STP55NE06L [STMICROELECTRONICS]
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET; N - 沟道增强型单一特征尺寸功率MOSFET
| 型号： | STP55NE06L |
| 厂家： | 
ST |
| 描述： | N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET |
| 文件： | 总6页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STP55NE06L
STP55NE06LFP
N - CHANNEL ENHANCEMENT MODE
” SINGLE FEATURE SIZE ” POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STP55NE06L
STP55NE06LFP
60 V
60 V
< 0.022 Ω
< 0.022 Ω
55 A
28 A
■
■
■
■
■
■
TYPICAL RDS(on) = 0.018 Ω
EXCEPTIONAL dV/dt CAPABILTY
100% AVALANCHE TESTED
LOW GATE CHARGE 100 oC
HIGH dV/dt CAPABILITY
APPLICATION ORIENTED
CHARACTERIZATION
3
3
2
2
1
1
TO-220
TO220FP
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique ”Single Feature Size”
process whereby a single body is implanted on a
strip layout structure. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
■
■
DC MOTOR CONTROL
DC-DC & DC-AC CONVERTERS
SYNCHRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP55NE06L
STP55NE06LFP
60
VDS
VDGR
VGS
ID
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
V
V
60
± 15
V
55
39
28
20
A
ID
A
I
DM(• )
220
130
0.86
220
35
A
Ptot
Total Dissipation at Tc = 25 oC
W
W/oC
Derating Factor
0.23
2000
VISO
Insulation Withstand Voltage (DC)
Peak Diode Recovery voltage slope
Storage Temperature
V
dV/dt
Tstg
Tj
7
V/ns
oC
oC
-65 to 175
175
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
(1) ISD ≤ 55 A,di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, T ≤ TJMAX
j
1/6
December 1997
STP55NE06LFP
THERMAL DATA
TO-220
TO-220FP
Rthj-case Thermal Resistance Junction-case
Max
1.15
4.28
oC/W
Rthj-amb Thermal Resistance Junction-ambient
Rthc-sink Thermal Resistance Case-sink
Max
Typ
62.5
0.5
300
oC/W
oC/W
oC
Tl
Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
55
A
(pulse width limited by Tj max, δ < 1%)
EAS
Single Pulse Avalanche Energy
250
mJ
(starting Tj = 25 oC, ID = IAR, VDD = 25 V)
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwisespecified)
OFF
Symbol
V(BR)DSS Drain-source
Breakdown Voltage
Zero Gate Voltage
Parameter
Test Conditions
ID = 250 µA VGS = 0
Min.
Typ.
Max.
Unit
60
V
IDSS
VDS = Max Rating
1
10
µA
µA
Drain Current (VGS = 0) VDS = Max Rating
Tc = 125
oC
IGSS
Gate-body Leakage
Current (VDS = 0)
± 100
nA
VGS = ± 15 V
ON ( )
Symbol
VGS(th)
RDS(on)
Parameter
Test Conditions
VDS = VGS ID = 250 µA
Min.
Typ.
Max.
Unit
V
Gate Threshold Voltage
1
1.7
2.5
Static Drain-source On VGS = 5 V ID = 27.5 A
Resistance VGS = 10 V ID = 27.5 A
0.022 0.028
0.019 0.022
Ω
ID(on)
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
55
A
DYNAMIC
Symbol
Parameter
Forward
Test Conditions
VDS > ID(on) x RDS(on)max ID =27.5 A
Min.
Typ.
Max.
Unit
gfs ( )
20
30
S
Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V f = 1 MHz VGS = 0
2800
375
100
3750
500
140
pF
pF
pF
2/6
STP55NE06LFP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Turn-on Time
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
VDD = 30 V
RG =4.7
ID = 27.5 A
VGS = 5 V
40
100
55
140
ns
ns
Rise Time
Ω
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 48 V ID = 55 A VGS = 5 V
40
13
20
55
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 48 V ID = 55 A
RG =4.7 Ω VGS = 5 V
25
40
65
35
55
90
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (• )
Source-drain Current
Source-drain Current
(pulsed)
55
220
A
A
VSD ( ) Forward On Voltage
ISD = 55 A VGS = 0
1.5
V
trr
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
65
180
5.5
ns
ISD = 55 A
VDD = 30 V
di/dt = 100 A/µs
Tj = 150 oC
Qrr
nC
A
IRRM
( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
3/6
STP55NE06LFP
TO-220 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.40
1.23
2.40
TYP.
MAX.
4.60
1.32
2.72
MIN.
0.173
0.048
0.094
MAX.
0.181
0.051
0.107
A
C
D
D1
E
1.27
0.050
0.49
0.61
1.14
1.14
4.95
2.4
0.70
0.88
1.70
1.70
5.15
2.7
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.027
0.034
0.067
0.067
0.203
0.106
0.409
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
10.0
10.40
16.4
0.645
13.0
2.65
15.25
6.2
14.0
2.95
15.75
6.6
0.511
0.104
0.600
0.244
0.137
0.147
0.551
0.116
0.620
0.260
0.154
0.151
3.5
3.93
3.85
3.75
L2
Dia.
L5
L9
L7
L6
L4
P011C
4/6
STP55NE06LFP
TO-220FP MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.4
TYP.
MAX.
4.6
2.7
2.75
0.7
1
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
2.5
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.7
1.7
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L6
L7
Ø
16
0.630
28.6
9.8
15.9
9
30.6
10.6
16.4
9.3
1.126
0.385
0.626
0.354
0.118
1.204
0.417
0.645
0.366
0.126
3
3.2
L3
L6
L7
¯
1 2 3
L4
L2
5/6
STP55NE06LFP
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise underany patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics productsare notauthorized for use as criticalcomponents in life supportdevices or systems withoutexpress
written approval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSON Microelectronics - Printedin Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta- Morocco - The Netherlands -
Singapore - Spain- Sweden- Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
6/6
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