STP19NM50N [STMICROELECTRONICS]

N-channel 500 V, 0.2 ohm, 14 A MDmesh II Power MOSFET in TO-220FP, TO-220 and TO-247; N沟道500 V， 0.2欧姆， 14一个的MDmesh II功率MOSFET采用TO- 220FP ， TO- 220和TO- 247


型号：	STP19NM50N
厂家：	ST
描述：	N-channel 500 V, 0.2 ohm, 14 A MDmesh II Power MOSFET in TO-220FP, TO-220 and TO-247 N沟道500 V， 0.2欧姆， 14一个的MDmesh II功率MOSFET采用TO- 220FP ， TO- 220和TO- 247 晶体晶体管功率场效应晶体管开关脉冲局域网
文件：	总15页 (文件大小：715K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

STF19NM50N

STP19NM50N, STW19NM50N

N-channel 500 V, 0.2 Ω, 14 A MDmesh™ II Power MOSFET

in TO-220FP, TO-220 and TO-247

Features

V_{DSS @}

T_Jmax

R_DS(on)

max

Type

I_D

STF19NM50N

STP19NM50N

STW19NM50N

550 V

< 0.25 Ω

14 A

TO-247

TO-220

■ 100% avalanche tested

■ Low input capacitances and gate charge

■ Low gate input resistance

TO-220FP

Application

■ Switching applications

Figure 1.

Internal schematic diagram

Description

This second generation of MDmesh™ technology,

applies the benefits of the multiple drain process

to STMicroelectronics’ well-known PowerMESH™

horizontal layout structure. The resulting product

offers improved on-resistance, low gate charge,

high dv/dt capability and excellent avalanche

characteristics.

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Table 1.

Device summary

Order codes

Marking

Package

Packaging

STF19NM50N

STP19NM50N

STW19NM50N

TO-220FP

TO-220

19NM50N

Tube

TO-247

February 2010

Doc ID 17079 Rev 1

1/15

www.st.com

Contents

STF19NM50N, STP19NM50N, STW19NM50N

Contents

Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1

Electrical characteristics (curves)

. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Test circuits

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

2/15

Doc ID 17079 Rev 1

STF19NM50N, STP19NM50N, STW19NM50N

Electrical ratings

Table 2.

Symbol

Absolute maximum ratings

Value

Parameter

Unit

TO-220

TO-247 TO-220FP

V_DS

V_GS

I_D

Drain-source voltage (V_GS= 0)

Gate-source voltage

500

Drain current (continuous) at T_C= 25 °C

Drain current (continuous) at T_C= 100 °C

Drain current (pulsed)

14 ⁽¹⁾

9 ⁽¹⁾

56 ⁽¹⁾

I_D

(2)

I_DM

110

P_TOT

Total dissipation at T_C= 25 °C

V/ns

dv/dt ⁽³⁾Peak diode recovery voltage slope

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t = 1 s; TC = 25 °C)

V_ISO

2500

T_stg

T_j

Storage temperature

- 55 to 150

150

°C

Max. operating junction temperature

1. Limited only by maximum temperature allowed

2. Pulse width limited by safe operating area

3. I_SD≤ 14 A, di/dt

≤ 400 A/µs, V_Peak< V_(BR)DSS

Table 3.

Symbol

Thermal data

Parameter

Value

Unit

TO-220

TO-247 TO-220FP

R_thj-caseThermal resistance junction-case max

R_thj-ambThermal resistance junction-ambient max

1.14

4.17

62.5

°C/W

62.5

Maximum lead temperature for soldering

purpose

T_l

300

°C

Table 4.

Symbol

Avalanche characteristics

Parameter

Value

Unit

Avalanche current, repetitive or not-repetitive

(pulse width limited by T_jmax)

I_AR

Single pulse avalanche energy

E_AS

208

(starting T_j= 25°C, I_D= I_AR, V_DD= 50 V)

Doc ID 17079 Rev 1

3/15

Electrical characteristics

STF19NM50N, STP19NM50N, STW19NM50N

Electrical characteristics

(T = 25 °C unless otherwise specified)

Table 5.

Symbol

On /off states

Parameter

Test conditions

I_D= 1 mA, V_GS= 0

_DS= Max rating

Min.

Typ.

Max. Unit

Drain-source

breakdown voltage

V_(BR)DSS

500

Zero gate voltage

µA

I_DSS

drain current (V_GS= 0) V_DS= Max rating, T_C=125 °C

Gate-body leakage

I_GSS

V_GS

25 V

µA

current (V_DS= 0)

V_GS(th)

R_DS(on)

Gate threshold voltage V_DS= V_GS, I_D= 250 µA

Static drain-source on

V_GS= 10 V, I_D= 7 A

0.2

0.25

Ω

resistance

Table 6.

Symbol

Dynamic

Parameter

Test conditions

Min.

Typ.

Max. Unit

Input capacitance

C_iss

C_oss

C_rss

1000

V_DS= 50 V, f = 1 MHz,

V_GS= 0

Output capacitance

Reverse transfer

capacitance

Equivalent

capacitance time

(1)

C_o(tr)

104

V_DS= 0 to 400 V, V_GS= 0

f = 1 MHz open drain

Equivalent

capacitance energy

(2)

C_o(er)

Intrinsic gate

resistance

R_G

4.4

Ω

Q_g

Q_gs

Q_gd

Total gate charge

Gate-source charge

Gate-drain charge

V_DD= 400 V, I_D= 14 A,

V_GS= 10 V

(see Figure 19)

1. Time related is defined as a constant equivalent capacitance giving the same charging time as C_osswhen

V_DSincreases from 0 to 80% V_DSS

2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as C_oss

when V_DSincreases from 0 to 80% V_DSS

4/15

Doc ID 17079 Rev 1

STF19NM50N, STP19NM50N, STW19NM50N

Electrical characteristics

Min. Typ. Max Unit

Table 7.

Symbol

Switching times

Parameter

Test conditions

t_d(on)

t_r

t_d(off)

t_f

Turn-on delay time

Rise time

V_DD= 250 V, I_D= 7 A,

R_G= 4.7 Ω, V_GS= 10 V

(see Figure 20)

Turn-off-delay time

Fall time

Table 8.

Symbol

Source drain diode

Parameter

Test conditions

Min. Typ. Max. Unit

I_SD

Source-drain current

(1)

I_SDM

Source-drain current (pulsed)

(2)

V_SD

Forward on voltage

I_SD= 14 A, V_GS= 0

1.5

t_rr

Reverse recovery time

Reverse recovery charge

Reverse recovery current

296

3.5

I_SD= 14 A, di/dt = 100 A/µs

Q_rr

V_DD= 60 V (see Figure 23)

I_RRM

t_rr

Reverse recovery time

Reverse recovery charge

Reverse recovery current

I_SD= 14 A, di/dt = 100 A/µs

V_DD= 60 V, T_j= 150 °C

(see Figure 23)

346

Q_rr

I_RRM

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Doc ID 17079 Rev 1

5/15

Electrical characteristics

STF19NM50N, STP19NM50N, STW19NM50N

2.1

Electrical characteristics (curves)

Figure 2.

Safe operating area for TO-220

Figure 3.

Thermal impedance for TO-220

Thermal impedance for TO-220FP

Thermal impedance for TO-247

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Figure 6.

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Figure 7.

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6/15

Doc ID 17079 Rev 1

STF19NM50N, STP19NM50N, STW19NM50N

Electrical characteristics

Figure 8.

Output characteristics

Figure 9.

Transfer characteristics

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Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance

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Figure 13. Output capacitance stored energy

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Doc ID 17079 Rev 1

7/15

Electrical characteristics

STF19NM50N, STP19NM50N, STW19NM50N

Figure 14. Normalized gate threshold voltage Figure 15. Normalized on resistance vs

vs temperature temperature

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Figure 16. Source-drain diode forward

characteristics

Figure 17. Normalized B

vs temperature

VDSS

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8/15

Doc ID 17079 Rev 1

STF19NM50N, STP19NM50N, STW19NM50N

Test circuits

Figure 18. Switching times test circuit for

resistive load

Figure 19. Gate charge test circuit

VDD

12V

47kΩ

1kΩ

100nF

2200

3.3

µF

IG=CONST

V^DD

100Ω

Vⁱ=20V=VGMAX

D.U.T.

V^G

VGS

2200

µF

D.U.T.

2.7kΩ

47kΩ

1kΩ

AM01468v1

AM01469v1

Figure 20. Test circuit for inductive load

switching and diode recovery times

Figure 21. Unclamped inductive load test

circuit

FAST

DIODE

L=100µH

2200

µF

D.U.T.

3.3

µF

VDD

3.3

µF

1000

µF

V^DD

Ω

R^G

D.U.T.

AM01470v1

AM01471v1

Figure 22. Unclamped inductive waveform

Figure 23. Switching time waveform

ton

toff

tdoff

V(BR)DSS

tdon

90%

10%

90%

IDM

10%

VDS

VDD

90%

V^GS

10%

AM01472v1

AM01473v1

Doc ID 17079 Rev 1

9/15

Package mechanical data

STF19NM50N, STP19NM50N, STW19NM50N

Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK packages, depending on their level of environmental compliance. ECOPACK

specifications, grade definitions and product status are available at: www.st.com. ECOPACK

is an ST trademark.

10/15

Doc ID 17079 Rev 1

STF19NM50N, STP19NM50N, STW19NM50N

Package mechanical data

Table 9.

Dim.

TO-220FP mechanical data

Min.

Typ.

Max.

4.4

2.5

4.6

2.7

2.5

2.75

0.7

0.45

0.75

1.15

4.95

2.4

1.70

5.2

2.7

10.4

Dia

28.6

9.8

2.9

15.9

30.6

10.6

3.6

16.4

9.3

3.2

Figure 24. TO-220FP drawing

Dia

7012510_Rev_K

Doc ID 17079 Rev 1

11/15

Package mechanical data

STF19NM50N, STP19NM50N, STW19NM50N

TO-247 mechanical data

mm.

Typ.

Dim.

Min.

Max.

4.85

5.15

2.20

1.0

2.60

1.40

2.0

2.40

3.0

3.40

0.40

19.85

15.45

0.80

20.15

15.75

5.45

18.50

5.50

14.20

14.80

4.30

øP

øR

3.70

3.55

3.65

4.50

5.50

12/15

Doc ID 17079 Rev 1

STF19NM50N, STP19NM50N, STW19NM50N

Package mechanical data

TO-220 type A mechanical data

Dim

Min

Typ

Max

4.40

0.61

1.14

0.48

15.25

4.60

0.88

1.70

0.70

15.75

1.27

10.40

2.70

5.15

1.32

6.60

2.72

2.40

4.95

1.23

6.20

2.40

L20

L30

∅P

3.50

3.93

16.40

28.90

3.75

3.85

2.95

2.65

0015988_Rev_S

Doc ID 17079 Rev 1

13/15

Revision history

STF19NM50N, STP19NM50N, STW19NM50N

Revision history

Table 10. Document revision history

Date

Revision

Changes

09-Feb-2010

First release

14/15

Doc ID 17079 Rev 1

STF19NM50N, STP19NM50N, STW19NM50N

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Doc ID 17079 Rev 1

15/15

STP19NM50N [STMICROELECTRONICS]

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