STN3P6F6 [STMICROELECTRONICS]
P-channel 60 V, 0.13 Ω typ., 3 A STripFET⢠VI DeepGATE⢠Power MOSFET in a SOT-223 package; P沟道60 V ， 0.13 I© （典型值） ，3A STripFETâ ?? ¢六DeepGATEâ ?? ¢功率MOSFET采用SOT- 223封装
| 型号： | STN3P6F6 |
| 厂家： | 
STMICROELECTRONICS |
| 描述： | P-channel 60 V, 0.13 Ω typ., 3 A STripFET⢠VI DeepGATE⢠Power MOSFET in a SOT-223 package |
| 文件： | 总12页 (文件大小：1099K) |
| 下载： | 下载PDF数据表文档文件 |
STN3PF06
P-channel 60 V - 0.20 ヘ - 2.5 A - SOT-223 STripFET⑩ II Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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49
STMICROELECTR
STN3PF06
P-CHANNEL 60V - 0.18ohm - 3A SOT-223 STripFET⑩ II POWER MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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157
STMICROELECTR
STN3PF06_08
P-channel 60 V - 0.20 ヘ - 2.5 A - SOT-223 STripFET⑩ II Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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28
STMICROELECTR
STN4346
STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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28
STANSON
STN4392
STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
25
STANSON
STN4402_V1
N Channel Enhancement Mode MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
156
ETC
STN4412
N Channel Enhancement Mode MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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144
STANSON
STN4412S8RG
N Channel Enhancement Mode MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
39
STANSON
STN4412S8TG
N Channel Enhancement Mode MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
17
STANSON
STN4416
STN4416 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
20
STANSON
STN4426
STN4426 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
59
STANSON
STN4438
STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
217
STANSON
STN4440
STN4440 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
75
STANSON
STN4480
STN4480 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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28
STANSON
STN4488L
STN4488L is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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36
STANSON
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