STPS20SM120SR [STMICROELECTRONICS]

Power Schottky rectifier;
STPS20SM120SR
型号: STPS20SM120SR
厂家: ST    ST
描述:

Power Schottky rectifier

功效 二极管
文件: 总8页 (文件大小:170K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
STPS20SM120S  
Power Schottky rectifier  
Datasheet production data  
Features  
A
K
A
High current capability  
Avalanche rated  
Low forward voltage drop  
High frequency operation  
K
K
A
Description  
A
A
K
K
This Schottky diode is suited for high frequency  
switch mode power supply.  
A
I2PAK  
STPS20SM120SR  
TO-220AB narrow leads  
STPS20SM120STN  
2
Packaged in TO-220AB narrow leads and I PAK,  
this device is intended to be used in notebook,  
game station and desktop adapters, providing in  
these applications a good efficiency at both low  
and high load.  
Table 1.  
Device summary  
Symbol  
Value  
IF(AV)  
VRRM  
20 A  
120 V  
0.49 V  
150 °C  
(a)  
Figure 1.  
Electrical characteristics  
VF (typ)  
Tj (max)  
I
V
I
"Forward"  
2 x I  
X
O
I
F
I
O
X
V
AR  
RRM  
V
V
R
V
I
R
V
V
V
V
F F(2xI  
F(I  
)
)
o
To  
o
"Reverse"  
I
AR  
a. VARM and IARM must respect the reverse safe  
operating area defined in Figure 9. VAR and IAR are  
pulse measurements (tp < 10 µs). VR, IR, VRRM and  
VF, are static characteristics  
April 2012  
Doc ID 022921 Rev 1  
1/8  
This is information on a product in full production.  
www.st.com  
8
Characteristics  
STPS20SM120S  
1
Characteristics  
Table 2.  
Absolute ratings (limiting values with terminals 1 and 3 short circuited at  
T
= 25 °C, unless otherwise specified)  
amb  
Symbo  
l
Parameter  
Value Unit  
VRRM Repetitive peak reverse voltage  
IF(RMS) Forward rms current  
120  
50  
V
A
IF(AV) Average forward current, δ = 0.5  
Tc = 120 °C  
20  
A
IFSM Surge non repetitive forward current  
tp = 10 ms sinusoidal, Tc = 25 °C  
Tj = 125 °C, tp = 10 µs  
220  
900  
A
(1)  
PARM  
Repetitive peak avalanche power  
W
Maximum repetitive  
peak avalanche voltage  
(2)  
VARM  
tp < 10 µs, Tj < 125 °C, IAR < 6A  
150  
150  
V
V
Maximum single-pulse  
peak avalanche voltage  
(2)  
VASM  
tp < 10 µs, Tj < 125 °C, IAR < 6A  
-65 to  
+175  
Tstg  
Tj  
Storage temperature range  
°C  
°C  
Maximum operating junction temperature(3)  
150  
1. For pulse time duration deratings, please refer to Figure 4. More details regarding the avalanche energy  
measurements and diode validation in the avalanche are provided in the STMicroelectronics Application  
notes AN1768, “Admissible avalanche power of schottky diodes” and AN2025, “Converter improvement  
using Schottky rectifier avalanche specification”.  
2. See Figure 9  
1
dPtot  
dTj  
<
3.  
condition to avoid thermal runaway for a diode on its own heatsink  
Rth(j-a)  
Table 3.  
Symbol  
Thermal resistance  
Parameter  
Value  
Unit  
Rth(j-c) Junction to case  
1.55  
°C/W  
Table 4.  
Symbol  
Static electrical characteristics (terminals 1 and 3 short circuited)  
Parameter  
Test conditions  
Tj = 25 °C  
Tj = 125 °C  
Tj = 125 °C IF = 5 A  
Min.  
Typ.  
Max.  
Unit  
-
-
-
-
-
-
-
40  
15  
210  
40  
µA  
Reverse leakage  
current  
(1)  
IR  
VR =VRRM  
mA  
0.49  
0.54  
0.75  
0.62  
0.89  
0.72  
Tj = 25 °C  
IF = 10 A  
(2)  
VF  
Forward voltage drop Tj = 125 °C  
Tj = 25 °C  
0.57  
0.65  
V
IF = 20 A  
Tj = 125 °C  
1. Pulse test: tp = 5 ms, δ < 2%  
2. Pulse test: tp = 380 µs, δ < 2%  
To evaluate the conduction losses use the following equation:  
2
P = 0.56 x IF(AV) + 0.008 x IF(RMS)  
2/8  
Doc ID 022921 Rev 1  
STPS20SM120S  
Characteristics  
Figure 2.  
Average forward power dissipation Figure 3.  
versus average forward current  
Average forward current versus  
ambient temperature (δ = 0.5)  
PF(AV)(W)  
24  
IF(AV)(A)  
24  
20  
16  
12  
8
R
= R  
th(j-c)  
th(j-a)  
δ = 1  
δ = 0.2  
δ = 0.1  
δ = 0.5  
δ = 0.05  
20  
16  
12  
8
4
T
4
T
Tamb(°C)  
δ = tp / T  
tp  
IF(AV)(A)  
δ = tp / T  
tp  
0
0
0
0
25  
50  
75  
100  
125  
150  
4
8
12  
16  
20  
24  
28  
Figure 4.  
Normalized avalanche power  
derating versus pulse duration  
Figure 5.  
Relative variation of thermal  
impedance junction to case versus  
pulse duration  
PARM(t  
)
p
Zth(j-c)/Rth(j-c)  
1.0  
PARM(10 µs)  
1
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.1  
Single pulse  
0.3  
0.2  
0.1  
0.0  
0.01  
tp(s)  
tp(µs)  
0.001  
1.E-04  
1.E-03  
1.E-02  
1.E-01  
1.E+00  
1
10  
100  
1000  
Figure 6.  
Reverse leakage current versus  
reverse voltage applied  
(typical values)  
Figure 7.  
Junction capacitance versus  
reverse voltage applied  
(typical values)  
C(pF)  
1000  
IR(mA)  
1.E+02  
1.E+01  
1.E+00  
1.E-01  
1.E-02  
1.E-03  
F=1MHz  
Vosc =30mVRMS  
T=25°C  
j
=150  
Tj °C  
Tj=150°C  
Tj=100°C  
Tj=75°C  
Tj=50°C  
Tj=25°C  
VR(V)  
VR(V)  
100  
1
0
10  
20  
30  
40  
50  
60  
70  
80  
90 100 110 120  
10  
100  
1000  
Doc ID 022921 Rev 1  
3/8  
Characteristics  
STPS20SM120S  
Figure 8.  
Forward voltage drop versus  
Figure 9.  
Reverse safe operating area  
forward current  
(t < 10 µs and T < 125 °C)  
p
j
IFM(A)  
1000.0  
100.0  
10.0  
1.0  
Iarm (A)  
8.0  
7.5  
7.0  
6.5  
6.0  
5.5  
T=125°C  
j
(Maximum values)  
T=125°C  
j
(Typical values)  
T=25°C  
j
(Maximum values)  
Varm (V)  
VFM(V)  
5.0  
0.1  
120  
130  
140  
150  
160  
170  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
4/8  
Doc ID 022921 Rev 1  
STPS20SM120S  
Package information  
2
Package information  
Epoxy meets UL94, V0  
Cooling method: by conduction (C)  
Recommended torque value: 0.4 to 0.6 N·m  
In order to meet environmental requirements, ST offers these devices in different grades of  
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK  
specifications, grade definitions and product status are available at: www.st.com.  
®
ECOPACK is an ST trademark.  
Table 5.  
TO-220AB narrow leads dimensions  
Dimensions  
Millimeters  
Ref.  
Inches  
Min.  
Typ. Max. Min.  
4.60 0.17  
Typ. Max.  
A
b
4.40  
0.61  
0.95  
0.48  
15.25  
0.18  
0.034  
0.047  
0.027  
0.62  
0.88 0.024  
1.20 0.037  
0.70 0.019  
15.75 0.60  
b1  
c
A
P
E
F
Q
D
H1  
D1  
E
1.27  
0.05  
D
D1  
10.00  
2.40  
4.95  
1.23  
6.20  
2.40  
13.00  
2.60  
10.40 0.39  
2.70 0.094  
0.41  
L20  
L30  
L1  
e
0.106  
0.20  
e1  
F
5.15  
1.32 0.048  
6.60 0.24  
0.19  
b1(x3)  
J1  
L
0.052  
0.26  
H1  
J1  
L
1
2
3
C
e
2.72 0.095  
14.00 0.51  
2.90 0.102  
0.107  
0.55  
b (x3)  
e1  
L1  
L20  
L30  
P
0.114  
0.61  
15.40  
28.90  
1.14  
3.75  
2.65  
3.85 0.147  
2.95 0.104  
0.151  
0.116  
Q
Doc ID 022921 Rev 1  
5/8  
Package information  
STPS20SM120S  
2
Devices in I PAK with nickel-plated back frame must NOT be mounted by frame soldering  
like SMDs. Such devices are intended to be through-hole mounted ONLY and in no  
circumstances shall ST be held liable for any lack of performance or damage arising out of  
soldering of nickel-plated back frames.  
2
Table 6.  
I PAK dimensions  
Dimensions  
Millimeters  
Ref.  
Inches  
Min.  
Max.  
Min.  
Max.  
A
A
A1  
b
4.40  
2.40  
0.61  
1.14  
0.49  
1.23  
8.95  
2.40  
4.95  
10  
4.60  
2.72  
0.88  
1.70  
0.70  
1.32  
9.35  
2.70  
5.15  
10.40  
14  
0.173  
0.094  
0.024  
0.044  
0.019  
0.048  
0.352  
0.094  
0.195  
0.394  
0.512  
0.138  
0.050  
0.181  
0.107  
0.035  
0.067  
0.028  
0.052  
0.368  
0.106  
0.203  
0.409  
0.551  
0.155  
0.055  
E
c2  
L2  
b1  
c
D
c2  
D
L1  
A1  
b1  
b
L
e
e1  
E
c
e
e1  
L
13  
L1  
L2  
3.50  
1.27  
3.93  
1.40  
6/8  
Doc ID 022921 Rev 1  
STPS20SM120S  
Ordering information  
3
Ordering information  
Table 7.  
Order code  
STPS20SM120SR  
Ordering information  
Marking  
Package  
Weight Base qty Delivery mode  
PS20SM120SR  
I2PAK  
1.49 g  
1.9 g  
50  
50  
Tube  
Tube  
TO-220AB  
STPS20SM120STN  
PS20SM120STN  
narrow leads  
4
Revision history  
Table 8.  
Date  
02-Apr-2012  
Document revision history  
Revision  
Changes  
1
First issue.  
Doc ID 022921 Rev 1  
7/8  
STPS20SM120S  
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8/8  
Doc ID 022921 Rev 1  

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