STP60NE10FP [STMICROELECTRONICS]
N - CHANNEL 100V - 0.016W - 60A TO-220/TO-220FP STripFET] POWER MOSFET; N - CHANNEL 100V - 0.016W - 60A TO- 220 / TO- 220FP的STripFET ] POWER MOSFET
| 型号： | STP60NE10FP |
| 厂家： | 
ST |
| 描述： | N - CHANNEL 100V - 0.016W - 60A TO-220/TO-220FP STripFET] POWER MOSFET |
| 文件： | 总9页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STP60NE10
STP60NE10FP
N - CHANNEL 100V - 0.016Ω - 60A TO-220/TO-220FP
STripFET POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STP60NE10
STP60NE10FP
100 V
100 V
< 0.022 Ω
< 0.022 Ω
60 A
30 A
■
■
■
■
TYPICAL RDS(on) = 0.016 Ω
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATIONORIENTED
CHARACTERIZATION
3
3
2
2
DESCRIPTION
1
1
This Power MOSFET is the latest developmentof
STMicroelectronics unique ”Single Feature
Size ” strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturingreproducibility.
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
■
■
■
SOLENOID AND RELAY DRIVERS
MOTOR CONTROL, AUDIO AMPLIFIERS
DC-DC CONVERTERS
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
STP60NE10 STP60NE10FP
Unit
VDS
VDGR
VGS
ID
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
100
100
V
V
± 20
V
o
Drain Current (continuous) at Tc = 25 C
60
42
30
21
A
o
ID
Drain Current (continuous) at Tc = 100 C
A
IDM( ) Drain Current (pulsed)
240
160
1.06
120
50
A
•
o
Ptot
Total Dissipation at Tc = 25 C
Derating Factor
W
W/oC
0.37
2000
VISO
dv/dt
Tstg
Tj
Insulation Withstand Voltage (DC)
Peak Diode Recovery voltage slope
Storage Temperature
V
7
V/ns
oC
oC
-65 to 175
175
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
( ) ISD ≤ 60 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1
1/9
May 1999
STP60NE10/FP
THERMAL DATA
TO-220
TO-220FP
Rthj-case Thermal Resistance Junction-case
Max
0.94
2.7
oC/W
Rthj-amb Thermal Resistance Junction-ambient
Rthc-sink Thermal Resistance Case-sink
Max
Typ
62.5
0.5
300
oC/W
oC/W
oC
Tl
Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
60
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 C, ID = IAR, VDD = 35V)
100
mJ
o
(Tcase = 25 oC unless otherwisespecified)
ELECTRICAL CHARACTERISTICS
OFF
Symbol
V(BR)DSS Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (VGS = 0) VDS = Max Rating
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ID = 250
A
VGS = 0
100
V
µ
IDSS
IGSS
VDS = Max Rating
1
10
µA
µA
o
Tc = 125 C
Gate-body Leakage
Current (VDS = 0)
VGS
=
20 V
100
±
nA
±
ON ( )
Symbol
VGS(th)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
Gate Threshold Voltage VDS = VGS ID = 250
A
2
3
4
µ
RDS(on)
Static Drain-source On VGS = 10V ID = 30 A
Resistance
0.016 0.022
Ω
ID(on)
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
60
A
DYNAMIC
Symbol
Parameter
Forward
Test Conditions
VDS > ID(on) x RDS(on)max ID =18 A
Min.
Typ.
Max.
Unit
gfs ( )
30
S
Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V f = 1 MHz VGS = 0
5300
640
215
pF
pF
pF
2/9
STP60NE10/FP
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Min.
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 50 V
RG = 4.7
ID = 30 A
VGS = 10 V
28
100
ns
ns
Ω
(Resistive Load, see fig. 3)
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 80 V ID = 60 A VGS = 10 V
142
27
59
185
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 50 V
ID = 30 A
160
45
ns
ns
RG = 4.7 Ω
VGS = 10 V
(Resistive Load, see fig. 3)
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Vclamp = 80 V
RG = 4.7 Ω
ID = 60 A
VGS = 10 V
40
45
85
ns
ns
ns
(Inductive Load, see fig. 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Typ.
Max.
Unit
ISD
ISDM ( )
Source-drain Current
Source-drain Current
(pulsed)
60
240
A
A
•
VSD ( ) Forward On Voltage
ISD = 60 A VGS = 0
1.5
V
trr
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 60 A
VDD = 50 V
(see test circuit, fig. 5)
di/dt = 100 A/ s
170
1.02
12
ns
µ
Tj = 150 oC
Qrr
µC
IRRM
A
( ) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
µ
(•) Pulse width limited by safe operating area
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
3/9
STP60NE10/FP
Thermal Impedancefor TO-220
Thermal ImpedanceforTO-220FP
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
4/9
STP60NE10/FP
Gate Charge vs Gate-sourceVoltage
CapacitanceVariations
Normalized Gate ThresholdVoltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drainDiode Forward Characteristics
5/9
STP60NE10/FP
Fig. 1: Unclamped InductiveLoad Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/9
STP60NE10/FP
TO-220 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.40
1.23
2.40
TYP.
MAX.
4.60
1.32
2.72
MIN.
0.173
0.048
0.094
MAX.
0.181
0.051
0.107
A
C
D
D1
E
1.27
0.050
0.49
0.61
1.14
1.14
4.95
2.4
0.70
0.88
1.70
1.70
5.15
2.7
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.027
0.034
0.067
0.067
0.203
0.106
0.409
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
10.0
10.40
16.4
0.645
13.0
2.65
15.25
6.2
14.0
2.95
15.75
6.6
0.511
0.104
0.600
0.244
0.137
0.147
0.551
0.116
0.620
0.260
0.154
0.151
3.5
3.93
3.85
3.75
L2
Dia.
L5
L9
L7
L6
L4
P011C
7/9
STP60NE10/FP
TO-220FP MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.4
TYP.
MAX.
4.6
2.7
2.75
0.7
1
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
2.5
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.7
1.7
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L6
L7
Ø
16
0.630
28.6
9.8
15.9
9
30.6
10.6
16.4
9.3
1.126
0.385
0.626
0.354
0.118
1.204
0.417
0.645
0.366
0.126
3
3.2
L3
L6
L7
¯
1 2 3
L4
L2
8/9
STP60NE10/FP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parites which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specificationmentioned in this publication are
subject tochange without notice. This publication supersedes and replaces all informaiton previouslysupplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systemswithout express written approval of STMicroelectronics.
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1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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9/9
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