STPR2420CT [STMICROELECTRONICS]

ULTRA-FAST RECOVERY RECTIFIER DIODES; 超快恢复整流二极管
STPR2420CT
型号: STPR2420CT
厂家: ST    ST
描述:

ULTRA-FAST RECOVERY RECTIFIER DIODES
超快恢复整流二极管

整流二极管 快速恢复二极管
文件: 总5页 (文件大小:62K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
STPR2420CT  
ULTRA-FAST RECOVERY RECTIFIER DIODES  
MAIN PRODUCTS CHARACTERISTICS  
A1  
A2  
IF(AV)  
VRRM  
2 x 12 A  
200 V  
K
Tj (max)  
VF (max)  
trr (max)  
150°C  
0.99 V  
30 ns  
FEATURES  
SUITED FOR SMPS  
LOW LOSSES  
LOW FORWARD AND REVERSE RECOVERY  
TIME  
A2  
K
A1  
TO-220AB  
HIGH SURGE CURRENT CAPABILITY  
HIGH AVALANCHEENERGY CAPABILITY  
Low cost dual center tap rectifier suited for Switch  
Mode Power Supply and high frequencyDC to DC  
converters.  
Packagedin TO-220AB,this device is intended for  
use in low voltage, high frequency inverters, free  
wheeling and polarity protection applications.  
Symbol  
VRRM  
Parameter  
Repetitivepeak reverse voltage  
Value  
200  
30  
Unit  
V
RMS forward current  
IF(RMS)  
IF(AV)  
A
Average forward current  
Tc = 115°C  
Per diode  
12  
A
δ = 0.5  
Per device  
24  
Surge non repetitiveforward current  
Tp = 10 ms  
Sinusoidal  
IFSM  
120  
A
Storage temperaturerange  
Tstg  
Tj  
- 65 to + 150  
+ 150  
°C  
Maximum operating junction temperature  
July 1999 - Ed: 2B  
1/5  
STPR2420CT  
THERMAL RESISTANCES  
Symbol  
Parameter  
Value  
Unit  
Junction to case  
Per diode  
Total  
Rth(j-c)  
2.5  
1.4  
°C/W  
Coupling  
Rth(c)  
When the diodes 1 and 2 are used simultaneously:  
0.23  
Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode)+ P(diode 2) x Rth(c)  
STATIC ELECTRICAL CHARACTERISTICS  
Symbol  
Parameters  
Test conditions  
Min. Typ. Max.  
Unit  
µA  
mA  
V
Reverse leakage current  
Tj = 25°C  
Tj = 100°C  
Tj = 125°C  
Tj = 125°C  
Tj = 25°C  
VR = VRRM  
IR *  
50  
0.8  
Forward voltage drop  
IF = 12 A  
IF = 24 A  
IF = 24 A  
VF **  
0.99  
1.20  
1.25  
Pulse test : * tp = 5 ms, δ < 2 %  
** tp = 380 µs, δ < 2 %  
To evaluate the conductionlosses use the following equation:  
2
P = 0.78 x IF(AV) + 0.0175x IF (RMS)  
RECOVERY CHARACTERISTICS  
Symbol  
trr  
Test conditions  
Min. Typ. Max.  
Unit  
Tj = 25°C  
IF = 0.5A Irr = 0.25A IR = 1A  
IF = 1A tr = 10 ns VFR = 1.1 x VF  
IF = 1A tr = 10 ns  
30  
ns  
°
Tj = 25 C  
tfr  
20  
3
°
Tj = 25 C  
VFP  
V
2/5  
STPR2420CT  
Fig. 1:  
Fig. 2:  
Peakcurrentversus form factor (perdiode).  
Average forward power dissipation versus  
averageforward current (per diode).  
Fig. 3: Average current versus ambient  
temperature.  
Fig. 4: Non repetitive surge peak forward current  
versus overload duration (maximum values).  
Fig. 5:  
Relative variation of thermal transient  
Fig. 6:  
current.  
Forward voltage drop versus forward  
impedance junction to case versus pulse duration.  
3/5  
STPR2420CT  
Fig. 7:  
Fig. 8:  
Recoverycharge versus dIF/dt (per diode).  
Junction capacitance versus reverse  
voltage applied (typical values, per diode).  
Fig. 9: Peak reverse current versus dIF/dt (per  
diode).  
Fig. 10: Dynamic parameters versus junction  
temperature(per diode).  
4/5  
STPR2420CT  
PACKAGE MECHANICAL DATA  
TO-220AB  
DIMENSIONS  
Millimeters Inches  
REF.  
Min.  
Max.  
Min.  
Max.  
A
C
4.40  
1.23  
2.40  
0.49  
0.61  
1.14  
1.14  
4.95  
2.40  
10  
4.60  
1.32  
2.72  
0.70  
0.88  
1.70  
1.70  
5.15  
2.70  
10.40  
0.173  
0.048  
0.094  
0.019  
0.024  
0.044  
0.044  
0.194  
0.094  
0.393  
0.181  
0.051  
0.107  
0.027  
0.034  
0.066  
0.066  
0.202  
0.106  
0.409  
A
H2  
Dia  
D
C
E
L5  
L7  
F
F1  
F2  
G
L6  
L2  
F2  
D
G1  
H2  
L2  
L4  
L5  
L6  
L7  
L9  
M
F1  
L9  
L4  
16.4 typ.  
0.645 typ.  
F
13  
14  
0.511  
0.104  
0.600  
0.244  
0.137  
0.551  
0.116  
0.620  
0.259  
0.154  
M
G1  
E
2.65  
15.25  
6.20  
3.50  
2.95  
15.75  
6.60  
3.93  
G
2.6 typ.  
0.102 typ.  
Diam.  
3.75  
3.85  
0.147  
0.151  
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use of such information nor forany infringementof patents or otherrights of thirdparties which may result fromits use. No license is granted by  
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to  
change without notice. This publication supersedes and replaces all information previously supplied.  
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-  
proval of STMicroelectronics.  
The ST logo is a registered trademark of STMicroelectronics  
1999 STMicroelectronics - Printed inItaly - All rights reserved.  
STMicroelectronics GROUP OF COMPANIES  
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5/5  

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