STP90N4F3 [STMICROELECTRONICS]

N-channel 40V - 5.4mヘ - 80A - DPAK - TO-220 - IPAK STripFET⑩ Power MOSFET; N沟道40V - 5.4米ヘ - 80A - DPAK - TO- 220 - IPAK STripFET⑩功率MOSFET
STP90N4F3
型号: STP90N4F3
厂家: ST    ST
描述:

N-channel 40V - 5.4mヘ - 80A - DPAK - TO-220 - IPAK STripFET⑩ Power MOSFET
N沟道40V - 5.4米ヘ - 80A - DPAK - TO- 220 - IPAK STripFET⑩功率MOSFET

文件: 总14页 (文件大小:343K)
中文:  中文翻译
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STD90N4F3  
STP90N4F3 - STU90N4F3  
N-channel 40V - 5.4m- 80A - DPAK - TO-220 - IPAK  
STripFET™ Power MOSFET  
Features  
Type  
VDSS  
RDS(on)  
ID  
Pw  
STD90N4F3  
STP90N4F3  
STU90N4F3  
40V  
40V  
40V  
<6.5mΩ  
<6.5mΩ  
<6.5mΩ  
80A 110W  
80A 110W  
80A 110W  
3
3
3
2
2
1
1
1
Standard threshold drive  
100% avalanche tested  
TO-220  
IPAK  
DPAK  
Applications  
Switching application  
Description  
Figure 1.  
Internal schematic diagram  
This n-channel enhancement mode Power  
MOSFET is the latest refinement of  
STMicroelectronics unique “single feature size“  
strip-based process with less critical alignment  
steps and therefore a remarkable manufacturing  
reproducibility. The resulting transistor shows  
extremely high packing density for low on-  
resistance, rugged avalanche characteristics and  
low gate charge.  
Table 1.  
Device summary  
Order code  
Marking  
90N4F3  
90N4F3  
90N4F3  
Package  
DPAK  
Packaging  
Tape & reel  
Tube  
STD90N4F3  
STP90N4F3  
STU90N4F3  
TO-220  
IPAK  
Tube  
November 2007  
Rev1  
1/14  
www.st.com  
14  
Contents  
STD90N4F3 - STP90N4F3 - STU90N4F3  
Contents  
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
2.1  
Electrical characteristics (curves)  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
3
4
5
6
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
2/14  
STD90N4F3 - STP90N4F3 - STU90N4F3  
Electrical ratings  
1
Electrical ratings  
Table 2.  
Absolute maximum ratings  
Symbol  
Parameter  
Drain-source voltage (VGS=0)  
Gate-source voltage  
Value  
Unit  
V
VDS  
VGS  
40  
20  
V
(1)  
Drain current (continuous) at TC = 25°C  
Drain current (continuous) at TC = 100°C  
80  
65  
A
ID  
ID  
A
(2)  
Drain current (pulsed)  
320  
A
IDM  
PTOT  
Total dissipation at TC = 25°C  
Derating factor  
110  
0.73  
8
W
W/°C  
V/ns  
dv/dt (3)  
Peak diode recovery voltage slope  
(4)  
Single pulse avalanche energy  
400  
mJ  
°C  
EAS  
Tj  
Operating junction temperature  
Storage temperature  
-55 to 175  
Tstg  
1. Current limited by package  
2. Pulse width limited by safe operating area  
3. ISD < 80 A, di/dt < 400A/µs, VDS < V(BR)DSS, Tj < Tjmax  
4. Starting Tj = 25°C, ID = 40A, VDD = 30V  
Table 3.  
Thermal resistance  
Parameter  
Value  
Symbol  
Unit  
TO-220 IPAK  
DPAK  
Rthj-case Thermal resistance junction-case max  
1.36  
°C/W  
°C/W  
°C/W  
Rthj-a  
Thermal resistance junction-ambient max  
Thermal resistance junction-ambient max  
Maximum lead temperature for soldering purpose  
62.5  
--  
100  
--  
--  
50  
--  
Rthj-pcb (1)  
Tl  
300  
275  
°C  
1. When mounted on 1inch² FR-4 2Oz Cu board  
3/14  
Electrical characteristics  
STD90N4F3 - STP90N4F3 - STU90N4F3  
2
Electrical characteristics  
(T  
=25°C unless otherwise specified)  
CASE  
Table 4.  
Static  
Symbol  
Parameter  
Test conditions  
ID = 250 µA, VGS= 0  
Min. Typ. Max. Unit  
Drain-source breakdown  
voltage  
V(BR)DSS  
40  
V
V
DS = Max rating,  
10  
µA  
µA  
Zero gate voltage drain  
current (VGS = 0)  
IDSS  
VDS = Max rating,Tc = 125°C  
100  
Gate body leakage current  
(VDS = 0)  
IGSS  
VGS = 20 V  
±200 nA  
VGS(th)  
RDS(on)  
VDS= VGS, ID = 250 µA  
VGS= 10 V, ID= 40 A  
Gate threshold voltage  
2
4
V
Static drain-source on  
resistance  
5.4  
6.5  
mΩ  
Table 5.  
Dynamic  
Symbol  
Parameter  
Test conditions  
Min Typ. Max. Unit  
(1)  
VDS =25 V, ID=40 A  
Forward transconductance  
100  
S
gfs  
Ciss  
Coss  
Crss  
Input capacitance  
2200  
580  
40  
pF  
pF  
pF  
VDS =25 V, f=1 MHz, VGS=0  
VDD=20 V, ID = 80 A  
Output capacitance  
Reverse transfer capacitance  
Qg  
Qgs  
Qgd  
Total gate charge  
Gate-source charge  
Gate-drain charge  
40  
11  
8
54  
nC  
nC  
nC  
VGS =10 V  
(see Figure 14)  
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%  
4/14  
STD90N4F3 - STP90N4F3 - STU90N4F3  
Electrical characteristics  
Table 6.  
Switching on/off (inductive load)  
Symbol  
Parameter  
Test conditions  
Min. Typ.  
Max. Unit  
VDD=20 V, ID= 40 A,  
RG=4.7 , VGS=10 V  
(see Figure 16)  
td(on)  
tr  
Turn-on delay time  
15  
50  
ns  
ns  
Rise time  
V
DD=20 V, ID= 40 A,  
td(off)  
tf  
Turn-off delay time  
Fall time  
40  
15  
ns  
ns  
RG=4.7 , VGS=10 V  
(see Figure 16)  
Table 7.  
Source drain diode  
Symbol  
Parameter  
Test conditions  
Min. Typ. Max. Unit  
ISD  
Source-drain current  
80  
A
A
(1)  
Source-drain current (pulsed)  
320  
ISDM  
(2)  
I
SD=80 A, VGS=0  
Forward on voltage  
1.5  
V
VSD  
ISD=80 A,  
trr  
Reverse recovery time  
Reverse recovery charge  
Reverse recovery current  
45  
60  
ns  
nC  
A
di/dt = 100 A/µs,  
Qrr  
VDD=30 V, Tj=150°C  
2.8  
IRRM  
(see Figure 15)  
1. Pulse width limited by safe operating area  
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%  
5/14  
Electrical characteristics  
STD90N4F3 - STP90N4F3 - STU90N4F3  
Thermal impedance  
2.1  
Electrical characteristics (curves)  
Figure 2.  
Safe operating area  
Figure 3.  
Figure 5.  
Figure 7.  
Figure 4.  
Figure 6.  
6/14  
Output characteristics  
Transfer characteristics  
Static drain-source on resistance  
Normalized BVDSS vs temperature  
STD90N4F3 - STP90N4F3 - STU90N4F3  
Electrical characteristics  
Figure 8.  
Gate charge vs gate-source voltage Figure 9.  
Capacitance variations  
Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs  
vs temperature  
temperature  
Figure 12. Source-drain diode forward  
characteristics  
7/14  
Test circuit  
STD90N4F3 - STP90N4F3 - STU90N4F3  
3
Test circuit  
Figure 13. Switching times test circuit for  
resistive load  
Figure 14. Gate charge test circuit  
Figure 15. Test circuit for inductive load  
switching and diode recovery times  
Figure 16. Unclamped Inductive load test  
circuit  
Figure 17. Unclamped inductive waveform  
Figure 18. Switching time waveform  
8/14  
STD90N4F3 - STP90N4F3 - STU90N4F3  
Package mechanical data  
4
Package mechanical data  
In order to meet environmental requirements, ST offers these devices in ECOPACK®  
packages. These packages have a Lead-free second level interconnect. The category of  
second level interconnect is marked on the package and on the inner box label, in  
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering  
conditions are also marked on the inner box label. ECOPACK is an ST trademark.  
ECOPACK specifications are available at: www.st.com  
9/14  
Package mechanical data  
STD90N4F3 - STP90N4F3 - STU90N4F3  
DPAK MECHANICAL DATA  
mm.  
TYP  
inch  
TYP.  
DIM.  
MIN.  
MAX.  
MIN.  
MAX.  
A
A1  
A2  
B
2.2  
0.9  
2.4  
1.1  
0.23  
0.9  
5.4  
0.6  
0.6  
6.2  
0.086  
0.035  
0.001  
0.025  
0.204  
0.017  
0.019  
0.236  
0.094  
0.043  
0.009  
0.035  
0.212  
0.023  
0.023  
0.244  
0.03  
0.64  
5.2  
b4  
C
0.45  
0.48  
6
C2  
D
D1  
E
5.1  
0.200  
6.4  
6.6  
0.252  
0.260  
E1  
e
4.7  
0.185  
0.090  
2.28  
e1  
H
4.4  
9.35  
1
4.6  
0.173  
0.368  
0.039  
0.181  
0.397  
10.1  
L
(L1)  
L2  
L4  
R
2.8  
0.8  
0.110  
0.031  
0.6  
0°  
1
0.023  
0°  
0.039  
8°  
0.2  
0.008  
V2  
8°  
0068772-F  
10/14  
STD90N4F3 - STP90N4F3 - STU90N4F3  
Package mechanical data  
TO-220 MECHANICAL DATA  
mm.  
inch  
DIM.  
MIN.  
TYP  
MAX.  
4.60  
0.88  
1.70  
0.70  
15.75  
10.40  
2.70  
5.15  
1.32  
6.60  
2.72  
14  
MIN.  
0.173  
0.024  
0.045  
0.019  
0.60  
TYP.  
MAX.  
0.181  
0.034  
0.066  
0.027  
0.620  
0.409  
0.106  
0.202  
0.052  
0.256  
0.107  
0.551  
0.154  
A
b
4.40  
0.61  
1.15  
0.49  
15.25  
10  
b1  
c
D
E
0.393  
0.094  
0.194  
0.048  
0.244  
0.094  
0.511  
0.137  
e
2.40  
4.95  
1.23  
6.20  
2.40  
13  
e1  
F
H1  
J1  
L
L1  
L20  
L30  
øP  
Q
3.50  
3.93  
16.40  
28.90  
0.645  
1.137  
3.75  
2.65  
3.85  
2.95  
0.147  
0.104  
0.151  
0.116  
11/14  
Packaging mechanical data  
STD90N4F3 - STP90N4F3 - STU90N4F3  
5
Packaging mechanical data  
DPAK FOOTPRINT  
All dimensions are in millimeters  
TAPE AND REEL SHIPMENT  
REEL MECHANICAL DATA  
mm  
MIN. MAX. MIN. MAX.  
330 12.992  
inch  
DIM.  
A
B
C
D
G
N
T
1.5  
12.8  
20.2  
16.4  
50  
0.059  
13.2 0.504 0.520  
0.795  
18.4 0.645 0.724  
1.968  
22.4  
0.881  
BASE QTY  
BULK QTY  
2500  
TAPE MECHANICAL DATA  
2500  
mm  
MIN. MAX. MIN. MAX.  
6.8 0.267 0.275  
10.4 10.6 0.409 0.417  
12.1 0.476  
inch  
DIM.  
A0  
B0  
B1  
D
7
1.5  
1.5  
1.6 0.059 0.063  
0.059  
D1  
E
1.65 1.85 0.065 0.073  
7.4 7.6 0.291 0.299  
2.55 2.75 0.100 0.108  
F
K0  
P0  
P1  
P2  
R
3.9  
7.9  
1.9  
40  
4.1 0.153 0.161  
8.1 0.311 0.319  
2.1 0.075 0.082  
1.574  
W
15.7  
16.3 0.618 0.641  
12/14  
STD90N4F3 - STP90N4F3 - STU90N4F3  
Revision history  
6
Revision history  
Table 8.  
Date  
29-Nov-2007  
Document revision history  
Revision  
Changes  
1
First release  
13/14  
STD90N4F3 - STP90N4F3 - STU90N4F3  
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14/14  

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