STPS15H100CB-TR [STMICROELECTRONICS]

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER; 高压功率肖特基整流器


型号：	STPS15H100CB-TR
厂家：	ST
描述：	HIGH VOLTAGE POWER SCHOTTKY RECTIFIER 高压功率肖特基整流器整流二极管高压高电压电源
文件：	总4页 (文件大小：69K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

STPS15H100CB

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

MAIN PRODUCTS CHARACTERISTICS

I_F(AV)

V_RRM

2 x 7.5 A

100 V

Tj (max)

V_F(max)

175 °C

0.67 V

FEATURES AND BENEFITS

■

NEGLIGIBLE SWITCHING LOSSES

LOW LEAKAGE CURRENT

GOOD TRADE OFF BETWEEN LEAKAGE

CURRENT AND FORWARD VOLTAGE DROP

LOW THERMAL RESISTANCE

■

AVALANCHE CAPABILITY SPECIFIED

DPAK

DESCRIPTION

Dual center tab Schottky rectifier suited for Switch

Mode Power Supply and high frequency DC to DC

converters.

Package in DPAK, this device is intended for use

in high frequency inverters.

ABSOLUTE RATINGS (limiting values, per diode)

Symbol

Parameter

Repetitive peak reverse voltage

Value

Unit

V_RRM

100

I_F(RMS)

I_F(AV)

7.5

RMS forward current

Average forward current

Tc = 135°C

δ = 0.5

Per diode

Per device

I_FSM

I_RRM

P_ARM

T_stg

Surge non repetitive forward current

Peak repetitive reverse current

Repetitive peak avalanche power

Storage temperature range

tp = 10 ms sinusoidal

tp = 2 µs square F=1kHz

tp = 1µs Tj = 25°C

6600

- 65 to + 175

175

°C

V/µs

Maximum operating junction temperature *

Critical rate of rise reverse voltage

dV/dt

10000

dPtot

* :

thermal runaway condition for a diode on its own heatsink

dTj

Rth(j − a)

July 2003 - Ed : 2A

1/4

STPS15H100CB

THERMAL RESISTANCES

Symbol

Parameter

Value

Unit

R_th(j-c)

Per diode

Total

2.4

0.7

°C/W

Junction to case

Coupling

R_th(c)

When the diodes 1 and 2 are used simultaneously :

∆ Tj(diode 1) = P(diode1) x R_th(j-c)(Per diode) + P(diode 2) x R_th(c)

STATIC ELECTRICAL CHARACTERISTICS (per diode)

Symbol

Parameter

Tests Conditions

Min. Typ. Max.

Unit

I_R*

Reverse leakage current Tj = 25°C

Tj = 125°C

V_R= V_RRM

1.3

V_F*

0.8

Forward voltage drop

Tj = 25°C

Tj = 125°C

Tj = 25°C

Tj = 125°C

Tj = 25°C

Tj = 125°C

I_F= 7.5 A

I_F= 12 A

I_F= 15 A

0.62

0.68

0.71

0.67

0.85

0.73

0.89

0.76

Pulse test : * tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation :

P = 0.58 x I_F(AV)+ 0.012 I_{F (RMS)}

Fig. 1: Conduction losses versus average current.

Fig. 2: Average forward current versus ambient

temperature (δ = 0.5).

PF(av)(W)

IF(av)(A)

δ = 0.5

Rth(j-a)=Rth(j-c)

δ = 0.2

δ = 1

δ = 0.1

δ = 0.05

Rth(j-a)=70°C/W

Tamb(°C)

75 100

IF(av)(A)

=tp/T

125

150

175

Fig. 3: Normalized avalanche power derating

versus pulse duration.

Fig. 4: Normalized avalanche power derating

versus junction temperature.

(t )

(1µs)

ARM

(t )

(25°C)

ARM

1.2

0.1

0.8

0.6

0.4

0.2

0.01

T (°C)

t (µs)

0.001

100

125

150

0.01

0.1

100

1000

2/4

STPS15H100CB

Fig. 5: Non repetitive surge peak forward current

versus overload duration (maximum values).

Fig. 6: Relative variation of thermal impedance

junction to case versus pulse duration.

IM(A)

100

Zth(j-c)/Rth(j-c)

1.0

0.9

0.8

0.7

δ = 0.5

Tc=25°C

0.6

0.5

Tc=75°C

0.4

δ = 0.2

Tc=125°C

δ = 0.1

0.3

0.2

Single pulse

0.1

t(s)

tp(s)

1.E+00

δ=0.5

=tp/T

0.0

1.E-03

1.E-02

1.E-01

1.E+00

1.E-02

1.E-01

Fig. 7: Reverse leakage current versus reverse

voltage applied (typical values).

Fig. 8: Junction capacitance versus reverse voltage

applied (typical values).

IR(mA)

1.E+01

C(nF)

1.0

Tj=150°C

F=1MHz

Vosc=30mV

Tj=25°C

1.E+00

Tj=125°C

Tj=100°C

1.E-01

0.1

Tj=75°C

1.E-02

Tj=50°C

1.E-03

Tj=25°C

VR(V)

1.E-04

0.0

100

Fig. 10: Thermal resistance junction to ambient ver-

sus copper surface under tab (epoxy printed board

FR4, Cu = 35µm).

Fig. 9: Forward voltage drop versus forward current.

IFM(A)

100

Rth(j-a)(°C/W)

100

Tj=125°C

(Maximum values)

Tj=125°C

(Typical values)

Tj=25°C

(Maximum values)

S(cm²)

VFM(V)

0.8

0.0

0.2

0.4

0.6

1.0

1.2

1.4

1.6

3/4

STPS15H100CB

PACKAGE MECHANICAL DATA

DPAK

DIMENSIONS

Millimeters Inches

Min. Max

2.20 2.40

REF.

Min.

Max.

0.086

0.035

0.001

0.025

0.204

0.017

0.018

0.236

0.251

0.173

0.368

0.094

0.043

0.009

0.035

0.212

0.023

0.244

0.259

0.181

0.397

0.90

0.03

0.64

5.20

0.45

0.48

6.00

6.40

4.40

9.35

1.10

0.23

0.90

5.40

0.60

6.20

6.60

4.60

10.10

0.80 typ.

0.031 typ.

0.60

0°

1.00

8°

0.023

0°

0.039

8°

FOOTPRINT (dimensions in mm)

6.7

1.6

2.3 2.3

Ordering type

Marking

Package

Weight

Base qty

Delivery mode

STPS15H100CB

S15H100

DPAK

0.30 g

Tube

STPS15H100CB-TR

2500

Tape & reel

■

EPOXY MEETS UL94,V0

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of

use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by

implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to

change without notice. This publication supersedes and replaces all information previously supplied.

STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written

approval of STMicroelectronics.

The ST logo is a registered trademark of STMicroelectronics

STMicroelectronics GROUP OF COMPANIES

Australia - Brazil - Canada - China - Finland - France - Germany

Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore

Spain - Sweden - Switzerland - United Kingdom - United States.

http://www.st.com

4/4

相关型号：