STP5NA80FP [STMICROELECTRONICS]

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR; N - 沟道增强模式快速功率MOS晶体管


型号：	STP5NA80FP
厂家：	ST
描述：	N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR N - 沟道增强模式快速功率MOS晶体管晶体晶体管功率场效应晶体管开关脉冲局域网
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STP5NA80FP

N - CHANNEL ENHANCEMENT MODE

FAST POWER MOS TRANSISTOR

PRELIMINARY DATA

TYPE

V_DSS

R_DS(on)

< 2.4 Ω

I_D

STP5NA80FP

800 V

2.8 A

■

TYPICAL R_DS(on)= 1.8 Ω

± 30V GATE TO SOURCE VOLTAGE RATING

100% AVALANCHE TESTED

REPETITIVE AVALANCHE DATA AT 100^oC

LOW INTRINSIC CAPACITANCES

GATE CHARGE MINIMIZED

REDUCED THRESHOLD VOLTAGE SPREAD

DESCRIPTION

This series of POWER MOSFETS

represents the most advanced high voltage

technology. The optmized cell layout

coupled with a new proprietary edge

termination concur to give the device low

RDS(on) and gate charge, unequalled

ruggedness and superior switching

performance.

TO-220FP

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCHING

SWITCH MODE POWER SUPPLIES (SMPS)

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

ABSOLUTE MAXIMUM RATINGS

Symbol

V_DS

V_DGR

V_GS

I_D

Parameter

Value

800

Unit

Drain-source Voltage (V_GS= 0)

800

Drain- gate Voltage (R_GS= 20 kΩ)

Gate-source Voltage

± 30

2.8

Drain Current (continuous) at T_c= 25 ^oC

Drain Current (continuous) at T_c= 100 ^oC

Drain Current (pulsed)

I_D

1.8

_DM(• )

P_tot

Total Dissipation at T_c= 25 ^oC

W/^oC

^oC

Derating Factor

0.32

2000

-65 to 150

150

V_ISO

T_stg

T_j

Insulation Withstand Voltage (DC)

Storage Temperature

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

1/5

October 1997

STP5NA80FP

THERMAL DATA

R_thj-caseThermal Resistance Junction-case

R_thj-ambThermal Resistance Junction-ambient

R_thc-sinkThermal Resistance Case-sink

Max

Typ

3.12

62.5

0.5

^oC/W

oC/W

^oC/W

^oC

T_l

Maximum Lead Temperature For Soldering Purpose

300

AVALANCHE CHARACTERISTICS

Symbol

Parameter

Max Value

Unit

I_AR

Avalanche Current, Repetitive or Not-Repetitive

4.7

(pulse width limited by T_jmax, δ < 1%)

E_AS

Single Pulse Avalanche Energy

110

(starting T_j= 25 ^oC, I_D= I_AR, V_DD= 50 V)

ELECTRICAL CHARACTERISTICS (T_case= 25 ^oC unless otherwise specified)

OFF

Symbol

V_(BR)DSSDrain-source

Breakdown Voltage

Zero Gate Voltage

Drain Current (V_GS= 0) V_DS= Max Rating

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

800

I_D= 250 µA V_GS= 0

I_DSS

I_GSS

V_DS= Max Rating

250

µA

T_c= 100 ^oC

Gate-body Leakage

Current (V_DS= 0)

± 100

V_GS= ± 30 V

ON ( )

Symbol

V_GS(th)

R_DS(on)

Parameter

Test Conditions

V_DS= V_GSI_D= 250 µA

Min.

Typ.

Max.

3.75

2.4

Unit

Gate Threshold Voltage

2.25

Static Drain-source On V_GS= 10V I_D= 2.5 A

Resistance

1.8

Ω

I_D(on)

On State Drain Current V_DS> I_D(on)x R_DS(on)max

V_GS= 10 V

4.7

DYNAMIC

Symbol

Parameter

Forward

Test Conditions

Min.

Typ.

Max.

Unit

g_fs( )

V_DS> I_D(on)x R_DS(on)max

I_D= 2.5 A

2.7

5.2

Transconductance

C_iss

C_oss

C_rss

Input Capacitance

Output Capacitance

ReverseTransfer

Capacitance

V_DS= 25 V f = 1 MHz V_GS= 0

1250

140

1700

190

2/5

STP5NA80FP

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol

Parameter

Turn-on Time

Test Conditions

Min.

Typ.

Max.

Unit

t_d(on)

t_r

V_DD= 400 V I_D= 2.5 A

100

135

Rise Time

R_G= 47 Ω

V_GS= 10 V

Q_g

Q_gs

Q_gd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

V_DD= 480 V I_D= 3 A V_GS= 10 V

SWITCHING OFF

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

t_r(Voff)

t_f

t_c

Off-voltage Rise Time

Fall Time

Cross-over Time

V_DD= 640 V I_D= 5 A

R_G= 47 Ω V_GS= 10 V

(see test circuit, figure 5)

110

100

150

SOURCE DRAIN DIODE

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

I_SD

I_SDM(• )

Source-drain Current

(pulsed)

4.7

V_SD( ) Forward On Voltage

I_SD= 4.7 A V_GS= 0

1.6

t_rr

Reverse Recovery

Time

Reverse Recovery

Charge

Reverse Recovery

Current

800

15.2

I_SD= 5 A di/dt = 100 A/µs

V_DD= 100 V

(see circuit, figure 5)

T_j= 150 ^oC

Q_rr

µC

I_RRM

( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

(•) Pulse width limited by safe operating area

3/5

STP5NA80FP

TO-220FP MECHANICAL DATA

inch

TYP.

DIM.

MIN.

4.4

TYP.

MAX.

4.6

2.7

2.75

0.7

MIN.

0.173

0.098

0.017

0.030

0.045

0.195

0.094

0.393

MAX.

0.181

0.106

0.108

0.027

0.039

0.067

0.204

0.106

0.409

2.5

0.45

0.75

1.15

4.95

2.4

1.7

5.2

2.7

10.4

0.630

28.6

9.8

15.9

30.6

10.6

16.4

9.3

1.126

0.385

0.626

0.354

0.118

1.204

0.417

0.645

0.366

0.126

3.2

1 2 3

4/5

STP5NA80FP

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the

consequencesof use of such information nor for any infringementof patents or other rights of third parties which may results from its use. No

license is granted by implication or otherwise under anypatent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned

in this publication are subject to change without notice. This publicationsupersedes and replaces all information previously supplied.

SGS-THOMSON Microelectronicsproducts are notauthorized for useas critical components inlife support devices or systems without express

written approvalof SGS-THOMSON Microelectonics.

SGS-THOMSON Microelectronics GROUP OF COMPANIES

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5/5

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