STTH312B
更新时间：2024-09-18 06:37:41
描述：Ultrafast recovery - 1200 V diode
概述
规格参数
数据手册
替代型号STTH312B 概述
Ultrafast recovery - 1200 V diode 超快恢复 - 1200 V二极管 TVS二极管 整流二极管
STTH312B 规格参数
| 是否Rohs认证： | 符合 | 生命周期： | Obsolete |
| 零件包装代码： | DPAK | 包装说明： | PLASTIC, DPAK-3 |
| 针数： | 3 | Reach Compliance Code： | not_compliant |
| ECCN代码： | EAR99 | HTS代码： | 8541.10.00.80 |
| 风险等级： | 5.79 | Is Samacsys： | N |
| 其他特性： | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, HIGH RELIABILITY | 应用： | HIGH VOLTAGE ULTRA FAST SOFT RECOVERY |
| 外壳连接： | CATHODE | 配置： | SINGLE |
| 二极管元件材料： | SILICON | 二极管类型： | RECTIFIER DIODE |
| 最大正向电压 (VF)： | 1.65 V | JESD-30 代码： | R-PSSO-G2 |
| JESD-609代码： | e3 | 湿度敏感等级： | 1 |
| 最大非重复峰值正向电流： | 35 A | 元件数量： | 1 |
| 相数： | 1 | 端子数量： | 2 |
| 最高工作温度： | 175 °C | 最大输出电流： | 3 A |
| 封装主体材料： | PLASTIC/EPOXY | 封装形状： | RECTANGULAR |
| 封装形式： | SMALL OUTLINE | 峰值回流温度（摄氏度）： | 260 |
| 认证状态： | Not Qualified | 最大重复峰值反向电压： | 1200 V |
| 最大反向恢复时间： | 0.115 µs | 子类别： | Rectifier Diodes |
| 表面贴装： | YES | 端子面层： | Matte Tin (Sn) |
| 端子形式： | GULL WING | 端子位置： | SINGLE |
| 处于峰值回流温度下的最长时间： | 30 | Base Number Matches： | 1 |
STTH312B 数据手册
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PDF下载STTH312
Ultrafast recovery - 1200 V diode
Main product characteristics
A
K
IF(AV)
VRRM
Tj
3 A
1200 V
175° C
1.15 V
55 ns
VF (typ)
trr (typ)
K
A
Features and benefits
NC
DPAK
STTH312B
■ Ultrafast, soft recovery
■ Very low conduction and switching losses
■ High frequency and/or high pulsed current
operation
■ High reverse voltage capability
■ High junction temperature
Description
The high quality design of this diode has
produced a device with low leakage current,
regularly reproducible characteristics and intrinsic
ruggedness. These characteristics make it ideal
for heavy duty applications that demand long term
reliability.
Order codes
Part Number
Marking
STTH312B
STTH312B
STTH312B
STTH312B-TR
Such demanding applications include industrial
power supplies, motor control, and similar
mission-critical systems that require rectification
and freewheeling. These diodes also fit into
auxiliary functions such as snubber, bootstrap,
and demagnetization applications.
The improved performance in low leakage
current, and therefore thermal runaway guard
band, is an immediate competitive advantage for
this device.
March 2006
Rev 1
1/8
www.st.com
8
Characteristics
STTH312
1
Characteristics
Table 1.
Symbol
Absolute ratings (limiting values at 25° C, unless otherwise specified)
Parameter Value
Unit
VRRM
Repetitive peak reverse voltage
1200
V
A
IF(RMS) RMS forward current
6
IF(AV)
IFRM
IFSM
Tstg
Tj
Average forward current, δ = 0.5
Repetitive peak forward current
Tc = 150° C
tp = 5 µs, F = 5 kHz square
3
A
35
35
A
Surge non repetitive forward current
Storage temperature range
tp = 10 ms Sinusoidal
A
-65 to + 175
175
°C
°C
Maximum operating junction temperature
Table 2.
Thermal parameter
Symbol
Parameter
Junction to case
Value
Unit
Rth(j-c)
3.8
°C/W
Table 3.
Symbol
Static electrical characteristics
Parameter
Test conditions
Min.
Typ
Max.
Unit
Tj = 25° C
Tj = 125° C
10
100
2
(1)
IR
Reverse leakage current
VR = VRRM
µA
2
Tj = 25° C
Tj = 125° C
Tj = 150° C
(2)
VF
Forward voltage drop
IF = 3 A
1.20
1.15
1.7
1.65
V
1. Pulse test: t = 5 ms, δ < 2 %
p
2. Pulse test: t = 380 µs, δ < 2 %
p
2
To evaluate the conduction losses use the following equation: P = 1.4 x IF(AV) + 0.1 IF (RMS)
2/8
STTH312
Characteristics
Table 4.
Symbol
Dynamic characteristics
Parameter
Test conditions
Min. Typ Max. Unit
IF = 1 A, dIF/dt = -50 A/µs,
VR = 30 V, Tj = 25° C
115
ns
trr
Reverse recovery time
IF = 1 A, dIF/dt = -100 A/µs,
VR = 30 V, Tj = 25° C
55
9.5
2
80
IF = 3 A, dIF/dt = -200 A/µs,
VR = 600 V, Tj = 125° C
IRM
S
Reverse recovery current
Softness factor
14
A
IF = 3 A, dIF/dt = -200 A/µs,
VR = 600 V, Tj = 125° C
IF = 3 A
VFR = 1.5 x VFmax, Tj = 25° C
dIF/dt = 50 A/µs
tfr
Forward recovery time
350
ns
V
IF = 3 A, dIF/dt = 50 A/µs,
Tj = 25° C
VFP
Forward recovery voltage
12
Figure 1.
Conduction losses versus
average current
Figure 2.
Forward voltage drop versus
forward current
P(W)
I (A)
FM
7
50
45
40
35
30
25
20
15
10
5
δ = 0.2
δ = 0.5
δ = 0.1
6
5
4
3
2
1
Tj=150°C
(maximum values)
δ = 0.05
δ = 1
Tj=150°C
(typical values)
Tj=25°C
(maximum values)
T
I
(A)
V (V)
FM
F(AV)
tp
=tp/T
δ
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Figure 3.
Relative variation of thermal
impedance junction to case
versus pulse duration
Figure 4.
Peak reverse recovery current
versus dIF/dt (typical values)
I
(A)
Z
/R
RM
th(j-c) th(j-c)
24
22
20
18
16
14
12
10
8
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
VR=600V
Tj=125°C
IF=2 x IF(AV)
IF=IF(AV)
IF=0.5 x IF(AV)
Single pulse
6
4
2
t (s)
p
dI /dt(A/µs)
F
0
1.E-03
1.E-02
1.E-01
1.E+00
0
50
100
150
200
250
300
350
400
450
500
3/8
Characteristics
STTH312
Figure 5.
Reverse recovery time versus
Figure 6.
Reverse recovery charges versus
dIF/dt (typical values)
dIF/dt (typical values)
t
(ns)
rr
Q
(nC)
rr
400
350
300
250
200
150
100
50
1200
1000
800
600
400
200
0
VR=600V
Tj=125°C
VR=600V
Tj=125°C
IF=2 x IF(AV)
IF=2 x IF(AV)
IF=IF(AV)
IF=IF(AV)
IF=0.5 x IF(AV)
IF=0.5 x IF(AV)
dI /dt(A/µs)
F
dI /dt(A/µs)
F
0
0
50
100
150
200
250
300
350
400
450
500
0
50
100
150
200
250
300
350
400
450
500
Figure 7.
Softness factor versus
dIF/dt (typical values)
Figure 8.
Relative variations of dynamic
parameters versus junction
temperature
S factor
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
3.5
3.0
2.5
2.0
1.5
1.0
0.5
IF=IF(AV)
VR=600V
Reference: Tj=125°C
IF ≤ 2xIF(AV)
VR=600V
Tj=125°C
S factor
trr
IRM
QRR
T (°C)
j
dI /dt(A/µs)
F
0.00
25
50
75
100
125
0
50
100
150
200
250
300
350
400
450
500
Figure 9.
Transient peak forward voltage
versus dIF/dt (typical values)
Figure 10. Forward recovery time versus dIF/dt
(typical values)
t (ns)
fr
V
(V)
FP
700
600
500
400
300
200
100
0
60
55
50
45
40
35
30
25
20
15
10
5
IF=IF(AV)
VFR=1.5 x VF max.
Tj=125°C
IF=IF(AV)
Tj=125°C
dI /dt(A/µs)
F
dI /dt(A/µs)
F
0
0
25
50
75
100 125
150 175 200
225 250
275 300
0
100
200
300
400
500
4/8
STTH312
Characteristics
Figure 11. Junction capacitance versus
reverse voltage applied (typical
values)
Figure 12. Thermal resistance junction to
ambient versus copper surface
under tab (printed circuit board
FR4, ecu = 35 µm)
R (°C/W)
th(j-a)
C(pF)
100
90
80
70
60
50
40
30
20
10
0
100
F=1MHz
VOSC=30mVRMS
Tj=25°C
10
SCU(cm²)
V (V)
R
1
0
5
10
15
20
25
30
35
40
1
10
100
1000
5/8
Package mechanical data
STTH312
2
Package mechanical data
Epoxy meets UL94, V0
Cooling method: by conduction (C)
Table 5.
DPAK dimensions
DIMENSIONS
Millimeters Inches
REF.
Min.
Max
Min.
Max.
E
A
A
A1
A2
B
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.35
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
6.60
4.60
10.10
0.086
0.035
0.001
0.025
0.204
0.017
0.018
0.236
0.251
0.173
0.368
0.094
0.043
0.009
0.035
0.212
0.023
0.023
0.244
0.259
0.181
0.397
B2
C2
L2
D
B2
C
R
H
L4
C2
D
A1
R
B
G
C
E
G
A2
0.60 MIN.
H
L2
L4
V2
0.80 typ.
0.031 typ.
V2
0.60
0°
1.00
8°
0.023
0°
0.039
8°
Figure 13. DPAK footprint (dimensions in mm)
1.6
6.7
3
3
2.3
2.3
6.7
1.6
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com.
6/8
STTH312
Ordering information
Base qty Delivery mode
3
Ordering information
Part Number
Marking
Package
Weight
STTH312B
STTH312B
STTH312B
DPAK
DPAK
0.30 g
0.30 g
75
Tube
STTH312B-TR
2500
Tape & reel
4
Revision history
Date
Revision
Description of Changes
02-Mar-2006
1
First issue.
7/8
STTH312
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8/8
STTH312B CAD模型
引脚图
封装焊盘图
STTH312B 替代型号
| 型号 | 制造商 | 描述 | 替代类型 | 文档 |
| STTH312B-TR | STMICROELECTRONICS | Ultrafast recovery - 1200 V diode | 完全替代 |
|
| STTA312B | STMICROELECTRONICS | TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE | 类似代替 |
|
STTH312B 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| STTH312B-TR | STMICROELECTRONICS | Ultrafast recovery - 1200 V diode | 获取价格 |
|
| STTH31AC06S | STMICROELECTRONICS | Turbo 2 ultrasoft high voltage rectifier | 获取价格 |
|
| STTH31AC06SPF | STMICROELECTRONICS | Turbo 2 ultrasoft high voltage rectifier | 获取价格 |
|
| STTH31AC06SWL | STMICROELECTRONICS | Turbo 2 ultrasoft high voltage rectifier | 获取价格 |
|
| STTH3L06 | STMICROELECTRONICS | TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER | 获取价格 |
|
| STTH3L06-RL | STMICROELECTRONICS | 暂无描述 | 获取价格 |
|
| STTH3L06-Y | STMICROELECTRONICS | 汽车级600 V、3A低压降超高速二极管 | 获取价格 |
|
| STTH3L06B | STMICROELECTRONICS | TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER | 获取价格 |
|
| STTH3L06B-TR | STMICROELECTRONICS | TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER | 获取价格 |
|
| STTH3L06RL | STMICROELECTRONICS | TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER | 获取价格 |
|
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