STPS20S1Z00CR [STMICROELECTRONICS]

POWER SCHOTTKY RECTIFIER; 功率肖特基整流器


型号：	STPS20S1Z00CR
厂家：	ST
描述：	POWER SCHOTTKY RECTIFIER 功率肖特基整流器
文件：	总7页 (文件大小：95K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

STPS20S100C

POWER SCHOTTKY RECTIFIER

Table 1: Main Product Characteristics

I_F(AV)

V_RRM

T_j

2 x 10 A

100 V

175°C

0.71 V

V_F(max)

FEATURES AND BENEFITS

■

High junction temperature capability for

converters located in confined enrironment

Low leakage current at high temperature

■

TO-220AB

TO-220FPAB

STPS20S100CFP

STPS20S100CT

Low static and dynamic losses as a result of the

Schottky barrier

■

Avalanche specification

DESCRIPTION

Schottky barrier rectifier designed for high

frequency miniature Switched Mode Power

Supplies such as adaptators and on board DC/DC

converters. Packaged in TO-220AB, I²PAK and

TO-220FPAB.

I²PAK

STPS20S100CR

Table 2: Order Codes

Part Numbers

STPS20S100CT

STPS20S100CFP

STPS20S100CR

Marking

STPS20S100CT

STPS20S100CFP

STPS20S100CR

March 2005

REV. 1

1/7

STPS20S100C

Table 3: Absolute Ratings (limiting values, per diode)

Symbol

Parameter

Repetitive peak reverse voltage

RMS forward voltage

Value

100

Unit

V_RRM

I_F(RMS)

TO-220AB /

Average forward current I²PAK

Per diode

Per device

T_c= 150°C

T_c= 140°C

I_F(AV)

δ = 0.5

Per diode

Per device

TO-220FPAC

I_FSM

P_ARM

T_stg

T_j

t_p= 10ms sinusoidal

t_p= 1µs T_j= 25°C

Surge non repetitive forward current

Repetitive peak avalanche power

Storage temperature range

180

7200

-65 to + 175

175

°C

Maximum operating junction temperature *

°C

dV/dt Critical rate of rise of reverse voltage

10000

V/µs

dPtot

dTj Rth(j – a)

* : --------------- > ------------------------- thermal runaway condition for a diode on its own heatsink

Table 4: Thermal Resistance

Symbol

Parameter

Value

2.2

Unit

Per diode

Total

R_th(j-c)

TO-220AB / I²PAK

1.3

Junction to case

°C/W

R_th(c)

Coupling

Per diode

Total

0.3

4.5

R_th(j-c)

3.5

Junction to case

TO-220FPAB

R_th(c)

Coupling

2.5

When the diodes 1 and 2 are used simultaneously:

∆ Tj(diode 1) = P(diode 1) x R (Per diode) + P(diode 2) x R

th(j-c) th(c)

Table 5: Static Electrical Characteristics (per diode)

Symbol

Parameter

Tests conditions

Min.

Typ

1.3

Max.

3.5

Unit

µA

T_j= 25°C

I_R*

V_R= V_RRM

I_F= 5A

Reverse leakage current

T_j= 125°C

T_j= 25°C

T_j= 125°C

T_j= 25°C

T_j= 125°C

T_j= 25°C

T_j= 125°C

4.5

0.73

0.61

0.85

0.71

0.94

0.80

0.57

0.66

0.74

V_F**

I_F= 10A

I_F= 20A

Forward voltage drop

Pulse test:

* tp = 5 ms, δ < 2%

^{** tp = 380 µs,}δ < 2%

To evaluate the conduction losses use the following equation: P = 0.62 x I

+ 0.009 I

F (RMS)

F(AV)

2/7

STPS20S100C

Figure 1: Average forward power dissipation

versus average forward current (per diode)

Figure 2: Average forward current versus

ambient temperature (δ = 0.5, per diode)

(W)

F(AV)

(A)

F(AV)

δ = 0.1

δ = 0.2

δ = 0.5

R_th(j-a)=R_th(j-c)

I²PAK/TO-220AB

δ = 0.05

TO-220FPAB

δ = 1

R_th(j-a)=15°C/W

T (°C)

amb

=tp/T

(A)

F(AV)

=tp/T

100

125

150

175

Figure 3: Normalized avalanche power

derating versus pulse duration

Figure 4: Normalized avalanche power

derating versus junction temperature

(t )

(1µs)

ARM

(t )

(25°C)

ARM

1.2

0.1

0.8

0.6

0.4

0.2

0.01

T (°C)

t (µs)

0.001

100

125

150

0.01

0.1

100

1000

Figure 5: Non repetitive surge peak forward

current versus overload duration (maximum

values, per diode)

Figure 6: Non repetitive surge peak forward

current versus overload duration (maximum

values, per diode) (TO-220FPAB)

(A)

180

160

140

120

100

120

110

100

T_a=25°C

T_a=75°C

T_a=25°C

T_a=75°C

T_a=125°C

δ=0.5

t(s)

T_a=125°C

=0.5

t(s)

1.E-03

1.E-02

1.E-01

1.E+00

1.E-03

1.E-02

1.E-01

1.E+00

3/7

STPS20S100C

Figure 7: Relative variation of thermal

impedance junction to case versus pulse

duration (per diode)

Figure 8: Relative variation of thermal

impedance junction to case versus pulse

duration (per diode) (TO-220FPAB)

th(j-c) th(j-c)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

th(j-c) th(j-c)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

δ = 0.5

δ = 0.2

δ = 0.1

δ = 0.2

δ = 0.1

Single pulse

1.E+01

=tp/T

Single pulse

t (s)

1.E+00

=tp/T

t (s)

1.E-03

1.E-02

1.E-01

1.E+00

1.E-03

1.E-02

1.E-01

Figure 7: Reverse leakage current versus

reverse voltage applied (typical values, per

diode)

Figure 8: Junction capacitance versus reverse

voltage applied (typical values, per diode)

I (mA)

C(pF)

1.E+01

1.E+00

1.E-01

1.E-02

1.E-03

1.E-04

1000

F=1MHz

V_OSC=30mV_RMS

T_j=25°C

T_j=150°C

T_j=125°C

T_j=100°C

100

T_j=75°C

T_j=50°C

T_j=25°C

V (V)

100

Figure 9: Forward voltage drop versus forward

current (per diode)

(A)

100

T_j=125°C

(maximum values)

T_j=125°C

(typical values)

T_j=25°C

(maximum values)

(V)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

4/7

STPS20S100C

Inches

Figure 10: TO-220FPAB Package Mechanical Data

DIMENSIONS

Millimeters

REF.

Min.

4.4

2.5

0.45

0.75

1.15

4.95

2.4

Max.

4.6

2.7

2.75

0.7

1.7

5.2

2.7

10.4

Typ.

30.6

10.6

3.6

16.4

9.3

3.2

Min.

0.173

0.098

0.018

0.03

0.045

0.195

0.094

0.393

0.63

1.126

0.386

0.114

0.626

0.354

0.118

Max.

0.181

0.106

0.108

0.027

0.039

0.067

0.205

0.106

0.409

Typ.

1.205

0.417

0.142

0.646

0.366

0.126

Dia.

Dia

28.6

9.8

2.9

15.9

Figure 11: I²PAK Package Mechanical Data

REF.

DIMENSIONS

Millimeters Inches

Min.

Max.

4.60

2.69

0.93

1.70

0.60

1.36

9.35

2.70

10.4

13.6

3.78

1.40

Min.

Max.

0.181

0.106

0.037

0.067

0.024

0.054

0.368

0.106

0.409

0.535

0.149

0.055

4.40

2.49

0.70

1.14

0.45

1.23

8.95

2.40

10.0

13.1

3.48

1.27

0.173

0.098

0.028

0.044

0.018

0.048

0.352

0.094

0.394

0.516

0.137

0.050

5/7

STPS20S100C

Figure 12: TO-220AB Package Mechanical Data

REF.

DIMENSIONS

Millimeters

Min.

Inches

Min.

Max.

4.60

1.32

2.72

0.70

0.88

1.70

5.15

2.70

10.40

Max.

0.181

0.051

0.107

0.027

0.034

0.066

0.202

0.106

0.409

4.40

1.23

2.40

0.49

0.61

1.14

4.95

2.40

0.173

0.048

0.094

0.019

0.024

0.044

0.194

0.094

0.393

Dia

16.4 typ.

0.645 typ.

0.511

0.104

0.600

0.244

0.137

0.551

0.116

0.620

0.259

0.154

2.65

15.25

6.20

3.50

2.95

15.75

6.60

3.93

2.6 typ.

0.102 typ.

Diam.

3.75

3.85

0.147

0.151

Table 6: Ordering Information

Ordering type

STPS20S100CT

STPS20S100CFP

STPS20S100CR

Marking

STPS20S100CT

Package

Weight

2.20 g

2 g

Base qty Delivery mode

TO-220AB

Tube

STPS20S100CFP

STPS20S100CR

TO-220FPAB

I²PAK

1.49 g

■

Epoxy meets UL94, V0

Cooling method: by conduction (C)

Recommended torque value: 0.8 m.N.

Maximum torque value: 1.0 m.N.

Table 7: Revision History

Date

Revision

Description of Changes

16-Mar-2005

First issue.

6/7

STPS20S100C

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences

of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted

by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject

to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not

authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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7/7

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