STP20NF06 [STMICROELECTRONICS]
N-CHANNEL 60V - 0.06ohm - 20A TO-220/TO-220FP STripFET II POWER MOSFET; N沟道60V - 0.06ohm - 20A TO- 220 / TO- 220FP的STripFET II功率MOSFET
| 型号： | STP20NF06 |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 60V - 0.06ohm - 20A TO-220/TO-220FP STripFET II POWER MOSFET |
| 文件： | 总10页 (文件大小：279K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STP20NF06
STF20NF06
N-CHANNEL 60V - 0.06 Ω - 20A TO-220/TO-220FP
STripFET™ II POWER MOSFET
Table 1: General Features
Figure 1:Package
V
R
I
D
TYPE
DSS
DS(on)
STP20NF06
STF20NF06
60 V
60 V
< 0.07 Ω
< 0.07 Ω
20 A
20 A(*)
■
■
■
■
■
■
TYPICAL RDS(on) = 0.06 Ω
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
175oC OPERATING TEMPERATURE
HIGH dv/dt CAPABILITY
3
3
2
2
1
1
APPLICATION ORIENTED
CHARACTERIZATION
TO-220
TO-220FP
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
Figure 2: Internal Schematic Diagram
less critical alignment steps therefore
a
remarkable manufacturing reproducibility
APPLICATIONS
■
DC MOTOR CONTROL
■
DC-DC & DC-AC CONVERTERS
Table 2: Order Codes
Part Number
STP20NF06
MARKING
P20NF06
F20NF06
PACKAGE
TO-220
TO-220FP
PACKAGING
TUBE
STF20NF06
TUBE
Table 3: ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP20NF06
STF20NF06
V
Drain-source Voltage (V = 0)
60
60
V
V
DS
GS
V
DGR
Drain-gate Voltage (R = 20 kΩ)
GS
V
Gate- source Voltage
± 20
V
GS
I
I
Drain Current (continuous) at T = 25°C
20
14
80
60
0.4
20(*)
14(*)
80(*)
28
A
A
A
W
W/°C
V/ns
mJ
D
C
Drain Current (continuous) at T = 100°C
D
C
I
(•)
Drain Current (pulsed)
DM
P
Total Dissipation at T = 25°C
tot
C
Derating Factor
0.18
(1)
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
9
120
dv/dt
(2)
E
AS
T
stg
-55 to 175
°C
T
Operating Junction Temperature
j
(•) Pulse width limited by safe operating area.
(*)Refer to soa for the max allowable current value on FP-type due
to Rth value
(1) I ≤20A, di/dt ≤200A/µs, V ≤ V
, T ≤ T
(BR)DSS j JMAX
SD
DD
o
(2) Starting T = 25 C, I = 10A, V = 30V
j
D
DD
Rev. 1
December 2004
1/10
STP20NF06 STF20NF06
Table 4: THERMAL DATA
TO-220
TO-220FP
Rthj-case
Rthj-amb
Thermal Resistance Junction-case
Max
Max
2.5
5.35
°C/W
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
62.5
300
°C/W
°C
T
l
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
Table 5: OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
D
= 250 µA, V = 0
Drain-source
60
V
V
GS
(BR)DSS
Breakdown Voltage
Zero Gate Voltage
V
= Max Rating
DS
1
10
µA
µA
I
I
DSS
Drain Current (V = 0)
V
DS
= Max Rating T = 125°C
GS
C
Gate-body Leakage
V
GS
= ± 20V
±100
nA
GSS
Current (V = 0)
DS
Table 6: ON (5)
Symbol
Parameter
Test Conditions
Min.
Typ.
3
Max.
4
Unit
V
V
R
V
V
= V
I
= 250 µA
= 10 A
Gate Threshold Voltage
2
GS(th)
DS
GS
D
D
= 10 V
I
Static Drain-source On
Resistance
0.06
0.07
Ω
GS
DS(on)
Table 7: DYNAMIC
Symbol
Parameter
Test Conditions
= 15 V = 8 A
Min.
Typ.
Max.
Unit
(5)
V
DS
I
D
g
fs
Forward Transconductance
10
S
V
DS
= 25V f = 1 MHz V = 0
GS
C
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
400
100
40
pF
pF
pF
iss
C
oss
C
rss
2/10
STP20NF06 STF20NF06
ELECTRICAL CHARACTERISTICS (continued)
Table 8: SWITCHING ON
Symbol
Parameter
Test Conditions
= 30 V = 10 A
Min.
Typ.
Max.
Unit
V
R
I
D
t
Turn-on Delay Time
Rise Time
5
15
ns
ns
DD
d(on)
= 4.7 Ω
V
GS
= 10 V
t
G
r
(Resistive Load, Figure )
Q
V
DD
= 30 V I = 20 A V = 10 V
D GS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
14
3.0
5.5
18
nC
nC
nC
g
Q
gs
Q
gd
Table 9: SWITCHING OFF
Symbol
Parameter
Test Conditions
= 30 V = 10 A
Min.
Min.
Typ.
Max.
Unit
V
R
I
Turn-off Delay Time
Fall Time
15
5
ns
ns
t
DD
D
d(off)
= 4.7Ω,
V
GS
= 10 V
t
f
G
(Resistive Load, Figure 3)
Table 10: SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Typ.
Max.
Unit
I
Source-drain Current
Source-drain Current (pulsed)
20
80
A
A
SD
(1)
I
SDM
(2)
I
I
= 20 A
V
= 0
GS
V
Forward On Voltage
1.5
V
SD
SD
t
rr
= 20 A
= 20 V
di/dt = 100A/µs
T = 150°C
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
50
80
3.2
ns
µC
A
SD
Q
V
rr
RRM
DD
j
I
(see test circuit, Figure 5)
(1 )
(2)
Pulse width limited by safe operating area.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Figure 3: Safe Operating Area for TO-220
Figure 4: Safe Operating Area for TO-220FP
3/10
STP20NF06 STF20NF06
Figure 5: Thermal Impedance
Figure 6: Thermal Impedance for TO-220FP
Figure 7: Output Characteristics
Figure 8: Transfer Characteristics
Figure 9: Transconductance
Figure 10: Static Drain-source On Resistance
4/10
STP20NF06 STF20NF06
Figure 11: Gate Charge vs Gate-source Voltage
Figure 12: Capacitance Variations
Figure 13: Normalized Gate Threshold Voltage vs
Temperature
Figure 14: Normalized on Resistance vs Temperature
Figure 15: Source-drain Diode Forward
Characteristics
Figure 16: Normalized Breakdown Voltage
Temperature
5/10
STP20NF06 STF20NF06
Figure 18: Unclamped Inductive Waveform
Figure 17: Unclamped Inductive Load Test Circuit
Figure 19: Switching Times Test Circuits For Resis-
tive Load
Figure 20: Gate Charge test Circuit
Figure 21: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/10
STP20NF06 STF20NF06
TO-220 MECHANICAL DATA
mm.
inch.
TYP.
DIM.
MIN.
TYP.
MAX.
4.6
MIN.
0.173
0.048
0.094
0.019
0.024
0.044
0.044
0.194
0.094
0.393
TYP.
0.181
0.051
0.107
0.027
0.034
0.067
0.067
0.203
0.106
0.409
A
C
4.4
1.23
2.40
0.49
0.61
1.14
1.14
4.95
2.40
10
1.32
2.72
0.70
0.88
1.70
1.70
5.15
2.70
10.40
D
E
F
F1
F2
G
G1
H2
L2
L3
L4
L5
L6
L7
L9
DIA
16.40
28.90
0.645
1.137
13
14
0.511
0.104
0.600
0.244
0.137
0.147
0.551
0.116
0.620
0.260
0.154
0.151
2.65
15.25
6.20
3.50
3.75
2.95
15.75
6.60
3.93
3.85
7/10
STP20NF06 STF20NF06
TO-220FP MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
4.6
2.7
2.75
0.7
1
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
4.4
2.5
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.7
1.7
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L6
L7
Ø
16
0.630
28.6
9.8
15.9
9
30.6
10.6
16.4
9.3
1.126
0.385
0.626
0.354
0.118
1.204
0.417
0.645
0.366
0.126
3
3.2
L3
L6
L7
¯
1 2 3
L4
L2
8/10
STP20NF06 STF20NF06
Table 11:Revision History
Date
Revision
Description of Changes
07-Nov-2004
1.0
FIRST ISSUE
9/10
STP20NF06 STF20NF06
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
All other names are the property of their respective owners.
© 2004 STMicroelectronics - All Rights Reserved
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