STTH102RL [STMICROELECTRONICS]
HIGH EFFICIENCY ULTRAFAST DIODE; 高效率超快二极管
| 型号： | STTH102RL |
| 厂家： | 
ST |
| 描述： | HIGH EFFICIENCY ULTRAFAST DIODE |
| 文件： | 总5页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
®
STTH102
HIGH EFFICIENCY ULTRAFAST DIODE
MAIN PRODUCT CHARACTERISTICS
IF(AV)
1 A
VRRM
200 V
175 °C
0.78 V
20 ns
Tj (max)
VF (max)
trr (max)
FEATURES AND BENEFITS
■
■
■
■
Very low conduction losses
Negligible switching losses
Low forward and reverse recovery times
High junction temperature
DO-41
STTH102
DESCRIPTION
The STTH102, which is using ST's new 200V
planar technology, is specially suited for switching
mode base drive & transistor circuits.
The device is also intended for use as a free
wheeling diode in power supplies and other power
switching applications.
ABSOLUTE RATINGS (limiting values)
Symbol
VRRM
IF(AV)
IFSM
Parameter
Repetitive peak reverse voltage
Value
Unit
V
200
1
Average forward current
Tl = 130°C δ =0.5
tp = 10 ms Sinusoidal
A
Surge non repetitive forward current
Storage temperature range
50
A
Tstg
- 65 + 175
+ 175
°C
°C
Tj
Maximum operating junction temperature
THERMAL PARAMETERS
Symbol
Parameter
Maximum
50
Unit
Rth (j-a) Junction to ambient*
°C/W
* On infinite heatsink with 10mm length.
August 2001 - Ed: 2A
1/5
STTH102
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Tests conditions
Tj = 25°C VR = VRRM
Min. Typ. Max.
Unit
IR*
Reverse leakage current
1
µA
Tj = 125°C
Tj = 25°C
Tj = 125°C
1
25
VF**
Forward voltage drop
IF = 1A
0.97
0.78
V
0.68
Pulse test: * tp = 5ms, δ < 2%
** tp = 380µs, δ < 2%
To evaluate the maximum c2onduction losses use the following equation :
P = 0.65 x IF(AV) + 0.130 x IF (RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Tests conditions
IF = 0.5 A Irr = 0.25 A
Min.
Typ. Max. Unit
trr
Reverse recovery
time
Tj = 25°C
12
20
ns
ns
V
IR = 1A
tfr
Forward recovery
time
IF = 1 A dIF/dt = 50A/µs Tj = 25°C
VFR = 1.1 x VFmax
50
VFP
Forward recovery
voltage
Tj = 25°C
1.8
2/5
STTH102
Fig. 1: Average forward power dissipation versus
average forward current.
Fig. 2: Average forward current versus ambient
temperature (δ = 0.5).
PF(av)(W)
1.0
IF(av)(A)
1.2
δ = 0.1 δ = 0.2
δ = 0.5
δ = 0.05
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Rth(j-a)=Rth(j-l)
1.0
δ = 1
0.8
0.6
Rth(j-a)=110°C:W
0.4
T
0.2
Tamb(°C)
75 100
IF(av)(A)
tp
=tp/T
δ
0.0
0
25
50
125
150
175
0.00
0.25
0.50
0.75
1.00
1.25
Fig. 3: Thermal resistance versus lead length.
Fig. 4: Relative variation of thermal impedance
junction ambient versus pulse duration (Printed
circuit board epoxy FR4, LIeads = 10mm).
Zth(j-a)/Rth(j-a)
1.0
Rth(°C/W)
120
Rth(j-a)
110
0.9
0.8
0.7
100
90
80
0.6
70
δ = 0.5
Rth(j-l)
0.5
0.4
0.3
60
50
40
30
20
δ = 0.2
T
0.2
δ = 0.1
0.1
10
Single pulse
Lleads(mm)
tp(s)
tp
1.E+03
=tp/T
δ
0
0.0
1.E-01
5
10
15
20
25
1.E+00
1.E+01
1.E+02
Fig. 5: Forward voltage drop versus forward
current.
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values).
IFM(A)
100.0
C(pF)
100
F=1MHz
Vosc=30mV
Tj=25°C
Tj=125°C
(Maximum values)
10.0
Tj=25°C
(Maximum values)
Tj=125°C
(Typical values)
10
1.0
0.1
VR(V)
VFM(V)
1
0.0
0.2 0.4
0.6 0.8
1.0 1.2
1.4 1.6
1.8 2.0
2.2 2.4
1
10
100
1000
3/5
STTH102
Fig. 7: Reverse recovery time versus dIF/dt
(90% confidence).
Fig. 8: Peak reverse recovery current versus
dIF/dt (90% confidence).
trr(ns)
70
IRM(A)
3.5
IF=1A
VR=100V
Tj=125°C
IF=1A
VR=100V
Tj=125°C
60
3.0
2.5
2.0
1.5
1.0
0.5
0.0
50
Tj=125°C
40
Tj=125°C
30
Tj=25°C
Tj=25°C
20
10
dIF/dt(A/µs)
dIF/dt(A/µs)
100
0
1
10
100
1000
1
10
1000
Fig. 9: Relative variations of dynamic parameters
versus junction temperature.
IRM; trr; Qrr[Tj]/IRM; trr; Qrr[Tj=25°C]
3.5
IF=1A
dIF/dt=200A/µs
VR=100V
3.0
Qrr
2.5
2.0
trr
1.5
IRM
Tj(°C)
1.0
25
50
75
100
125
150
175
4/5
STTH102
PACKAGE MECHANICAL DATA
DO-41
DIMENSIONS
Millimeters Inches
C
A
C
REF.
O/ B
Min.
Max.
Min.
Max.
A
B
C
D
4.1
5.20
0.160
0.205
2
2.71
0.080
1
0.107
0.034
O
/
D
O
/
D
25.4
0.712
0.863
0.028
Ordering code
STTH102
Marking
STTH102
STTH102
Package
DO-41
Weight
Base qty Delivery mode
0.34 g
0.34 g
2000
5000
Ammopack
Tape & reel
STTH102RL
DO-41
■
■
Cooling method: by conduction (method A)
Epoxy meets UL 94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 2001 STMicroelectronics - Printed in Italy - All rights reserved.
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