T143 programming tool

Figure 29 shows the STM8T143 programming tool.

To program the device option bytes the following materials are available:

•

Programming socket board (STM8T14X-SB). When connected to the programming

dongle, this board allows the programming of SO8 or UFDFPN8 devices.

•

A programming dongle (ST-TSLINK) and its associated programming software, STVP.

Figure 29. STM8T143 programming tool

Programming socket board (STM8T14X-SB)

Programming dongle (ST-TSLINK)

Table 30. Ordering information

Part number

Order codes

Description

ST-TSLINK

STM8T143 programming dongle

STM8T143 socket board

STM8T14X-SB

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Revision history

STM8T143

13

Revision history

Table 31. Document revision history

Changes

Date

Revision

17-May-2011

1

Initial release

Features: updated bullet about low power management.

Block diagram: updated Figure 1: STM8T143 block diagram,

removed Power-on-reset (POR), and updated Advanced ProxSense

engine.

Section 4.3: Internal sampling capacitor: added ‘to fit a wide range

of applications’.

Section 5: STM8T143 processing: realigned bullet points according

to order of subsections.

Section 5.2: Signal calculation and reference calibration: updated

Section 5.3: Detection and release thresholds: updated

Figure 7: Automatic electrode tuning (AET): replaced

Figure 8: Signal reference and detection threshold (not detailed):

replaced.

Figure 9: DYCAL general operation: replaced

Figure 10: DYCAL operation with water residue: replaced

Figure 11: No DYCAL: updated

Added Figure 12: IIR filter formula

Section 5.5.2: ECS halt: in Figure 14: Unwanted detection managed

by the reference freeze timeout: replaced ‘reference - D_Th’ with

‘Reference - PTh’; added note 5.5.4.

31-Aug-2011

2

Section 5.4: Dynamic calibration (DYCAL): updated

Added Section 5.5.4: ECS filter constant adjustment and Figure 15:

ECS filter K constant management.

Removed Reference freeze timeout figure

Section 5.7: Host control input: updated

Table 3: Option byte description: updated OPT2 (bit 4), OPT0 (bits

[7:5] and [4:3]).

Table 6: Data streaming frame: updated description of bit 47 (byte 5).

Table 8: Current characteristics: updated I_VDD, I_VSS, and I_IOmax

values.

Table 11: Average current consumption: updated all typ and max

values; updated footnotes.

Table 12: OUT/TOUT/DATA streaming pin characteristics: replaced

all TBDs with values; added condition 25 °C; added footnote 1.

Table 13: POUT/TOUT pin characteristics: replaced all TBDs with

values; added condition 25 °C; added footnote 1.

Table 14: CTRL pin characteristics: replaced all TBDs with values;

added condition 25 °C; added footnote 1.

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Revision history

Table 31. Document revision history (continued)

Revision Changes

Date

Table 16: General capacitive sensing characteristics: updated

f_TRANSFER, response time, and device startup time parameters;

added min and max values for t_SAMPLING,and AET target value

parameter; added footnotes 1. and 5.; updated footnote 4.

Table 17: Internal CS value: added ICS bit values.

Table 18: Implemented EPCC values (pF): added EPCC6 and

capacitance bit 6 values.

Table 21: EMS data: removed V_FESDparameter and added

level/class for V_EFTBparameter.

2

31-Aug-2011

cont’d

Table 22: EMI data: added values for RC_OSC= 1 MHz.

Table 23: ESD absolute maximum ratings: updated class, max value

and unit.

Table 24: Electrical sensitivities: added class value.

Table 26: UFDFPN8-lead ultra thin fine pitch dual flat - package

mechanical data: added footnote 2.

Updated programming service option list.

Added SO8 package and updated all information relating to this

package throughout document.

Figure 3: UFDFPN8 pinout: updated pins 1 and 8.

Table 1: STM8T143 pin descriptions: updated layout and content.

Figure 5: STM8T143 measuring circuitry: changed “STM8T143” to

“Device”.

Section 4.4: Electrode parasitic capacitance compensation (EPCC):

removed text concerning EPCC hardware and fixed compensation

capacitance.

Section 5: STM8T143 processing: updated title; updated second

bullet point to “signal and reference calibration”.

Section 5.1: Automatic electrode tuning (AET): text updated to

improve technical clarity and readability, values replaced; updated

and improved appearance of Figure 7: Automatic electrode tuning

(AET).

15-Nov-2011

3

Section 5.2: Signal calculation and reference calibration: removed

bullet points regarding AET; small text changes.

Section 5.3: Detection and release thresholds: small text changes,

corrections and clarifications; updated title, improved appearance,

and removed ‘t_DYCAL’ from Figure 8: Signal reference and detection

threshold (not detailed).

Section 5.4: Dynamic calibration (DYCAL): small text changes and

corrections; updated titles and content of Figure 9: DYCAL general

operation and Figure 10: DYCAL operation with water residue;

improved appearance of all figures in this section.

Section 5.5.2: ECS halt: updated appearance of Figure 13: ECS halt

and removed note 2 underneath it.

Section 5.5.3: Reference freeze and reference freeze timeout:

moved section to current location; updated title and improved

appearance of Figure 14: Unwanted detection managed by the

reference freeze timeout.

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Revision history

STM8T143

Table 31. Document revision history (continued)

Revision Changes

Date

Section 5.5.4: ECS filter constant adjustment: updated title and

added reference to Figure 15: ECS filter K constant management.

Section 5.6: Debounce filter: removed last sentence of this section

which concerned the HALT function.

Section 5.7: Host control input and Section 5.7.1: CTRL pin

management: removed.

Section 6: Device operation: updated bullet points concerning

Control, Dual output, and Data streaming modes.

Table 2: Option bytes: updated abbreviations for touch and proximity

detection thresholds.

Table 3: Option byte description: small corrections to bit 5 (OPT2), bit

0 (OPT 1) and bit 0 (OPT 0); added gain target values (instead of A,

B, C etc.) for bits [3:1] of OPT 2.

Section 6.2.1: Dual output mode: renamed section; added Table 4:

Pin 1 configuration and Table 5: Pin 8 configuration.

Section 6.2.2: Control mode: small text changes and corrections;

added final explanatory sentence to Reference freeze control mode.

Section 6.2.3: Data streaming mode: small text changes and

corrections; updated bits 34, 47, 46, and 45 of Table 6: Data

streaming frame.

Section 6.4: Power modes: moved to the end of Section 6.

Section 7: Typical application diagram: moved after Section 6:

Device operation.

Figure 17: Typical application schematic for Control mode: renamed

figured and updated content and footnotes.

3

15-Nov-2011

cont’d

Figure 18: Typical application schematic for Dual output mode:

renamed figured and updated content and footnotes.

Figure 19: Typical application schematic for Data streaming mode:

renamed figured and updated content and footnotes.

Table 7: Voltage characteristics: updated max value of supply

voltage parameter and added footnote 1.

Table 11: Average current consumption: updated with new typ and

max values; updated first condition; replaced “Conversion” with

“Control”; updated footnote 2.

Table 12: OUT/TOUT/DATA streaming pin characteristics: removed

footnote 1. from “Typ” column.

Table 13: POUT/TOUT pin characteristics: added “TOUT” to table

title; removed footnote 1. from “Typ” column.

Table 15: Regulator and reference voltage: updated first condition.

Section 9.5: Capacitive sensing characteristics: removed “Test

conditions: T_A= 25 °C”; placed note at the end of this table at the

beginning.

Table 16: General capacitive sensing characteristics: added typ

value for parameter “CTRL pin pulse duration for recalibration”;

added typ values for parameters “Low power modes 1, 2, and 3” and

removed footnote associated with them; replaced “release” with

“touch” in the parameter “ECS filter freeze threshold in touch state”;

small corrections to footnotes 3. and 4.

Table 17: Internal CS value: added typ value to “C_Scapacitance

value (nF) parameter; added footnote 1.

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Revision history

Table 31. Document revision history (continued)

Revision Changes

Date

Table 18: Implemented EPCC values (pF): updated title; replaced

name of bit; removed EPCC 6 data, updated “Maximum PCC

capacitance value”; added footnote 1.

Figure 23: SO8 narrow recommended footprint (dimensions in mm):

added.

Figure 25: UFDFPN 2 x 3 mm recommended footprint (dimensions in

mm): added.

Figure 26: STM8T143 ordering information scheme: updated

package and device configuration information; updated footnote 2.

3

15-Nov-2011

cont’d

Section 11.2: Orderable favorite device lists: updated rev 1

UFDFPN8 OTP device and added rev 2 UFDFPN8 OTP device.

Figure 27: SO8 package marking: added.

Figure 28: UFDFPN8 package marking: added.

Updated programming service option list.

Section 12: STM8T143 programming tool: updated first bullet point

and replaced Figure 29: STM8T143 programming tool.

Updated all information relating to Control mode.

Figure 2: SO8 pinout, Figure 3: UFDFPN8 pinout and Table 1:

STM8T143 pin descriptions:Updated Pin 1 name to “OUT”.

Table 10: Operating characteristics: Updated Min. value of V_DD

.

Table 11: Average current consumption: Updated V_DDconditions.

Table 12: OUT/TOUT/DATA streaming pin characteristics and

Table 13: POUT/TOUT pin characteristics: Updated Min. and Typ.

values of V_OH. Updated list of V_DDparameter. Added I_lkgparameter.

Table 14: CTRL pin characteristics: Updated list of V_DDparameter.

12-Sep-2012

4

Added I_lkgparameter.

Table 15: Regulator and reference voltage: Added note 2. Updated

V_regconditions, Min. and Max. values.

Table 16: General capacitive sensing characteristics: Updated Min.

and Max. values. Added V_tripparameter.

Table 18: Implemented EPCC values (pF): Moved note 1. on ICS bit

2 definition.

Updated programming service option list.

Section 12: STM8T143 programming tool: updated part number of

Programming socket board.

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Revision history

STM8T143

Table 31. Document revision history (continued)

Date

Revision

Changes

Updated Table 7: Voltage characteristics.

Replaced any occurrence of t_{DYCAL_T}by t_DYCAL

In Table 2: Option bytes, replaced:

.

– "tDYCAL" by "Dynamic calibration delay"

– "Touch detection threshold (TTh)" by "Touch detection threshold“

– “Proximity detection threshold (PTh)” by “Proximity detection

threshold”.

In Table 3: Option byte description

– replaced the release threshold ratio of 90% by 87.5%.

– renamed “Reference freeze timeout" by "Reference freeze timeout

(tRFT) "

17-Apr-2013

5

– updated the value information for the Reference freeze timeout

– renamed "tDYCAL" by "Dynamic calibration delay (tDYCAL)"

– updated the value information for the Dynamic calibration delay

Removed tRFT and tDYCAL rows in Table 16: General capacitive

sensing characteristics

Updated the “programming service option list” form in Section 11.4:

Revision code on device markings

Changed “Touch output” signal rising edge position in Figure 9:

DYCAL general operation and Figure 10: DYCAL operation with

water residue

Modified note 2 below Table 15: Regulator and reference voltage on

page 41.

Removed note 1 in Table 18: Implemented EPCC values (pF) on

page 44.

Updated Section 11.2: Orderable favorite device lists on page 54

Added Section 11.4: Revision code on device markings on page 55.

Moved Section 11.4: Revision code on device markings on page 55

to Section 11.2.1: Part number option bytes on page 54

Added last two rows in Table 29: Device identification on page 55.

18-Oct-2013

6

Updated the “programming service option list” form in Section 11.4:

Revision code on device markings on page 55.

Added first row in Section : Customer settings (tick one box by

option) on page 57 and insert note.

Added note in Section : □ Proximity output(2) on page 57

Updated Disclaimer content to Rev5-4

Updated Section : (1) Fastrom is not available in SO8 device. on

page 58

Added new code Fastrom in Table 28: Option byte values on

page 54 and Table 29: Device identification on page 55

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STM8T143

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型号：	STM8T143AUMEI2TR
厂家：	ST
描述：	Single-channel capacitive sensor for touch and proximity detection 输出元件传感器换能器
文件：	总65页 (文件大小：1158K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

STM8T143AUMEI2TR [STMICROELECTRONICS]

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