STTA106U [STMICROELECTRONICS]

TURBOSWITCH a ULTRA-FAST HIGH VOLTAGE DIODE; TURBOSWITCH一个超快速高压二极管
STTA106U
型号: STTA106U
厂家: ST    ST
描述:

TURBOSWITCH a ULTRA-FAST HIGH VOLTAGE DIODE
TURBOSWITCH一个超快速高压二极管

整流二极管 光电二极管 高压 PC
文件: 总8页 (文件大小:100K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
STTA106/U  
®
TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE  
MAIN PRODUCT CHARACTERISTICS  
IF(AV)  
VRRM  
1A  
600V  
20ns  
1.5V  
trr (typ)  
VF (max)  
FEATURES AND BENEFITS  
SPECIFIC TO FREEWHEEL MODE  
OPERATIONS : FREEWHEEL OR BOOSTER  
DIODE  
ULTRA-FAST AND SOFT RECOVERY  
VERY LOW OVERALL POWER LOSSES IN  
BOTH THE DIODE AND THE COMPANION  
TRANSISTOR  
SMB  
STTA106U  
F126  
STTA106  
HIGH FREQUENCY OPERATIONS  
DESCRIPTION  
The TURBOSWITCH is a very high performance  
series of ultra-fast high voltage power diodes.  
TURBOSWITCH family drastically cuts losses in  
both the diode and the associated switching IGBT  
and MOSFET in all freewheel mode operations  
and is particulary suitable and efficient in motor  
control freewheel applications and in booster diode  
applications in power factor control circuitries.  
Available either in SMB or F126 axial package,  
these 600V devices are particularly intended for  
use on 240V domestic mains.  
ABSOLUTE RATINGS (limiting values)  
Symbol  
VRRM  
Parameter  
Value  
600  
6
Unit  
V
Repetitive peak reverse voltage  
RMS forward current  
IF(RMS)  
IFRM  
A
Repetitive peak forward current  
tp = 5 µs  
10  
A
F = 5kHz square  
IFSM  
Tj  
Surge non repetitive forward current  
Maximum operating junction temperature  
Storage temperature range  
tp = 10 ms sinusoidal  
25  
125  
A
°C  
°C  
Tstg  
- 65 to + 150  
TM : TURBOSWITCH is a trademark of STMicroelectronics  
November 1999 - Ed: 5C  
1/8  
STTA106/U  
THERMAL AND POWER DATA  
Symbol  
Parameter  
Test conditions  
Value  
23  
Unit  
°C/W  
°C/W  
W
Rth(j-I)  
Junction to lead  
SMB  
F126  
SMB  
Junction to lead L=5mm  
45  
P1  
Conduction power  
dissipation  
IF(AV) = 0.8A = 0.5  
1.4  
δ
Tlead= 93°C  
I
F(AV) = 0.8A = 0.5  
F126  
1.4  
W
δ
Tlead= 60°C  
Tlead= 90°C  
Tlead= 60°C  
Pmax  
Total power dissipation  
Pmax = P1 + P3  
(P3 = 10% P1)  
SMB  
F126  
1.5  
1.5  
W
W
STATIC ELECTRICAL CHARACTERISTICS  
Symbol  
Parameter  
Test conditions  
Min  
Typ  
1.1  
Max  
Unit  
VF *  
Forward voltage drop  
IF = 1A  
Tj = 25°C  
1.75  
1.5  
V
Tj = 125°C  
IR **  
Reverse leakage current VR = 0.8 x  
VRRM  
Tj = 25°C  
Tj = 125°C  
10  
750  
A
µ
250  
Vto  
Rd  
Threshold voltage  
Dynamic resistance  
Ip < 3.IF(AV) Tj = 125°C  
1.15  
350  
V
m
Test pulse :  
* tp = 380 s, < 2%  
µ δ  
** tp = 5 ms, < 2%  
δ
To evaluate the maximum conduction losses use the following equation :  
2
P = Vto x IF(AV) + Rd x IF (RMS)  
DYNAMIC ELECTRICAL CHARACTERISTICS  
TURN-OFF SWITCHING  
Symbol  
Parameter  
Reverse  
recovery time  
Test conditions  
Tj = 25°C  
IF = 0.5 A IR = 1A  
I = 1 A dI /dt =-50A/ s V = 30V  
Min  
Typ  
Max  
Unit  
trr  
ns  
Irr = 0.25A  
20  
50  
µ
F
F
R
IRM  
Maximum  
recovery current dI /dt = -8 A/ s  
Tj = 125°C VR = 400V IF = 1A  
A
/
0.6  
µ
F
dI /dt = -50 A/ s  
1.6  
1.1  
µ
F
S factor  
Softness factor  
Tj = 125°C VR = 400V IF =1A  
dI /dt = -50 A/ s  
µ
F
TURN-ON SWITCHING  
Symbol  
Parameter  
Test conditions  
Tj = 25°C  
I = 1 A, dI /dt = 8 A/ s  
Min  
Typ  
Max  
Unit  
tfr  
Forward  
recovery time  
500  
ns  
µ
F
F
measured at 1.1 VF max  
×
VFp  
Peak forward  
voltage  
10  
V
2/8  
STTA106/U  
Fig. 2: Forward voltage drop versus forward cur-  
rent (maximum values).  
Fig. 1: Conduction losses versus average current.  
P1(W)  
IFM(A)  
1.8  
1E+1  
δ = 0.2  
δ = 0.5  
δ = 0.1  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
δ = 0.05  
Tj=125°C  
δ = 1  
1E+0  
Tj=25°C  
1E-1  
IF(av) (A)  
VFM(V)  
1E-2  
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
Fig. 3: Peak reverse recovery current versus dIF/dt  
(90% confidence).  
Fig. 4: Reverse recovery time versus dIF/dt (90%  
confidence).  
IRM(A)  
trr(ns)  
8
225  
VR=400V  
VR=400V  
200  
175  
150  
125  
100  
75  
7
Tj=125°C  
Tj=125°C  
IF=2*IF(av)  
6
5
4
IF=2*IF(av)  
IF=IF(av)  
IF=IF(av)  
3
2
50  
1
25  
dIF/dt(A/µs)  
dIF/dt(A/µs)  
20 40 60 80 100 120 140 160 180 200  
0
0
0
0
50  
100  
150  
200  
Fig. 5: Softness factor (tb/ta) versus dIF/dt (typical  
values).  
Fig. 6: Relative variation of dynamic parameters  
versus junction temperature (reference Tj = 125°C).  
S factor  
1.1  
1.6  
IF=2*IF(av)  
VR=400V  
Tj=125°C  
1.0  
1.4  
S factor  
1.2  
1.0  
0.8  
0.9  
IRM  
0.8  
Tj(°C)  
dIF/dt(A/µs)  
0.7  
0.6  
25  
50  
75  
100  
125  
0
10 20 30 40 50 60 70 80 90 100  
3/8  
STTA106/U  
Fig. 7: Transient peak forward voltage versus  
dIF/dt (90% confidence).  
Fig. 8: Forward recovery time versus dIF/dt (90%  
confidence).  
VFP(V)  
tfr(ns)  
40  
550  
IF=2A  
IF=2A  
VFR=1.1*VF max.  
Tj=125°C  
35  
500  
Tj=125°C  
450  
30  
25  
20  
15  
10  
400  
350  
300  
250  
200  
150  
100  
5
dIF/dt(A/µs)  
50  
0
dIF/dt(A/µs)  
0
0
20 40 60 80 100 120 140 160 180 200  
0
20 40 60 80 100 120 140 160 180 200  
Fig. 9: Junction capacitance versus reverse volt-  
age applied (typical values).  
C(pF)  
10  
F=1MHz  
5
2
VR(V)  
1
1
10  
100 200  
4/8  
STTA106/U  
APPLICATION DATA  
TM  
The TURBOSWITCH  
is especially designed to  
The way of calculating the power losses is given  
below :  
provide the lowest overall power losses in any  
"Freewhell Mode" application (see fig. A)  
considering both diode and companion transistor,  
thus optimizing the overall performance in the end  
application.  
TOTAL LOSSES  
due to the diode  
P = P1+ P2+ P3+ P4+ P5 Watts  
SWITCHING  
LOSSES  
SWITCHING  
LOSSES  
CONDUCTION  
LOSSES  
REVERSE  
LOSSES  
in the transistor  
due to the diode  
in the diode  
in the diode  
in the diode  
Fig. A : "FREEWHEEL" MODE  
SWITCHING  
TRANSISTOR  
IL  
DIODE:  
TURBOSWITCH  
V
R
tp  
T
F = 1/T  
δ = tp/T  
LOAD  
5/8  
STTA106/U  
APPLICATION DATA (Cont’d)  
Fig. B : STATIC CHARACTERISTICS  
I
Conduction losses :  
P1 = V x I + R x I  
F (RMS)  
2
to F(AV)  
d
I
F
Rd  
V
R
V
V
V
to  
F
Reverse losses :  
I
R
P2 = V x I  
)
δ
R x (1 -  
R
Fig. C : TURN-OFF CHARACTERISTICS  
Turn-on losses :  
(in the transistor, due to the diode)  
V
IL  
2
VR  
IRM  
3 2 S)  
× ( + ×  
F
×
×
TRANSISTOR  
t
P5 =  
6 x dIF dt  
I
VR  
IRM  
I
S
2
F
×
×
×
L × ( + ) ×  
+
2
dI dt  
F
I
dI /dt  
F
DIODE  
ta tb  
V
t
dI /dt  
R
I
RM  
VR  
trr = ta + tb  
S = tb / ta  
I
Turn-off losses (in the diode) :  
RECTIFIER  
OPERATION  
dIF /dt = VR /L  
ta tb  
2
VR  
IRM  
S
F
×
×
×
P3 =  
6 x dI dt  
F
V
t
dI /dt  
R
IRM  
P3 and P5 are suitable for power MOSFET and  
IGBT  
VR  
trr = ta + tb  
S = tb/ta  
6/8  
STTA106/U  
APPLICATION DATA (Cont’d)  
Fig. D : TURN-ON CHARACTERISTICS  
I
F
I
Fmax  
dI /dt  
F
Turn-on losses :  
P4 = 0.4 (V - V ) x I x t x F  
Fmax fr  
FP  
F
0
t
V
F
V
Fp  
V
F
1.1V  
F
0
t
tfr  
PACKAGE MECHANICAL DATA  
SMB  
E1  
DIMENSIONS  
Millimeters Inches  
Min. Max.  
REF.  
Min.  
1.90  
0.05  
1.95  
0.15  
5.10  
4.05  
3.30  
0.75  
Max.  
2.45  
0.20  
2.20  
0.41  
5.60  
4.60  
3.95  
1.60  
D
A1  
A2  
b
0.075 0.096  
0.002 0.008  
0.077 0.087  
0.006 0.016  
0.201 0.220  
0.159 0.181  
0.130 0.156  
0.030 0.063  
E
c
E
A1  
E1  
D
A2  
C
L
b
L
FOOTPRINT DIMENSIONS (in millimeters)  
2.3  
1.52  
2.75  
1.52  
7/8  
STTA106/U  
PACKAGE MECHANICAL DATA  
F126  
DIMENSIONS  
Millimeters Inches  
C
C
A
REF.  
Min. Typ. Max. Min. Typ. Max.  
A
B
C
D
6.05 6.20 6.35 0.238 0.244 0.250  
2.95 3.00 3.05 0.116 0.118 0.120  
D
D
B
26  
31 1.024  
1.220  
0.76 0.81 0.86 0.030 0.032 0.034  
MARKING  
Type  
Marking  
T01  
Package  
SMB  
Weight  
0.11g  
0.39g  
0.39g  
Base Qty  
2500  
Delivery mode  
tape & reel  
box  
STTA106U  
STTA106  
STTA106  
STTA106  
F126  
1000  
STTA106RL  
F126  
6000  
tape & reel  
Band indicates cathode  
Epoxy meets UL94,V0  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of  
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by  
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to  
change without notice. This publication supersedes and replaces all information previously supplied.  
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-  
proval of STMicroelectronics.  
The ST logo is a registered trademark of STMicroelectronics  
© 1999 STMicroelectronics - Printed in Italy - All rights reserved.  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia  
Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.  
http://www.st.com  
8/8  

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