STV9378F [STMICROELECTRONICS]
VERTICAL DEFLECTION BOOSTER; 垂直偏转助推器
| 型号： | STV9378F |
| 厂家： | 
ST |
| 描述： | VERTICAL DEFLECTION BOOSTER |
| 文件： | 总5页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STV9378F
VERTICAL DEFLECTION BOOSTER
ADVANCE DATA
.
.
.
.
.
.
POWER AMPLIFIER
THERMAL PROTECTION
OUTPUT CURRENT UP TO 2.0APP
FLYBACK VOLTAGE UP TO 90V (on Pin 5)
INTERNAL REFERENCE VOLTAGE
EXTERNAL FLYBACK SUPPLY
DESCRIPTION
Designed for monitors and high performance TVs,
the STV9378F vertical deflection booster can han-
dle flyback voltage up to 90V. More than this it is
possible to have a flyback voltage which is more
than the double of the supply (Pin 2). This allows to
decrease the power consumption or to decrease
the flyback time for a given supply voltage.
The STV9378F operates with supplies up to 42V
and provides up to 2App output current to drive the
yoke.
HEPTAWATT
(Plastic Package)
ORDER CODE : STV9378F
The STV9378Fisofferedin HEPTAWATTpackage.
PIN CONNECTIONS
7
6
5
4
3
2
1
Non-inverting Input and Reference Voltage
Output Stage Supply
Output
GND
Flyback Supply
Supply Voltage
Inverting Input
Tab connected to pin 4
1/5
July 1994
This is advance information on a new product now in development or undergoing evaluation. Detailsare subject to change without notice.
STV9378F
BLOCK DIAGRAM
OUTPUT
STAGE
SUPPLY
SUPPLY
VOLTAGE
FLYBACK
SUPPLY
2
6
3
REFERENCE
VOLTAGE
INVERTING INPUT
1
7
POWER
AMPLIFIER
5
OUTPUT
NON-INVERTING INPUT
THERMAL
PROTECTION
STV9378F
4
GROUND
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Supply Voltage (Pin 2) (see note 1)
Value
Unit
V
VS
V6
50
100
Flyback Peak Voltage (Pin 6) (see note 1)
Amplifier Input Voltage (Pins 1-7) (see note 1)
V
V1 , V7
IO
- 0.3, + VS
1.5
V
Maximum Output Peak Current (see notes 2 and 3)
Maximum Sink Current (t < 1ms)
A
I3
1.5
A
I3
Maximum Source Current (t < 1ms) (in the diode, see Block Diagram)
Voltage Difference between Flyback Supply and Supply Voltage
Operating Ambient Temperature
1.5
A
V3 - V2
Toper
Tstg
Tj
70
V
- 20, + 75
- 40, + 150
+150
oC
oC
oC
Storage Temperature
Junction Temperature
Notes : 1.
Versus GND.
2.
3.
The output current can reach 4A peak for t ≤ 10µs (up to 120Hz).
Provided SOAR is respected (see Figures 1 and 2).
THERMAL DATA
Symbol
Parameter
Junction-case Thermal Resistance
Temperature for Thermal Shutdown
Value
3
Unit
oC/W
oC
oC
oC
Rth (j-c)
Tt
Max.
150
10
Hysteresis on Tt
∆Tt
Tjr
Recommended Max. Junction Temperature
120
2/5
STV9378F
ELECTRICAL CHARACTERISTICS
(VS = 42V, TA = 25oC, unless otherwise specified)
Symbol
Parameter
Operating Supply Voltage Range
Operating Flyback Supply Voltage
Pin 2 Quiescent Current
Test Conditions Min. Typ. Max.
Unit
V
VS
V3M
I2
10
VS
42
90
20
30
1
V
I3 = 0, I5 = 0
I3 = 0, I5 = 0
10
10
mA
mA
A
I6
Pin 6 Quiescent Current
5
IO
Max. Peak Output Current
Amplifier Bias Current
I1
V1 = 1V
- 0.15 - 1
µ
A
V7
Internal Reference Voltage
2.2
2.3
2.4
V
∆V7
∆VS
Reference Voltage Drift versus VS
VS = 24 to 42V
2
4
mV/V
Kt
GV
Reference Voltage Drift versus Tj
Voltage Gain
100
150
ppm/oC
80
dB
V
V5L
Output Saturation Voltage to GND (Pin 4)
Output Saturation Voltage to Supply (Pin 6)
Diode Forward Voltage between Pins 5-6
Diode Forward Voltage between Pins 3-6
I5 = 1A
I5 = - 1A
I5 = 1A
I3 = 1A
1
1.5
2.1
2
V5H
1.6
1.5
1.5
2.1
V
VD5 - 6
VD3-6
V3-6
V
2
V
Voltage Drop between Pins 3-6 (2nd part of flyback) I3 = - 1A
2.9
V
APPLICATION CIRCUIT
+ VS
Flyback
Supply
2
6
3
REFERENCE
VOLTAGE
R5
1
7
POWER
AMPLIFIER
5
THERMAL
PROTECTION
10µF
STV9378F
4
R3
R2
R4
CL
R1
3/5
STV9378F
Figure 1 : Output Transistors SOA
Figure 2 : Secondary Breakdown Temperature
Derating Curve
(for secondary breakdown)
(ISB = secondary breakdown current)
ISB (%)
100
IC (A)
10
@ T
= 25°C
case
90
80
70
1
-1
-2
10
10
t = 1ms
t = 10ms
t = 100ms
V
(V)
CE
Tcase (°C)
60
2
1
10
10
25
50
75
100
125
4/5
STV9378F
PACKAGE MECHANICAL DATA : 7 PINS - PLASTIC HEPTAWAT
L
L1
L2
L5
L3
Dia.
L7
L6
Dimensions
Millimeters
Typ.
Inches
Typ.
Min.
Max.
4.8
1.37
2.8
1.35
0.55
08
Min.
Max.
0.189
0.054
0.110
0.053
0.022
0.031
0.035
0.105
0.205
0.307
0.409
0.409
A
C
D
D1
E
F
2.4
1.2
0.35
0.6
0.094
0.047
0.014
0.024
F1
G
0.9
2.41
4.91
7.49
2.54
5.08
7.62
2.67
5.21
7.8
10.4
10.4
0.095
0.193
0.295
0.100
0.200
0.300
G1
G2
H2
H3
L
L1
L2
L3
L5
L6
L7
M
10.05
0.396
16.97
14.92
21.54
22.62
0.668
0.587
0.848
0.891
2.6
15.1
6
3
15.8
6.6
0.102
0.594
0.236
0.118
0.622
0.260
2.8
5.08
0.110
0.200
M1
Dia.
3.65
3.85
0.144
0.152
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility
for the consequences of use of such information norfor any infringement of patents or other rights of third parties which may result
from itsuse. No licence is granted by implication or otherwise under anypatent or patent rights of SGS-THOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life
support devices or systems without express written approval of SGS-THOMSON Microelectronics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
Purchase of I2C Components of SGS-THOMSON Microelectronics, conveys a license under the Philips
I2C Patent. Rights to use these components in a I2C system, is granted provided that the system conforms to
the I2C Standard Specifications as defined by Philips.
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