STS05DTP03 [STMICROELECTRONICS]
5A, 30V, 2 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR, ROHS COMPLIANT, SOP-8;
| 型号： | STS05DTP03 |
| 厂家： | 
ST |
| 描述： | 5A, 30V, 2 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR, ROHS COMPLIANT, SOP-8 开关 光电二极管 晶体管 |
| 文件： | 总10页 (文件大小：218K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STS05DTP03
Dual NPN-PNP complementary bipolar transistor
Features
■ High gain
5
■ Low V
CE(sat)
8
■ Simplified circuit design
■ Reduced component count
4
1
Applications
■ Push-pull or Totem-Pole configuration
■ MOSFET and IGBT gate driving
■ Motor, relay and solenoid driving
SO-8
Figure 1.
Internal schematic diagram
Description
The STS05DTP03 is a hybrid dual NPN-PNP
complementary power bipolar transistor
manufactured by using the latest low voltage
planar technology. The STS05DTP03 is housed in
dual island SO-8 package with separated
terminals for higher assembly flexibility,
specifically recommended to used in Push-Pull
or Totem Pole configuration as post IGBTs and
MOSFETs driver.
Table 1.
Order code
STS05DTP03
Device summary
Marking
Package
SO-8
Packaging
S05DTP03
Tape and reel
March 2009
Rev 1
1/10
www.st.com
10
Electrical ratings
STS05DTP03
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
NPN
PNP
VCBO
VCEO
VEBO
IC
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage (IC = 0)
Collector current
45
30
6
-45
-30
-6
V
V
V
5
-5
A
ICM
Collector peak current (tP < 5 ms)
Base current
10
1
-10
-1
A
IB
A
IBM
Base peak current (tP < 1 ms)
Total dissipation at Tamb = 25 °C single operation
Total dissipation at Tamb = 25 °C couple operation
Storage temperature
2
-2
A
PTOT
PTOT
Tstg
TJ
2
W
W
1.6
-65 to 150
150
°C
Max. operating junction temperature
Table 3.
Symbol
Thermal data
Parameter
Value
Unit
(1)
Rthj-amb
Thermal resistance junction-ambient (single operation)
Thermal resistance junction-ambient (dual operation)
62.5
78
°C/W
°C/W
(1)
Rthj-amb
1. When mounted on 1inch2 pa2oz. copper, t < 10 sec
2/10
STS05DTP03
Electrical characteristics
2
Electrical characteristics
(T
= 25 °C; unless otherwise specified)
CASE
Table 4.
Q1-NPN electrical characteristics
Parameter
Symbol
Test conditions
Min.
Typ.
Max.
Unit
Collector cut-off current
ICBO
V
V
V
CB = 30 V
10
µA
(IE = 0)
Collector cut-off current
(IB = 0)
ICEO
CE = 30 V
1
µA
µA
V
Emitter cut-off current
(IB = 0)
IEBO
EB = 6 V
10
Collector-emitter breakdown
voltage (IB = 0)
(1)
V(BR)CEO
IC = 10 mA
30
IC = 1 A
IC = 3 A
IC = 5 A
IB = 10 mA
IB = 100 mA
IB = 250 mA
0.25
0.7
V
V
V
Collector-emitter saturation
voltage
(1)
(1)
VCE(sat)
0.7
Base-emitter saturation
voltage
VBE(sat)
IC = 1 A
IB 10 mA
1.0
V
100
100
80
300
IC = 1 A
IC = 3 A
IC = 5 A
IC = 10 A
VCE = 2 V
VCE = 2 V
VCE = 2 V
VCE = 2 V
140
100
40
(1)
hFE
DC current gain
1. Pulsed duration = 300 µs, duty cycle ≤1.5 %
3/10
Electrical characteristics
STS05DTP03
Table 5.
Symbol
Q2-PNP electrical characteristics
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Collector cut-off current
(IE = 0)
ICBO
VCB = -30 V
-10
µA
Collector cut-off current
(IB = 0)
ICEO
VCE = -30 V
VEB = -6 V
IC = -10 mA
-1
µA
µA
V
Emitter cut-off current
(IB = 0)
IEBO
-10
Collector-emitter breakdown
voltage (IB = 0)
(1)
V(BR)CEO
-30
IC = -1 A
IC = -3 A
IC = -5 A
IB = -10 mA
IB = -100 mA
IB = -250 mA
-0.25
-0.7
V
V
V
Collector-emitter saturation
voltage
(1)
(1)
VCE(sat)
-0.7
Base-emitter saturation
voltage
VBE(sat)
IC = -1 A
IB = -10 mA
-1.0
300
V
100
100
80
IC = -1 A
IC = -3 A
IC = -5 A
IC = -10 A
VCE = -2 V
VCE -2 V
E = -2 V
VCE = -2 V
140
100
40
(1)
hFE
DC current gain
1. Pulsed duration = 300 µs, duty cycle ≤1.5 %
4/10
STS05DTP03
Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 2.
DC current gain Q1 NPN transistor Figure 3.
DC current gain Q1 NPN transistor
Figure 4.
Collector-emitter saturation
voltage Q1 NPN transistor
Figure 5.
Base-emitter saturation voltage Q1
NPN transistor
Figure 6.
Switching time resistive load Q1
NPN transistor
Figure 7.
Switching time resistive load Q1
NPN transistor
5/10
Electrical characteristics
STS05DTP03
Figure 8.
DC current gain Q2 PNP transistor Figure 9.
DC current gain Q2 PNP transistor
Figure 10. Collector-emitter saturation
voltage Q2 PNP transistor
Figure 11. Base-emitter satation voltage
Q2 PNP transtor
Figure 12. Switchng time resistive load Q2
PNP transistor
Figure 13. Switching time resistive load Q2
PNP transistor
6/10
STS05DTP03
Package mechanical data
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and products status are available at: www.st.com.
ECOPACK is an ST trademark
7/10
Package mechanical data
STS05DTP03
SO-8 mechanical data
mm
Dim.
Min.
Typ.
Max.
A
A1
A2
b
1.75
0.25
0.10
1.25
0.28
0.17
4.80
5.80
3.80
0.48
0.23
5.00
6.20
4.00
c
D
4.90
6.00
3.90
1.27
E
E1
e
h
0.25
0.40
0.50
1.27
L
L1
k
1.04
0°
8°
ccc
0.10
0016023_D
8/10
STS05DTP03
Revision history
4
Revision history
Table 6.
Date
19-Mar-2009
Document revision history
Revision
Changes
1
First release
9/10
STS05DTP03
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