STPS640CM [STMICROELECTRONICS]
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| 型号： | STPS640CM |
| 厂家： | 
ST |
| 描述： | 暂无描述 |
| 文件： | 总6页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STPS640CT/CF/CB
POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
A1
IF(AV)
VRRM
2 x 3 A
40 V
K
A2
Tj (max)
VF (max)
150 °C
0.57 V
K
FEATURESAND BENEFITS
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLESWITCHING LOSSES
EXTREMELY FAST SWITCHING
LOW FORWARD DROP VOLTAGE
LOW CAPACITANCE
A2
A1
DPAK
STPS640CB
LOW THERMAL RESISTANCE
INSULATEDPACKAGE:
Insulatingvoltage = 2000V DC
Capacitance= 12pF
SMD PACKAGE (tapeand reel option: -TR)
A2
DESCRIPTION
K
A2
A1
K
Dual Schottky rectifier suited to Switch Mode
Power Suppliesand other Power Converters.
A1
ISOWATT220AB
STPS640CF
This device is intended for use in low and medium
voltage operation, and particulary, in high fre-
quency circuitries where low switching losses are
required (free wheeling and polarity protection).
TO-220AB
STPS640CT
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
Parameter
Value
40
10
6
Unit
VRRM Repetitivepeak reverse voltage
IF(RMS) RMS forward current
V
A
TO-220AB/ ISOWATT220AB
DPAK
IF(AV) Average forward current δ = 0.5
TO-220AB
ISOWATT220AB Tc = 130°C
DPAK Tc = 120°C
tp = 10 ms Sinusoidal
Tc = 135°C
3
A
IFSM
IRRM
Tstg
Tj
Surge non repetitive forward current
Repetitivepeak reverse current
Storage temperaturerange
75
1
A
A
µ
tp = 2 s F = 1kHz square
- 65 to + 150 °C
Maximum operatingjunction temperature
150
°C
µ
V/ s
dV/dt Critical rate of rise of reverse voltage
10000
August 1999 - Ed: 4A
1/6
STPS640CT/CF/CB
THERMAL RESISTANCES
Symbol
Parameter
TO-220AB/DPAK
Value
Unit
Rth (j-c) Junction to case
Per diode
Total
5.5
3
°C/W
ISOWATT220AB
Per diode
Total
7.5
5.2
Rth(c)
Coupling
TO-220AB
0.5
3
°C/W
ISOWATT220AB
When the diodes 1 and 2 are used simultaneously:
∆
Tj(diode 1) = P(diode1)x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
STATIC ELECTRICAL CHARACTERISTICS
(per diode)
Symbol
Tests Conditions
Min. Typ. Max.
Unit
µA
mA
V
IR *
Reverse leakage current
Forward voltage drop
Tj = 25°C
VR = VRRM
100
Tj = 125°C
Tj = 25°C
2
10
VF *
IF = 3 A
IF = 6 A
IF = 3 A
IF = 6 A
0.63
0.84
0.57
0.72
°
Tj = 25 C
Tj = 125°C
Tj = 125°C
0.5
0.67
Pulse test : * tp = 380 µs, δ < 2%
To evaluate the maximum conduction losses use the following equation :
2
P = 0.42 x IF(AV) + 0.050 IF
(RMS)
Fig. 1: Average forward power dissipation versus
averageforward current (per diode).
Fig. 2: Average current versusambient temperature
( = 0.5, per diode).
δ
IF(av)(A)
PF(av)(W)
2.50
4.0
3.5
δ = 0.2
δ = 0.5
δ = 0.1
δ = 0.05
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
TO-220AB/DPAK
Rth(j-a)=Rth(j-c)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
ISOWATT220AB
δ = 1
Rth(j-a)=15°C/W
T
T
tp
=tp/T
δ
tp
=tp/T
δ
Tamb(°C)
IF(av) (A)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
25
50
75
100
125
150
2/6
STPS640CT/CF/CB
Fig. 3-1:
versus overload duration.
Fig. 3-2:
Nonrepetitive surgepeakforward current
versus overload duration.
Nonrepetitive surgepeak forwardcurrent
(Maximum values, per diode)(TO-220AB/ DPAK).
(Maximum values, per diode) (ISOWATT220AB).
IM(A)
IM(A)
45
40
35
30
40
35
30
25
25
Tc=75°C
Tc=75°C
20
20
Tc=100°C
Tc=100°C
15
15
Tc=130°C
Tc=135°C
IM
10
IM
10
t
t
5
5
δ=0.5
δ=0.5
t(s)
t(s)
0
0
1E-3
1E-2
1E-1
1E+0
1E-3
1E-2
1E-1
1E+0
Fig. 4.1: Relative variation of thermal transient
impedancejunction to case versus pulse duration
(TO-220AB / DPAK).
Fig. 4-2: Relative variation of thermal transient
impedance junction to case versus pulse duration
(ISOWATT220AB).
Zth(j-c)/Rth(j-c)
Zth(j-c)/Rth(j-c)
1.0
1.0
0.8
0.8
δ = 0.5
δ = 0.5
0.6
0.6
δ
= 0.2
0.4
0.2
0.0
0.4
δ = 0.2
δ = 0.1
T
T
δ = 0.1
0.2
Single pulse
tp
=tp/T
δ
tp(s)
tp(s)
Single pulse
=tp/T
δ
tp
0.0
1E-3
1E-3
1E-2
1E-1
1E+0
1E-2
1E-1
1E+0
1E+1
Fig. 5:
Fig. 6:
Junction capacitance versus reverse
voltage applied (typical values, per diode).
Reverse leakage current versus reverse
voltage applied (typical values, per diode).
C(pF)
IR(A)
500
1E-2
F=1MHz
Tj=25°C
Tj=150°C
Tj=125°C
1E-3
100
Tj=100°C
1E-4
Tj=75°C
VR(V)
VR(V)
1E-5
10
0
5
10
15
20
25
30
35
40
1
2
5
10
20
50
3/6
STPS640CT/CF/CB
Fig.7: Forward voltagedropversus forwardcurrent
(maximum values, per diode).
Fig. 8: Thermalresistancejunctionto ambientversus
copper surface under tab (Epoxy printed circuit
board FR4, copper thickness: 35µm).
Rth(j-a) (°C/W)
IFM(A)
10.0
80
70
60
50
40
30
20
Typical values
Tj=150°C
Tj=125°C
1.0
VFM(V)
10
0
S(Cu) (cm )
0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0
4
8
12 16 20 24 28 32 36 40
PACKAGE MECHANICAL DATA
TO-220AB
DIMENSIONS
REF.
Millimeters
Min. Max.
4.40 4.60
Inches
Min.
Max.
A
C
0.173
0.048
0.094
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.181
0.051
0.107
0.027
0.034
0.066
0.066
0.202
0.106
0.409
1.23
2.40
0.49
0.61
1.14
1.14
4.95
2.40
10
1.32
2.72
0.70
0.88
1.70
1.70
5.15
2.70
10.40
A
H2
D
Dia
C
E
L5
L7
F
F1
F2
G
L6
L4
L2
F2
F1
G1
H2
L2
L4
L5
L6
L7
L9
M
D
L9
16.4 typ.
0.645 typ.
13
14
0.511
0.104
0.600
0.244
0.137
0.551
0.116
0.620
0.259
0.154
F
2.65
15.25
6.20
3.50
2.95
15.75
6.60
3.93
M
G1
E
G
2.6 typ.
0.102 typ.
Diam.
3.75
3.85
0.147
0.151
4/6
STPS640CT/CF/CB
PACKAGE MECHANICAL DATA
DPAK
DIMENSIONS
Millimeters Inches
Min.
REF.
Min.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.35
Max
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
6.60
4.60
10.10
Max.
0.094
0.043
0.009
0.035
0.212
0.023
0.023
0.244
0.259
0.181
0.397
A
A1
A2
B
0.086
0.035
0.001
0.025
0.204
0.017
0.018
0.236
0.251
0.173
0.368
B2
C
C2
D
E
G
H
L2
L4
V2
0.80 typ.
0.031 typ.
0.60
1.00
0.023
0.039
0°
8°
0°
8°
FOOTPRINT DIMENSIONS
(in millimeters)
6.7
6.7
3
3
1.6
1.6
2.3 2.3
5/6
STPS640CT/CF/CB
PACKAGE MECHANICAL DATA
ISOWATT220AB
DIMENSIONS
Millimeters Inches
Min. Max.
REF.
Min.
4.40
2.50
2.50
0.40
0.75
1.15
1.15
4.95
2.40
Max.
4.60
2.70
2.75
0.70
1.00
1.70
1.70
5.20
2.70
A
B
0.173 0.181
0.098 0.106
0.098 0.108
0.016 0.028
0.030 0.039
0.045 0.067
0.045 0.067
0.195 0.205
0.094 0.106
D
E
F
F1
F2
G
G1
H
10.00 10.40 0.394 0.409
16.00 typ. 0.630 typ.
28.60 30.60 1.125 1.205
9.80 10.60 0.386 0.417
15.90 16.40 0.626 0.646
L2
L3
L4
L6
L7
Diam
9.00
3.00
9.30
3.20
0.354 0.366
0.118 0.126
Orderingtype
Marking
Package
Weight
Base qty Deliverymode
STPS640CT
STPS640CB
STPS640CT
S640C
TO-220AB
DPAK
2.20g
0.30g
0.30g
2.08g
50
75
Tube
Tube
STPS640CB-TR
S640C
DPAK
2500
50
Tapeand reel
Tube
STPS640CF
STPS640CF
ISOWATT220AB
Epoxymeets UL94,V0
Informationfurnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor forany infringementof patents or other rights of thirdparties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
1999 STMicroelectronics - Printed in Italy - All rights reserved.
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