STP5NB60FP [STMICROELECTRONICS]
N - CHANNEL 600V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET; N - CHANNEL 600V - 1.8ohm - 5A - TO- 220 / TO- 220FP的PowerMESH MOSFET
| 型号： | STP5NB60FP |
| 厂家： | 
ST |
| 描述： | N - CHANNEL 600V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET |
| 文件： | 总9页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STP5NB60
STP5NB60FP
N - CHANNEL 600V - 1.8
Ω
- 5A - TO-220/TO-220FP
PowerMESH MOSFET
TYPE
VDSS
RDS(on)
ID
STP5NB60
STP5NB60FP
600 V
600 V
< 2.0 Ω
< 2.0
Ω
5 A
3 A
■
■
■
■
■
TYPICAL RDS(on) = 1.8
Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
3
3
2
2
DESCRIPTION
1
1
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
■
■
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES(SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
STP5NB60FP
Unit
STP5NB60
VDS
VDGR
VGS
ID
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 k
Gate-source Voltage
600
600
V
V
)
Ω
± 30
V
Drain Current (continuous) at Tc = 25 oC
5
3
1.9
20
A
o
ID
Drain Current (continuous) at Tc = 100 C
3.1
20
A
IDM(• )
Ptot
Drain Current (pulsed)
A
o
Total Dissipation at Tc = 25 C
100
0.8
4.5
35
W
Derating Factor
0.28
4.5
2000
W/oC
V/ns
V
oC
oC
dv/dt( ) Peak Diode Recovery voltage slope
1
VISO
Tstg
Tj
Insulation Withstand Voltage (DC)
Storage Temperature
-65 to 150
150
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
(1) ISD ≤ 5A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/9
September 1999
STP5NB60/FP
THERMAL DATA
TO-220
TO220-FP
Rthj-case Thermal Resistance Junction-case
Max
1.25
3.57
oC/W
Rthj-amb Thermal Resistance Junction-ambient
Rthc-sink Thermal Resistance Case-sink
Max
Typ
62.5
0.5
300
oC/W
oC/W
oC
Tl
Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Min.
Value
Max.
Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
5
A
EAS
Single Pulse Avalanche Energy
300
mJ
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
(Tcase = 25 oC unless otherwisespecified)
ELECTRICAL CHARACTERISTICS
OFF
Symbol
V(BR)DSS Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (VGS = 0) VDS = Max Rating
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
600
V
ID = 250
A VGS = 0
µ
IDSS
IGSS
VDS = Max Rating
1
50
µA
Tc = 125 oC
A
µ
Gate-body Leakage
Current (VDS = 0)
± 100
nA
VGS = ± 30 V
ON ( )
Symbol
Parameter
Test Conditions
VDS = VGS ID = 250 µA
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold
Voltage
3
4
5
V
RDS(on)
ID(on)
Static Drain-source On VGS = 10V ID = 2.5 A
Resistance
1.8
2.0
Ω
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
5.0
A
DYNAMIC
Symbol
Parameter
Forward
Test Conditions
VDS > ID(on) x RDS(on)max ID = 2.5 A
Min.
Typ.
Max.
Unit
gfs ( )
2.5
4.5
S
Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V f = 1 MHz VGS = 0
680
103
10.5
884
139
14
pF
pF
pF
2/9
STP5NB60/FP
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Turn-on Time
Test Conditions
VDD = 300 V ID = 2.5 A
RG = 4.7 Ω VGS = 10 V
Min.
Typ.
Max.
Unit
td(on)
tr
12
10
17
14
ns
ns
Rise Time
(see test circuit, figure 3)
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 480 V ID = 5 A VGS = 10 V
21
7.6
7.5
30
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 480 V ID = 5 A
RG = 4.7 Ω VGS = 10 V
(see test circuit, figure 5)
8
7
15
13
12
23
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (• )
Source-drain Current
Source-drain Current
(pulsed)
5
20
A
A
VSD ( ) Forward On Voltage
ISD = 5 A VGS = 0
1.6
V
trr
Reverse Recovery
Time
Reverse Recovery
610
3.6
ns
ISD = 5 A di/dt = 100 A/ s
VDD = 100 V
(see test circuit, figure 5)
µ
Tj = 150 oC
Qrr
C
µ
Charge
IRRM
Reverse Recovery
Current
11.7
A
( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
3/9
STP5NB60/FP
Thermal Impedance for TO-220
Thermal Impedance for TO-220FP
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
4/9
STP5NB60/FP
Gate Charge vs Gate-sourceVoltage
CapacitanceVariations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drainDiode Forward Characteristics
5/9
STP5NB60/FP
Fig. 1:
Fig. 2:
Unclamped Inductive Waveform
Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5:
Test Circuit For InductiveLoad Switching
And Diode Recovery Times
6/9
STP5NB60/FP
TO-220 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.40
1.23
2.40
TYP.
MAX.
4.60
1.32
2.72
MIN.
0.173
0.048
0.094
MAX.
0.181
0.051
0.107
A
C
D
D1
E
1.27
0.050
0.49
0.61
1.14
1.14
4.95
2.4
0.70
0.88
1.70
1.70
5.15
2.7
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.027
0.034
0.067
0.067
0.203
0.106
0.409
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
10.0
10.40
16.4
0.645
13.0
2.65
15.25
6.2
14.0
2.95
15.75
6.6
0.511
0.104
0.600
0.244
0.137
0.147
0.551
0.116
0.620
0.260
0.154
0.151
3.5
3.93
3.85
3.75
L2
Dia.
L5
L9
L7
L6
L4
P011C
7/9
STP5NB60/FP
TO-220FP MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.4
TYP.
MAX.
4.6
2.7
2.75
0.7
1
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
2.5
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.7
1.7
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L6
L7
Ø
16
0.630
28.6
9.8
15.9
9
30.6
10.6
16.4
9.3
1.126
0.385
0.626
0.354
0.118
1.204
0.417
0.645
0.366
0.126
3
3.2
L3
L6
L7
¯
1 2 3
L4
L2
8/9
STP5NB60/FP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parites which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specificationmentioned in this publication are
subject tochange without notice. This publication supersedes and replaces all informaiton previouslysupplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systemswithout express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
1999 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
http://www.st.com
.
9/9
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