STPS140Z [STMICROELECTRONICS]
POWER SCHOTTKY RECTIFIER; 功率肖特基整流器
| 型号： | STPS140Z |
| 厂家： | 
ST |
| 描述： | POWER SCHOTTKY RECTIFIER |
| 文件： | 总5页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STPS140Z
POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
IF
1 A
VRRM
40 V
VF (max)
Tj (max)
0.49 V
150°C
FEATURESAND BENEFITS
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLESWITCHING LOSSES
EXTREMELY FAST SWITCHING
SOD123
DESCRIPTION
Single Schottky rectifier suited for Switchmode
Power Supplies and highfrequency DC to DC con-
verters.
Packaged in SOD123, this device is intended for
use in low voltage, high frequency inverters, free
wheeling and polarity protection applications. Due
to the small size of the packagethis device fit GSM
and PCMCIA requirements.
ABSOLUTE RATINGS (limiting values)
Symbol
VRRM
IF
Parameter
Repetitivepeak reverse voltage
Value
40
Unit
V
Continuousforward current
Tamb = 60 °C
1
A
IFSM
Surge non repetitiveforward current
tp = 10 ms
Sinusoidal
5.5
A
IRRM
Repetitivepeak reverse current
tp = 2 µs square
0.5
A
F = 1kHz
IRSM
Tstg
Tj
Non repetitive peak reverse current
Storage temperaturerange
tp = 100µs square
1
- 65 to + 150
150
A
°C
Maximum operating junction temperature *
Maximum temperature for solderingduring 10s
Critical rate of rise of reverse voltage
TL
260
°C
dV/dt
10000
V/µs
dPtot
dTj
1
*
<
Thermal runaway condition for a diode on its own heatsink.
Rth(j−a)
May 1999 - Ed: 1
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STPS140Z
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth (j-a) Junction to ambient*
175
°C/W
2
* with 50 mm copper area (e=35µm)
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Tests Conditions
Tests Conditions
Min. Typ. Max.
Unit
µA
µA
mA
V
IR *
Reverse leakage current Tj = 25°C
VR = 5V
10
40
Tj = 25°C
VR = 40V
Tj = 100°C
1.5
5
VF **
Forward voltage drop
Tj = 25°C
IF = 1 A
0.55
Tj = 100°C
0.45 0.51
Pulse test : * tp = 5 ms, δ < 2 %
** tp = 380 µs, δ < 2%
To evaluate the maximum conductionlosses use thefollowing equation :
2
P = 0.2 x IF(AV) + 0.3 x IF (RMS) at Tj = 150°C
Fig. 1: Average forward power dissipation versus
averageforward current.
Fig. 2: Average forward current versus ambient
temperature ( =1).
δ
PF(av)(W)
IF(av)(A)
0.6
1.2
δ = 0.2
δ = 0.1
δ = 0.5
δ = 0.05
0.5
0.4
0.3
0.2
0.1
0.0
1.0
0.8
0.6
δ = 1
0.4
T
T
0.2
Tamb(°C)
IF(av) (A)
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
tp
=tp/T
δ
tp
=tp/T
δ
0.0
0
25
50
75
100
125
150
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STPS140Z
Fig. 3:
Fig. 4:
Relativevariationof thermal impedancejunction
to ambient versus pulse duration (epoxy printed circuit
boardFR4withrecommendedpad layout).
Non repetive surge peak forward current
versus overloadduration(maximum values).
Zth(j-a)/Rth(j-a)
IM(A)
1E+0
5
δ = 0.5
δ = 0.2
4
3
2
Ta=25°C
Ta=60°C
δ = 0.1
1E-1
T
IM
1
Single pulse
t
δ=0.5
t(s)
tp
tp(s)
1E+0
=tp/T
δ
0
1E-2
1E-2
1E-3
1E-2
1E-1
1E+0
1E-1
1E+1
5E+1
Fig. 5:
Fig. 6:
Reverse leakage current versus junction
temperature (typical value).
Reverse leakage current versus reverse
voltage applied (typical value).
IR[Tj] / IR[Tj=25°C]
IR(mA)
5E+3
5E+1
VR=40V
Tj=150°C
1E+1
1E+3
1E+2
1E+1
1E+0
Tj=100°C
1E+0
Tj=70°C
1E-1
1E-2
Tj=25°C
1E-3
VR(V)
Tj(°C)
75
1E-4
1E-1
0
5
10
15
20
25
30
35
40
0
25
50
100
125
150
Fig. 7: Junction capacitance versus reverse
voltage applied (typical value).
C(pF)
200
F=1MHz
Tj=25°C
100
50
20
VR(V)
10
1
2
5
10
20
50
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STPS140Z
Fig. 8-1:
Fig. 8-2:
Forward voltage drop versus forward
current (low level, maximum values).
Forward voltage drop versus forward
current (high level, maximum values).
IFM(A)
IFM(A)
5E+0
2.0
1.8
1.6
1.4
1.2
1E+0
Tj=150°C
Tj=25°C
1.0
Tj=25°C
0.8
0.6
1E-1
Tj=100°C
Tj=150°C
Tj=100°C
0.4
0.2
VFM(V)
VFM(V)
1E-2
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Fig. 9:
Thermal resistance junction to ambient
versus copper surface (epoxy printed circuit board
FR4, copper thickness:35 m).
µ
Rth(j-a) (°C/W)
300
280
260
240
220
200
180
160
140
IF=1A
120
100
S(Cu) (mm )
0
10 20 30 40 50 60 70 80 90 100
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STPS140Z
PACKAGE MECHANICAL DATA
SOD123 Plastic
DIMENSIONS
Millimeters Inches
Min. Max.
REF.
H
A2
Min.
Max.
A1
b
A
A1
A2
b
1.45
0.1
0.057
0.004
0.053
E
0
0
0.85
1.35
0.033
0.55 Typ.
0.15 Typ.
0.022 Typ.
0.039 Typ.
A
D
c
D
2.55
2.85
1.7
0.1
0.112
0.067
c
E
1.4
0.055
0.01
0.14
G
H
0.25
3.55
G
3.95
0.156
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor forany infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
1999 STMicroelectronics - Printed in Italy - All rights reserved.
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