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STT3PF20V

更新时间：2024-09-18 02:00:26
品牌：STMICROELECTRONICS
描述：P-CHANNEL 20V - 0.14 ohm - 2.2A SOT23-6L 2.7-DRIVE STripFET⑩ II POWER MOSFET

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STT3PF20V 概述

P-CHANNEL 20V - 0.14 ohm - 2.2A SOT23-6L 2.7-DRIVE STripFET⑩ II POWER MOSFET P沟道20V - 0.14欧姆 - 2.2A SOT23-6L 2.7 -DRIVE STripFET⑩ II功率MOSFET 功率场效应晶体管

STT3PF20V 规格参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：SOT-23包装说明：SOT-23, 6 PIN
针数：6Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.81
Is Samacsys：N其他特性：LOW THRESHOLD
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：20 V
最大漏极电流 (Abs) (ID)：2.2 A最大漏极电流 (ID)：2.2 A
最大漏源导通电阻：0.25 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-G6JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：6工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：P-CHANNEL
最大功率耗散 (Abs)：1.6 W最大脉冲漏极电流 (IDM)：8.8 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Matte Tin (Sn)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

STT3PF20V 数据手册

通过下载STT3PF20V数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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STT3PF20V  
P-CHANNEL 20V - 0.14 - 2.2A SOT23-6L  
2.7-DRIVE STripFET™ II POWER MOSFET  
V
DSS  
R
I
D
TYPE  
DS(on)  
STT3PF20V  
■
■
■
TYPICAL R (on) = 0.14 (@4.5V)  
DS  
TYPICAL R (on) = 0.20 (@2.7V)  
DS  
ULTRA LOW THRESHOLD GATE DRIVE  
(2.7V)  
■
STANDARD OUTLINE FOR EASY  
AUTOMATED SURFACE MOUNT ASSEMBLY  
SOT23-6L  
DESCRIPTION  
This Power MOSFET is the latest development of  
STMicroelectronis unique "Single Feature Size™"  
strip-based process. The resulting transistor  
shows extremely high packing density for low on-  
resistance, rugged avalanche characteristics and  
less critical alignment steps therefore a remark-  
able manufacturing reproducibility.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
■
DC-DC CONVERTERS  
BATTERY MANAGEMENT IN NOMADIC  
EQUIPMENT  
■
■
CELLULAR  
MARKING  
STP2  
■
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
20  
Unit  
V
V
Drain-source Voltage (V = 0)  
DS  
GS  
V
Drain-gate Voltage (R = 20 k )  
20  
V
DGR  
GS  
V
Gate- source Voltage  
± 12  
2.2  
V
GS  
I
Drain Current (continuous) at T = 25°C  
A
D
C
I
Drain Current (continuous) at T = 100°C  
1.39  
8.8  
A
D
C
I
(
Drain Current (pulsed)  
A
DM  
P
Total Dissipation at T = 25°C  
1.6  
W
tot  
C
(
Pulse width limited by safe operating area.  
Note: P-CHANNEL MOSFET actual polarity of voltages and current  
has to be reversed  
October 2002  
1/8  
.
STT3PF20V  
THERMAL DATA  
Rthj-amb  
(*)Thermal Resistance Junction-ambient  
Max. Operating Junction Temperature  
Storage Temperature  
Max  
78  
°C/W  
°C  
°C  
T
-55 to 150  
-55 to 150  
j
T
stg  
(*) Mounted on a 1 inch pad of 2 oz. Cu in FR-4 board  
(**) Mounted on a minimum pad of 2 oz. Cu in FR-4 board  
ELECTRICAL CHARACTERISTICS (T  
= 25 °C unless otherwise specified)  
case  
OFF  
Symbol  
Parameter  
Drain-source  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
I
= 250 µA, V = 0  
20  
V
D
GS  
(BR)DSS  
V
Breakdown Voltage  
V
= Max Rating  
DS  
Zero Gate Voltage  
1
10  
µA  
µA  
I
I
DSS  
Drain Current (V = 0)  
V
DS  
= Max Rating T = 125°C  
GS  
C
Gate-body Leakage  
V
GS  
= ± 12 V  
±100  
nA  
GSS  
Current (V = 0)  
DS  
(*)  
ON  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
V
GS(th)  
V
= V  
I
= 250 µA  
Gate Threshold Voltage  
0.6  
V
DS  
GS  
D
V
V
= 4.5 V  
= 2.7 V  
I
= 1 A  
= 1 A  
Static Drain-source On  
Resistance  
0.14  
0.20  
0.20  
0.25  
R
GS  
D
DS(on)  
I
D
GS  
DYNAMIC  
Symbol  
Parameter  
Test Conditions  
=15 V = 1 A  
Min.  
Typ.  
Max.  
Unit  
(*)  
V
V
I
D
g
fs  
Forward Transconductance  
4
S
DS  
DS  
= 15V f = 1 MHz, V = 0  
C
Input Capacitance  
Output Capacitance  
Reverse Transfer  
Capacitance  
315  
87  
17  
pF  
pF  
pF  
GS  
iss  
C
oss  
C
rss  
2/8  
STT3PF20V  
3/8  
STT3PF20V  
4/8  
STT3PF20V  
5/8  
STT3PF20V  
6/8  
STT3PF20V  
SOT23-6L MECHANICAL DATA  
mm  
mils  
DIM.  
MIN.  
0.90  
0.00  
0.90  
0.25  
0.09  
2.80  
2.60  
1.50  
0.35  
TYP.  
MAX.  
1.45  
0.15  
1.30  
0.50  
0.20  
3.10  
3.00  
1.75  
0.55  
MIN.  
0.035  
0.000  
0.035  
0.010  
0.004  
0.110  
0.102  
0.059  
0.014  
TYP.  
MAX.  
0.057  
0.006  
0.051  
0.020  
0.008  
0.122  
0.118  
0.069  
0.022  
A
A1  
A2  
b
C
D
E
E1  
L
e
0.95  
1.90  
0.037  
0.075  
e1  
A A2  
L
e
b
c
A1  
E
e1  
D
E1  
7/8  
STT3PF20V  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted  
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject  
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not  
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
The ST logo is registered trademark of STMicroelectronics  
2002 STMicroelectronics - All Rights Reserved  
All other names are the property of their respective owners.  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco -  
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.  
http://www.st.com  
8/8  

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