STP7NK80Z_10 [STMICROELECTRONICS]
N-channel 800 V, 1.5 Ω, 5.2 A, TO-220,TO-220FP,D2PAK,I2PAK Zener-protected SuperMESH? Power MOSFET; N沟道800 V ， 1.5 Ω ， 5.2 A， TO- 220 ， TO- 220FP ， D2PAK ， I2PAK齐纳保护超网？功率MOSFET
| 型号： | STP7NK80Z_10 |
| 厂家： | 
ST |
| 描述： | N-channel 800 V, 1.5 Ω, 5.2 A, TO-220,TO-220FP,D2PAK,I2PAK Zener-protected SuperMESH? Power MOSFET |
| 文件： | 总17页 (文件大小：940K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STB7NK80Z, STB7NK80Z-1
STP7NK80ZFP, STP7NK80Z
N-channel 800 V, 1.5 Ω, 5.2 A, TO-220,TO-220FP,D2PAK,I2PAK
Zener-protected SuperMESH™ Power MOSFET
Features
VDSS
(@Tjmax)
Type
RDS(on)
ID
STP7NK80Z
STP7NK80ZFP
STB7NK80Z
800V
800V
800V
800V
< 1.8Ω
< 1.8Ω
< 1.8Ω
< 1.8Ω
5.2A
5.2A
5.2A
5.2A
3
2
1
TO-220
TO-220FP
STB7NK80Z-1
■ Extremely high dv/dt capability
■ 100% avalanche tested
3
3
2
1
1
■ Gate charge minimized
I2PAK
D2PAK
■ Very low intrinsic capacitances
■ Very good manufacturing repeatability
Figure 1.
Internal schematic diagram
Applications
D(2)
■ Switching application
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage Power MOSFETs including revolutionary
MDmesh™ products.
G(1)
S(3)
AM01476v1
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STB7NK80ZT4
STB7NK80Z-1
STP7NK80Z
B7NK80Z
B7NK80Z
D²PAK
I²PAK
Tape e reel
P7NK80Z
TO-220
TO-220FP
Tube
STP7NK80ZFP
P7NK80ZFP
March 2010
Doc ID 8979 Rev 6
1/17
www.st.com
17
Contents
STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
6
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17
Doc ID 8979 Rev 6
STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Value
Parameter
Unit
D2PAK I2PAK
TO-220
TO-220FP
VDS
VGS
ID
Drain-source voltage (VGS = 0)
Gate- source voltage
800
V
V
30
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
5.2
3.3
20.8
125
1
5.2 (1)
3.3 (1)
20.8(1)
30
A
A
ID
(2)
IDM
A
PTOT
Total dissipation at TC = 25°C
Derating factor
W
0.24
W/°C
Gate source ESD
(HBM-C=100 pF, R=1.5 kΩ)
VESD(G-S)
4000
4.5
V
dv/dt (3) Peak diode recovery voltage slope
V/ns
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1 s; TC= 25 °C)
VISO
2500
V
Tj
Max operating junction temperature
Storage temperature
°C
°C
-55 to 150
Tstg
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤ 5.2 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
Table 3.
Symbol
Thermal data
Parameter
Value
Unit
D2PAK I2PAK
TO-220
TO-220FP
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
1
4.2
°C/W
°C/W
62.5
Maximum lead temperature for soldering
purpose
Tl
300
°C
Table 4.
Symbol
Avalanche characteristics
Parameter
Value
Unit
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
IAR
5.2
A
Single pulse avalanche energy
EAS
210
mJ
(starting TJ = 25 °C, ID = IAR, VDD = 50 V)
Doc ID 8979 Rev 6
3/17
Electrical characteristics
STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z
2
Electrical characteristics
(T
= 25 °C unless otherwise specified)
CASE
Table 5.
Symbol
On/off states
Parameter
Test conditions
ID =1 mA, VGS = 0
Min. Typ. Max. Unit
Drain-source
V(BR)DSS
800
V
Breakdown voltage
Zero gate voltage
V
DS = Max rating
1
µA
µA
IDSS
Drain Current (VGS = 0)
VDS = Max rating, TC = 125 °C
50
Gate-body leakage
Current (VDS = 0)
IGSS
VGS
=
20 V
10
3.75 4.5
1.5 1.8
µA
V
VGS(th) Gate threshold voltage
VDS = VGS, ID = 100 µA
VGS = 10 V, ID = 2.6 A
3
Static drain-source on
resistance
RDS(on)
Ω
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
(1)
gfs
Forward transconductance VDS = 15 V, ID = 2.6 A
Input capacitance
-
5
S
Ciss
Coss
Crss
1138
122
25
pF
pF
pF
VDS = 25 V, f = 1 MHz,
VGS = 0
Output capacitance
-
Reverse transfer
capacitance
Co(s2s)eq. Equivalent output
capacitance
V
DS =0 , VDS = 0 to 640 V
-
-
50
pF
td(on)
tr
tr(off)
tr
Turn-on delay time
Rise time
20
12
45
20
ns
ns
ns
ns
VDD = 400 V, ID = 2.6 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 17)
Turn-off delay time
Fall time
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 640 V, ID = 5.2 A,
VGS = 10 V
40
7
56
nC
nC
nC
-
-
(see Figure 18)
21
tr(Voff)
Off-voltage rise time
Fall time
VDD = 640 V, ID = 5.2 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 17)
12
10
20
ns
ns
ns
tr
tc
Cross-over time
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
.
4/17
Doc ID 8979 Rev 6
STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z
Electrical characteristics
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min.
Typ. Max. Unit
ISD
Source-drain current
5.2
A
A
-
-
(1)
ISDM
Source-drain current (pulsed)
20.8
(2)
VSD
Forward on voltage
ISD = 5.2 A, VGS = 0
1.6
V
ISD = 5.2 A, di/dt = 100
A/µs
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
530
3.31
12.5
ns
µC
A
Qrr
-
VDD = 50 V, Tj = 150°C
IRRM
(see Figure 22)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Pulse width limited by safe operating area
Table 8.
Symbol
Gate-source zener diode
Parameter
Test conditions
Min. Typ. Max. Unit
BVGSO Gate-source breakdown voltage IGS
=
1mA (open drain) 30
V
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Doc ID 8979 Rev 6
5/17
Electrical characteristics
STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220,
D PAK, I PAK
Figure 3.
Figure 5.
Figure 7.
Thermal impedance for TO-220,
D PAK, I PAK
2
2
2
2
Figure 4.
Safe operating area for TO-220FP
Thermal impedance for TO-220FP
Figure 6.
Output characteristics
Transfer characteristics
6/17
Doc ID 8979 Rev 6
STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z
Electrical characteristics
Figure 8.
Transconductance
Figure 9.
Static drain-source on resistance
Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations
Figure 12. Normalized gate threshold voltage Figure 13. Normalized on resistance vs
vs temperature temperature
Doc ID 8979 Rev 6
7/17
Electrical characteristics
STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z
Figure 15. Normalized BVDSS vs temperature
Figure 14. Source-drain diode forward
characteristic
Figure 16. Maximum avalanche energy vs
temperature
8/17
Doc ID 8979 Rev 6
STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z
Test circuits
3
Test circuits
Figure 17. Switching times test circuit for
resistive load
Figure 18. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
2200
3.3
µF
RL
µF
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
D.U.T.
VG
VD
RG
VGS
2200
µF
D.U.T.
2.7kΩ
47kΩ
PW
1kΩ
PW
AM01468v1
AM01469v1
Figure 19. Test circuit for inductive load
switching and diode recovery times
Figure 20. Unclamped inductive load test
circuit
L
A
A
A
B
D
FAST
DIODE
L=100µH
VD
G
2200
µF
D.U.T.
B
3.3
µF
VDD
S
3.3
µF
1000
µF
B
VDD
25
Ω
ID
D
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 21. Unclamped inductive waveform
Figure 22. Switching time waveform
ton
toff
tdoff
V(BR)DSS
tr
tf
tdon
VD
90%
10%
90%
IDM
10%
VDS
ID
0
0
VDD
VDD
90%
VGS
10%
AM01472v1
AM01473v1
Doc ID 8979 Rev 6
9/17
Package mechanical data
STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
10/17
Doc ID 8979 Rev 6
STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z
Package mechanical data
Table 9.
Dim.
TO-220FP mechanical data
Min.
mm
Typ.
Max.
A
B
4.4
2.5
4.6
2.7
D
2.5
2.75
0.7
E
0.45
0.75
1.15
1.15
4.95
2.4
F
1
F1
F2
G
1.70
1.70
5.2
G1
H
2.7
10
10.4
L2
L3
L4
L5
L6
L7
Dia
16
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
16.4
9.3
3
3.2
Figure 23. TO-220FP drawing
L7
E
A
B
D
Dia
L5
L6
F2
F1
F
G
H
G1
L4
L2
L3
7012510_Rev_K
Doc ID 8979 Rev 6
11/17
Package mechanical data
STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z
TO-220 type A mechanical data
mm
Dim
Min
Typ
Max
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
b1
c
D
D1
E
1.27
10
10.40
2.70
5.15
1.32
6.60
2.72
14
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
3.50
3.93
16.40
28.90
3.75
3.85
2.95
2.65
0015988_Rev_S
12/17
Doc ID 8979 Rev 6
STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z
Package mechanical data
I²PAK (TO-262) mechanical data
mm
Typ
inch
Dim
Min
Max
Min
Typ
Max
A
A1
b
4.40
2.40
0.61
1.14
0.49
1.23
8.95
2.40
4.95
10
4.60
2.72
0.88
1.70
0.70
1.32
9.35
2.70
5.15
10.40
14
0.173
0.094
0.024
0.044
0.019
0.048
0.352
0.094
0.194
0.393
0.511
0.137
0.050
0.181
0.107
0.034
0.066
0.027
0.052
0.368
0.106
0.202
0.410
0.551
0.154
0.055
b1
c
c2
D
e
e1
E
L
13
L1
L2
3.50
1.27
3.93
1.40
Doc ID 8979 Rev 6
13/17
Package mechanical data
STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z
D2PAK (TO-ꢀ63) mechanical data
mm
Typ
inch
Typ
Dim
Min
Max
Min
Max
0.181
A
A1
b
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
4.60
0.23
0.93
1.70
0.60
1.36
9.35
0.173
0.001
0.027
0.045
0.017
0.048
0.352
0.295
0.394
0.334
0.009
0.037
0.067
0.024
0.053
0.368
b2
c
c2
D
D1
E
10.40
0.409
E1
e
8.50
2.54
0.1
e1
H
4.88
15
5.28
15.85
2.69
2.79
1.40
1.75
0.192
0.590
0.099
0.090
0.05
0.208
0.624
0.106
0.110
0.055
0.069
J1
L
2.49
2.29
1.27
1.30
L1
L2
R
0.051
0.4
0.016
V2
0°
8°
0°
8°
0079457_M
14/17
Doc ID 8979 Rev 6
STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z
Packaging mechanical data
5
Packaging mechanical data
2
D PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
24.4
100
0.059
13.2 0.504 0.520
0795
26.4 0.960 1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
TAPE MECHANICAL DATA
1000
mm
inch
DIM.
MIN. MAX. MIN. MAX.
10.5 10.7 0.413 0.421
15.7 15.9 0.618 0.626
A0
B0
D
1.5
1.6 0.059 0.063
D1
E
1.59 1.61 0.062 0.063
1.65 1.85 0.065 0.073
F
11.4
4.8
3.9
11.9
1.9
50
11.6 0.449 0.456
5.0 0.189 0.197
4.1 0.153 0.161
12.1 0.468 0.476
2.1 0.075 0.082
1.574
K0
P0
P1
P2
R
T
0.25 0.35 0.0098 0.0137
23.7 24.3 0.933 0.956
W
Doc ID 8979 Rev 6
15/17
Revision history
STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z
6
Revision history
Table 10. Revision history
Date
Revision
Changes
09-Sep-2004
16-Aug-2006
09-Oct-2006
28-Mar-2010
3
4
5
6
Complete version
New template, no content change
Corrected order code
Corrected Table 1: Device summary
16/17
Doc ID 8979 Rev 6
STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2010 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
Doc ID 8979 Rev 6
17/17
相关型号：
STP7NM50N
N-channel 500V - 0.70ヘ - 5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh⑩ Power MOSFET
STMICROELECTR
STP7NM60N
N-channel 600 V, 5 A, 0.84 ohm, DPAK, TO-220FP, TO-220, IPAK second generation MDmesh Power MOSFET
STMICROELECTR
STP7NM80
N-channel 800 V, 0.95 Ω, 6.5 A TO-220, TO-220FP, IPAK, DPAK MDmesh™ Power MOSFET
STMICROELECTR
STP80N70F6
N-channel 68 V, 0.0052 Ohm, 96 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in TO-220 package
STMICROELECTR
©2020 ICPDF网 联系我们和版权申明