STPS1L30AU_技术文档

STPS1L30A/U

®

LOW DROP POWER SCHOTTKY RECTIFIER

MAIN PRODUCT CHARACTERISTICS

I_F(AV)

V_RRM

1 A

30 V

Tj (max)

V_F(max)

150 °C

0.3 V

FEATURES AND BENEFITS

VERY LOW FORWARD VOLTAGE DROP FOR

LESS POWER DISSIPATION

OPTIMIZED CONDUCTION/REVERSE LOSSES

TRADE-OFF WHICH MEANS THE HIGHEST

YIELD IN THE APPLICATIONS

SMA

STPS1L30A

JEDEC DO-214AC

SMB

STPS1L30U

JEDEC DO-214AA

SURFACE MOUNT MINIATURE PACKAGE

DESCRIPTION

Single Schottky rectifier suited to Switched Mode

Power Supplies and high frequency DC to DC con-

verters, freewheel diode and integrated circuit

latch up protection.

Packaged in SMA and SMB, this device is espe-

cially intended for use in parallel with MOSFETs in

synchronous rectification.

ABSOLUTE RATINGS

Symbol

(limiting values)

Parameter

Value

Unit

V

V_RRM

Repetitive peak reverse voltage

30

I_F(RMS)RMS forward current

10

A

δ

I_F(AV)

I_FSM

I_RRM

I_RSM

T_stg

Average forward current

T_L= 135°C = 0.5

1

A

Surge non repetitive forward current

Repetitive peak reverse current

Non repetitive peak reverse current

Storage temperature range

tp = 10 ms Sinusoidal

75

A

µ

tp = 2 s F = 1kHz square

1

A

µ

tp = 100 s square

A

°

- 65 to + 150

150

C

Tj

Maximum operating junction temperature *

Critical rate of rise of reverse voltage

µ

V/ s

dV/dt

10000

dPtot

dTj

1

<

* :

thermal runaway condition for a diode on its own heatsink

Rth(j−a)

August 1999 - Ed: 4A

1/5

STPS1L30A/U

THERMAL RESISTANCES

Symbol

Parameter

Value

30

Unit

°

R_{th (j-l)}

Junction to lead

SMA

SMB

C/W

25

STATIC ELECTRICAL CHARACTERISTICS

Symbol

Parameters

Tests Conditions

Min. Typ. Max.

Unit

°

µ

A

I_R*

Reverse leakage Current Tj = 25 C

V_R= V_RRM

200

°

Tj = 100 C

6

15

mA

V

°

V_F*

Forward Voltage drop

Tj = 25 C

I_F= 1 A

0.395

0.3

°

Tj = 125 C

0.26

°

0.445

Tj = 25 C

I_F= 2 A

Tj = 125°C

0.325 0.375

Pulse test : * tp = 380 µs, δ < 2%

To evaluate the maximum conduction losses use the following equation :

2

P = 0.225 x I_F(AV)+ 0.075 I_{F (RMS)}

Fig. 1:

average forward current.

Fig. 2:

Average forward current versus ambient

Average forward power dissipation versus

δ

temperature ( =0.5).

PF(av)(W)

IF(av)(A)

1.2

0.50

Rth(j-a)=Rth(j-l)

δ = 0.2

δ = 0.1

0.45

0.40

0.35

0.30

0.25

0.20

0.15

0.10

0.05

0.00

δ = 0.5

1.0

0.8

0.6

δ = 0.05

Rth(j-a)=120°C/W

Rth(j-a)=100°C/W

δ = 1

0.4

T

0.2

Tamb(°C)

75

tp

=tp/T

δ

IF(av) (A)

0.6

tp

=tp/T

δ

0.0

0

25

50

100

125

150

0.0

0.2

0.4

0.8

1.0

1.2

Fig. 3-2:

Non repetitive surge peak forward cur-

Fig. 3-1:

Non repetitive surge peak forward cur-

rent versus overload duration (maximum values)

(SMB).

rent versus overload duration (maximum values)

(SMA).

IM(A)

10

8

Ta=25°C

6

Ta=50°C

4

Ta=100°C

IM

2

t

t(s)

δ

=0.5

δ

=0.5

0

1E-3

1E-2

1E-1

1E+0

1E-3

1E-2

1E-1

1E+0

2/5

STPS1L30A/U

Fig. 4-1:

Fig. 4-2:

Relative variation of thermal impedance

junction to ambient versus pulse duration (epoxy

µ

printed circuit board, e(Cu)=35 m, recommended

pad layout) (SMB).

printed circuit board, e(Cu)=35 m, recommended

pad layout) (SMA).

Zth(j-a)/Rth(j-a)

1.0

0.8

0.6

0.4

0.8

0.6

0.4

T

0.2

tp

=tp/T

δ

tp(s)

1E+0

tp(s)

1E+0

δ

0.0

1E-2

0.0

1E-2

1E-1

1E+1

1E+2 5E+2

1E-1

1E+1

1E+2 5E+2

Fig. 6:

Junction capacitance versus reverse

Fig. 5:

Reverse leakage current versus reverse

voltage applied (typical values).

C(pF)

IR(mA)

1E+2

500

Tj=150°C

F=1MHz

Tj=25°C

Tj=125°C

1E+1

Tj=100°C

1E+0

100

1E-1

Tj=25°C

1E-2

VR(V)

1E-3

10

0

5

10

15

20

25

30

1

2

5

10

20

30

Fig. 7-1:

rent (typical values, high level).

Fig. 7-2:

rent (maximum values, low level).

Forward voltage drop versus forward cur-

IFM(A)

3.0

10.00

Tj=125°C

2.5

Tj=100°C

Typical values

Tj=150°C

2.0

Tj=150°C

Tj=25°C

1.5

1.0

0.5

0.0

1.00

Tj=25°C

VFM(V)

0.10

0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

3/5

STPS1L30A/U

Fig. 8-2:

Thermal resistance junction to ambient

Fig. 8-1:

Thermal resistance junction to ambient

versus copper surface under each lead (Epoxy

printed circuit board FR4, copper thickness:

µ

printed circuit board FR4, copper thickness: 35 m)

(SMA).

µ

35 m) (SMB).

Rth(j-a) (°C/W)

140

120

100

80

100

80

60

40

20

0

60

40

20

S(Cu) (cm²)

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

0

1

2

3

4

5

PACKAGE MECHANICAL DATA

SMA

DIMENSIONS

Millimeters Inches

Min. Max.

REF.

E1

Min.

1.90

0.05

1.25

0.15

4.80

3.95

2.25

0.75

Max.

2.70

0.20

1.65

0.41

5.60

4.60

2.95

1.60

A1

A2

b

0.075 0.106

0.002 0.008

0.049 0.065

0.006 0.016

0.189 0.220

0.156 0.181

0.089 0.116

0.030 0.063

D

c

E

A1

E1

D

A2

C

L

b

L

FOOT PRINT DIMENSIONS

(in millimeters)

1.65

1.45

2.40

1.45

4/5

STPS1L30A/U

PACKAGE MECHANICAL DATA

SMB

DIMENSIONS

Millimeters Inches

Min. Min.

REF.

E1

Max.

2.45

0.20

2.20

0.41

5.60

4.60

3.95

1.60

Max.

0.096

0.008

0.087

0.016

0.220

0.181

0.156

0.063

A1

A2

b

1.90

0.05

1.95

0.15

5.10

4.05

3.30

0.75

0.075

0.002

0.077

0.006

0.201

0.159

0.130

0.030

D

E

c

E

A1

E1

D

A2

C

L

b

L

FOOT PRINT DIMENSIONS

(in millimeters)

2.3

1.52

2.75

1.52

Ordering type

STPS1L30U

STPS1L30A

Marking

Package

SMB

Weight

0.107g

0.068g

Base qty

2500

Delivery mode

Tape & reel

G23

GB3

SMA

5000

Tape & reel

Band indicates cathode

Epoxy meets UL94,V0

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of

use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by

implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to

change without notice. This publication supersedes and replaces all information previously supplied.

STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-

proval of STMicroelectronics.

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5/5


型号：	STPS1L30AU
厂家：	ST
描述：	LOW DROP POWER SCHOTTKY RECTIFIER 电力低压降肖特基整流器
文件：	总5页 (文件大小：78K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

STPS1L30AU [STMICROELECTRONICS]

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