STPS6045CP_03 [STMICROELECTRONICS]

POWER SCHOTTKY RECTIFIER; 功率肖特基整流器


型号：	STPS6045CP_03
厂家：	ST
描述：	POWER SCHOTTKY RECTIFIER 功率肖特基整流器
文件：	总5页 (文件大小：118K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

STPS6045CP/CPI/CW

POWER SCHOTTKY RECTIFIER

MAIN PRODUCT CHARACTERISTICS

I_F(AV)

V_RRM

2x30 A

45 V

Tj (max)

V_F(max)

175 °C

0.63 V

FEATURES AND BENEFITS

Insulated

TOP-3I

STPS6045CPI

■

VERY SMALL CONDUCTION LOSSES

NEGLIGIBLE SWITCHING LOSSES

EXTREME FAST SWITCHING

LOW THERMAL RESISTANCE

INSULATED PACKAGE: TOP-3I

Insulating voltage = 2500V_RMS

Capacitance = 12pF

■

AVALANCHE CAPABILITY SPECIFIED

DESCRIPTION

Dual center tap Schottky rectifier suited for

switchmode power supply and high frequency DC

to DC converters.

TO-247

SOT-93

Packaged either in SOT-93, TOP-3I or TO-247,

this device is intended for use in low voltage, high

frequency inverters, free wheeling and polarity

protection applications.

STPS6045CW

STPS6045CP

ABSOLUTE RATINGS (limiting values, per diode)

Symbol

V_RRM

Parameter

Repetitive peak reverse voltage

Value

Unit

I_F(RMS)

I_F(AV)

RMS forward current

SOT-93

TO-247

Average forward current

δ = 0.5

Tc = 150°C

Tc = 130°C

Per diode

Per device

TOP-3I

400

I_FSM

I_RRM

Surge non repetitive forward current

Repetitive Peak reverse current

tp = 10 ms sinusoidal

tp = 2 µs square

F = 1kHz

I_RSM

P_ARM

T_stg

Non repetitive peak reverse current

Repetitive peak avalanche power

Storage temperature range

tp = 100 µs square

tp = 1µs Tj = 25°C

10600

- 65 to + 175 °C

175

°C

Maximum operating junction temperature *

Critical rate of rise of reverse voltage

dV/dt

10000

V/µs

dPtot

* :

thermal runaway condition for a diode on its own heatsink

dTj

Rth(j − a)

July 2003 - Ed: 7B

1/5

STPS6045CP/CPI/CW

THERMAL RESISTANCES

Symbol

Parameter

Value

Unit

R_{th (j-c)}

SOT-93 / TO-247

0.95

0.55

°C/W

Junction to case

Per diode

Total

TOP-3I

1.8

1.1

Per diode

Total

R_{th (c)}

SOT-93 / TO-247

TOP-3I

0.15

0.4

Coupling

When the diodes 1 and 2 are used simultaneously:

∆ T_J(diode 1) = P(diode1) x R_th(j-c)(Per diode) + P(diode 2) x R_th(c)

STATIC ELECTRICAL CHARACTERISTICS (per diode)

Symbol

Parameter

Tests Conditions

Min. Typ. Max.

Unit

I_R*

500

µA

Reverse leakage

current

Tj = 25°C

Tj = 125°C

V_R= V_RRM

V_F*

0.53

0.63

0.84

0.78

Forward voltage drop Tj = 125°C

Tj = 25°C

I_F= 30 A

I_F= 60 A

0.68

Tj = 125°C

Pulse test : ** tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation:

P = 0.48 x I_F(AV)+ 0.005 I_{F (RMS)}

Fig. 1: Average forward power dissipation

versus average forward current (per diode).

Fig. 2: Average current versus ambient

temperature (δ=0.5, per diode).

PF(av)(W)

IF(av)(A)

δ = 0.1 δ = 0.2

δ = 0.5

SOT-93

TO-247

δ = 0.05

Rth(j-a)=Rth(j-c)

Rth(j-a)=10°C/W

δ = 1

TOP-3I

=tp/T

IF(av) (A)

Tamb(°C)

100

125

150

175

Fig. 3: Normalized avalanche power derating

versus pulse duration.

Fig. 4: Normalized avalanche power derating

versus junction temperature.

(t )

(1µs)

ARM

(t )

(25°C)

ARM

1.2

0.1

0.8

0.6

0.4

0.2

0.01

T (°C)

t (µs)

0.001

100

125

150

0.01

0.1

100

1000

2/5

STPS6045CP/CPI/CW

Fig. 5-1: Non repetitive surge peak forward current

versus overload duration (maximum values, per

diode) (SOT-93 and TO-247).

Fig. 5-2: Non repetitive surge peak forward current

versus overload duration (maximum values, per

diode) (TOP-3I).

IM(A)

350

250

300

250

200

150

200

Tc=75°C

Tc=100°C

150

Tc=100°C

100

Tc=125°C

100

Tc=125°C

δ=0.5

t(s)

δ=0.5

t(s)

1E-3

1E-2

1E-1

1E+0

1E-3

1E-2

1E-1

1E+0

Fig. 6: Relative variation of thermal transient

impedance junction to case versus pulse duration.

Fig. 7: Reverse leakage current versus reverse

voltage applied (typical values, per diode).

IR(µA)

Zth(j-c)/Rth(j-c)

1E+5

1.0

Tj=150°C

Tj=125°C

1E+4

0.8

Tj=100°C

1E+3

Tj=75°C

δ = 0.5

0.6

Tj=50°C

1E+2

0.4

δ = 0.2

δ = 0.1

Tj=25°C

1E+1

0.2

0.0

Single pulse

=tp/T

tp(s)

1E+0

VR(V)

1E-4

1E-3

1E-2

1E-1

1E+0

Fig. 9: Forward voltage drop versus forward

current (maximum values, per diode).

Fig. 8: Junction capacitance versus reverse

voltage applied (typical values, per diode).

IFM(A)

C(nF)

200

5.0

F=1MHz

Tj=25°C

100

Typical values

Tj=125°C

Tj=25°C

1.0

Tj=125°C

VFM(V)

VR(V)

0.1

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

3/5

STPS6045CP/CPI/CW

PACKAGE MECHANICAL DATA

SOT-93

DIMENSIONS

Millimeters

Min. Typ. Max. Min. Typ. Max.

REF.

Inches

4.70

1.90

4.90 1.185

2.10 0.075

0.193

0.083

2.50

2.00

0.098

0.078

0.50

1.10

0.78 0.020

1.30 0.043

0.031

0.051

1.75

2.10

0.069

0.083

10.80

14.70

11.10 0.425

15.20 0.279

12.20

0.437

0.598

0.480

0.638

16.20

18.0

0.709

1.220

3.95

4.00

4.15 0.156

4.10 0.157

0.163

0.161

31.00

PACKAGE MECHANICAL DATA

TOP-3I (isolated)

DIMENSIONS

REF.

Millimeters

Inches

Min. Typ. Max. Min. Typ. Max.

4.4

1.45

14.35

0.5

4.6 0.173

1.55 0.057

15.60 0.565

0.7 0.020

2.9 0.106

16.5 0.622

21.1 0.815

15.5 0.594

5.65 0.213

3.65 0.134

4.17 0.161

1.40 0.047

0.181

0.061

0.614

0.028

0.114

0.650

0.831

0.610

0.222

0.144

0.164

0.055

2.7

15.8

20.4

15.1

5.4

3.4

4.08

1.20

4.60

0.181

4/5

STPS6045CP/CPI/CW

DIMENSIONS

PACKAGE MECHANICAL DATA

TO-247

REF.

Millimeters

Inches

Min. Typ. Max. Min. Typ. Max.

Dia.

4.85

2.20

0.40

1.00

5.15 0.191

2.60 0.086

0.80 0.015

1.40 0.039

0.203

0.102

0.031

0.055

3.00

2.00

0.118

0.078

F3 2.00

F4 3.00

2.40 0.078

3.40 0.118

0.094

0.133

10.90

0.429

15.45

19.85

15.75 0.608

20.15 0.781

4.30 0.145

0.620

0.793

0.169

L2 L4

L1 3.70

L3 14.20

18.50

0.728

14.80 0.559

3.00 0.078

3.65 0.139

0.582

0.118

0.143

34.60

5.50

1.362

0.216

2.00

5°

60°

5°

60°

F(x3)

Dia. 3.55

Type

Marking

Package

Weight

Base qty

Delivery mode

STPS6045CP STPS6045CP

STPS6045CPI STPS6045CPI

STPS6045CW STPS6045CW

Cooling method: by conduction (C)

Recommended torque value: 0.8 N.m.

Maximum torque value: 1.0 N.m.

Epoxy meets UL94,V0

SOT-93

TOP-3I

TO-247

3.97 g.

4.46 g.

4.36 g.

120

Tube

Bulk

Tube

■

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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by

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change without notice. This publication supersedes and replaces all information previously supplied.

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5/5

STPS6045CP_03 [STMICROELECTRONICS]

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