STPS30M60CT [STMICROELECTRONICS]
Power Schottky rectifier; 功率肖特基整流器型号: | STPS30M60CT |
厂家: | ST |
描述: | Power Schottky rectifier |
文件: | 总10页 (文件大小:119K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
STPS30M60C
Power Schottky rectifier
Features
A1
K
■ High current capability
■ Avalanche rated
A2
K
K
■ Low forward voltage drop
■ High frequency operation
A2
A2
K
Description
A1
D2PAK
STPS30M60CG-TR
A1
I2PAK
The STPS30M60C is a dual diode Schottky
rectifier, suited for high frequency switch mode
power supply.
STPS30M60CR
K
2
2
Packaged in TO-220AB, I PAK and D PAK, this
device is intended to be used in notebook, game
station and desktop adapters, providing in these
applications a good efficiency at both low and
high load.
A2
K
A1
TO-220AB
STPS30M60CT
Table 1.
Device summary
Symbol
IF(AV)
VRRM
Value
(a)
Figure 1.
Electrical characteristics
2 x 15 A
60 V
I
V
I
VF (typ)
Tj (max)
0.380 V
150 °C
"Forward"
2 x I
X
O
I
F
I
O
X
V
AR
RRM
V
R
V
V
I
R
V
V
F(I
V
V
F F(2xI
)
)
o
To
o
"Reverse"
I
AR
a. VARM and IARM must respect the reverse safe
operating area defined in Figure 12. VAR and IAR are
pulse measurements (tp < 1 µs). VR, IR, VRRM and VF,
are static characteristics
November 2011
Doc ID 022020 Rev 1
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www.st.com
10
Characteristics
STPS30M60C
1
Characteristics
Table 2.
Absolute ratings (limiting values, per diode, at T = 25 °C unless
amb
otherwise specified)
Symbol
Parameter
Value
Unit
VRRM Repetitive peak reverse voltage
60
60
V
A
IF(RMS) Forward rms current
Tc = 135 °C Per diode
Tc = 135 °C Per device
tp = 10 ms sine-wave
Tj = 25 °C, tp = 1 µs
15
IF(AV) Average forward current, δ = 0.5
A
30
IFSM
Surge non repetitive forward current
Repetitive peak avalanche power
Maximum repetitive peak
400
17600
A
(1)
PARM
W
(2)
(2)
VARM
tp < 1 µs, Tj < 150 °C, IAR < 66 A
80
80
V
V
avalanche voltage
Maximum single-pulse
peak avalanche voltage
VARM
tp < 1 µs, Tj < 150 °C, IAR < 66 A
Tstg
Tj
Storage temperature range
-65 to +175
150
°C
°C
Maximum operating junction temperature(3)
1. For temperature or pulse time duration deratings, please refer to Figure 4 and 5. More details regarding the
avalanche energy measurements and diode validation in the avalanche are provided in the application
notes AN1768 and AN2025.
2. See Figure 12
1
dPtot
dTj
<
3.
condition to avoid thermal runaway for a diode on its own heatsink
Rth(j-a)
Table 3.
Symbol
Thermal parameters
Parameter
Value
Unit
per diode
total
1.3
Rth(j-c) Junction to case
Rth(c) Coupling
°C/W
°C/W
0.73
0.15
When the two diodes 1 and 2 are used simultaneously:
ΔT (diode 1) = P(diode 1) x R
(Per diode) + P(diode 2) x R
th(c)
j
th(j-c)
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Doc ID 022020 Rev 1
STPS30M60C
Characteristics
Table 4.
Symbol
Static electrical characteristics (per diode)
Parameter
Test conditions
Tj = 25 °C
Min.
Typ.
Max.
Unit
-
-
-
-
-
-
20
80
µA
(1)
IR
Reverse leakage current
VR = VRRM
IF = 7.5 A
IF = 15 A
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
15
50
mA
0.475
0.380
0.540
0.470
0.515
0.425
0.590
0.530
(2)
VF
Forward voltage drop
V
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
2
P = 0.385 x IF(AV) + 0.0097 x IF (RMS)
Figure 2.
Average forward power dissipation Figure 3.
versus average forward current
(per diode)
Average forward current versus
ambient temperature
(δ = 0.5, per diode)
PF(AV)(W)
14
IF(AV)(A)
18
R
= R
th(j-c)
16
th(j-a)
δ = 0.05
δ = 1
δ = 0.1
δ = 0.5
12
10
8
δ = 0.2
14
12
10
8
6
6
4
4
T
2
2
Tamb(°C)
75
δ = tp / T
tp
14
IF(AV)(A)
0
0
0
2
4
6
8
10
12
16
18
20
22
0
25
50
100
125
150
Figure 4.
Normalized avalanche power
derating versus pulse duration
Figure 5.
Normalized avalanche power
derating versus junction
temperature
PARM(Tj)
PARM(t )
p
PARM(25 °C)
PARM(1µs)
1.2
1
1
0.1
0.8
0.6
0.4
0.2
0
0.01
Tj(°C)
tp(µs)
1000
0.001
0.01
0.1
1
10
100
150
25
50
75
100
125
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Characteristics
STPS30M60C
Figure 6.
Non repetitive surge peak forward Figure 7.
Relative thermal impedance
current versus overload duration
(maximum values, per diode)
junction to case versus pulse
duration
Zth(j-c)/Rth(j-c)
IM(A)
240
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
220
200
180
160
140
120
100
80
Tc = 25 °C
Tc = 75 °C
Tc = 125 °C
60
Single pulse
IM
40
t
20
δ = 0.5
tp(s)
1.E+00
t(s)
0
1.E-03
1.E-02
1.E-01
1.E+00
1.E-04
1.E-03
1.E-02
1.E-01
Figure 8.
Reverse leakage current versus
reverse voltage applied
Figure 9.
Junction capacitance versus
reverse voltage applied
(typical values, per diode)
(typical values, per diode)
C(pF)
10000
IR(mA)
1.E+02
1.E+01
1.E+00
1.E-01
1.E-02
1.E-03
Tj = 150 °C
F = 1 MHz
Vosc = 30 mVRMS
Tj = 25 °C
Tj = 125 °C
Tj = 100 °C
Tj = 75 °C
1000
Tj = 50 °C
Tj = 25 °C
VR(V)
100
VR(V)
60
100
1
0
10
20
30
40
50
10
Figure 10. Forward voltage drop versus
forward current (per diode)
Figure 11. Thermal resistance junction to
ambient versus copper surface
under tab
Rth(j-a)(°C/W)
IFM(A)
1000.0
80
epoxy printed board copper thickness = 35 µm
70
Tj = 125 °C
(Maximum values)
D2PAK
100.0
60
50
40
30
20
10
Tj = 125 °C
(Typical values)
10.0
Tj = 25 °C
(Maximum values)
1.0
SCu(cm2)
35 40
VFM(V)
1.4 1.6
0.1
0.0
0
0.2
0.4
0.6
0.8
1.0
1.2
0
5
10
15
20
25
30
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Doc ID 022020 Rev 1
STPS30M60C
Characteristics
Figure 12. Reverse safe operating area (t < 1 µs and T < 150 °C)
p
j
Iarm (A)
70.0
65.0
60.0
55.0
50.0
45.0
40.0
Iarm (Varm) 150 °C, 1µs
Varm (V)
115 120
80
85
90
95
100
105
110
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Package information
STPS30M60C
2
Package information
●
●
●
Epoxy meets UL94, V0
Cooling method: by conduction (C)
Recommended torque value: 0.4 to 0.6 N·m
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
®
ECOPACK is an ST trademark.
Table 5.
TO-220AB dimensions
Dimensions
Millimeters
Ref.
Inches
Min. Max.
Min.
Max.
A
C
4.40
1.23
2.40
0.49
0.61
1.14
1.14
4.95
2.40
10
4.60
1.32
2.72
0.70
0.88
1.70
1.70
5.15
2.70
10.40
0.173
0.048
0.094
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.181
0.051
0.107
0.027
0.034
0.066
0.066
0.202
0.106
0.409
A
H2
D
Dia
C
E
L5
F
L7
F1
F2
G
L6
L4
L2
F2
F1
D
L9
G1
H2
L2
L4
L5
L6
L7
L9
M
16.4 Typ.
0.645 Typ.
F
13
14
0.511
0.104
0.600
0.244
0.137
0.551
0.116
0.620
0.259
0.154
M
G1
E
2.65
15.25
6.20
3.50
2.95
15.75
6.60
3.93
G
2.6 Typ.
0.102 Typ.
Dia.
3.75
3.85
0.147
0.151
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STPS30M60C
Package information
Dimensions
2
Table 6.
D PAK dimensions
Ref.
Millimeters
Inches
Min.
Max.
Min.
Max.
A
A1
A2
B
4.40
2.49
0.03
0.70
1.14
0.45
1.23
8.95
10.00
4.88
15.00
1.27
1.40
2.40
4.60
2.69
0.23
0.93
1.70
0.60
1.36
9.35
10.40
5.28
15.85
1.40
1.75
3.20
0.173
0.098
0.001
0.027
0.045
0.017
0.048
0.352
0.393
0.192
0.590
0.050
0.055
0.094
0.181
0.106
0.009
0.037
0.067
0.024
0.054
0.368
0.409
0.208
0.624
0.055
0.069
0.126
A
E
C2
L2
L3
D
B2
C
L
A1
C2
D
B2
B
R
C
E
G
G
A2
L
M
L2
L3
M
*
V2
* FLAT ZONE NO LESS THAN 2mm
R
0.40 typ.
0°
0.016 typ.
V2
8°
0°
8°
2
Figure 13. D PAK footprint (dimensions in mm)
16.90
10.30
5.08
1.30
3.70
8.90
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Package information
Table 7.
STPS30M60C
2
I PAK dimensions
Dimensions
Millimeters
Ref.
Inches
Min.
Max.
Min.
Max.
A
A
A1
b
4.40
2.40
0.61
1.14
0.49
1.23
8.95
2.40
4.95
10
4.60
2.72
0.88
1.70
0.70
1.32
9.35
2.70
5.15
10.40
14
0.173
0.094
0.024
0.044
0.019
0.048
0.352
0.094
0.195
0.394
0.512
0.138
0.050
0.181
0.107
0.035
0.067
0.028
0.052
0.368
0.106
0.203
0.409
0.551
0.155
0.055
E
c2
L2
b1
c
D
c2
D
L1
A1
b1
b
L
e
e1
E
c
e
e1
L
13
L1
L2
3.50
1.27
3.93
1.40
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STPS30M60C
Ordering information
3
Ordering information
Table 8.
Ordering information
Order code
Marking
Package
Weight Base qty Delivery mode
STPS30M60CT
STPS30M60CR
STPS30M60CG-TR
STPS30M60CT
STPS30M60CR
STPS30M60CG
TO-220AB
I2PAK
2.20 g
1.49 g
1.48 g
50
50
Tube
Tube
D2PAK
1000
Tape and reel
4
Revision history
Table 9.
Date
02-Nov-2011
Revision history
Revision
Changes
1
First issue.
Doc ID 022020 Rev 1
9/10
STPS30M60C
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