STP140N10F4 [STMICROELECTRONICS]
120A, 100V, 0.0085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN;
| 型号： | STP140N10F4 |
| 厂家： | 
ST |
| 描述： | 120A, 100V, 0.0085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN |
| 文件： | 总13页 (文件大小：268K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STH140N10F4-2, STF140N10F4
STP140N10F4
N-channel 100 V, 6.5 mΩ, 120 A TO-220, H2PAK, TO-220FP
STripFET™ DeepGATE™ Power MOSFET
Preliminary data
Features
Type
VDSS
RDS(on) max
ID
STH140N10F4-2
STF140N10F4
STP140N10F4
100 V
100 V
100 V
< 8.1 mΩ
< 8.5 mΩ
< 8.5 mΩ
120 A
50 A
3
3
2
2
1
120 A
1
TO-220
2
TO-220FP
■ N-channel enhancement mode
■ 100% avalanched rated
■ Low gate charge
3
3
1
■ Very low on-resistance
H²PAK
Application
Fure 1.
Internal schematic diagram
■ Switching applications
Description
This STripFET™ DeepGATE™ Power MOSFET
technology is among the latest improvements,
which have been especially tored to minimize
on-state resistance, with a ew gate structure,
providing superior sitching performances.
Table 1.
Device summary
Order codes
Marking
Package
H²PAK
Packaging
STH140N10F4-2
STF140N10F4
STP140N10F4
140N10F4
140N10F4
140N10F4
Tape and reel
Tube
TO-220FP
TO-220
Tube
May 2009
Doc ID 15289 Rev 2
1/13
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
www.st.com
13
Contents
STH140N10F4-2, STF140N10F4, STP140N10F4
Contents
1
2
3
4
5
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13
Doc ID 15289 Rev 2
STH140N10F4-2, STF140N10F4, STP140N10F4
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Value
TO-220, H²PAK
Parameter
Unit
TO-220FP
VDS
VGS
ID
Drain-source voltage (VGS = 0)
Gate- source voltage
100
20
V
V
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
120
84
50
35
A
A
ID
(1)
IDM
480
300
2
200
48
A
PTOT
Total dissipation at TC = 25 °C
Derating factor
W
0.32
W/°C
J
(2)
EAS
Single pulse avalanche energy
Storage temperature
1
Tstg
Tj
– 55 to 175
°C
Max. operating junction temperature
1. Pulse width limited by safe operating area
2. Starting Tj = 25 °C, ID= 45 A, VDD= 60 V
Table 3.
Symbol
Thermal data
Parameter
Value
Unit
TO-220, H²PAK
TO-220FP
Rthj-caThermal resistance junction-case max
Rhj-pcb Thermal resistance junction-pcb max
Rthj-a Thermal resistance junction-ambient max
0.5
35(1)
3.1
°C/W
62.5
62.5
300
°C/W
°C
Maximum lead temperature for soldering
Tl
300
purpose
1. When mounted on FR-4 board of 1 inch², 2 oz Cu
Doc ID 15289 Rev 2
3/13
Electrical characteristics
STH140N10F4-2, STF140N10F4, STP140N10F4
2
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 4.
Symbol
On/off states
Parameter
Test conditions
Min.
Typ.
Max. Unit
Drain-source
V(BR)DSS
ID = 250 µA, VGS = 0
100
V
Breakdown voltage
V
DS = max rating
1
µA
µA
Zero gate voltage
IDSS
Drain current (VGS = 0)
VDS = max rating,TC=125 °C
100
Gate-body leakage
current (VDS = 0)
IGSS
VGS
=
20 V
100
4
nA
V
VGS(th) Gate threshold voltage
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 60 A(1)
VGS = 10 V, ID = 25 A(2)
VGS = 10 V, ID = 60 A()
2
6.8
6.5
8.5
8.1
mΩ
mΩ
Static drain-source on
resistance
RDS(on)
1. For TO-220
2. For TO-220FP
3. For H²PAK
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min.
Typ. Max. Unit
Ciss
Input capacitance
Outpuapacitance
8980
750
pF
pF
VDS = 25 V, f = 1 MHz,
VGS = 0
Coss
-
-
Reverse transfer
capacitance
Crss
300
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
140
TBD
TBD
nC
nC
nC
VDD = 50 V, ID = 120 A,
VGS = 10 V
-
-
(see Figure 3)
Table 6.
Symbol
Switching times
Parameter
Test conditions
Min.
Typ.
Max. Unit
VDD = 50 V, ID = 60 A
td(on)
tr
Turn-on delay time
Rise time
TBD
TBD
ns
R
G = 4.7 Ω VGS = 10 V
(see Figure 2)
DD = 50 V, ID = 60 A,
-
-
ns
V
td(off)
tf
Turn-off-delay time
Fall time
TBD
TBD
ns
RG = 4.7 Ω, VGS = 10 V
(see Figure 2)
-
-
ns
4/13
Doc ID 15289 Rev 2
STH140N10F4-2, STF140N10F4, STP140N10F4
Electrical characteristics
Min. Typ. Max. Unit
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
TO-220,
H²PAK
-
-
-
120
50
A
A
A
ISD
Source-drain current
TO-220FP
TO-220,
H²PAK
480
Source-drain current
(pulsed)
(1)
ISDM
TO-220FP
-
-
200
A
V
(2)
VSD
Forward on voltage
ISD = 120 A, VGS = 0
TBD
ISD = 120 A,
VDD = 25 V
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
TBD
TBD
TBD
ns
nC
A
Qrr
di/dt = 100 A/µs,
Tj = 150 °C
-
IRRM
(see Figure 4)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Doc ID 15289 Rev 2
5/13
Test circuit
STH140N10F4-2, STF140N10F4, STP140N10F4
3
Test circuit
Figure 2.
Figure 4.
Figure 6.
Switching times test circuit for
resistive load
Figure 3.
Figure 5.
Figure 7.
Gate charge test circuit
Test circuit for inductive load
switching and diode recovery times
Unclamped inductive load test
circuit
Unclamped inductive waveform
Switching time waveform
6/13
Doc ID 15289 Rev 2
STH140N10F4-2, STF140N10F4, STP140N10F4
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
Doc ID 15289 Rev 2
7/13
Package mechanical data
STH140N10F4-2, STF140N10F4, STP140N10F4
TO-220FP mechanical data
mm
Typ.
Dim.
Min.
Max.
A
B
4.4
2.5
4.6
2.7
2.75
0.7
1
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.70
1.5
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L5
L6
L7
Dia
16
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
16.4
9.3
3
3.2
L7
E
A
B
D
Dia
L5
L6
F2
F1
F
G
H
G1
L4
L2
L3
7012510_Rev_J
8/13
Doc ID 15289 Rev 2
STH140N10F4-2, STF140N10F4, STP140N10F4
Package mechanical data
TO-220 mechanical data
mm
Typ
inch
Dim
Min
Max
Min
Typ
Max
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
0.173
0.024
0.044
0.019
0.6
0.181
0.034
0.066
0.027
0.62
b1
c
D
D1
E
1.27
0.050
10
10.40
2.70
5.15
1.32
6.60
2.72
14
0.393
0.094
0.194
0.048
0.244
0.094
01
0.137
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
3.50
3.93
16.40
0.645
28.90
1.137
3.75
3.85
2.95
0.147
0.104
0.151
0.116
2.65
Doc ID 15289 Rev 2
9/13
Package mechanical data
STH140N10F4-2, STF140N10F4, STP140N10F4
Table 8.
Dim.
H²PAK 2 leads mechanical data
mm
Min.
Typ.
Max.
A
A1
C
4.30
0.03
1.17
4.98
0.50
0.78
10.00
7.171
15.30
1.27
4.93
7.45
1.5
4.80
0.20
1.37
5.18
0.90
0.85
10.40
7.971
15.80
1.40
5.23
7.85
1.7
e
E
F
H
H1
L
-
L1
L2
L3
L4
M
R
2.6
2.9
0.20
0°
0.60
8°
V
10/13
Doc ID 15289 Rev 2
STH140N10F4-2, STF140N10F4, STP140N10F4
Package mechanical data
Figure 8.
H²PAK 2 leads drawing
8159712_B
Figure 9.
H²PAK 2 recommended otprint
8159712_B
Doc ID 15289 Rev 2
11/13
Revision history
STH140N10F4-2, STF140N10F4, STP140N10F4
5
Revision history
Table 9.
Date
Document revision history
Revision
Changes
12-Jan-2008
11-May-2009
1
2
First release
– Inserted new package and relevant mechanical data: H²PAK
– Removed package and mechanical data for D²PAK
12/13
Doc ID 15289 Rev 2
STH140N10F4-2, STF140N10F4, STP140N10F4
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and servis described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services decribed herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a lse grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained ther
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR RRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PRERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST poducts with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warry granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2009 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
Doc ID 15289 Rev 2
13/13
相关型号：
STP140NF55
N-channel 55V - 0.0065ヘ - 80A - D2PAK - I2PAK - TO-220 STripFET⑩ II Power MOSFET
STMICROELECTR
STP140NF75
N-CHANNEL 75V - 0.0065 ohm -120A DPAK/IPAK/TO-220 STripFET⑩ II POWER MOSFET
STMICROELECTR
STP141NF55
N-channel 55V - 0.0065Ω - 80A - D2PAK - I2PAK - TO-220 STripFET™ II Power MOSFET
STMICROELECTR
STP14NF10
N-CHANNEL 100V - 0.115 ohm - 15A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STripFET⑩ II POWER MOSFET
STMICROELECTR
STP14NF10FP
N-CHANNEL 100V - 0.115 ohm - 15A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STripFET⑩ II POWER MOSFET
STMICROELECTR
STP14NF12
N-CHANNEL 120V - 0.16ohm - 14A TO-220/TO-220FP LOW GATE CHARGE STripFET⑩ POWER MOSFET
STMICROELECTR
STP14NF12FP
N-CHANNEL 120V - 0.16ohm - 14A TO-220/TO-220FP LOW GATE CHARGE STripFET⑩ POWER MOSFET
STMICROELECTR
STP14NF12_06
N-channel 120V - 0.16OHM - 14A - TO-220/TO-220FP Low gate charge STripFET TM II Power MOSFET
STMICROELECTR
STP14NK50Z
N-CHANNEL 500V-0.34ohm-14ATO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH⑩Power MOSFET
STMICROELECTR
STP14NK50ZFP
N-CHANNEL 500V-0.34ohm-14ATO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH⑩Power MOSFET
STMICROELECTR
STP14NK50Z_06
N-channel 500V - 0.34OHM - 14A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-protected SuperMESH Power MOSFET
STMICROELECTR
©2020 ICPDF网 联系我们和版权申明