STP11NK40ZFP [STMICROELECTRONICS]
N-CHANNEL 400V - 0.49ohm - 9A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH⑩Power MOSFET; N沟道400V - 0.49ohm - 9A TO- 220 / TO- 220FP / D2PAK齐纳保护SuperMESH⑩Power MOSFET
| 型号： | STP11NK40ZFP |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 400V - 0.49ohm - 9A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH⑩Power MOSFET |
| 文件： | 总12页 (文件大小：581K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STP11NK40Z - STP11NK40ZFP
STB11NK40Z
N-CHANNEL 400V - 0.49Ω - 9A TO-220/TO-220FP/D2PAK
Zener-Protected SuperMESH™Power MOSFET
TYPE
V
R
I
D
Pw
DSS
DS(on)
STP11NK40Z
STP11NK40ZFP
STB11NK40Z
400 V < 0.55 Ω
400 V < 0.55 Ω
400 V < 0.55 Ω
9 A
9 A
9 A
110 W
30 W
110 W
■
■
■
■
■
■
TYPICAL R (on) = 0.49 Ω
3
DS
2
1
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING
REPEATIBILITY
TO-220
TO-220FP
3
1
2
D PAK
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
HIGH CURRENT, HIGH SPEED SWITCHING
IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
■
■
LIGHTING
ORDERING INFORMATION
SALES TYPE
MARKING
P11NK40Z
PACKAGE
PACKAGING
TUBE
STP11NK40Z
STP11NK40ZFP
STB11NK40ZT4
TO-220
P11NK40ZFP
B11NK40Z
TO-220FP
TUBE
2
TAPE & REEL
D PAK
April 2003
1/12
STP11NK40Z - STP11NK40ZFP - STB11NK40Z
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP11NK40Z
STB11NK40Z
STP11NK40ZFP
V
Drain-source Voltage (V = 0)
400
400
± 30
V
V
DS
GS
V
Drain-gate Voltage (R = 20 kΩ)
DGR
GS
V
Gate- source Voltage
V
GS
I
Drain Current (continuous) at T = 25°C
9
9(*)
5.67(*)
36(*)
30
A
D
C
I
Drain Current (continuous) at T = 100°C
5.67
36
A
D
C
I
( )
Drain Current (pulsed)
A
DM
P
Total Dissipation at T = 25°C
110
0.88
W
TOT
C
Derating Factor
0.24
W/°C
V
V
Gate source ESD(HBM-C=100pF, R=1.5KΩ)
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
3500
4.5
ESD(G-S)
dv/dt (1)
Viso
V/ns
V
--
2500
T
T
stg
Operating Junction Temperature
Storage Temperature
-55 to 150
-55 to 150
°C
°C
j
( ) Pulse width limited by safe operating area
(1) I ≤9A, di/dt ≤200A/µs, V ≤ V , T ≤ T
JMAX.
SD
DD
(BR)DSS
j
(*) Limited only by maximum temperature allowed
THERMAL DATA
TO-220
TO-220FP
2
D PAK
Rthj-case
Rthj-amb
Thermal Resistance Junction-case Max
1.14
4.2
°C/W
°C/W
°C
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
62.5
300
T
l
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
Avalanche Current, Repetitive or Not-Repetitive
9
A
AR
(pulse width limited by T max)
j
E
Single Pulse Avalanche Energy
190
mJ
AS
(starting T = 25 °C, I = I , V = 50 V)
j
D
AR
DD
GATE-SOURCE ZENER DIODE
Symbol
BV
Parameter
Test Conditions
Igs=± 1mA (Open Drain)
Min.
Typ.
Max.
Unit
Gate-Source Breakdown
Voltage
30
V
GSO
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/12
STP11NK40Z - STP11NK40ZFP - STB11NK40Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
Drain-source
Test Conditions
Min.
Typ.
Max.
Unit
V
I
= 1 mA, V = 0
400
V
(BR)DSS
D
GS
Breakdown Voltage
I
Zero Gate Voltage
V
V
= Max Rating
= Max Rating, T = 125 °C
1
50
µA
µA
DSS
DS
DS
Drain Current (V = 0)
GS
C
I
Gate-body Leakage
V
= ± 20 V
±10
µA
GSS
GS
Current (V = 0)
DS
V
V
V
= V , I = 100 µA
Gate Threshold Voltage
3
3.75
0.49
4.5
V
GS(th)
DS
GS
GS
D
R
Static Drain-source On
Resistance
= 10 V, I = 4.5 A
0.55
Ω
DS(on)
D
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
(1)
Forward Transconductance
V
= 15 V I = 4.5 A
5.8
S
fs
DS
, D
C
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
= 25 V, f = 1 MHz, V = 0
930
140
30
pF
pF
pF
iss
DS
GS
C
oss
C
rss
C
(3) Equivalent Output
Capacitance
V
= 0 V, V = 0 V to 400 V
78
pF
oss eq.
GS
DS
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
Turn-on Delay Time
Rise Time
V
R
= 200 V, I = 4.5 A
= 4.7Ω V = 10 V
GS
20
20
ns
ns
d(on)
DD
D
t
r
G
(Resistive Load see, Figure 3)
Q
Q
Q
V
V
= 320 V, I =9 A,
= 10 V
45
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
32
6
18.5
nC
nC
nC
g
DD
GS
D
gs
gd
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
Turn-off Delay Time
Fall Time
V
=200 V, I = 4.5 A
40
18
ns
ns
d(off)
DD
D
t
f
R = 4.7Ω V = 10 V
G GS
(Resistive Load see, Figure 3)
t
V
R
= 320 V, I = 9 A,
Off-voltage Rise Time
Fall Time
Cross-over Time
15
17
30
ns
ns
ns
r(Voff)
DD
D
t
f
= 4.7Ω, V = 10 V
G
GS
t
c
(Inductive Load see, Figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
9
36
A
A
Source-drain Current
Source-drain Current (pulsed)
SD
(2)
I
SDM
V
(1)
Forward On Voltage
I
I
= 9 A, V = 0
1.6
V
SD
SD
SD
GS
t
= 9 A, di/dt = 100 A/µs
=45 V, T = 150°C
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
225
1.6
14
ns
µC
A
rr
Q
V
DD
rr
RRM
j
I
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
V
is defined as a constant equivalent capacitance giving the same charging time as C
when V increases from 0 to 80%
oss DS
oss eq.
.
DSS
3/12
STP11NK40Z - STP11NK40ZFP - STB11NK40Z
Safe Operating Area For TO-220/D2PAK
Thermal Impedance For TO-220/D2PAK
Safe Operating Area For TO-220FP
Thermal Impedance For TO-220FP
Output Characteristics
Transfer Characteristics
4/12
STP11NK40Z - STP11NK40ZFP - STB11NK40Z
Static Drain-source On Resistance
Transconductance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
5/12
STP11NK40Z - STP11NK40ZFP - STB11NK40Z
Source-drain Diode Forward Characteristics
Normalized BVDSS vs Temperature
Maximum Avalanche Energy vs Temperature
6/12
STP11NK40Z - STP11NK40ZFP - STB11NK40Z
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
7/12
STP11NK40Z - STP11NK40ZFP - STB11NK40Z
TO-220 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.40
1.23
2.40
TYP.
MAX.
4.60
1.32
2.72
MIN.
0.173
0.048
0.094
MAX.
0.181
0.051
0.107
A
C
D
D1
E
1.27
0.050
0.49
0.61
1.14
1.14
4.95
2.4
0.70
0.88
1.70
1.70
5.15
2.7
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.027
0.034
0.067
0.067
0.203
0.106
0.409
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
10.0
10.40
16.4
0.645
13.0
2.65
15.25
6.2
14.0
2.95
15.75
6.6
0.511
0.104
0.600
0.244
0.137
0.147
0.551
0.116
0.620
0.260
0.154
0.151
3.5
3.93
3.85
3.75
L2
Dia.
L5
L9
L7
L6
L4
P011C
8/12
STP11NK40Z - STP11NK40ZFP - STB11NK40Z
TO-220FP MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.4
MAX.
4.6
2.7
2.75
0.7
1
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
2.5
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.5
1.5
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L5
L6
L7
Ø
16
0.630
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
1.126
.0385
0.114
0.626
0.354
0.118
1.204
0.417
0.141
0.645
0.366
0.126
16.4
9.3
3
3.2
L3
L6
L7
1 2 3
L4
L5
L2
9/12
STP11NK40Z - STP11NK40ZFP - STB11NK40Z
D2PAK MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.4
MAX.
4.6
MIN.
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
MAX.
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
A
A1
A2
B
2.49
0.03
0.7
2.69
0.23
0.93
1.7
B2
C
1.14
0.45
1.23
8.95
0.6
C2
D
1.36
9.35
D1
E
8
0.315
0.334
10
10.4
0.393
E1
G
8.5
4.88
15
5.28
15.85
1.4
0.192
0.590
0.050
0.055
0.094
0.208
0.625
0.055
0.068
0.126
L
L2
L3
M
1.27
1.4
1.75
3.2
2.4
R
0.4
0.015
V2
0º
8º
3
10/12
1
STP11NK40Z - STP11NK40ZFP - STB11NK40Z
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
0.059
12.8
20.2
24.4
100
13.2 0.504 0.520
0795
26.4 0.960 1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
TAPE MECHANICAL DATA
1000
mm
inch
DIM.
MIN. MAX. MIN. MAX.
10.5 10.7 0.413 0.421
15.7 15.9 0.618 0.626
A0
B0
D
1.5
1.6 0.059 0.063
D1
E
1.59 1.61 0.062 0.063
1.65 1.85 0.065 0.073
F
11.4
4.8
3.9
11.9
1.9
50
11.6 0.449 0.456
5.0 0.189 0.197
4.1 0.153 0.161
12.1 0.468 0.476
2.1 0.075 0.082
1.574
K0
P0
P1
P2
R
T
0.25 0.35 0.0098 0.0137
23.7 24.3 0.933 0.956
W
* on sales
11/12
STP11NK40Z - STP11NK40ZFP - STB11NK40Z
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics
© 2003 STMicroelectronics - Printed in Italy - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
© http://www.st.com
12/12
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