STQ1NE10L-AP [STMICROELECTRONICS]

N-channel 100V - 0.3ヘ - 1A - TO-92 STripFET⑩ Power MOSFET; N沟道100V - 0.3ヘ - 1A - TO- 92 STripFET⑩功率MOSFET


型号：	STQ1NE10L-AP
厂家：	ST
描述：	N-channel 100V - 0.3ヘ - 1A - TO-92 STripFET⑩ Power MOSFET N沟道100V - 0.3ヘ - 1A - TO- 92 STripFET⑩功率MOSFET
文件：	总13页 (文件大小：284K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

STQ1NE10L

N-channel 100V - 0.3Ω - 1A - TO-92

STripFET™ Power MOSFET

General features

Type

V_DSS

100V

R_DS(on)

I_D

STQ1NE10L

<0.4Ω

■ Exceptional high dv/dt capability

■ 100% avalanche tested

■ Avalanche rugged technology

■ Low threshold drive

TO-92

(Ammopack)

TO-92

Description

This Power MOSFET is the latest development of

STMicroelectronics unique "Single Feature

Size™" strip-based process. The resulting

transistor shows extremely high packing density

for low on-resistance, rugged avalanche

characteristics and less critical alignment steps

therefore a remarkable manufacturing

reproducibility.

Internal schematic diagram

Applications

■ Switching application

Order codes

Part number

Marking

Package

Packaging

STQ1NE10L

Q1NE10L

TO-92

Tube

STQ1NE10L-AP

Ammopak

January 2007

Rev 5

1/13

www.st.com

Contents

STQ1NE10L

Contents

Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1

Electrical characteristics (curves)

. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

2/13

STQ1NE10L

Electrical ratings

Table 1.

Symbol

Absolute maximum ratings

Parameter

Value

Unit

V_DS

V_GS

I_D

Drain-source voltage (V_GS= 0)

Gate-source voltage

100

Drain current (continuous) at T_C= 25°C

Drain current (continuous) at T_C=100°C

Drain gate current (continuous)

Gate source current (continuous)

Drain current (pulsed)

I_D

0.6

I_DG

I_GS

(1)

I_DM

(2)

P_TOT

Total dissipation at T_C= 25°C

Derating factor

0.025

W/°C

V/ns

dv/dt⁽³⁾Peak diode recovery voltage slope

(4)

E_AS

Single pulse avalanche energy

Storage temperature

400

T_stg

T_J

-55 to 150

°C

Operating junction temperature

1. Pulse width limited by safe operating area.

2. Related to Rthj -l

3. I_SD≤1A, di/dt ≤200A/µs, V_DD≤V_(BR)DSS, T_J≤T_JMAX

4. Starting T_J= 25 ^oC, I_D= 1A, V_DD= 50V

Table 2.

Symbol

Thermal data

Parameter

Value

Unit

R_thJC

R_thJA

Thermal resistance junction-case max

Thermal resistance junction-ambient max

°C/W

125

Maximum lead temperature for soldering

purpose

T_l

260

°C

3/13

Electrical characteristics

STQ1NE10L

Electrical characteristics

= 25°C unless otherwise specified)

CASE

Table 3.

Symbol

On/off states

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V_(BR)DGClamped voltage

I_D= 250µA, V_GS= 0

100

V_DS= Max rating

Zero gate voltage

I_DSS

µA

V_DS= Max rating

T_C= 125°C

drain current (V_GS= 0)

Gate-body leakage

I_GSS

V_GS= 16 V

100

current (V_DS= 0)

V_GS(th)Gate threshold voltage

V_DS= V_GS, I_D= 250µA

V_GS= 10 V, I_D= 0.5 A

V_GS= 5 V, I_D= 0.5 A

2.5

0.30

0.35

0.40

0.45

Ω

Static drain-source ON

R_DS(on)

resistance

Table 4.

Symbol

Dynamic

Parameter

Test conditions

Min. Typ. Max. Unit

g_fs

Forward transconductance V_DS= 15 V, I_D= 0.5 µA

Input capacitance

C_iss

C_oss

C_rss

345

Output capacitance

V_DS= 25 V, f = 1MHz, V_GS= 0

Reverse transfer

capacitance

t_r(on)

t_f

Turn-on time

Rise time

V_DD= 50 V, I_D= 0.5 A,

R_G= 4.7 Ω, V_GS= 10 V

Figure 12

t_d(off)

t_f

Turn-off delay time

Fall time

V_DD= 50 V, I_D= 0.5 A

R_G= 4.7Ω, V_GS= 5 V

Figure 12

Q_g

Q_gs

Q_gd

Total gate charge

Gate-source charge

Gate-drain charge

V_DD= 80 V, I_D= 1A,

V_GS= 5V

1.5

3.5

Figure 13

4/13

STQ1NE10L

Electrical characteristics

Min. Typ. Max Unit

Table 5.

Symbol

Source drain diode

Parameter

Test conditions

I_SD

Source-drain current

(1)

Source-drain current (pulsed)

Forward on voltage

I_SDM

(2)

I_SD=1A, V_GS=0

1.5

V_SD

t_rr

I_SD= 1A,

Reverse recovery time

Reverse recovery charge

Reverse recovery current

Q_rr

di/dt = 100A/µs,

V_DD=30V, T_J= 100°C

3.5

I_RRM

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration=300µs, duty cycle 1.5%

5/13

Electrical characteristics

STQ1NE10L

2.1

Electrical characteristics (curves)

Figure 1. Safe operating area

Figure 2. Thermal impedance

Figure 3. Output characteristics

Figure 4. Transfer characteristics

Figure 5. Transconductance

Figure 6. Static drain-source on resistance

6/13

STQ1NE10L

Electrical characteristics

Figure 7. Gate charge vs. gate-source voltage Figure 8. Capacitance variations

Figure 9. Normalized gate threshold voltage Figure 10. Normalized on resistance vs.

vs. temperature

temperature

Figure 11. Source-drain diode forward

characteristics

7/13

Test circuit

STQ1NE10L

Test circuit

Figure 12. Switching times test circuit for

resistive load

Figure 13. Gate charge test circuit

Figure 14. Test circuit for inductive load

switching and diode recovery times

Figure 15. Unclamped Inductive load test

circuit

Figure 16. Unclamped inductive waveform

8/13

STQ1NE10L

Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK®

packages. These packages have a Lead-free second level interconnect. The category of

second level interconnect is marked on the package and on the inner box label, in

compliance with JEDEC Standard JESD97. The maximum ratings related to soldering

conditions are also marked on the inner box label. ECOPACK is an ST trademark.

ECOPACK specifications are available at: www.st.com

9/13

Package mechanical data

STQ1NE10L

TO-92 MECHANICAL DATA

mm.

inch

TYP.

DIM.

MIN.

4.32

0.36

4.45

3.30

2.41

1.14

12.70

2.16

0.92

0.41

TYP

MAX.

4.95

0.51

4.95

3.94

2.67

1.40

15.49

2.41

1.52

0.56

MIN.

0.170

0.014

0.175

0.130

0.094

0.044

0.50

MAX.

0.194

0.020

0.194

0.155

0.105

0.055

0.610

0.094

0.060

0.022

0.085

0.036

0.016

5°

10/13

STQ1NE10L

Package mechanical data

11/13

Revision history

STQ1NE10L

Revision history

Table 6.

Date

Revision history

Revision

Changes

21-Jun-2004

31-Oct-2006

31-Jan-2007

Complete version

Document has been reformatted

Typo mistake on Table 1.

12/13

STQ1NE10L

Please Read Carefully:

Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the

right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any

time, without notice.

All ST products are sold pursuant to ST’s terms and conditions of sale.

Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no

liability whatsoever relating to the choice, selection or use of the ST products and services described herein.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this

document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products

or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such

third party products or services or any intellectual property contained therein.

UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED

WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED

WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS

OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.

UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT

RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING

APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,

DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE

GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.

Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void

any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any

liability of ST.

ST and the ST logo are trademarks or registered trademarks of ST in various countries.

Information in this document supersedes and replaces all information previously supplied.

The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.

STMicroelectronics group of companies

Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -

Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America

www.st.com

13/13

相关型号：