STV240N75F3 [STMICROELECTRONICS]
N-channel 75 V, 2.3 mΩ, 240 A PowerSO-10 STripFET™ III Power MOSFET; N沟道75 V， 2.3毫欧， 240 PowerSO - 10的STripFET ™III功率MOSFET
| 型号： | STV240N75F3 |
| 厂家： | 
ST |
| 描述： | N-channel 75 V, 2.3 mΩ, 240 A PowerSO-10 STripFET™ III Power MOSFET |
| 文件： | 总15页 (文件大小：999K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STV240N75F3
N-channel 75 V, 2.3 mΩ, 240 A PowerSO-10
STripFET™ III Power MOSFET
Features
RDS(on)
max
Type
VDSS
ID
STV240N75F3
75 V
< 2.6 mΩ
240 A
10
1
■ Conduction losses reduced
PowerSO-10
■ Low profile, very low parasitic inductance
Application
■ Switching applications
Figure 1.
Internal schematic diagram and
connection diagram (top view)
Description
This STripFET™ III Power MOSFET technology
is among the latest improvements, which have
been especially tailored to minimize on-state
resistance providing superior switching
performances.
Table 1.
Device summary
Order code
STV240N75F3
Marking
Package
PowerSO-10
Packaging
240N75F3
Tape and reel
January 2010
Doc ID 14595 Rev 2
1/15
www.st.com
15
Contents
STV240N75F3
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5.1
Tape and reel for PowerSO-10 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2/15
Doc ID 14595 Rev 2
STV240N75F3
Electrical ratings
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
75
Unit
V
VDS
VGS
ID
Drain-source voltage (VGS = 0)
Gate-source voltage
20
V
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
240
170
960
A
ID
A
(1)
A
IDM
(2)
Total dissipation at TC = 25 °C
Derating factor
300
2.0
W
W/°C
mJ
PTOT
(3)
Single pulse avalanche energy
Storage temperature
600
EAS
Tstg
Tj
°C
-55 to 175
Operating junction temperature
°C
1. Pulse width limited by safe operating area
2. This value is rated according to Rthj-c
3. Starting Tj = 25 °C, ID = 60 A, VDD = 15 V
Table 3.
Symbol
Thermal data
Parameter
Value
Unit
Rthj-case Thermal resistance junction-case max
0.5
35
°C/W
°C/W
(1)
Rthj-pcb
Thermal resistance junction-pcb max
1. When mounted on 1 inch² FR-4 2 oz Cu.
Doc ID 14595 Rev 2
3/15
Electrical characteristics
STV240N75F3
2
Electrical characteristics
(T
=25 °C unless otherwise specified)
CASE
Table 4.
Symbol
On /off states
Parameter
Test conditions
ID = 1 mA, VGS= 0
Min.
Typ.
Max. Unit
Drain-source
breakdown voltage
V(BR)DSS
75
V
VDS = Max rating,
10
µA
µA
Zero gate voltage
drain current (VGS = 0)
IDSS
VDS = Max rating, TC = 125 °C
100
Gate body leakage
current (VDS = 0)
IGSS
VDS
=
20 V
200 nA
VGS(th)
RDS(on)
Gate threshold voltage VDS= VGS, ID = 250 µA
2
4
V
Static drain-source on
VGS= 10 V, ID= 120 A
resistance
2.3
2.6
mΩ
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min.
Typ.
Max. Unit
Input capacitance
Ciss
Coss
Crss
6800
1100
50
pF
Output capacitance
VDS = 25 V, f = 1 MHz, VGS =0
-
-
-
pF
pF
Reverse transfer
capacitance
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD= 37.5 V, ID= 120 A,
VGS= 10 V
85
30
26
nC
nC
nC
-
(see Figure 14)
4/15
Doc ID 14595 Rev 2
STV240N75F3
Electrical characteristics
Min. Typ. Max Unit
Table 6.
Switching times
Parameter
Symbol
Test conditions
VDD = 37.5 V, ID = 60 A
RG= 4.7 Ω, VGS= 10 V,
(see Figure 13)
td(on)
tr
Turn-on delay time
Rise time
25
70
ns
ns
-
-
-
-
VDD = 37.5 V, ID = 60 A
RG= 4.7 Ω, VGS= 10 V,
(see Figure 13)
td(off)
tf
Turn-off delay time
Fall time
100
15
ns
ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
Source-drain current
240
960
A
A
-
-
(1)
ISD
Source-drain current (pulsed)
(2)
VSD
Forward on voltage
ISD = 120 A, VGS = 0
1.5
V
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 120 A, di/dt = 100 A/µs
VDD = 20 V, Tj = 150 °C
(see Figure 18)
80
180
4.5
ns
nC
A
Qrr
-
IRRM
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Doc ID 14595 Rev 2
5/15
Electrical characteristics
STV240N75F3
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Thermal impedance
AM05544v1
Zth_PowerSO-10
I
D
(A)
K
δ=0.5
0.2
0.1
1000
10-1
10-2
0.05
100
10
0.02
100µs
0.01
1ms
10ms
Tj=175°C
Tc=25°C
1
Single pulse
Single
pulse
10-3
10-5
0.1
10-2
10-4
10-1
10-3
10
V
DS(V)
p(s)
t
0.1
1
Figure 4.
Output characteristics
Figure 5.
Transfer characteristics
AM05545v1
(6ꢃꢂꢂꢁꢁ
)$
ꢄ!ꢅ
ID(A)
VGS=10V
350
6$3 ꢊ ꢁ6
ꢃꢂꢂ
ꢉꢁꢂ
ꢉꢂꢂ
ꢇꢁꢂ
ꢇꢂꢂ
6V
300
250
200
150
ꢀ ꢁꢂ
ꢀ ꢂꢂ
100
5V
50
0
ꢁꢂ
ꢂ
ꢂ
ꢇ
3
VDS(V)
ꢆ
6'3ꢄ6ꢅ
0
1
2
ꢃ
ꢈ
Figure 6.
Normalized BV
vs temperature Figure 7.
Static drain-source on resistance
DSS
AM05546v1
R
DS(on)
(mΩ)
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
0
100
150
50
200
ID(A)
6/15
Doc ID 14595 Rev 2
STV240N75F3
Electrical characteristics
Figure 8.
Gate charge vs gate-source voltage Figure 9.
Capacitance variations
Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs
vs temperature temperature
(6ꢃꢂꢀ ꢂꢂ
6'3ꢄ Hꢅ
ꢄNORMꢅ
ꢀ ꢋꢇ
ꢀ ꢋꢂ
ꢂꢋꢆ
)$ꢊꢇꢁꢂ!
ꢂꢋꢈ
ꢂꢋꢃ
ꢌꢍꢁ
ꢌꢇꢁ
ꢇꢁ
ꢍꢁ
4*ꢄ #ꢅ
ꢀ ꢇꢁ
Figure 12. Source-drain diode forward
characteristics
(6ꢃꢂꢀ ꢇꢂ
63$
ꢄ6ꢅ
4*ꢊꢌꢁꢂ #
ꢀ ꢋꢂ
ꢂꢋꢎ
ꢂꢋꢆ
4*ꢊꢇꢁ #
ꢂꢋꢍ
ꢂꢋꢈ
4*ꢊꢀ ꢍꢁ #
ꢂꢋꢁ
ꢂꢋꢃ
ꢂ
ꢇꢂ
ꢃꢂ
ꢈꢂ
ꢆꢂ ꢀ ꢂꢂ
)3$ꢄ!ꢅ
Doc ID 14595 Rev 2
7/15
Test circuits
STV240N75F3
3
Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
2200
3.3
µF
RL
µF
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
D.U.T.
VD
RG
VGS
2200
µF
D.U.T.
VG
2.7kΩ
47kΩ
PW
1kΩ
PW
AM01468v1
AM01469v1
Figure 15. Test circuit for inductive load
switching and diode recovery times
Figure 16. Unclamped inductive load test
circuit
L
A
A
A
B
D
FAST
DIODE
L=100µH
VD
G
2200
µF
D.U.T.
B
3.3
µF
VDD
S
3.3
µF
1000
µF
B
VDD
25
Ω
ID
D
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 17. Unclamped inductive waveform
Figure 18. Switching time waveform
ton
toff
tdoff
V(BR)DSS
tr
tf
tdon
VD
90%
10%
90%
IDM
10%
VDS
ID
0
0
VDD
VDD
90%
VGS
10%
AM01472v1
AM01473v1
8/15
Doc ID 14595 Rev 2
STV240N75F3
Test circuits
Figure 19. Gate charge test waveform
Figure 20. Diode recovery times waveform
SC15260
SC15250
Doc ID 14595 Rev 2
9/15
Package mechanical data
STV240N75F3
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
10/15
Doc ID 14595 Rev 2
STV240N75F3
Package mechanical data
PowerSO-10 MECHANICAL DATA
mm
inch
DIM.
MIN.
3.35
0.00
0.40
0.35
9.40
7.40
TYP.
MAX.
3.65
0.10
0.60
0.55
9.60
7.60
MIN.
0.132
0.000
0.016
0.013
0.370
0.291
TYP.
MAX.
0.144
0.004
0.024
0.022
0.378
0.300
A
A1
B
C
D
D1
e
1.27
0.050
E
9.30
7.20
7.20
6.10
5.90
1.25
9.50
7.40
7.60
6.35
6.10
1.35
0.366
0.283
0.283
0.240
0.232
0.049
0.374
0.291
0.300
0.250
0.240
0.053
E1
E2
E3
E4
F
h
0.50
1.70
0.002
0.067
H
13.80
1.20
14.40
1.80
0.543
0.047
0.567
0.071
L
q
α
0o
8o
B
0.10
A
B
10
6
H
E
E3 E1
E2
E4
1
5
SEATING
PLANE
DETAIL "A"
e
B
A
C
M
0.25
Q
D
=
=
=
=
h
D1
SEATING
PLANE
A
F
A1
L
A1
DETAIL "A"
α
0068039-C
Doc ID 14595 Rev 2
11/15
Packaging information
STV240N75F3
5
Packaging information
5.1
Tape and reel for PowerSO-10
Table 8.
Ref.
Carrier tape dimensions
mm
Min.
Typ.
Max.
A0
B0
K0
F
14.9
9.9
15.0
10.0
4.25
11.5
1.75
24.0
2.0
15.1
10.1
4.35
11.6
1.85
24.3
2.1
4.15
11.4
1.65
23.7
1.9
E
W
P2
P0
P1
T
3.9
4.0
4.1
23.9
0.025
1.50
24.0
0.30
1.55
24.1
0.35
1.60
D(Ø)
Note:
10 sprocket hole pitch cumulative tolerance ±0.2 mm.
(a)
Figure 21. Carrier tape drawing
!-ꢂꢈꢂꢉꢍVꢀ
12/15
Doc ID 14595 Rev 2
STV240N75F3
Packaging information
Table 9.
Ref.
Reel dimensions
mm
Min.
Typ.
Max.
A
B
C
D
N
G
T
330
1.5
12.8
20.2
60
13
13.2
24.4
30.4
Note:
10 sprocket hole pitch cumulative tolerance ±0.2 mm.
(b)
Figure 22. Reel drawing
4
ꢃꢂMM MINꢋ
!CCESS HOLE
! SLO LOCA ION
"
$
#
.
!
' MEASURED
! HUB
4APE SLO
)N CORE FOR
&ULL RADIUS
4APE S AR
ꢇꢋꢁMM MINꢋWID H
!-ꢂꢈꢂꢉꢆVꢀ
Table 10. Base and bulk quantities
Base qty.
Bulk qty.
600
a. Drawing is not to scale.
b. Drawing is not to scale.
Doc ID 14595 Rev 2
13/15
Revision history
STV240N75F3
6
Revision history
Table 11. Document revision history
Date
Revision
Changes
02-Apr-2008
1
Initial release
– Document status promoted from preliminary data to datasheet.
21-Jan-2010
2
– Inserted new Section 5: Packaging information.
14/15
Doc ID 14595 Rev 2
STV240N75F3
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Doc ID 14595 Rev 2
15/15
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