STTH10002TV1 [STMICROELECTRONICS]

Ultrafast recovery diode; 超快恢复二极管


型号：	STTH10002TV1
厂家：	ST
描述：	Ultrafast recovery diode 超快恢复二极管二极管快恢复二极管超快恢复二极管
文件：	总8页 (文件大小：110K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

STTH10002

Ultrafast recovery diode

Main product characteristics

I_F(AV)

V_RRM

2 x 50 A

200 V

T_j(max)

V_F(typ)

t_rr(typ)

150° C

0.72 V

30 ns

A1 K1

Features and benefits

A2 K2

■ Very low forward losses

■ Low recovery time

■ High surge current capability

■ Insulated

– Insulating voltage = 2500 V_rms

– Capacitance = 45 pF

ISOTOP

STTH10002TV1

ISOTOP

STTH10002TV2

Description

The STTH10002 is a dual rectifier suited for

welding equipment, and high power industrial

applications.

Packaged in ISOTOP, this device is intended for

use in the secondary rectification of power

converters.

Order codes

Part Number

Marking

STTH10002TV1

STTH10002TV2

STTH10002TV1

STTH10002TV2

April 2006

Rev 1

1/8

www.st.com

Characteristics

STTH10002

Characteristics

Table 1.

Symbol

Absolute ratings (limiting values at T_j= 25° C, unless otherwise specified)

Parameter Value

Unit

V_RRM

Repetitive peak reverse voltage

200

150

I_F(RMS)RMS forward current

Per diode

Per diode T_c= 100° C

Per device T_c= 95° C

t_p= 10 ms Sinusoidal

I_F(AV)

Average forward current, δ = 0.5

I_FSM

T_stg

T_j

Surge non repetitive forward current

Storage temperature range

750

-55 to + 175 ° C

Maximum operating junction temperature

150

° C

Table 2.

Thermal parameters

Symbol

R_th(j-c)

R_th(c)

Parameter

Value

Unit

Per diode

Total

Junction to case

Coupling

0.55

0.1

° C/W

When the two diodes 1 and 2 are used simultaneously:

∆Tj(diode 1) = P (diode 1) X R_th(j-c)(Per diode) + P (diode 2) x R_th(c)

Table 3.

Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

T_j= 25° C

500

(1)

I_R

Reverse leakage current

V_R= V_RRM

µA

T_j= 125° C

T_j= 25° C

T_j= 125° C

T_j= 150° C

I_F= 50 A

I_F= 100 A

I_F= 50 A

I_F= 100 A

1.15

1.0

(2)

0.90

0.72

0.86

V_F

Forward voltage drop

0.80

0.97

1. Pulse test: t = 5 ms, δ < 2 %

2. Pulse test: t = 380 µs, δ < 2 %

To evaluate the conduction losses use the following equation:

P = 0.63 x I_F(AV)+ 0.0034 I_{F (RMS)}

2/8

STTH10002

Characteristics

Table 4.

Symbol

Dynamic characteristics

Parameter

Test conditions

Min. Typ Max. Unit

I_F= 1 A, dI_F/dt = -50 A/µs,

V_R= 30 V, T_j= 25 °C

t_rr

Reverse recovery time

I_F= 1 A, dI_F/dt = -200 A/µs,

V_R= 30 V, T_j= 25 °C

I_F= 50 A, dI_F/dt = 200 A/µs,

V_R= 160 V, T_j= 125 °C

I_RM

t_fr

Reverse recovery current

Forward recovery time

I_F= 50 A, dI_F/dt = 200 A/µs

180

V_FR= 1.1 x V_Fmax, T_j= 25 °C

I_F= 50 A, dI_F/dt = 200 A/µs,

T_j= 25 °C

V_FP

Forward recovery voltage

1.6

Figure 1.

Peak current versus duty cycle

Figure 2.

Forward voltage drop versus

forward current (typical values, per

diode)

I_M(A)

600

I_FM(A)

300

250

200

150

100

I_M

500

400

300

200

100

=tp/T

δd

P = 100 W

P = 60 W

T_j=150°C

P = 30 W

T_j=25°C

V_FM(V)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

Figure 3.

Forward voltage drop versus

forward current (maximum values,

per diode)

Figure 4.

Relative variation of thermal

impedance, junction to case,

versus pulse duration

Z_th(j-c)/R_th(j-c)

I_FM(A)

300

1.0

Single pulse

ISOTOP

250

200

150

100

T_j=150°C

T_j=25°C

V_FM(V)

tp(s)

0.1

1.E-03

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.E-02

1.E-01

1.E+00

1.E+01

3/8

Characteristics

STTH10002

Figure 5.

Junction capacitance versus

reverse applied voltage (typical

values)

Figure 6.

Reverse recovery charges versus

dI_F/dt (typical values)

C(pF)

Q_RR(nC)

450

400

350

300

250

200

150

100

1000

F=1MHz

_osc=30mV_RMS

T_j=25°C

I_F= 50 A

_R=160 V

T_j=125 °C

T_j=25 °C

V_R(V)

dI_F/dt(A/µs)

100

1000

100

1000

Figure 7.

Reverse recovery time versus dI_F/dt Figure 8.

(typical values)

Peak reverse recovery current

versus dI_F/dt (typical values)

t_RR(ns)

I_RM(A)

120

110

100

I_F= 50 A

_R=160V

I_F= 50 A

V_R= 160 V

T_j=125 °C

T_j=25 °C

T_j=125 °C

T_j=25 °C

dI_F/dt(A/µs)

100

1000

100

1000

Figure 9.

Dynamic parameters versus

junction temperature

Q_RR; I_RM[T_j] / Q_RR; I_RM[T_j=125°C]

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

I_F= 50 A

_R=160V

I_RM

Q_RR

T_j(°C)

100

125

150

4/8

STTH10002

Ordering information scheme

STTH 100 02 TVx

Ultrafast switching diode

Average forward current

100 = 100 A

Repetitive peak reverse voltage

02 = 200 V

Package

TVx = ISOTOP

5/8

Package information

STTH10002

Package information

Table 5.

ISOTOP dimensions

DIMENSIONS

Millimeters Inches

REF.

Min.

Max.

Min.

Max.

11.80

8.90

12.20

9.10

0.465

0.350

0.307

0.030

0.077

1.488

1.240

0.990

0.939

0.480

0.358

0.323

0.033

0.081

1.504

1.248

1.004

0.951

7.8

8.20

0.75

0.85

1.95

2.05

37.80

31.50

25.15

23.85

38.20

31.70

25.50

24.15

24.80 typ.

0.976 typ.

14.90

12.60

3.50

15.10

12.80

4.30

0.587

0.496

0.138

0.161

0.181

0.157

1.185

0.594

0.504

0.169

0.197

0.69

4.10

4.30

ØP

4.60

5.00

4.00

4.30

4.00

4.40

0.173

1.193

30.10

30.30

In order to meet environmental requirements, ST offers these devices in ECOPACK®

packages. These packages have a lead-free second level interconnect. The category of

second level interconnect is marked on the package and on the inner box label, in

compliance with JEDEC Standard JESD97. The maximum ratings related to soldering

conditions are also marked on the inner box label. ECOPACK is an ST trademark.

ECOPACK specifications are available at: www.st.com.

6/8

STTH10002

Ordering information

Part Number

Marking

Package

Weight Base qty Delivery mode

STTH10002TV1

STTH10002TV2

STTH10002TV1

STTH10002TV2

ISOTOP

27 g

Tube

Revision history

Date

Revision

Description of Changes

05-Apr-2006

First issue

7/8

STTH10002

Please Read Carefully:

Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the

right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any

time, without notice.

All ST products are sold pursuant to ST’s terms and conditions of sale.

Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no

liability whatsoever relating to the choice, selection or use of the ST products and services described herein.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this

document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products

or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such

third party products or services or any intellectual property contained therein.

UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED

WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED

WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS

OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.

UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZE REPRESENTATIVE OF ST, ST PRODUCTS ARE NOT DESIGNED,

AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS,

NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR

SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE.

Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void

any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any

liability of ST.

ST and the ST logo are trademarks or registered trademarks of ST in various countries.

Information in this document supersedes and replaces all information previously supplied.

The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.

STMicroelectronics group of companies

Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -

Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America

www.st.com

8/8

STTH10002TV1 [STMICROELECTRONICS]

相关型号：

UL1042

ZXFV201

ZXFV201N14

ZXFV201N14TA

ZXFV201N14TC

ZXFV202E5

ZXFV202N8

ZXFV203N14

ZXFV301N16(1)

ZXFV302N16

ZXFV4089

ZXFV4089N8