STP6NK50Z [STMICROELECTRONICS]
N-CHANNEL 500V - 0.93 ohm - 5.6A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH MOSFET; N沟道500V - 0.93欧姆 - 5.6A TO- 220 / TO- 220FP / DPAK齐纳保护的超网MOSFET
| 型号： | STP6NK50Z |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 500V - 0.93 ohm - 5.6A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH MOSFET |
| 文件： | 总12页 (文件大小：401K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STP6NK50Z - STF6NK50Z
STD6NK50Z
N-CHANNEL 500V - 0.93Ω - 5.6A TO-220/TO-220FP/DPAK
Zener-Protected SuperMESH™ MOSFET
TYPE
V
R
I
D
Pw
DSS
DS(on)
STP6NK50Z
STF6NK50Z
STD6NK50Z
500 V
500 V
500 V
< 1.2 Ω
< 1.2 Ω
< 1.2 Ω
5.6 A
5.6 A
5.6 A
90 W
25 W
90 W
■
■
■
■
■
■
TYPICAL R (on) = 0.93 Ω
DS
3
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING
REPEATIBILITY
2
1
TO-220
TO-220FP
3
1
DPAK
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
HIGH CURRENT, HIGH SPEED SWITCHING
IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
■
■
LIGHTING
ORDER CODES
PART NUMBER
MARKING
P6NK50Z
F6NK50Z
D6NK50Z
PACKAGE
PACKAGING
TUBE
STP6NK50Z
STF6NK50Z
TO-220
TO-220FP
DPAK
TUBE
STD6NK50ZT4
TAPE & REEL
April 2004
1/12
STP6NK50Z - STF6NK50Z - STD6NK50Z
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP6NK50Z
STD6NK50Z
STF6NK50Z
V
Drain-source Voltage (V = 0)
500
500
± 30
V
V
DS
GS
V
DGR
Drain-gate Voltage (R = 20 kΩ)
GS
V
Gate- source Voltage
V
GS
I
Drain Current (continuous) at T = 25°C
5.6
3.5
5.6 (*)
3.5 (*)
22.4 (*)
25
A
D
C
I
D
Drain Current (continuous) at T = 100°C
A
C
I
( )
Drain Current (pulsed)
22.4
90
A
DM
P
Total Dissipation at T = 25°C
W
TOT
C
Derating Factor
0.72
0.2
W/°C
V
V
Gate source ESD(HBM-C=100pF, R=1.5KΩ)
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
3000
4.5
ESD(G-S)
dv/dt (1)
V/ns
V
V
ISO
-
2500
T
T
stg
Operating Junction Temperature
Storage Temperature
j
-55 to 150
°C
( ) Pulse width limited by safe operating area
(1) I ≤ 5.6A, di/dt ≤ 200 A/µs, V ≤ V
, T ≤ T
j JMAX.
SD
DD
(BR)DSS
(*) Limited only by maximum temperature allowed
THERMAL DATA
TO-220
DPAK
TO-220FP
Rthj-case
Rthj-amb
Thermal Resistance Junction-case Max
1.38
5
°C/W
°C/W
°C
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
62.5
300
T
l
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
5.6
A
(pulse width limited by T max)
j
E
AS
Single Pulse Avalanche Energy
180
mJ
(starting T = 25 °C, I = I , V = 50 V)
j
D
AR
DD
GATE-SOURCE ZENER DIODE
Symbol
BV
Parameter
Test Conditions
Min.
30
Typ.
Max.
Unit
Gate-SourceBreakdown Igs=± 1mA (Open Drain)
Voltage
V
GSO
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/12
STP6NK50Z - STF6NK50Z - STD6NK50Z
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SPECIFIED)
CASE
ON/OFF
Symbol
Parameter
Drain-source
Test Conditions
Min.
Typ.
Max.
Unit
V
I
= 1 mA, V = 0
500
V
(BR)DSS
D
GS
Breakdown Voltage
I
Zero Gate Voltage
V
V
= Max Rating
= Max Rating, T = 125 °C
1
50
µA
µA
DSS
DS
DS
Drain Current (V = 0)
GS
C
I
Gate-body Leakage
V
= ± 20V
±10
µA
GSS
GS
Current (V = 0)
DS
V
V
V
= V , I = 50µA
Gate Threshold Voltage
3
3.75
0.93
4.5
1.2
V
GS(th)
DS
GS
GS
D
R
DS(on)
Static Drain-source On
Resistance
= 10V, I = 2.8 A
Ω
D
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
(1)
Forward Transconductance
V
V
= 8 V I = 2.8 A
4.3
S
fs
DS
, D
C
C
C
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
= 25V, f = 1 MHz, V = 0
690
100
20
pF
pF
pF
iss
DS
GS
oss
rss
C
(3) Equivalent Output
Capacitance
= 0V, V = 0V to 400V
52
pF
oss eq.
GS
DD
DS
t
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V
R
= 250 V, I = 2.8 A
12
23.5
31
ns
ns
ns
ns
d(on)
D
t
= 4.7Ω V = 10 V
GS
r
G
t
(Resistive Load see, Figure 3)
d(off)
23
t
f
Q
V
V
= 400V, I = 5.6 A,
= 10V
nC
nC
nC
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
24.6
4.9
13.3
g
DD
GS
D
Q
gs
Q
gd
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
5.6
22.4
A
A
Source-drain Current
Source-drain Current (pulsed)
SD
(2)
I
SDM
V
(1)
I
= 5.6 A, V = 0
Forward On Voltage
1.6
V
SD
SD
GS
t
Q
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
V
= 5.6 A, di/dt = 100 A/µs
SD
ns
µC
A
254
1.2
10
rr
= 48V, T = 25°C
rr
DD
j
I
(see test circuit, Figure 5)
RRM
t
Q
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
V
= 5.6 A, di/dt = 100 A/µs
SD
ns
µC
A
360
1.9
11
rr
= 48V, T = 150°C
rr
DD
j
I
(see test circuit, Figure 5)
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
V
is defined as a constant equivalent capacitance giving the same charging time as C
when V increases from 0 to 80%
oss DS
oss eq.
.
DSS
3/12
STP6NK50Z - STF6NK50Z - STD6NK50Z
Safe Operating Area for TO-220
Thermal Impedance for TO-220
Safe Operating Area for TO-220FP
Thermal Impedance for TO-220FP
Safe Operating Area for DPAK
Thermal Impedance for DPAK
4/12
STP6NK50Z - STF6NK50Z - STD6NK50Z
Transfer Characteristics
Output Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
5/12
STP6NK50Z - STF6NK50Z - STD6NK50Z
Normalized Gate Thereshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Normalized BVDSS vs Temperature
Source-drain Diode Forward Characteristics
Maximum Avalanche Energy vs Temperature
6/12
STP6NK50Z - STF6NK50Z - STD6NK50Z
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
7/12
STP6NK50Z - STF6NK50Z - STD6NK50Z
TO-220 MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.40
0.61
1.15
0.49
15.25
10
MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
MIN.
0.173
0.024
0.045
0.019
0.60
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
A
b
b1
c
D
E
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
øP
Q
3.50
3.93
16.40
28.90
0.645
1.137
3.75
2.65
3.85
2.95
0.147
0.104
0.151
0.116
8/12
STP6NK50Z - STF6NK50Z - STD6NK50Z
TO-220FP MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.4
MAX.
4.6
2.7
2.75
0.7
1
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
2.5
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.5
1.5
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L5
L6
L7
Ø
16
0.630
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
1.126
.0385
0.114
0.626
0.354
0.118
1.204
0.417
0.141
0.645
0.366
0.126
16.4
9.3
3
3.2
L3
L6
L7
1 2 3
L4
L5
L2
9/12
STP6NK50Z - STF6NK50Z - STD6NK50Z
TO-252 (DPAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.35
TYP.
MAX.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
6.60
4.60
10.10
MIN.
0.087
0.035
0.001
0.025
0.204
0.018
0.019
0.236
0.252
0.173
0.368
MAX.
0.094
0.043
0.009
0.035
0.213
0.024
0.024
0.244
0.260
0.181
0.398
A
A1
A2
B
B2
C
C2
D
E
G
H
L2
L4
V2
0.8
0.031
0.60
0o
1.00
8o
0.024
0o
0.039
0o
P032P_B
10/12
STP6NK50Z - STF6NK50Z - STD6NK50Z
DPAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
All dimensions
are in millimeters
All dimensions are in millimeters
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
16.4
50
0.059
13.2 0.504 0.520
0.795
18.4 0.645 0.724
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
TAPE MECHANICAL DATA
2500
mm
MIN. MAX. MIN. MAX.
6.8 0.267 0.275
10.4 10.6 0.409 0.417
12.1 0.476
inch
DIM.
A0
B0
B1
D
7
1.5
1.5
1.6 0.059 0.063
0.059
D1
E
1.65 1.85 0.065 0.073
7.4 7.6 0.291 0.299
2.55 2.75 0.100 0.108
F
K0
P0
P1
P2
R
3.9
7.9
1.9
40
4.1 0.153 0.161
8.1 0.311 0.319
2.1 0.075 0.082
1.574
W
15.7
16.3 0.618 0.641
* on sales type
11/12
STP6NK50Z - STF6NK50Z - STD6NK50Z
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
All other names are the property of their respective owners
© 2004 STMicroelectronics - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
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http://www.st.com
12/12
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