STP5NB40FP [STMICROELECTRONICS]

N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET; N - 沟道增强型MOSFET的PowerMESH


型号：	STP5NB40FP
厂家：	ST
描述：	N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET N - 沟道增强型MOSFET的PowerMESH
文件：	总7页 (文件大小：73K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

STP5NB40

STP5NB40FP

N - CHANNEL ENHANCEMENT MODE

PowerMESH

MOSFET

PRELIMINARY DATA

TYPE

V_DSS

R_DS(on)

I_D

STP5NB40

STP5NB40FP

400 V

< 1.8 Ω

4.7 A

3.1 A

■

TYPICAL R_DS(on)= 1.47 Ω

100% AVALANCHE TESTED

VERY LOW INTRINSIC CAPACITANCES

GATE CHARGE MINIMIZED

EXTREMELY HIGH dv/dt CAPABILITY

DESCRIPTION

Using the latest high voltage MESH OVERLAY

process, SGS-Thomson has designed an

advanced family of Power MOSFETs with

outstanding performance. The new patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

TO-220

TO-220FP

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCHING

SWITCH MODE POWER SUPPLIES (SMPS)

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

STP5NB40FP

Unit

STP5NB40

V_DS

V_DGR

V_GS

I_D

Drain-source Voltage (V_GS= 0)

Drain- gate Voltage (R_GS= 20 kΩ)

Gate-source Voltage

400

± 30

Drain Current (continuous) at T_c= 25 ^oC

Drain Current (continuous) at T_c= 100 ^oC

Drain Current (pulsed)

4.7

3.1

I_D

_DM(• )

P_tot

Total Dissipation at T_c= 25 ^oC

Derating Factor

0.64

4.5

0.28

4.5

2000

W/^oC

V/ns

^oC

dv/dt(1) Peak Diode Recovery voltage slope

V_ISO

T_stg

T_j

Insulation Withstand Voltage (DC)

Storage Temperature

-65 to 150

150

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

(1) I_SD≤ 5A, di/dt ≤ 200 A/µs, V_DD≤ V_(BR)DSS, Tj ≤ T_JMAX

1/7

October 1997

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

STP5NB40/FP

THERMAL DATA

TO-220

TO220-FP

R_thj-caseThermal Resistance Junction-case

Max

1.56

3.57

^oC/W

R_thj-ambThermal Resistance Junction-ambient

R_thc-sinkThermal Resistance Case-sink

Max

Typ

62.5

0.5

300

^oC/W

^oC

T_l

Maximum Lead Temperature For Soldering Purpose

AVALANCHE CHARACTERISTICS

Symbol

Parameter

Max Value

Unit

I_AR

Avalanche Current, Repetitive or Not-Repetitive

4.7

(pulse width limited by T_jmax, δ < 1%)

E_AS

Single Pulse Avalanche Energy

200

(starting T_j= 25 ^oC, I_D= I_AR, V_DD= 50 V)

ELECTRICAL CHARACTERISTICS (T_case= 25 ^oC unless otherwise specified)

OFF

Symbol

V_(BR)DSSDrain-source

Breakdown Voltage

Zero Gate Voltage

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

400

I_D= 250 µA V_GS= 0 V

I_DSS

I_GSS

V_DS= Max Rating

µA

Drain Current (V_GS= 0) V_DS= Max Rating

T_c= 125 C

Gate-body Leakage

Current (V_DS= 0)

± 100

V_GS= ± 30 V

ON ( )

Symbol

Parameter

Test Conditions

V_DS= V_GSI_D= 250 µA

Min.

Typ.

Max.

Unit

V_GS(th)

Gate Threshold

Voltage

R_DS(on)

I_D(on)

Static Drain-source On V_GS= 10V I_D= 2.3 A

Resistance

1.47

1.8

Ω

On State Drain Current V_DS> I_D(on)x R_DS(on)max

V_GS= 10 V

4.7

DYNAMIC

Symbol

Parameter

Forward

Test Conditions

V_DS> I_D(on)x R_DS(on)maxI_D= 2.3 A

Min.

Typ.

Max.

Unit

g_fs( )

1.3

2.4

Transconductance

C_iss

C_oss

C_rss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

V_DS= 25 V f = 1 MHz V_GS= 0 V

405

526

2/7

STP5NB40/FP

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol

Parameter

Turn-on Time

Test Conditions

Min.

Typ.

Max.

Unit

t_d(on)

t_r

V_DD= 200 V I_D= 2.3 A

Rise Time

R_G= 4.7 Ω

V_GS= 10 V

(see test circuit, figure 3)

Q_g

Q_gs

Q_gd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

V_DD= 320 V I_D= 4.7 A V_GS= 10 V

14.5

5.1

SWITCHING OFF

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

t_r(Voff)

t_f

t_c

Off-voltage Rise Time

Fall Time

Cross-over Time

V_DD= 320 V I_D= 4.7 A

R_G= 4.7 Ω V_GS= 10 V

(see test circuit, figure 5)

SOURCE DRAIN DIODE

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

I_SD

I_SDM(• )

Source-drain Current

(pulsed)

4.7

V_SD( ) Forward On Voltage

I_SD=4.7 A V_GS= 0

1.6

t_rr

Reverse Recovery

Time

Reverse Recovery

Charge

300

1.6

I_SD=4.7 A di/dt = 100 A/µs

V_DD= 100 V

(see test circuit, figure 5)

T_j= 150 ^oC

Q_rr

µC

I_RRM

Reverse Recovery

Current

10.5

( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

(•) Pulse width limited by safe operating area

3/7

STP5NB40/FP

Fig. 1: Unclamped Inductive Load Test Circuit

Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuits For

Fig. 4: Gate Charge test Circuit

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times

4/7

STP5NB40/FP

TO-220 MECHANICAL DATA

inch

TYP.

DIM.

MIN.

4.40

1.23

2.40

TYP.

MAX.

4.60

1.32

2.72

MIN.

0.173

0.048

0.094

MAX.

0.181

0.051

0.107

1.27

0.050

0.49

0.61

1.14

4.95

2.4

0.70

0.88

1.70

5.15

2.7

0.019

0.024

0.044

0.194

0.094

0.393

0.027

0.034

0.067

0.203

0.106

0.409

DIA.

10.0

10.40

16.4

0.645

13.0

2.65

15.25

6.2

14.0

2.95

15.75

6.6

0.511

0.104

0.600

0.244

0.137

0.147

0.551

0.116

0.620

0.260

0.154

0.151

3.5

3.93

3.85

3.75

Dia.

P011C

5/7

STP5NB40/FP

TO-220FP MECHANICAL DATA

inch

TYP.

DIM.

MIN.

4.4

TYP.

MAX.

4.6

2.7

2.75

0.7

MIN.

0.173

0.098

0.017

0.030

0.045

0.195

0.094

0.393

MAX.

0.181

0.106

0.108

0.027

0.039

0.067

0.204

0.106

0.409

2.5

0.45

0.75

1.15

4.95

2.4

1.7

5.2

2.7

10.4

0.630

28.6

9.8

15.9

30.6

10.6

16.4

9.3

1.126

0.385

0.626

0.354

0.118

1.204

0.417

0.645

0.366

0.126

3.2

1 2 3

6/7

STP5NB40/FP

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the

consequencesof use of such information nor for any infringementof patents or other rights of third parties which may results from its use. No

license is granted by implication or otherwise under anypatent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned

in this publication are subject to change without notice. This publicationsupersedes and replaces all information previously supplied.

SGS-THOMSON Microelectronicsproducts are notauthorized for useas critical components inlife support devices or systems without express

written approvalof SGS-THOMSON Microelectonics.

SGS-THOMSON Microelectronics GROUP OF COMPANIES

Australia - Brazil - Canada- China- France - Germany - Hong Kong - Italy - Japan- Korea - Malaysia - Malta - Morocco - The Netherlands -

Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - UnitedKingdom - U.S.A

. . .

7/7

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