STTH3R06UFY [STMICROELECTRONICS]

Automotive Turbo 2 ultrafast high voltage rectifier;
STTH3R06UFY
型号: STTH3R06UFY
厂家: ST    ST
描述:

Automotive Turbo 2 ultrafast high voltage rectifier

快速恢复能力电源 超快恢复二极管 高压超快恢复二极管 快速恢复二极管 超快速恢复能力电源 高压超快恢复电源 光电二极管
文件: 总9页 (文件大小:237K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
STTH3R06-Y  
Automotive Turbo 2 ultrafast high voltage rectifier  
Datasheet  
-
production data  
Description  
The STTH3R06-Y is an ultrafast recovery power  
rectifier dedicated to energy recovery in  
automotive application housed in SMBflat to  
improve space saving.  
K
A
A
It is especially designed for clamping function in  
energy recovery block.  
K
The compromise between forward voltage drop  
and recovery time offers optimized performances.  
SMBflat  
Table 1. Device summary  
Symbol  
Value  
IF(AV)  
VRRM  
3 A  
Features  
600 V  
175 °C  
1.1 V  
35 ns  
Ultrafast recovery  
Tj (max)  
VF (typ)  
Trr (typ)  
Low switching losses  
High surge capability  
Low leakage current  
High junction temperature  
AEC-Q101 qualified  
ECOPACK®2 compliant component  
VRRM guaranteed from -40 to +175 °C  
August 2014  
DocID026720 Rev 1  
1/9  
This is information on a product in full production.  
www.st.com  
Characteristics  
STTH3R06-Y  
1
Characteristics  
Table 2. Absolute ratings (limiting values at Tj = 25 °C, unless otherwise specified)  
Symbol  
Parameter  
Value  
Unit  
Tj = -40 to +175 °C  
Average forward current, square waveform TL = 90 °C δ = 0.5  
VRRM Repetitive peak reverse voltage  
600  
3
V
A
IF(AV)  
IFSM  
Tstg  
Forward Surge current  
tp = 10 ms  
30  
A
Storage temperature range  
-65 to + 175  
-40 to + 175  
°C  
°C  
Tj(1)  
Operating temperature range  
1
dPtot  
dTj  
<
1.  
condition to avoid thermal runaway for a diode on its own heatsink  
Rth(j-a)  
Table 3. Thermal resistance  
Parameter  
Symbol  
Value  
Unit  
Rth(j-l)  
Junction to lead  
16  
°C/W  
Table 4. Static electrical characteristics  
Symbol  
Parameter  
Tests conditions  
Min.  
Typ.  
Max.  
Unit  
Tj = 25 °C  
-
-
-
-
3
(1)  
IR  
Reverse leakage current  
Forward voltage drop  
VR = 600 V  
IF = 3A  
µA  
Tj = 150 °C  
Tj = 25 °C  
15  
100  
1.9  
1.4  
(2)  
VF  
V
Tj = 150 °C  
1.1  
1. Pulse test: tp = 5 ms, δ < 2%  
2. Pulse test: tp = 380 µs, δ < 2%  
To evaluate the conduction losses use the following equation:  
2
P = 1.1 x IF(AV) + 0.1 x IF (RMS)  
Table 5. Dynamic electrical characteristics  
Symbol  
Parameter  
Tests conditions  
Min. Typ. Max. Unit  
IF = 1 A, dIF/dt = -50 A/µs  
VR = 30 V  
trr  
tfr  
Reverse recovery time Tj = 25 °C  
Forward recovery time  
-
-
-
35  
50  
130  
5
ns  
V
IF = 3 A, dIF/dt = 100 A/µs,  
VFR = 2.0 V  
Tj = 25 °C  
Forward recovery  
VFP  
voltage  
2/9  
DocID026720 Rev 1  
STTH3R06-Y  
Characteristics  
Figure 1. Average forward power dissipation Figure 2. Forward voltage drop versus forward  
versus average forward current  
current (typical values)  
P
(W)  
F(AV)  
I (A)  
F
10.00  
1.00  
0.10  
0.01  
6
5
4
3
2
1
0
δ = 0.1 δ = 0.2  
δ = 0.05  
δ = 0.5  
δ = 1  
Tj = 150°C  
Tj = 25°C  
T
V
(V)  
F
I (A)  
F(AV)  
tp  
=tp/T  
δ
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
Figure 3. Forward voltage drop versus forward  
current (maximum values)  
Figure 4. Relative variation of thermal  
impedance junction to lead versus pulse  
duration  
I
(A)  
Z
/R  
th(j-l) th(j-l)  
F
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
10.00  
1.00  
0.10  
0.01  
Tj = 150°C  
Tj = 25°C  
Single pulse  
t
(s)  
p
V
(V)  
F
1.E-04  
1.E-03  
1.E-02  
1.E-01  
1.E+00  
1.E+01  
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
Figure 5. Peak reverse recovery current versus Figure 6. Reverse recovery time versus dIF/dt  
dIF/dt (typical values) (typical values)  
I
(A)  
RM  
t
(ns)  
RR  
13  
12  
11  
10  
9
160  
150  
140  
130  
120  
110  
100  
90  
V
T
= 400 V  
= 125 °C  
R
V
T
= 400 V  
= 125 °C  
R
j
j
I
= 2 x I (av)  
F
F
I
= 2 x I (av)  
F
F
I
= I (av)  
F
F
I
= I (av)  
F
F
8
I
= 0.5 x I (av)  
F
I
= 0.5 x I (av)  
F
F
F
7
80  
6
I
= 0.25 x I (av)  
F
70  
F
5
60  
50  
4
40  
3
30  
2
20  
dI /dt(A/µs)  
F
1
10  
dI /dt(A/µs)  
F
0
0
0
50  
100  
150  
200  
250  
300  
350  
400  
450  
500  
0
50  
100  
150  
200  
250  
300  
350  
400  
450  
500  
DocID026720 Rev 1  
3/9  
9
Characteristics  
STTH3R06-Y  
Figure 7. Reverse recovery charges versus  
dIF/dt (typical values)  
Figure 8. Reverse recovery softness factor  
versus dIF/dt (typical values)  
S
Q
(nC)  
factor  
RR  
450  
400  
350  
300  
250  
200  
150  
100  
50  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
I
V
T
= I (av)  
F
= 400 V  
V
= 400 V  
= 125 °C  
F
R
I
= 2 x I (av)  
F
F
T
R
j
= 125 °C  
j
I
= I (av)  
F
F
I
= 0.5 x I (av)  
F
F
dI /dt(A/µs)  
F
dI /dt(A/µs)  
F
0
0
50  
100  
150  
200  
250  
300  
350  
400  
450  
500  
0
50  
100  
150  
200  
250  
300  
350  
400  
450  
500  
Figure 9. Relative variation of dynamic  
parameters versus junction temperature  
Figure 10. Transient peak forward voltage  
versus dIF/dt (typical values)  
V
(V)  
FP  
1.0  
10  
8
I
= I  
F(AV)  
= 125 °C  
F
S
factor  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
T
j
I
RM  
Q
RR  
6
4
2
I
V
= I (av)  
F
= 400 V  
F
R
T (°C)  
j
dI /dt(A/µs)  
F
Reference: T = 125 °C  
j
0
25  
50  
75  
100  
125  
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
Figure 11. Forward recovery time versus dIF/dt Figure 12. Junction capacitance versus reverse  
(typical values)  
voltage applied (typical values)  
t
(ns)  
C(pF)  
FR  
100  
10  
1
160  
140  
120  
100  
80  
F = 1 MHz  
V
I
V
T
= I  
F(AV)  
F
= 30 mV  
RMS  
= 2.0 V  
osc  
= 25 °C  
FR  
= 125 °C  
T
j
j
60  
40  
20  
dI /dt(A/µs)  
F
V
(V)  
R
0
1
10  
100  
1000  
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
4/9  
DocID026720 Rev 1  
STTH3R06-Y  
Characteristics  
Figure 13. Thermal resistance junction to ambient versus copper surface under each lead  
(typical values)  
R
(°C/W)  
th(j-a)  
200  
150  
100  
50  
epoxy printed circuit board FR4, copper thickness: 35 µm  
SMBflat  
S
(cm²)  
cu  
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
DocID026720 Rev 1  
5/9  
9
Package information  
STTH3R06-Y  
2
Package information  
Epoxy meets UL94,V0  
Lead-free package  
Band indicates cathode  
In order to meet environmental requirements, ST offers these devices in different grades of  
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®  
specifications, grade definitions and product status are available at: www.st.com.  
ECOPACK® is an ST trademark.  
Figure 14. SMBflat dimensions definitions  
A
c
D
L 2x  
L2 2x  
E
E1  
L
L1 2x  
b
6/9  
DocID026720 Rev 1  
STTH3R06-Y  
Package information  
Table 6. SMBflat dimension values  
Dimensions  
Ref.  
Millimeters  
Inches  
Min.  
Typ.  
Max.  
Min.  
Typ.  
Max.  
A
b
0.90  
1.95  
0.15  
3.30  
5.10  
4.05  
0.75  
1.10  
2.20  
0.40  
3.95  
5.60  
4.60  
1.50  
0.035  
0.077  
0.006  
0.130  
0.200  
0.159  
0.029  
0.043  
0.087  
0.016  
0.155  
0.220  
0.181  
0.059  
c
D
E
E1  
L
L1  
L2  
0.40  
0.60  
0.016  
0.024  
Figure 15. SMBflat footprint, dimensions in mm (inches)  
5.84  
(0.230)  
2.07  
(0.082)  
1.20  
(0.047)  
3.44  
(0.136)  
1.20  
(0.047)  
DocID026720 Rev 1  
7/9  
9
Ordering information  
STTH3R06-Y  
3
Ordering information  
Table 7. Ordering information  
Order codes  
Marking  
Package  
Weight  
Base qty  
Delivery mode  
STTH3R06UFY  
F3R6Y  
SMBflat  
50 mg  
5000  
Tape and reel  
4
Revision history  
Table 8. Document revision history  
Revision Changes  
Date  
04-Aug-2014  
1
Initial release.  
8/9  
DocID026720 Rev 1  
STTH3R06-Y  
IMPORTANT NOTICE – PLEASE READ CAREFULLY  
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and  
improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on  
ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order  
acknowledgement.  
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or  
the design of Purchasers’ products.  
No license, express or implied, to any intellectual property right is granted by ST herein.  
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.  
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.  
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.  
© 2014 STMicroelectronics – All rights reserved  
DocID026720 Rev 1  
9/9  
9

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