STRH100N10FSY2 [STMICROELECTRONICS]
72A, 100V, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, HERMETIC SEALED PACKAGE-3;
| 型号： | STRH100N10FSY2 |
| 厂家： | 
ST |
| 描述： | 72A, 100V, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, HERMETIC SEALED PACKAGE-3 局域网 开关 脉冲 晶体管 |
| 文件： | 总9页 (文件大小：211K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STRH100N10FSY3
N-channel 100V - 0.024Ω - TO-254AA
Rad-hard low gate charge STripFET™ Power MOSFET
PRELIMINARY DATA
General features
Type
VDSS
STRH100N10FSY3
100V
■ Exceptional dv/dt capability
■ 100% avalanche tested
3
■ Application oriented characterization
■ Hermetically sealed
2
1
TO-254AA
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to improve immunity to
space effect. It is therefore suitable as power
switch in mainly high-efficiency DC-DC
Internal schematic diagram
converters. It is also intended for any application
with low gate charge drive requirements.
Applications
■ Satellite
■ High reliability
Order codes
Part number
Marking
Package
Packaging
STRH100N10FSY1 (1)
STRH100N10FSY2 (2)
STRH100N10FSY3 (3)
RH100N10FSY1
RH100N10FSY2
RH100N10FSY3
TO-254AA
TO-254AA
TO-254AA
Individual strip pack
Individual strip pack
Individual strip pack
1. Mil temp range
2. Mil temp range + burn in
3. Space flights parts (full ESA flow screening)
July 2006
Rev 1
1/9
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
www.st.com
9
Electrical ratings
STRH100N10FSY3
1
Electrical ratings
Table 1.
Symbol
Absolute maximum ratings (pre-irradiation)
Parameter
Value
Unit
VDS
VGS
Drain-source voltage (VGS = 0)
100
V
Gate-source voltage
14
72
V
A
(1)
ID
Drain current (continuous) at TC= 25°C
Drain current (continuous) at TC= 100°C
Drain current (pulsed)
(1)
ID
52
A
(2)
IDM
288
A
(1)
PTOT
Total dissipation at TC= 25°C
Peak diode recovery voltage slope
Storage temperature
288
W
dv/dt (3)
Tstg
3.7
V/ns
°C
°C
–55 to 175
175
Tj
Max. operating junction temperature
1. Rated according to the Rthj-case
2. Pulse width limited by safe operating area
3. ISD < 80A, di/dt < 1100A/µs, VDD = 80%V(BR)DSS
Table 2.
Symbol
Thermal data
Parameter
Value
Unit
Rthj-case Thermal resistance junction-case max
Rthc-s Case-to-sink typ
Rthj-amb Thermal resistance junction -amb max
0.52
0.21
48
°C/W
°C/W
°C/W
Table 3.
Symbol
Avalanche characteristics
Parameter
Value
Unit
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
IAR
40
A
Single pulse avalanche energy
EAS
EAR
3810
53
mJ
mJ
(starting Tj=25°C, ID=IAR, VDD=50V)
Repetitive avalanche
2/9
STRH100N10FSY3
Electrical characteristics
2
Electrical characteristics
(T
= 25°C unless otherwise specified)
CASE
2.1
Pre-irradiation
Table 4.
Symbol
On/off states
Parameter
Test condictions
80% BVDss
Min.
Typ. Max. Unit
Zero gate voltage drain
current (VGS = 0)
IDSS
10
µA
Gate body leakage current
(VDS = 0)
IGSS
VGS = 14V
±100
nA
Drain-to-source breakdown VGS = 0V, ID = 1mA
voltage
100
V
BVDSS
VGS(th)
VDS = VGS, ID = 1mA
Gate threshold voltage
2
4.5
V
V
GS = 12V
Static drain-source on
resistance
RDS(on)
0.024
Ω
ID = 36A
Table 5.
Symbol
Dynamic
Parameter
Test condictions
Min.
Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VGS = 0V, VDS = 25V,
f=1MHz
6600
710
210
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-to-source charge
Gate-to-drain (“Miller”)
charge
VDD = 50V, ID = 36A,
VGS=12V
180
25.4
46.2
nC
nC
nC
f=1MHz Gate DC Bias=0
Test signal level=20mV
open drain
RG
Gate input resistance
2
Ω
Table 6.
Symbol
Switching times
Parameter
Test conditions
Min. Typ.
Max
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
37
60
ns
ns
ns
ns
VDD = 50V, ID = 40A,
Turn-off-delay time
Fall time
RG = 4.7Ω, VGS = 12V
115
58
3/9
Electrical characteristics
STRH100N10FSY3
Table 7.
Symbol
Source drain diode
Parameter
Test Conditions
Min. Typ. Max Unit
ISD
Source-drain current
72
A
A
(1)
ISDM
Source-drain current (pulsed)
288
(2)
VSD
trr
Forward on voltage
ISD = 72A, VGS = 0
1.1
V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
332
4.48
27
ns
µC
A
ISD = 72A, di/dt = 100A/µs
VDD= 50V, Tj = 25°C
Qrr
IRRM
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
380
5.62
29.6
ns
µC
A
ISD = 72A, di/dt = 100A/µs
VDD= 50V, Tj = 150°C
Qrr
IRRM
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
2.2
Radiation characteristics
(a)
(@Tj=25°C up to 100Krad
)
Table 8.
Symbol
On/off states
Parameter
Test condictions
80% BVDss
Min.
Typ. Max. Unit
Zero gate voltage drain
current (VGS = 0)
IDSS
10
µA
Gate body leakage current
(VDS = 0)
IGSS
VGS = 14V
±100
nA
Drain-to-source breakdown VGS = 0V, ID = 1mA
voltage
100
V
BVDSS
VGS(th)
VDS = VGS, ID = 1mA
Gate threshold voltage
2
4.5
V
V
GS = 12V
Static drain-source on
resistance
RDS(on)
0.024
Ω
ID = 36A
Table 9.
Single event effect
Let
Let
VDS(V) @VGS=0
Ion
Br
Energy (MeV)
(Mev/(mg/cm2))
range (µm)
37
230
32
100
a. According to ESCC 22900 specification, Co60 gamma rays, dose rags:0.1rad/sec.
4/9
STRH100N10FSY3
Electrical characteristics
2.3
Electrical characteristics (curves)
Figure 1.
Safe operating area
Figure 2.
Thermal impedance
Figure 3.
Output characteristics
Figure 4.
Transfer characteristics
Figure 5.
Gate charge vs gate-source voltage Figure 6.
Capacitance variations
5/9
Electrical characteristics
STRH100N10FSY3
Figure 7.
Normalized BV
vs temperature Figure 8.
Static drain-source on resistance
DSS
Figure 9.
Normalized gate threshold voltage Figure 10. Normalized on resistance vs
vs temperature temperature
Figure 11. Sorce drain-diode forward
characteristics
6/9
STRH100N10FSY3
Package mechanical data
3
Package mechanical data
TO-254 MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
13.59
13.59
20.07
6.32
1.02
3.53
16.89
MAX.
13.84
13.84
20.32
6.60
1.27
3.78
17.40
MIN.
0.535
0.535
0.790
0.249
0.040
0.139
0.665
MAX.
0.545
0.545
0.80
0.260
0.050
0.149
0.685
A
B
C
D
E
F
G
H
I
J
K
6.86
0.270
0.89
1.14
0.035
0.510
0.045
0.570
3.81
3.81
0.150
0.150
L
12.95
14.50
M
N
R1
R2
3.05
1.65
0.120
0.065
0.71
1.0
0.025
0.040
7/9
Revision history
STRH100N10FSY3
4
Revision history
Table 10. Revision history
Date
Revision
Changes
03-Jul-2006
1
First release
8/9
STRH100N10FSY3
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