STTH112 [STMICROELECTRONICS]

HIGH VOLTAGE ULTRAFAST RECTIFIER; 高压超快整流器


型号：	STTH112
厂家：	ST
描述：	HIGH VOLTAGE ULTRAFAST RECTIFIER 高压超快整流器高压
文件：	总6页 (文件大小：63K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

STTH112/A/U

HIGH VOLTAGE ULTRAFAST RECTIFIER

MAIN PRODUCT CHARACTERISTICS

I_F(AV)

V_RRM

1 A

1200 V

175 °C

1.65 V

Tj (max)

V_F(max)

FEATURES AND BENEFITS

■

Low forward voltage drop

High reliability

High surge current capability

Soft switching for reduced EMI disturbances

Planar technology

DO-41

STTH112

DESCRIPTION

The STTH112, which is using ST ultrafast high

voltage planar technology, is specially suited for

free-wheeling, clamping, snubbering, demagneti-

zation in power supplies and other power switching

applications.

SMA

STTH112A

SMB

STTH112U

ABSOLUTE RATINGS (limiting values)

Symbol

Parameter

Repetitive peak reverse voltage

Value

1200

850

Unit

V_RRM

V_(RMS)RMS voltage

I_F(AV)Average forward current

Tl = 85°C δ =0.5

DO-41

SMA

Tl = 115°C δ =0.5

Tl = 125°C δ =0.5

SMB

I_FSM

Forward surge current t = 8.3 ms

Storage temperature range

DO-41

SMA

SMB

T_stg

- 50 + 175

+ 175

°C

Maximum operating junction temperature

January 2003 - Ed: 2

1/6

STTH112/A/U

THERMAL PARAMETERS

Symbol

Parameter

Value

Unit

R_{th (j-l)}

Junction to lead

L = 10 mm

DO-41

SMA

°C/W

SMB

R_{th (j-a)}Junction to ambient

L = 10 mm

DO-41

110

STATIC ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Tests conditions

Min. Typ. Max.

Unit

I_R

Reverse leakage current

V_R= 1200V

Tj = 25°C

Tj = 125°C

Tj = 25°C

Tj = 125°C

µA

1.9

V_F

Forward voltage drop

I_F= 1 A

1.17

1.65

To evaluate the maximum conduction losses use the following equation :

P = 1.35 x I_F(AV)+ 0.3 x I_{F (RMS)}

DYNAMIC ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Tests conditions

Min. Typ. Max. Unit

t_rr

Reverse recovery time

I_F= 0.5 A

Tj = 25°C

Irr = 0.25 A I_R= 1A

t_fr

Forward recovery time

I_F= 1 A

dI_F/dt = 50 A/µs

V_FR= 1.1 x V_Fmax

Tj = 25°C

500

V_FP

Forward recovery voltage

Fig. 1: Conduction losses versus average current.

Fig. 2: Forward voltage drop versus forward

current.

P(W)

(A)

2.2

100.0

10.0

1.0

δ = 0.2

δ = 0.1

δ = 0.5

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

δ = 0.05

T_j=125°C

(maximum values)

T_j=125°C

(typical values)

δ = 1

T_j=25°C

(maximum values)

(A)

F(AV)

(V)

1.1

=tp/T

1.0

0.1

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.2

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

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STTH112/A/U

Fig. 3-1: Relative variation of thermal impedance

junction ambient versus pulse duration (epoxy

FR4, L_leads= 10mm) (DO-41).

Fig. 3-2: Relative variation of thermal impedance

junction ambient versus pulse duration (epoxy

FR4) (SMA).

th(j-c) th(j-c)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

t (s)

1.E+03

Single pulse

1.E+03

=tp/T

1.E-01

1.E+00

1.E+01

1.E+02

1.E-01

1.E+00

1.E+01

1.E+02

Fig. 3-3: Relative variation of thermal impedance

junction ambient versus pulse duration (epoxy

FR4)(SMB).

th(j-c) th(j-c)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

δ = 0.5

δ = 0.2

δ = 0.1

t (s)

Single pulse

1.E+03

=tp/T

1.E-01

1.E+00

1.E+01

1.E+02

Fig. 4-1: Thermal resistance junction to ambient

versus copper surface under each lead (epoxy

printed circuit board FR4, copper thickness: 35µm)

(DO-41, SMB).

Fig. 4-2: Thermal resistance junction to ambient

versus copper surface under each lead (epoxy

printed circuit board FR4, copper thickness: 35µm)

(SMA).

R (°C/W)

th(j-a)

R (°C/W)

th(j-a)

140

110

100

130

120

110

100

DO-41

L_leads=10mm

SMB

SMA

S(cm²)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

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STTH112/A/U

PACKAGE MECHANICAL DATA

SMA

DIMENSIONS

Millimeters Inches

Min.

REF.

Min.

1.90

0.05

1.25

0.15

4.80

3.95

2.25

0.75

Max.

2.70

0.20

1.65

0.41

5.60

4.60

2.95

1.60

Max.

0.106

0.008

0.065

0.016

0.220

0.181

0.116

0.063

0.075

0.002

0.049

0.006

0.189

0.156

0.089

0.030

FOOTPRINT (in millimeters)

1.65

1.45

2.40

1.45

4/6

STTH112/A/U

PACKAGE MECHANICAL DATA

SMB

DIMENSIONS

Millimeters Inches

Min.

REF.

Min.

1.90

0.05

1.95

0.15

5.10

4.05

3.30

0.75

Max.

0.096

0.008

0.087

0.016

0.220

0.181

0.156

0.063

2.45

0.20

2.20

0.41

5.60

4.60

3.95

1.60

0.075

0.002

0.077

0.006

0.201

0.159

0.130

0.030

FOOTPRINT (in millimeters)

2.3

1.52

2.75

1.52

5/6

STTH112/A/U

PACKAGE MECHANICAL DATA

DO-41

DIMENSIONS

Millimeters Inches

REF.

O/ B

Min.

Max.

Min.

Max.

4.07

5.20

0.160

0.080

1.102

0.028

0.205

2.04

2.71

0.107

0.034

0.712

0.863

Ordering code

STTH112

Marking

STTH112

H12

Package

DO-41

SMA

Weight

Base qty Delivery mode

0.34 g

0.068 g

0.11 g

0.34 g

2000

5000

2500

5000

Ammopack

Tape & reel

STTH112A

STTH112U

STTH112RL

U12

SMB

STTH112

DO-41

■

Epoxy meets UL 94,V0

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of

use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by

implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to

change without notice. This publication supersedes and replaces all information previously supplied.

STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written

approval of STMicroelectronics.

The ST logo is a registered trademark of STMicroelectronics

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