STN2NF10 [STMICROELECTRONICS]

N-CHANNEL 100V - 0.23ohm - 2A SOT-223 STripFET⑩ II POWER MOSFET; N沟道100V - 0.23ohm - 2A SOT- 223 STripFET⑩ II功率MOSFET


型号：	STN2NF10
厂家：	ST
描述：	N-CHANNEL 100V - 0.23ohm - 2A SOT-223 STripFET⑩ II POWER MOSFET N沟道100V - 0.23ohm - 2A SOT- 223 STripFET⑩ II功率MOSFET
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STN2NF10

N-CHANNEL 100V - 0.23Ω - 2A SOT-223

STripFET™ II POWER MOSFET

TYPE

DSS

DS(on)

STN2NF10

100 V

< 0.26 Ω

2 A

■

TYPICAL R (on) = 0.23 Ω

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronis unique "Single Feature Size™"

strip-based process. The resulting transistor

shows extremely high packing density for low on-

resistance, rugged avalanche characteristics and

less critical alignment steps therefore a remark-

able manufacturing reproducibility.

SOT-223

APPLICATIONS

INTERNAL SCHEMATIC DIAGRAM

■

DC-DC & DC-AC COVERTERS

DC MOTOR CONTROL (DISK DRIVERS, etc.)

SYNCHRONOUS RECTIFICATION

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

100

Unit

Drain-source Voltage (V = 0)

Drain-gate Voltage (R = 20 kΩ)

100

DGR

Gate- source Voltage

± 20

I (•)

Drain Current (continuos) at T = 25°C

Drain Current (continuos) at T = 100°C

1.26

(••)

Drain Current (pulsed)

Total Dissipation at T = 25°C

2.5

tot

Derating Factor

0.02

300

W/°C

°C

(1)

Single Pulse Avalanche Energy

Storage Temperature

stg

-65 to 150

150

Max. Operating Junction Temperature

(••) Pulse width limited by safe operating area.

(•) Current limited by the package

(1) I ≤1A, di/dt ≤300A/µs, V ≤ V

, T ≤ T

(BR)DSS j JMAX

December 2001

1/8

STN2NF10

THERMAL DATA

Rthj-pcb

Thermal Resistance Junction-PCB

(1 inch copper board)

°C/W

Rthj-pcb

260

°C/W

°C

Thermal Resistance Junction-PCB (min. footprint)

Maximum Lead Temperature For Soldering Purpose

Typ

ELECTRICAL CHARACTERISTICS (T

= 25 °C unless otherwise specified)

case

OFF

Symbol

Parameter

Drain-source

Test Conditions

Min.

Typ.

Max.

Unit

= 250 µA, V = 0

100

(BR)DSS

Breakdown Voltage

= Max Rating

Zero Gate Voltage

µA

DSS

Drain Current (V = 0)

= Max Rating T = 125°C

Gate-body Leakage

= ± 20V

±100

GSS

Current (V = 0)

(1)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

GS(th)

= V

= 250 µA

= 1 A

Gate Threshold Voltage

= 10 V

Static Drain-source On

Resistance

0.23

0.26

Ω

DS(on)

DYNAMIC

Symbol

Parameter

Test Conditions

>I xR I =1A

Min.

Typ.

Max.

Unit

(*)

Forward Transconductance

2.5

DS D(on)

DS(on)max

= 25V, f = 1 MHz, V = 0

iss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

280

oss

rss

2/8

STN2NF10

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol

Parameter

Test Conditions

= 50 V

Min.

Typ.

Max.

Unit

= 1 A

Turn-on Delay Time

Rise Time

d(on)

= 4.7 Ω

= 10 V

(Resistive Load, Figure 3)

= 80V I = 2A V =10V

D GS

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

2.5

SWITCHING OFF

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

= 80 V

= 2 A

Turn-off Delay Time

Fall Time

Cross-over Time

d(Voff)

clamp

= 4.7Ω,

= 10 V

(Inductive Load, Figure 5)

SOURCE DRAIN DIODE

Symbol

Parameter

Test Conditions

Typ.

Unit

Source-drain Current

Source-drain Current (pulsed)

( )

•

SDM

(*)

= 2 A

= 0

Forward On Voltage

1.2

= 2 A

di/dt = 100A/µs

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

175

= 10 V

T = 150°C

(see test circuit, Figure 5)

RRM

(*)

(

Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

•)Pulse width limited by safe operating area.

Thermal Impedance

Safe Operating Area

3/8

STN2NF10

Output Characteristics

Transfer Characteristics

Transconductance

Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage

Capacitance Variations

4/8

STN2NF10

Normalized Gate Threshold Voltage vs Temperature

Normalized on Resistance vs Temperature

Source-drain Diode Forward Characteristics

5/8

STN2NF10

Fig. 1: Unclamped Inductive Load Test Circuit

Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuits For Resistive

Fig. 4: Gate Charge test Circuit

Load

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times

6/8

STN2NF10

SOT-223 MECHANICAL DATA

mils

TYP.

90.6

181.1

15.7

25.6

DIM.

MIN.

2.27

4.57

0.2

TYP.

2.3

MAX.

2.33

4.63

0.6

MIN.

89.4

179.9

7.9

MAX.

91.7

4.6

182.3

23.6

0.4

0.63

1.5

0.65

1.6

0.67

1.7

24.8

59.1

26.4

66.9

0.32

3.1

12.6

2.9

0.67

6.7

114.2

26.4

118.1

27.6

122.1

28.7

0.7

0.73

7.3

263.8

137.8

248

275.6

137.8

255.9

287.4

145.7

263.8

3.5

6.5

3.7

6.3

6.7

P008B

7/8

STN2NF10

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences

of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted

by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject

to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not

authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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