STT5NF30L [STMICROELECTRONICS]
N-CHANNEL 30V - 0.039W - 4A SOT23-6L STripFET II POWER MOSFET; N沟道30V - 0.039W - 4A SOT23-6L的STripFET II功率MOSFET
| 型号： | STT5NF30L |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 30V - 0.039W - 4A SOT23-6L STripFET II POWER MOSFET |
| 文件： | 总8页 (文件大小：258K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STT5NF30L
N-CHANNEL 30V - 0.039Ω - 4A SOT23-6L
STripFET™II POWER MOSFET
TYPE
V
R
I
D
DSS
DS(on)
STT5NF30L
30 V
< 0.050 Ω (@ 10V)
4 A
TYPICAL R (on) = 0.039Ω @10V
DS
LOW Q
g
LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the second generation of
STMicroelectronics unique “Single Feature Size™”
strip-based process. The resulting transistor shows
extremely high packing density for low on-resis-
tance, rugged avalanche characteristics and less
critical alignment steps therefore a remarkable man-
ufacturing reproducibility.
SOT23-6L
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
DC-DC CONVERTERS
POWER MANAGEMENT IN PORTABLE/
DESKTOP PCs
SYNCHRONOUS RECTIFICATION
DC MOTOR CONTROL (DISK DRIVERS, etc)
ORDERING INFORMATION
SALES TYPE
MARKING
PACKAGE
SOT23-6L
PACKAGING
STT5NF30L
STFN
TAPE & REEL
March 2003
1/8
STT5NF30L
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
30
Unit
V
V
DS
Drain-source Voltage (V = 0)
GS
V
Drain-gate Voltage (R = 20 kΩ)
30
V
DGR
GS
V
Gate- source Voltage
± 16
4
V
GS
I
Drain Current (continuous) at T = 25°C
A
D
C
I
Drain Current (continuous) at T = 100°C
2.5
16
A
D
C
I
( )
Drain Current (pulsed)
A
DM
P
Total Dissipation at T = 25°C
1.6
50
W
mJ
TOT
C
E
AS
(1)
Single Pulse Avalanche Energy
(•)Pulse width limited by safe operating area
(1) Starting T =25°C, I = 2 A, V = 15V
j
d
DD
.
THERMAL DATA
Rthj-amb
Thermal Resistance Junction-ambient
Max. Operating Junction Temperature
Storage Temperature
Max
78
°C/W
°C
T
l
- 55 to 150
- 55 to 150
T
stg
°C
ON/OFF
Symbol
Parameter
Test Conditions
Min.
30
Typ.
Max.
Unit
V
Drain-source
I
= 250 µA, V = 0
V
(BR)DSS
D
GS
Breakdown Voltage
I
Zero Gate Voltage
V
V
V
= Max Rating
DS
1
µA
µA
µA
DSS
Drain Current (V = 0)
GS
= Max Rating, T = 125°C
10
DS
GS
C
I
Gate-body Leakage
= ± 16V
±100
GSS
Current (V = 0)
DS
V
V
= V , I = 250 µA
V
Gate Threshold Voltage
1
GS(th)
DS
GS
D
R
Static Drain-source On
Resistance
V
V
= 10 V, I = 2 A
0.039
0.046
0.050
0.060
Ω
Ω
DS(on)
GS
GS
D
= 5 V, I = 2 A
D
2/8
STT5NF30L
ELECTRICAL CHARACTERISTICS (T
= 25 °C UNLESS OTHERWISE SPECIFIED)
CASE
DYNAMIC
Symbol
Parameter
Test Conditions
= 10 V = 2 A
Min.
Typ.
Max.
Unit
g
(1)
Forward Transconductance
V
I
, D
3
S
fs
DS
C
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
= 25 V, f = 1 MHz, V = 0
330
90
40
pF
pF
pF
iss
DS
GS
C
oss
C
rss
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
Turn-on Delay Time
Rise Time
V
R
= 15 V, I = 2 A
= 4.7Ω V = 4.5 V
GS
11
100
ns
ns
d(on)
DD
D
t
r
G
(see test circuit, Figure 3)
Q
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
V
= 24 V, I = 4 A,
= 5 V
6.5
3.6
2
9
nC
nC
nC
g
DD
GS
D
Q
gs
gd
Q
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Min.
Typ.
Max.
Unit
t
Turn-Off Delay Time
Fall Time
V
DD
= 15 V, I = 2 A,
25
22
ns
ns
d(off)
D
t
f
R = 4.7Ω, V = 4.5 V
G GS
(see test circuit, Figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Typ.
Max.
Unit
I
Source-drain Current
Source-drain Current (pulsed)
4
16
A
A
SD
(2)
I
SDM
V
(1)
I
I
= 4 A, V = 0
Forward On Voltage
1.2
V
SD
SD
SD
GS
t
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
= 4 A, di/dt = 100 A/µs,
= 20 V, T = 150°C
35
25
14
ns
nC
A
rr
Q
V
DD
rr
RRM
j
I
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3/8
STT5NF30L
Safe Operating Area
Thermal Impedence Junction-PCB
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
4/8
STT5NF30L
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
STT5NF30L
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8
STT5NF30L
SOT23-6L MECHANICAL DATA
mm
mils
DIM.
MIN.
0.90
0.00
0.90
0.25
0.09
2.80
2.60
1.50
0.35
TYP.
MAX.
1.45
0.15
1.30
0.50
0.20
3.10
3.00
1.75
0.55
MIN.
0.035
0.000
0.035
0.010
0.004
0.110
0.102
0.059
0.014
TYP.
MAX.
0.057
0.006
0.051
0.020
0.008
0.122
0.118
0.069
0.022
A
A1
A2
b
C
D
E
E1
L
e
0.95
1.90
0.037
0.075
e1
A
A2
L
e
b
c
A1
E
e1
D
E1
7/8
STT5NF30L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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© 2003 STMicroelectronics - Printed in Italy - All Rights Reserved
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