STW18NB40 [STMICROELECTRONICS]
N-CHANNEL 400V - 0.19ohm - 18.4A TO-247/ISOWATT218 PowerMESH MOSFET; N沟道400V - 0.19ohm - 18.4A TO- 247 / ISOWATT218的PowerMESH MOSFET型号: | STW18NB40 |
厂家: | ST |
描述: | N-CHANNEL 400V - 0.19ohm - 18.4A TO-247/ISOWATT218 PowerMESH MOSFET |
文件: | 总7页 (文件大小:144K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
STW18NB40
STH18NB40FI
N-CHANNEL 400V - 0.19 Ω - 18.4 A TO-247/ISOWATT218
PowerMesh™ MOSFET
PRELIMINARY DATA
TYPE
V
DSS
R
I
D
DS(on)
STW18NB40
STH18NB40FI
400 V
400 V
< 0.26 Ω
< 0.26 Ω
18.4 A
12.4 A
■
■
■
■
■
TYPICAL R (on) = 0.19 Ω
DS
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
3
3
2
2
1
1
ISOWATT218
TO-247
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termi-
INTERNAL SCHEMATIC DIAGRAM
nation structure, gives the lowest R
per area,
DS(on)
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
■
■
■
HIGH CURRENT, HIGH SPEED SWITCHING
SWITH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STW18NB40
STH18NB40FI
V
Drain-source Voltage (V = 0)
400
400
±30
V
V
DS
GS
V
Drain-gate Voltage (R = 20 kΩ)
DGR
GS
V
GS
Gate- source Voltage
V
I
Drain Current (continuos) at T = 25°C
18.4
11.6
73.6
190
1.52
4.5
12.4
7.8
A
D
C
I
Drain Current (continuos) at T = 100°C
A
D
C
I
( )
Drain Current (pulsed)
73.6
80
A
DM
P
Total Dissipation at T = 25°C
W
TOT
C
Derating Factor
0.64
4.5
W/°C
V/ns
V
dv/dt (1)
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Storage Temperature
V
ISO
-
2000
T
stg
–65 to 150
150
°C
°C
T
Max. Operating Junction Temperature
j
(•)Pulse width limited by safe operating area
(1)I <18.4A, di/dt<200A/µ, V <V
,TJ<T
(BR)DSS JMAX
SD
DD
June 2002
1/7
STW18NB40/STH18NB40FI
THERMAL DATA
TO-247
ISOWATT218
Rthj-case
Rthj-amb
Rthc-sink
Thermal Resistance Junction-case Max
0.66
1.56
°C/W
°C/W
°C/W
°C
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
30
0.1
300
T
Maximum Lead Temperature For Soldering Purpose
l
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
Avalanche Current, Repetitive or Not-Repetitive
18.4
A
AR
(pulse width limited by T max)
j
E
AS
Single Pulse Avalanche Energy
450
mJ
(starting T = 25 °C, I = I , V = 50 V)
j
D
AR
DD
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Drain-source
Test Conditions
Min.
Typ.
Max.
Unit
V
I
D
= 250 µA, V = 0
400
V
(BR)DSS
GS
Breakdown Voltage
I
Zero Gate Voltage
V
V
V
= Max Rating
1
µA
µA
nA
DSS
DS
Drain Current (V = 0)
GS
= Max Rating, T = 125 °C
50
DS
GS
C
I
Gate-body Leakage
= ±30V
±100
GSS
Current (V = 0)
DS
ON (1)
Symbol
Parameter
Test Conditions
Min.
Typ.
4
Max.
5
Unit
V
V
GS(th)
V
V
= V , I = 250 µA
Gate Threshold Voltage
3
DS
GS
D
R
Static Drain-source On
Resistance
= 10V, I = 6.2 A
D
0.19
0.26
Ω
DS(on)
GS
I
On State Drain Current
V
V
> I
= 10V
x R
DS(on)max,
18.4
A
D(on)
DS
D(on)
GS
DYNAMIC
Symbol
Parameter
Test Conditions
x R
DS(on)max,
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
> I
9.3
S
D(on)
I
D
= 9.2 A
C
C
V = 25V, f = 1 MHz, V = 0
DS GS
Input Capacitance
Output Capacitance
2480
435
pF
pF
iss
oss
Reverse Transfer
Capacitance
C
rss
47
pF
2/7
STW18NB40/STH18NB40FI
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
Turn-on Delay Time
V
R
= 200 V, I = 9.2 A
27
ns
d(on)
DD
D
= 4.7Ω V = 10 V
G
GS
t
14
ns
r
Rise Time
(see test circuit, Figure 3)
Q
V
V
= 320V, I = 18.4 A,
= 10V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
60
16
84
nC
nC
nC
g
DD
D
GS
Q
gs
Q
28.3
gd
SWITCHING OFF
Symbol
Parameter
Off-voltage Rise Time
Fall Time
Test Conditions
Min.
Typ.
13
Max.
Unit
ns
t
V
R
= 320V, I = 18.4 A,
r(Voff)
DD
D
= 4.7Ω, V = 10V
G
GS
t
15
ns
f
(see test circuit, Figure 5)
t
Cross-over Time
27
ns
c
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
18.4
73.6
1.6
Unit
A
I
Source-drain Current
SD
I
(2)
(1)
Source-drain Current (pulsed)
Forward On Voltage
A
SDM
V
I
I
= 18.4 A, V = 0
V
SD
SD
GS
t
= 18.4 A, di/dt = 100A/µs,
= 100V, T = 150°C
j
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
480
5.5
23
ns
µC
A
rr
SD
V
DD
Q
rr
RRM
(see test circuit, Figure 5)
I
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3/7
STW18NB40/STH18NB40FI
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
4/7
STW18NB40/STH18NB40FI
TO-247 MECHANICAL DATA
mm.
inch
DIM.
MIN.
4.85
2.20
0.40
1
TYP
MAX.
5.15
2.60
0.80
1.40
MIN.
0.19
TYP.
MAX.
0.20
0.10
0.03
0.05
A
D
0.08
E
0.015
0.04
F
F1
F2
F3
F4
G
3
2
0.11
0.07
2
3
2.40
3.40
0.07
0.11
0.09
0.13
10.90
0.43
H
15.45
19.85
3.70
15.75
20.15
4.30
0.60
0.78
0.14
0.62
0.79
0.17
L
L1
L2
L3
L4
L5
M
18.50
0.72
14.20
2
14.80
3
0.56
0.07
0.14
0.58
0.11
34.60
5.50
1.36
0.21
5º
5º
V
60º
60º
V2
Dia
3.55
3.65
0.143
5/7
STW18NB40/STH18NB40FI
ISOWATT218 MECHANICAL DATA
mm
inch
DIM.
MIN.
5.35
3.30
2.90
1.88
0.75
1.05
1.50
1.90
10.80
15.80
TYP.
MAX.
5.65
3.80
3.10
2.08
0.95
1.25
1.70
2.10
11.20
16.20
MIN.
0.211
0.130
0.114
0.074
0.030
0.041
0.059
0.075
0.425
0.622
TYP.
MAX.
0.222
0.150
0.122
0.082
0.037
0.049
0.067
0.083
0.441
0.638
A
C
D
D1
E
F
F2
F3
G
H
L
9
0.354
L1
L2
L3
L4
L5
L6
N
20.80
19.10
22.80
40.50
4.85
21.20
19.90
23.60
42.50
5.25
0.819
0.752
0.898
1.594
0.191
0.797
0.083
0.835
0.783
0.929
1.673
0.207
0.817
0.091
20.25
2.1
20.75
2.3
R
4.6
0.181
DIA
3.5
3.7
0.138
0.146
- Weight : 4.9 g (typ.)
- Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm
- The side of the dissipator must be flat within 80 µm
P025C/A
6/7
STW18NB40/STH18NB40FI
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics
© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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© http://www.st.com
7/7
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